• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.4
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• pp.8-12
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• 2009

We propose BMPA(balanced multimedia packet allocation) scheme. This scheme considers the issue of optimal sub-carrier allocation in OFDMA multicast system. When RT(real time) packets and NRT(non-real time) packets arrive at the same time, BMPA scheme gives higher weight to RT packets than NRT packets and then, it allocates sub-carriers according to the total weight sum of packets in each user. This process acts as both packet scheduler and sub-carrier allocation. Therefore, each user receives multimedia packets with reliability. With simulation results, it shows that BMPA scheme ensures long-term system throughput and, in average RT packet delay, BMPA scheme greatly outperforms multi-user water-filling algorithm.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.139.2-139.2
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• 2016

Electrons and phonons in chalcogenide-based materials play are important factors in the performance of an optical data storage media and thermoelectric devices. However, the fundamental kinetics of carriers in chalcogenide materials remains controversial, and active debate continues over the mechanism responsible for carrier relaxation. In this study, we investigated ultrafast carrier dynamics in an multilayered $\{Sb(3{\AA})/Te(9{\AA})\}n$ thin film during the transition from the amorphous to the crystalline phase using optical pump terahertz probe spectroscopy (OPTP), which permits the relationship between structural phase transition and optical property transitions to be examined. Using THz-TDS, we demonstrated that optical conductance and carrier concentration change as a function of annealing temperature with a contact-free optical technique. Moreover, we observed that the topological surface state (TSS) affects the degree of enhancement of carrier lifetime, which is closely related to the degree of spin-orbit coupling (SOC). The combination of an optical technique and a proposed carrier relaxation mechanism provides a powerful tool for monitoring TSS and SOC. Consequently, the response of the amorphous phase is dominated by an electron-phonon coupling effect, while that of the crystalline structure is controlled by a Dirac surface state and SOC effects. These results are important for understanding the fundamental physics of phase change materials and for optimizing and designing materials with better performance in optoelectronic devices.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.16 no.3
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• pp.97-102
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• 2016

The UFMC(Universal Filtered Multi-Carrier) is one of multi-carrier transmission technique as a candidate of transmission method for the recent 5G communication system. The UFMC can be considered as the system which has both the advantages of OFDM(Orthogonal Frequency Division Multiplex) and the simplicity of FBMC(Filter Bank Multi-Carrier). CFO(Carrier Frequency Offset) causes the problem to lower the BER performance due to a mismatch between the sub-carriers in multi-carrier transmission scheme. The effect of CFO on UFMC is not greater than the OFDM. But it still degrades the system performance caused by interference between the sub-band. In this paper, we analyze the SNR degradation due to changes in the value of EsNo and CFO on UFMC system.

• Journal of electromagnetic engineering and science
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• v.12 no.3
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• pp.223-225
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• 2012

In this paper, we develop a symbol/frame time and carrier frequency synchronization scheme for multi-carrier signaling in wireless mobile channels. The proposed scheme achieves simultaneous time synchronization and carrier frequency offset estimation. Simulation results show that the frequency offset of multiple sub-carrier spacings can be estimated and that performance is improved with robustness regardless of the cyclic prefix length.

• Journal of IKEEE
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• v.27 no.4
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• pp.556-560
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• 2023

In this study, the impact of Nitrogen implantation process on deep-level defects and lifetime in 4H-SiC Epi surfaces was comparatively analyzed. Deep Level Transient Spectroscopy (DLTS) and Time Resolved Photoluminescence (TR-PL) were employed to measure deep-level defects and carrier lifetime. As-grown Schottky Barrier Diodes (SBDs) exhibited energy levels at 0.16 eV, 0.67 eV, and 1.54 eV, while for implantation SBD, defects at 0.15 eV were observed. This indicates a reduction in defects associated with energy levels Z_1/2 and EH_6/7, known as lifetime killers, as impurities from nitrogen implantation replace titanium and carbon vacancies.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.10
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• pp.130-138
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• 1996

The size of a device needs to scale down to increase its integrity and speed. As the size of the device is reduced, the hot-carrier degradation that severely effects on device reliabilty is concerned. In this paper, sub-micron buried-channel P-MOSFETs were fabircated, and the hot-carrier effects were invetigated. Also the hot-carrier effect in the buired-channel P-MOSFETs and the surface-channel P-MOSFETs were compared with simulation programs using SUPREM-4 and MINIMOS-4. This paper showed that the electric characteristics of sub-micron P-MOSFET are different from those of N-MOSFET. Also it showed that the punchthrough voltage ( $V_{pt}$ ) was abruptly drop after applying the stress and became almost 0V when the channel lengths were shorter than 0.6.mu.m. The lower punchthrough voltage causes the device to operte poorly by the deterioration of cut-off characteries in the switching mode. We can conclude that the buried channel P-MOSFET for CMOS circuits has a limit of the channel length to be around 0.6.mu.m.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.9
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• pp.55-59
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• 2013

A new method using RF Ids determined from measured S-parameters is proposed to extract the gate-voltage dependent effective carrier velocity of bulk MOSFETs in the saturation region without additional dc Ids measurement data suffering parasitic resistance effect that becomes larger with continuous down-scaling to sub-$0.1{\mu}m$. This method also allows us to extract the carrier velocity in the saturation region without the difficult extraction of bias-dependent parasitic gate-source capacitance and effective channel length. Using the RF technique, the electron velocity overshoot exceeding the bulk saturation velocity is observed in bulk N-MOSFETs with a polysilicon gate length of $0.065{\mu}m$.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.39C no.7
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• pp.552-558
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• 2014

In this paper, we propose a side-peak cancellation technique of composite binary offset carrier (CBOC) signals for e-navigation. First, we divide a CBOC sub-carrier into several sub-carrier pulses, and then, observe that CBOC autocorrelation is the sum of multiple sub-correlation functions. Finally, we propose a novel correlation function with no side-peak and a sharp main-peak by combining the sub-correlation functions to improve the positioning accuracy. From numerical results, we confirm that the proposed correlation function with a sharp main-peak provides a better positioning performance than the conventional correlation functions in terms of the tracking error standard deviation.

• Environmental Engineering Research
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• v.13 no.1
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• pp.19-27
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• 2008

Simultaneous removal of ternary gases of $NH_3$, $H_2S$ and toluene in a contaminated air stream was investigated over 180 days in a biofilter. A commercially available inorganic/polymeric composite chip with a large void volume (bed porosity > 0.80) was used as a microbial support. Multiple microorganisms including Nitrosomonas and Nitrobactor for nitrogen removal, Thiobacillus thioparus (ATCC 23645) for $H_2S$ removal and Pseudomonas aeruginosa (ATCC 15692), Pseudomonas putida (ATCC 17484) and Pseudomonas putida (ATCC 23973) for toluene removal were used simultaneously. The empty bed residence time (EBRT) ranged from 60 - 120 seconds and the inlet feed concentration was $0.0325\;g/m^3-0.0651\;g/m^3$ for $NH_3$, $0.0636\;g/m^3-0.141\;g/m^3$ for $H_2S$, and $0.0918\;g/m^3-0.383\;g/m^3$ for toluene, respectively. The observed removal efficiency was 2% - 98% for $NH_3$, 2% - 100% for $H^2S$, and 2% - 80% for toluene, respectively. Maximum elimination capacity was about $2.7\;g/m^3$/hr for $NH_3$, > $6.4\;g/m^3$/hr for $H_2S$ and $4.0\;g/m^3$/hr for toluene, respectively. The inorganic/polymeric composite carrier required 40 - 80 days of wetting time for biofilm formation due to the hydrophobic nature of the carrier. Once the surface of the carrier was completely wetted, the microbial activity became stable. During the long-term operation, pressure drop was negligible because the void volume of the carrier was two times higher than the conventional packing materials.

• Transactions of the Korean hydrogen and new energy society
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• v.27 no.4
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• pp.412-420
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• 2016

Effect of $H_2S$ on reactivity of oxygen carrier was measured and discussed using fluidized bed reactor and SDN70 oxygen carrier. We could get 100% of fuel conversion and $CO_2$ selectivity even though $H_2S$ containing simulated syngas was used as fuel for reduction. Absorbed sulfur was released during oxidation and $N_2$ purge step after oxidation as $SO_2$ form. We could get 100% of fuel conversion and $CO_2$ selectivity during cyclic reduction-oxidation tests up to 10th cycle. However, only 6~7% of sulfur can be removed during oxidation and $N_2$ purge step and 93~94% of sulfur was accumulated in the oxygen carrier. Therefore we could conclude that total removal of sulfur was not possible. $SO_2$ emission during oxidation decreased as the number of cycle increased. Therefore we could expect that the reactivity of oxygen carrier will be decreased with time.