• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.11a
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• pp.181-182
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• 2012

본 연구에서는 반도체 기술의 핵심으로 알려있는 플라즈마 표면 처리 공정을 이용하여 인위적으로 그래핀과 기능기 반응을 통한 도핑효과를 일으켜, 전계효과(Electric Field Effect)를 인가하였을 때 그래핀 내에서 발생하는 Electron & Hole carrier 들의 accumulation & Depletion 효과에 의한 Charge Density 변화를 Graphene Field Effect Transistors (GFETs) 소자의 전기적 특성 변화를 확인하였다. 특히, 그래핀 내 Conduction of electron을 높이기 위하여, $N_2+H_2$ 가스 조합을 플라즈마 방전가스로 사용하였으며, Optical Emission Spectroscopy (OES) 및 Langmuir-probe 측정을 통하여 합성가스의 ICP 방전 상태 및 효과를 예측하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.5
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• pp.273-277
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• 2018

This research introduces the sputtered IZO thin film transistor (TFT) with solution-processed $Al_2O_3$ diffusion layer. IZO is one of the most commonly used amorphous oxide semiconductor (AOS) TFT. However, most AOS TFTs have many defects that degrade performance. Especially oxygen vacancy in the active layer. In previous research, aluminum was used as a carrier suppressor by binding the oxygen vacancy and making a strong bond with oxygen atoms. In this paper, we use a solution-processed $Al_2O_3$ diffusion layer to fabricate stable IZO TFTs. A double-layer solution-processed $Al_2O_3$-sputtered IZO TFT showed better performance and stability, compared to normal sputtered IZO TFT.

• Korean Journal of Materials Research
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• v.17 no.9
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• pp.489-492
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• 2007

Temperature and injection current dependence of elctroluminescence(EL) spectral intensity of the $In_{0.27}Ga_{0.73}N/GaN$ multi-quantum-well(MQW) have been studied over a wide temperature and as a function of injection current level. EL peaks also show significant broadening into higher photon energy region with the increase of injection current. This is explained by the band-filling effect. When temperature is slightly increased to 300 from 15 K, the EL emission peak showed red-blue-red shift. It can be explained by the carrier localization by potential fluctuation of multiple quantum well and band-gap shrinkage as temperature increase. It is found that a temperature-dependent variation pattern of the EL efficiency under very low and high injection currents show a drastic difference. This unique EL efficiency variation pattern with temperature and current is explained field effects due to the driving forward bias in presence of internal(piezo and spontaneous polarization) fields.

• Korean Journal of Materials Research
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• v.13 no.10
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• pp.673-676
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• 2003

We have investigated $Al_{x}$ $Ga_{l-x}$ N/GaN epilayers (x = 0.08, 0.15) grown by metal organic vapor phase epitaxy on sapphire with photoluminescence(PL), and persistent photoconductivity(PPC) experiments. An anomalous S-shaped shift behavior of temperature dependencies of PL peak energy is observed for the x = 0.15 sample. In PPC measurement, showed that the dark current recovery time of $Al_{x}$$Ga_{l-x}$ N/GaN epilayers mainly depends on the Al content. These behaviors are usually attributed to the presence of carrier localization states. All these phenomena are explained based on the alloy compositional fluctuations in the $Al_{x}$ /$Ga_{l-x}$ N/ epilayers. The photocurrent quenching observed in PPC measurements for $Al_{x}$ $Ga_{l-x}$ N/ epilayers less than 0.2 $\mu\textrm{m}$ thickness indicates that the presence of metastable state in the bandgap of GaN layer, and that the excess holes in the valence band recombine with free electrons.

• Journal of Sensor Science and Technology
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• v.31 no.6
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• pp.383-388
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• 2022

Currently, photodetectors are being extensively studied and developed for next-generation applications, such as in autonomous vehicles and image sensors. In this regard, all-inorganic metal halide perovskite (CsPbX₃; X = Cl, Br, and I) nanocrystals (NCs) have emerged as promising building blocks for various applications owing to their high absorption coefficients, tunable bandgaps, high defect tolerances, and solution processability. These features, which are typically required for the development of advanced optoelectronics, can be engineered by modifying the chemical compositions and surface chemistry of the NCs. Herein, we briefly review various strategies adopted for the application of CsPbX₃ perovskite NCs in photodetectors and for improving device performance. First, modifications of the chemical compositions of CsPbX₃ NCs to tune their optical bandgaps and improve the charge-transport mechanism are discussed. Second, the application of surface chemistry to improve oxidation resistance and carrier mobility is described. In the future, perovskite NCs with prospective features, such as non-toxicity and high resistance to external stimuli, are expected to be developed for practical applications.

• Bulletin of the Korean Chemical Society
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• v.35 no.11
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• pp.3261-3266
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• 2014

A pellet of polycrystalline $CuGaO_2$ with a delafossite structure was prepared from $Ga_2O_3$ and CuO by high-temperature solid-state synthesis. The $CuGaO_2$ pellet was a p-type semiconductor for which the electrical conductivity, carrier density, carrier mobility and Seebeck coefficient were $5.34{\times}10^{-2}{\Omega}^{-1}cm^{-1}$, $3.5{\times}10^{20}cm^{-3}$, $9.5{\times}10^{-4}cm^2V^{-1}s^{-1}$ at room temperature, and $+360{\mu}V/K$, respectively. It also exhibited two optical transitions at about 2.7 and 3.6 eV. The photoelectrochemical properties of the $CuGaO_2$ pellet electrode were investigated in aqueous electrolyte solutions. The flat-band potential of this electrode, determined using a Mott-Schottky plot, was +0.18 V vs SCE at pH 4.8 and followed the Nernst equation with respect to pH. Under UV light illumination, a cathodic photocurrent developed, and molecular hydrogen simultaneously evolved on the surface of the electrode due to the direct reduction of water without deposition of any metal catalyst.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.33 no.7A
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• pp.768-775
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• 2008

In this paper, we consider downlink throughput performances of multiuser orthogonal frequency division multiplexing with reduced channel information feedback schemes. Specifically, two types of reduced feedback schemes, namely, 1-bit per sub-carrier and selective feedback scheme are considered and compared with each other in terms of average network throughput. Since the strict throughput comparison for given number of feedback bits per user is quite difficult, rather we compare their general behaviors in various system configurations with different system parameters, which can give us an insight into practical system design with those reduced feedback schemes.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.4 no.5
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• pp.691-708
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• 2010

An important issue of supporting multi-users with diverse quality-of-service (QoS) requirements over wireless networks is how to optimize the systematic scheduling by intelligently utilizing the available network resource while, at the same time, to meet each communication service QoS requirement. In this work, we study the problem of a variety of communication services over multi-media heterogeneous cognitive OFDM system. We first divide the communication services into two parts. Multimedia applications such as broadband voice transmission and real-time video streaming are very delay-sensitive (DS) and need guaranteed throughput. On the other side, services like file transmission and email service are relatively delay tolerant (DT) so varying-rate transmission is acceptable. Then, we formulate the scheduling as a convex optimization problem, and propose low complexity distributed solutions by jointly considering channel assignment, bit allocation, and power allocation. Unlike prior works that do not care computational complexity. Furthermore, we propose the FAASA (Fairness Assured Adaptive Sub-carrier Allocation) algorithm for both DS and DT users, which is a dynamic sub-carrier allocation algorithm in order to maximize throughput while taking into account fairness. We provide extensive simulation results which demonstrate the effectiveness of our proposed schemes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.97-100
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• 1992

The Degradation mechanism of the ZnO-varistor fabricated with the content of a 3-Composition seed grain is discussed using the method of Thermally Stimulated Current (TSC). The spectra of TSC is measured in the temperature range of -130～270$^{\circ}C$ with a various forming electric fields E$\sub$f/, temperature T$\sub$f/ time tf, and a various rising rate of temperature. It is observed that there are appeared the peaks of ${\alpha}$, ${\alpha}$$_2$, ${\beta}$ and ${\gamma}$from high temperature in a TSC spectrum. It seems that ${\alpha}$$_1$ peak is due to thermal depolarization of donor ions forming the space charge in the depletion layer, and ${\alpha}$$_2$peak is due to the detrapping of trapped electrons in deep trap level of intergranular layer, and ${\beta}$ peak is due to the thermal exciting of carrier existing in the donor level of grain itself, and ${\gamma}$ peak is due to the thermal exciting of trapped carrier in all shallow trap site randomly distributed in the inner of sample and/or a intrinsic impurity existing in it.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.3
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• pp.517-522
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• 2004

In this paper, we have analyzed the performance enhancement of Orthogonal Frequency Division Multiplexing/Quadrature Phase Shift Keying Modulation-Digital Microwave Radio(OFDM/QPSK-DMR) system using Band Limited-Pulse Shaping Filter(BL-PSF) over microwave channel environments. For performance enhancement, the one-tap adaptive equalizer is adopted in the OFDM/QPSK-DMR system and than both BER and signature curve performance are compared with those of single carrier DMR system. Computer simulations confirm that the OFDM/QPSK-DMR system using 16 sub-carrier increase the fade margin about 2 dB over microwave channel environments and that of performance using one-tap adaptive equalizer is highly increased the fade margin as the number of sub-carriers is larger.