• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.6
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• pp.603-609
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• 2022

Passivation quality is mainly governed by epitaxial growth of crystalline silicon wafer surface. Void-rich intrinsic a-Si:H interfacial layer could offer higher resistivity of the c-Si surface and hence a better device efficiency as well. To reduce the resistivity of the contact area, a modification of void-rich intrinsic layer of a-Si:H towards more ordered state with a higher density is adopted by adapting its thickness and reducing its series resistance significantly, but it slightly decreases passivation quality. Higher resistance is not dominated by asymmetric effects like different band offsets for electrons or holes. In this study, multilayer of intrinsic a-Si:H layers were used. The first one with a void-rich was a-Si:H(I₁) and the next one a-SiO_x:H(I₂) were used, where a-SiO_x:H(I₂) had relatively larger band gap of ~2.07 eV than that of a-Si:H (I₁). Using a-SiO_x:H as I₂ layer was expected to increase transparency, which could lead to an easy carrier transport. Also, higher implied voltage than the conventional structure was expected. This means that the a-SiO_x:H could be a promising material for a high-quality passivation of c-Si. In addition, the i-a-SiO_x:H microstructure can help the carrier transportation through tunneling and thermal emission.

• International Journal of Computer Science & Network Security
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• v.23 no.10
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• pp.1-10
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• 2023

This paper proposes a method to extend Inter-Carrier Interference (ICI) canceling Orthogonal Frequency Division Multiplexing (OFDM) receivers for 5G mobile systems to spatial multiplexing 2×2 MIMO (Multiple Input Multiple Output) systems to support high-speed ground transportation services by linear motor cars traveling at 500 km/h. In Japan, linear-motor high-speed ground transportation service is scheduled to begin in 2027. To expand the coverage area of base stations, 5G mobile systems in high-speed moving trains will have multiple base station antennas transmitting the same downlink (DL) signal, forming an expanded cell size along the train rails. 5G terminals in a fast-moving train can cause the forward and backward antenna signals to be Doppler-shifted in opposite directions, so the receiver in the train may have trouble estimating the exact channel transfer function (CTF) for demodulation. A receiver in such high-speed train sees the transmission channel which is composed of multiple Doppler-shifted propagation paths. Then, a loss of sub-carrier orthogonality due to Doppler-spread channels causes ICI. The ICI Canceller is realized by the following three steps. First, using the Demodulation Reference Symbol (DMRS) pilot signals, it analyzes three parameters such as attenuation, relative delay, and Doppler-shift of each multi-path component. Secondly, based on the sets of three parameters, Channel Transfer Function (CTF) of sender sub-carrier number n to receiver sub-carrier number l is generated. In case of n≠l, the CTF corresponds to ICI factor. Thirdly, since ICI factor is obtained, by applying ICI reverse operation by Multi-Tap Equalizer, ICI canceling can be realized. ICI canceling performance has been simulated assuming severe channel condition such as 500 km/h, 8 path reverse Doppler Shift for QPSK, 16QAM, 64QAM and 256QAM modulations. In particular, 2×2MIMO QPSK and 16QAM modulation schemes, BER (Bit Error Rate) improvement was observed when the number of taps in the multi-tap equalizer was set to 31 or more taps, at a moving speed of 500 km/h and in an 8-pass reverse doppler shift environment.

• Journal of the Korean Society of Radiology
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• v.16 no.2
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• pp.141-150
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• 2022

The initial co-transport and counter-transport permeate transport characteristics of calcium ion at epithelial cell membrane model in parathyroid which irradiated by high energy x-ray(linac 6 MV) was investigated. The epithelial cell membrane model used in this experiment was a polysulfonated copolymerized membrane of poly(PS-DVB: polystyrene-divinylbenzene). The difference of sorbed water in membrane, fixed carrier concentration(SO₃^2-), initial pH value, OH^- concentration were occurred at difference of Ca²⁺concentration and quantity of parathyroid hormone, respectively. The initial co-transport and counter-transport permeate flux of Cl^-, OH^-, Ca²⁺ on fixed carrier concentration(SO₃^2-) and initial pH value of irradiated membrane was found to be decreased than non-irradiated membrane. The initial co-transport and counter-transport permeate flux of Ca²⁺ on fixed carrier concentration (SO₃^2-), initial pH value, OH^- concentration in irradiated membrane were found to be decreased about 2.68 ~ 6.87 times, about 1.42 ~ 1.63 times, about 2.07 ~ 1.672 times than non-irradiated membrane, respectively. As a result, the quantity of parathyroid hormone was decreased at irradiated membrane than non-irradiated membrane. The decrease of parathyroid hormone was occurred at hypoparathyroidism and osteoporosis, parathyroiditis, and so on. As the parathyroid hormone in epithelial cell membrane model were abnormal, cell damages were appeared at cell.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.12
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• pp.53-58
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• 1991

Hot-carrier induced degradation has been studied for the BF$_2$ ion-implanted surface-channel LDD(P$^{+}$ polysilicon gate) PMOSFET in comparison to the buried-channel structure(N$^{+}$ polysilicon gate) PMOSFET. The conditions for maximum degradation better correlated to I$_{g}$ than I$_{sub}$ for both PMOSFET's. Due to the use of LDD structure on SC-PMOSFET, the substrate current for SC-PMOSFET was shown to be smaller than that of BC-PMOSFET. The gate current was smaller as well, due to the gate material work-function difference between p$^{+}$ and n$^{+}$ polysilicon gates. From the results, it was shown that the surface-channel LDD PMOSFET is more resistant to short channel effect than the buried-channel PMOSFET.

• Special Issue of the Society of Naval Architects of Korea
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• 2009.09a
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• pp.6-17
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• 2009

The present paper addresses development of a GTT NO96 membrane type 170K m3 LNG carrier targeted to operate in moderate ice infested seas including Baltic Sea, Sakhalin port of Sea of Okhotsk, Murmansk port of Barents Sea, etc. Critical design issues are covered in detail to meet the requirements coming from the missioned operation conditions comprising low design ambient temperature, harsh wave conditions, stringent environmental protection policies, etc.

• Journal of Communications and Networks
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• v.8 no.1
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• pp.38-48
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• 2006

A synchronous multicarrier (MC) code-division multiple access (CDMA) system using inverse fast Fourier transform (IFFT) and fast Fourier transform (FFT) for the downlink mobile communication system operating in a frequency selective Rayleigh fading channel is analyzed. Both carrier frequency offset and timing offset are considered in the analysis. Bit error rate performance of the system with both equal gain combining and maximum ratio combining are obtained. The performance is compared to that of the conventional system using correlation receiver. It is shown that when subcarrier number is large, the system using IFFT/FFT has nearly the same performance as the conventional one, while when the sub carrier number is small, the system using IFFT/FFT will suffer slightly worse performance in the presence of carrier frequency offset.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.2
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• pp.182-187
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• 1988

Hot carrier induced device degradation characteristics under DC bias stress have been investigated in n-MOSFETs with channel length of 1.2,1.8 um, and compared with those of LDD structure device with same channel length. Based on these results, the device lifetime in normal operating bias(Vgs=Vds=5V) is evaluated. The lifetimes of conventional and LDD n-MOSFET with channel length of 1.2 um are estimated about for 17 days and for 12 years, respectively. The degradation rate of LDD n-MOSFET under the same stress is the lowest at n-region implnatation dose of 2.5E15 cm-\ulcorner while the substrate current is the lowest at the dose of 1E13cm-\ulcorner Thses results show that the device degradation characteristics are basic measurement parameter to find optimum process conditions in LDD devices and evaluate a reliability of sub-micron device.

• Journal of the Korean Ceramic Society
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• v.40 no.5
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• pp.405-409
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• 2003

The effect of substitution of Gd ions for Ca ions in the B $i_{1.84}$P $b_{0.34}$S $r_{1.91}$(C $a_{1-x}$ G $d_{x}$)$_{2.03}$ C $u_{3.06}$ $O_{ 10+{\delta}}$/ (x=0.0~0.06) was investigated by measuring x-ray diffraction patterns, lattice constants, do resistivity and Hall effect. We found the solubility limit of Gd in the 110 K phase to be x < 0.015. Within the solubility limit, the c-axis seemed to decrease with increasing x. In the region of the 110 K single phase, the critical temperature $T_{c}$ gradually decreased with an increasing the Gd concentration x, corresponding to a small change of the carrier concentration.

• Korean Journal of Materials Research
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• v.31 no.8
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• pp.445-449
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• 2021

Zintl compound Mg₃Sb₂ is a promising candidate for efficient thermoelectric material due to its small band gap energy and characteristic electron-crystal phonon-glass behavior. Furthermore, this compound enables fine tuning of carrier concentration via chemical doping for optimizing thermoelectric performance. In this study, nominal compositions of Mg_3.8Sb_2-xTe_x (0 ≤ x ≤ 0.03) are synthesized through controlled melting and subsequent vacuum hot pressing method. X-ray diffraction (XRD) and scanning electron microscopy (SEM) are carried out to investigate phase development and surface morphology during the process. It should be noted that 16 at. % of excessive Mg must be added to the system to compensate for the loss of Mg during melting process. Herein, thermoelectric properties such as Seebeck coefficient, electrical conductivity, and thermal conductivity are evaluated from low to high temperature regimes. The results show that Te substitution at Sb sites effectively tunes the majority carriers from holes to electrons, resulting in a transition from p to n-type. At 873 K, a peak ZT value of 0.27 is found for the specimen Mg_3.8Sb_1.99Te_0.01, indicating an improved ZT value over the intrinsic value.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.6
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• pp.617-626
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• 2010

In this paper, we have proposed and experimentally performed a polarization and phase control method of an optical signal which has same wavelength with the optical carrier to improve phase characteristics of a continuous wave(CW) generated by the double sideband-suppressed carrier(DSB-SC) as one of the famous photomixing technique for making sub-millimeter and terahertz waves. A polarization and phase controlled optical signal has been coupled with the general DSB-SC on an optical coupler. The output of the optical coupler is then photomixed by a photomixer. From our analysis and measurement results, we have found that the amplitude of the generated sub-mm and terahertz CW signal is higher 1.5 dB and the phase noise is lower about 3 dB@10 kHz offset frequency than the general DSBSC. Consequently, since our proposed method has improved the amplitude and phase noise of CW signals in the sub-mm and terahertz bands, it can be helpful results to make low cost CW generator in sub-millimeter and subterahertz bands.