• 제목/요약/키워드: Sub-array

검색결과 421건 처리시간 0.024초

피보나치 원형군에서의 임베딩 (Embedding in Fibonacci Circulants)

  • 유명기;김용석
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 하계종합학술대회 논문집(3)
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    • pp.169-172
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    • 2002
  • In this paper, we consider the problem of embedding Fibonacci linear array, Fibonacci mesh, Fibonacci tree into Fibonacci circulants and between Fibonacci cubes and Fibonacci circulants. We show that the Fibonacci linear array of order n , Ln is a subgraph of the Fibonacci circulants of order n , En with En◎ Ln,n≥0 , the Fibonacci mesh of order (nt,n2), M(n,.nT)with S2n.1 f( M(n.れ)닌 M(n.1.n.1)), 52れ 늰( M(n.n.1)띤 M(H.n-1)) and the Fibonacci tree-lof order n, FT/sub n/ with ∑/sub n+3/⊇ FTn , n≥0, the Fibonacci tree-ll of order n , Tれ with ∑/sub n/⊇ Tn Fu퍼hermore, 낀e show that the Fibonacci cubes of order n , rn is subgraph of the Fibonacci circulants of order n , En and inversely rn can be embedded into En with expansion 1, dilation n -2 and congestion.

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선 배열에서 표적체의 방위 모호성과 분해능 향상을 위한 신호처리 기법 (Signal Processing for Improvement of Resolution and Direction Ambiguity of Source in Line Array)

  • 손윤준;천승용;김기만
    • 한국음향학회지
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    • 제22권6호
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    • pp.482-488
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    • 2003
  • 선 배열을 이용한 빔 형성시 특정 지향 방향을 기준으로 반대 방향에 동일한 이득을 갖게 되어 수신단에서는 좌/우측 방위구분에 있어 모호성을 갖는다 이에 본 논문에서는 선 배열에 카디오이드 빔을 적용하여 좌/우측 방위 구분의 모호성을 해결하고, 아울러 어레이 합성 처리 기법을 사용하여 음원에 대한 공간적 데이터 수를 증가시키고 음원으로부터 얻은 정보를 코히어런트 합성 처리함으로써 배열 센서가 갖는 공간적인 분해능의 한계를 극복하였다. 시뮬레이션 결과에서는 좌/우측 방위 구분에 대한 성능을 어레이 합성 횟수에 따라 나타내었다.

Characterization analysis of Rongchang pig population based on the Zhongxin-1 Porcine Breeding Array PLUS

  • Dong Leng;Liangpeng Ge;Jing Sun
    • Animal Bioscience
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    • 제36권10호
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    • pp.1508-1516
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    • 2023
  • Objective: To carry out a comprehensive production planning of the existing Rongchang pig population from both environmental and genetic aspects, and to establish a closed population with stable genetic diversity and strict pathogen control, it is necessary to fully understand the genetic background of the population. Methods: We genotyped 54 specific pathogen free (SPF) Rongchang pigs using the Zhongxin-1 Porcine Breeding Array PLUS, calculated their genetic diversity parameters and constructed their families. In addition, we also counted the runs of homozygosity (ROH) of each individual and calculated the value of inbreeding coefficient based on ROH for each individual. Results: Firstly, the results of genetic diversity analysis showed that the effective population size (Ne) of this population was 3.2, proportion of polymorphic markers (PN) was 0.515, desired heterozygosity (He) and observed heterozygosity (Ho) were 0.315 and 0.335. Ho was higher than He, indicating that the heterozygosity of all the selected loci was high. Secondly, combining the results of genomic relatedness analysis and cluster analysis, it was found that the existing Rongchang pig population could be divided into four families. Finally, we also counted the ROH of each individual and calculated the inbreeding coefficient value accordingly, whose mean value was 0.09. Conclusion: Due to the limitation of population size and other factors, the genetic diversity of this Rongchang pig population is low. The results of this study can provide basic data to support the development of Rongchang pig breeding program, the establishment of SPF Rongchang pig closed herd and its experimental utilization.

ADMISSIBLE BALANCED PAIRS OVER FORMAL TRIANGULAR MATRIX RINGS

  • Mao, Lixin
    • 대한수학회보
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    • 제58권6호
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    • pp.1387-1400
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    • 2021
  • Suppose that $T=\(\array{A&0\\U&B}\)$ is a formal triangular matrix ring, where A and B are rings and U is a (B, A)-bimodule. Let ℭ1 and ℭ2 be two classes of left A-modules, 𝔇1 and 𝔇2 be two classes of left B-modules. We prove that (ℭ1, ℭ2) and (𝔇1, 𝔇2) are admissible balanced pairs if and only if (p(ℭ1, 𝔇1), h(ℭ2, 𝔇2) is an admissible balanced pair in T-Mod. Furthermore, we describe when ($P^{C_1}_{D_1}$, $I^{C_2}_{D_2}$) is an admissible balanced pair in T-Mod. As a consequence, we characterize when T is a left virtually Gorenstein ring.

고이득 구현을 위한 K-밴드 $4{\times}4$ 마이크로스트립 패치 어레이 안테나의 설계 (The Design of $4{\times}4$ Microstrip Patch Array Antenna of K-Band for the High Gain)

  • 이하영;제프리 브론스타인;김형석
    • 한국정보통신설비학회:학술대회논문집
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    • 한국정보통신설비학회 2006년도 하계학술대회
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    • pp.193-196
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    • 2006
  • In this paper, two $4{\times}4$ rectangular patch array antennas operated at 20 GHz are implemented for the satellite communication. Two $2{\times}2$ sub-arrays are designed and used for the design of $4{\times}4$ patch array. The sixteen patch antennas and microstrip feeding line are printed on the single-layered substrate. The spacing between the array elements is chosen to be $0.736{\lambda}$. The HPBW(Half Power Beam Width) of the $4{\times}4$ microstrip patch array is 17.01 degrees in the E-plane and 17.71 degrees in the H-plane with a gain of 11.6dB in the experimental results. The HPBW of the recessed $4{\times}4$ microstrip patch array is 18.66 degrees in E-plane and 17.12 degrees in the H-plane with a gain of 12.55dB in the experimental results.

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Improvement of light extraction efficiency of display devices by using sub-wavelength scale structure

  • Kwon, Oh-Yung;Whang, Ki-Woong
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.1412-1414
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    • 2009
  • It is suggested that the light extraction efficiency of the display device can be improved by adoption of periodic array of sub-wavelength scale structures. The relief of the total reflection has been investigated using the rigorous coupled wave analysis (RCWA). Various shape of the sub-wavelength scale structure allowed to have non vanishing transmittance for the light rays with the incident angle bigger than the critical angle.

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ON THE WEAK LAW OF LARGE NUMBERS FOR ARRAYS OF PAIRWISE INDEPENDENT RANDOM VARIABLES

  • Hong, Dug-Hun;Hwang, Seok-Yoon;Kwon, Joong-Sung
    • 대한수학회논문집
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    • 제9권2호
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    • pp.419-421
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    • 1994
  • Recently Hong and Oh [5] provided a fairly general weak law for arrays in the following form: Let {(X/sub ni/, l ≤ i ≤ k/sub n/), n ≥ l}, k/sub n/ → ∞ as n → ∞, be an array of random variables on (Ω, F, P) and set F/sub nj/ = σ{X/sub ni/, 1 ≤ i ≤ j}, 1 ≤ j ≤ k/sub n/, n ≥ 1, and F/sub n0/ = {ø, Ω}, n ≥ 1. Suppose that (equation omitted) aP { X/sub ni/ /sup p/ > a} → 0 as a → ∞ uniformly in n for some 0 < p < 2. Then S/sub n//(equation omitted) → 0 in probability as n → ∞ where S/sub n/ = (equation omitted)(X/sub ni/ - E(X/sib ni/I( X/sub ni/ /sub p/ ≤ k/sub n/) F/sub n,i-l/)). In this note, we will prove the following result under the same domination condition of Hong and Oh [5].(omitted)

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GENERALIZED EULER POWER SERIES

  • KIM, MIN-SOO
    • Journal of applied mathematics & informatics
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    • 제38권5_6호
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    • pp.591-600
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    • 2020
  • This work is a continuation of our investigations for p-adic analogue of the alternating form Dirichlet L-functions $$L_E(s,{\chi})={\sum\limits_{n=1}^{\infty}}{\frac{(-1)^n{\chi}(n)}{n^s}},\;Re(s)>0$$. Let Lp,E(s, t; χ) be the p-adic Euler L-function of two variables. In this paper, for any α ∈ ℂp, |α|p ≤ 1, we give a power series expansion of Lp,E(s, t; χ) in terms of the variable t. From this, we derive a power series expansion of the generalized Euler polynomials with negative index, that is, we prove that $$E_{-n,{\chi}}(t)={\sum\limits_{m=0}^{\infty}}\(\array{-n\\m}\)E_{-(m+n),{\chi}^{t^m}},\;n{\in}{\mathbb{N}}$$, where t ∈ ℂp with |t|p < 1. Some further properties for Lp,E(s, t; χ) has also been shown.

물분해용 Cu2O 박막/ZnO 나노막대 산화물 p-n 이종접합 광전극의 광전기화학적 특성 (Photoelectrochemical Properties of a Cu2O Film/ZnO Nanorods Oxide p-n Heterojunction Photoelectrode for Solar-Driven Water Splitting)

  • 박정환;김효진;김도진
    • 한국재료학회지
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    • 제28권4호
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    • pp.214-220
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    • 2018
  • We report on the fabrication and photoelectrochemical(PEC) properties of a $Cu_2O$ thin film/ZnO nanorod array oxide p-n heterojunction structure with ZnO nanorods embedded in $Cu_2O$ thin film as an efficient photoelectrode for solar-driven water splitting. A vertically oriented n-type ZnO nanorod array was first prepared on an indium-tin-oxide-coated glass substrate via a seed-mediated hydrothermal synthesis method and then a p-type $Cu_2O$ thin film was directly electrodeposited onto the vertically oriented ZnO nanorods array to form an oxide semiconductor heterostructure. The crystalline phases and morphologies of the heterojunction materials were characterized using X-ray diffraction and scanning electron microscopy as well as Raman scattering. The PEC properties of the fabricated $Cu_2O/ZnO$ p-n heterojunction photoelectrode were evaluated by photocurrent conversion efficiency measurements under white light illumination. From the observed PEC current density versus voltage (J-V) behavior, the $Cu_2O/ZnO$ photoelectrode was found to exhibit a negligible dark current and high photocurrent density, e.g., $0.77mA/cm^2$ at 0.5 V vs $Hg/HgCl_2$ in a $1mM\;Na_2SO_4$ electrolyte, revealing an effective operation of the oxide heterostructure. In particular, a significant PEC performance was observed even at an applied bias of 0 V vs $Hg/HgCl_2$, which made the device self-powered. The observed PEC performance was attributed to some synergistic effect of the p-n bilayer heterostructure on the formation of a built-in potential, including the light absorption and separation processes of photoinduced charge carriers.

Experimental Demonstration of Enhanced Transmission Due to Impedance-matching Si3N4 Layer in Perforated Gold Film

  • Park, Myung-Soo;Yoon, Su-Jin;Hwang, Je-Hwan;Kang, Sang-Woo;Kim, Deok-kee;Ku, Zahyun;Urbas, Augustine;Lee, Sang Jun
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.359-359
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    • 2014
  • In this study, surface plasmon resonance structures for the selective and the enhanced transmission of infrared light were designed. In order to relieve the large discontinuity of refractive index between air and metal hole array, $Si_3N_4$ was used as the impedance matching layer. Experimental parameter were calculated and determined in advance by the rigorous coupled wave analysis (RCWA) simulation, and then the experiment was carried out. A 2-dimensional metal hole array structures were patterned on the size of $1{\times}1cm^2$ GaAs substrate using photolithography process, and 5 nm thick Ti, 50 nm thick Au were deposited by E-beam evaporator, respectively. Subsequently, $Si_3N_4$ films with various thicknesses (150, 350, 550, and 750 nm) were deposited by plasma enhanced chemical vapor deposition (PECVD). For the comparison, transmittance of specimens with and without $Si_3N_4$ was measured using Fourier transform infrared spectroscopy (FTIR) in the range of $2.5-15{\mu}m$. Furthermore, the surface and the cross-sectional images were collected from the specimens by scanning electron microscopy (SEM). From the results, it was demonstrated that the transmittance was enhanced up to 80% by the deposition of 750 nm $Si_3N_4$ at $6.23{\mu}m$. It has advantage of enhanced transmission despite the simple fabrication process.

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