• Journal of the Korean Society for Industrial and Applied Mathematics
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• v.26 no.4
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• pp.263-279
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• 2022

This paper presents an automatic inspection of defects in semiconductor images. We devise a statistical method to find defects on homogeneous background from the observation that it has a log-normal distribution. If computer aided design (CAD) data is available, we use it to construct a signed distance function (SDF) and change the pixel values so that the average of pixel values along the level curve of the SDF is zero, so that the image has a homogeneous background. In the absence of CAD data, we devise a hybrid method consisting of a model-based algorithm and two neural networks. The model-based algorithm uses the first right singular vector to determine whether the image has a linear or complex structure. For an image with a linear structure, we remove the structure using the rank 1 approximation so that it has a homogeneous background. An image with a complex structure is inspected by two neural networks. We provide results of numerical experiments for the proposed methods.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.87.1-87.1
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• 2016

The unique properties of 2D materials significantly rely on the atomic structure and defects. Thus study at atomic scale is crucial for in-depth understanding of 2D materials and provides insights into its future applications. Using aberration-corrected transmission electron microscopes, atomic resolution imaging of individual atoms has been achieved even at a low kV. Ongoing optimization of aberration correction improves the spatial resolution better than angstrom and moreover boosts the contrast of light atoms. I present the recent progress of the study on the atomic structure and defects of monolayer and multilayer graphene, hBN and MoS2. Furthermore, the defect formation mechanisms of graphene, hexagonal boron nitride and MoS2 are discussed.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.33 no.8
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• pp.807-812
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• 2009

Most structure engineers give the casting components over-estimated factor of safety without any reasonable foundation due to the worries about the unavoidable defects such as shrinkages and porosity in castings; the engineers have little knowledge on the relation between the defect and structural behavior. And the workers in casting field also do not know how to control the defects by manufacturing; they do not know to where the defects move or until how size they reduce the defects. In this study, shrinkage defect was scanned by industrial computerized tomography instrument (CT), and subsequently was modeled to a spheroid primitive for structural analysis. Using these simplified models of shrinkage, we observed the effects of the defect on the results of the structural analysis. A commercial structural analysis code was used to do the analysis works. Considering the conclusions, it is possible to manage the shrinkages effectively in casting process and to design the products with more reliable

• Transactions of the Korean Society of Mechanical Engineers A
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• v.27 no.2
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• pp.327-333
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• 2003

Most of shape defects in steel strip are originated from the structure of rolling mill itself. For instance, strip crown occurs when the work roll is deformed by the bending moment induced on roll chocks. To get rids of the shape defects, it is necessary to increase the stiffness of rolling mill. The structure change of back-up roll is one of alternative ways to increase the mill stiffness without facility revamping from 4 high mill to 6 high mill. In this research work, the new back-up roll was developed and can be used in any type of 4 high mill to reduce the strip shape defects. The developed back-up roll consists of sleeve, arbor and phase angle adjusting system for arbor. The circumference of arbor is specially machined to adapt the strip width change during rolling. The experimental cold rolling test was done to prove the effectiveness of newly developed back-up roll. The experimental rolling results show that the new back-up roll has more powerful performance in reducing the shape defects than conventional back-up roll. It was also found that the new back-up roll has higher stability for shape control. In addition to, the only sleeve surface needs to be reground and changed in most cases, so that the maintenance cost can be greatly reduced.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.90-93
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• 2000

In this study, the rise throughput and the stability in fabrication of device can be obtained by applying of CMP process to STI structure in 0.18um semiconductor device. To employ in STI CMP, the reverse moat process has been added thus the process became complex and the defects were seriously increased. Removal rates of each thin films in STI CMP was not equal hence the devices must to be effected, that is, the damage was occured in the device dimension in the case of excessive CMP process and the nitride film was remained on the device dimension in the case of insufficient CMP process than these defects affect the device characteristics. To resolve these problems, the development of slurry for CMP with high removal rate and high selectivity between each thin films was studied then it can be prevent the reasons of many defects by reasons of many defects by simplification of process that directly apply CMP process to STI structure without the reverse moat pattern process.

• Composites Research
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• v.15 no.5
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• pp.19-26
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• 2002

Real defects in composite structures were detected by using laser measuring system. Four types of real defects, that is, impact-induced delamination in a composite laminate, debond in a honeycomb structure, free-edge delamination in a composite laminate and debond in an adhesive joint, were made by applying several types of loads to the specimens. Laser measuring system such as ESPI and shearography technique were used to detect those defects. Thermal loading method, which can easily induce the surface deformation of specimen, was used to detect the defects. Experimental results show that the defects in composite structures could be easily detected by ESPI and shearography technique. Moreover, it shows that ESPI and shearography technique could be usefully applied to the detection of defects in various kinds of composite structures.

• Korean Journal of Materials Research
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• v.20 no.12
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• pp.645-648
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• 2010

The structure and morphology of epitaxial layer defects in epitaxial Si wafers produced by the Czochralski method were studied using focused ion beam (FIB) milling, scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Epitaxial growth was carried out in a horizontal reactor at atmospheric pressure. The p-type Si wafers were loaded into the reactor at about $800^{\circ}C$ and heated to about $1150^{\circ}C$ in $H_2$. An epitaxial layer with a thickness of $4{\mu}m$ was grown at a temperature of 1080-$1100^{\circ}C$. Octahedral void defects, the inner walls of which were covered with a 2-4 nm-thick oxide, were surrounded mainly by $\{111\}$ planes. The formation of octahedral void defects was closely related to the agglomeration of vacancies during the growth process. Cross-sectional TEM observation suggests that the carbon impurities might possibly be related to the formation of oxide defects, considering that some kinds of carbon impurities remain on the Si surface during oxidation. In addition, carbon and oxygen impurities might play a crucial role in the formation of void defects during growth of the epitaxial layer.

• Korean Journal of Materials Research
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• v.2 no.4
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• pp.248-256
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• 1992

This paper has reviewed some of the basic principles that underlie the field of defect chemistry in simple ATi$O_3$(A=Ca, Sr, Ba) perovskites. Frenkel defects in perovskite structure is very much unlikely, and Schottky defects and intrinsic electronic defects in undoped materials are negligibly small compared with background acceptor impurities. The electrical properties of perovskite ceramics are dependent on the aliovalent impurities. Since perovskite structure is a ternary system, the stoiohiometry between cations as well as cation-anion ratio will affect defect structure and electrical properties. BaTi$O_3$and SrTi$O_3$show a limited deviation from the cation stoichiometry while CaTi$O_3$has significant excess CaO and Ti$O_2$solubility.

• Journal of the Optical Society of Korea
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• v.19 no.1
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• pp.63-68
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• 2015

A one-step fabrication of a photonic crystal (PC) with functional defects is demonstrated. Using multi-beam phase-controlled holographic lithography with a diffracting optical element, large area one dimensional (1D) and two dimensional (2D) PCs with periodic defects were fabricated. The uniform area is up to $2mm^2$, and tens of defect channels have been introduced in the 1D and 2D PC structure. This technique gives rise to substantial reduction in the fabrication complexity and significant improvement in the spatial accuracy of introducing functional defects in photonic crystals. This method can also be used to design and fabricate three dimensional (3D) PCs with periodic defects.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.340-340
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• 2010

Various structures of vacancy defects in graphene layers and carbon nanotubes have been reported by high resolution transmission electron microscope (HR-TEM) and those arouse an interest of reconstruction processes of vacancy defects. In this talk, we present reconstruction processes of vacancy defects in a graphene and a carbon nanotube by tight-binding molecular dynamics (TBMD) simulations and by first principles total energy calculations. We found that a structure of a dislocation defect with two pentagon-heptagon (5-7) pairs in graphene becomes more stable than other structures when the number of vacancy units is ten and over. The simulation study of scanning tunneling microscopy reveals that the pentagon-heptagon pair defects perturb the wavefunction of electrons near Fermi level to produce the $\sqrt{3}\;{\times}\;\sqrt{3}$ superlattice pattern, which is in excellent agreement with experiment. It is also observed in our tight-binding molecular dynamics simulation that 5-7 pair defects play a very important role in vacancy reconstruction in a graphene layer and carbon nanotubes.