• 한국경제지리학회지
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• 제15권1호
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• pp.116-130
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• 2012

성장동력산업의 육성 정책에 따라 부가가치가 높은 산업을 광역 경제권단위에서 육성하는 정책이 진행되고 있다. 이 분석의 목적은 창조산업의 대표적 분야인 디자인산업을 발전시키고 있는 지식을 기반으로 한 네트워크의 공간적 특성과 기관별 네트워크 구조를 도출하고, 2000년에서 2010년까지의 시간적 변화에 초점을 두어 분석함으로서 앞으로 나아가야 할 방안을 모색해 보고자한다. 먼저 전국 디자인산업의 변화와 시도별 광역별 성장을 살펴보고 심층인터뷰를 실시하여 기관별 네트워크 현황을 파악하였다. 이를 기반으로 디자인산업과 관계된 공동연구 데이터를 가공하여 구조적, 공간적, 시간적인 측면을 고려하여 종합적인 판단으로 공간적 특성과 기관별 네트워크 구조의 변화에 대해 분석하였다. 또한 그룹분석에 활용되는 지표를 이용하여 네트워크의 밀도, 링크수, 집중도를 기준으로 다른 그룹과 상대적으로 변화하는 하는 과정을 비교 분석하였다.

• 한국세라믹학회지
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• 제32권12호
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• pp.1392-1400
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• 1995

WC-10wt%Co-Al2O3 ceramic composites, using both the SHS (Self-propagating High Temperature Synthesis) synthesized WC powder method and commercial WC powder, were prepared by varing WC-Co/Al2O3 vol% ratio and sintering temperature (1350℃∼1650℃) for 1 hr in Ar atmosphere. Mechanical characterization has been investigated by Instron meterial testing system and Vicker's hardness test. Compositional and structural chracterizations were carried out by energy-dispersive analysis of X-ray (EDAX) data and scanning electron microscope (SEM). Electrical characterization was carried out by the electrical resistivity measurement using 4-point probe method. As sintering period increased and Al2O3 contents decreased in WC-10wt%Co-Al2O3 ceramic composite, shrinkage and relative density increased, resulting in maximum values at 1600℃. Also the major matrix phase changed with increasing Al2O3 content from 0 to 100 vol%. It was also identified by SEM, EDAX, and electrical resistivity measurement. Based on the results of analysis of flexural strength, toughness and hardness, the mechanical properties of WC-10wt%Co-Al2O3 ceramic composites using the SHS synthesized WC powder were better than those WC-10wt%Co-Al2O3 ceramic composites using commercial WC powder because WC-10wt%Co-Al2O3 ceramic composites using the SHS synthesized WC powder were sintered very well due to small initial particle size. By the addition of 40 vol% Al2O3 [60(WC=10wt%Co)-40Al2O3], it was possible to obtain a proper candidate as a superalloy.

• 한국생물물리학회:학술대회논문집
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• 한국생물물리학회 2003년도 정기총회 및 학술발표회
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• pp.68-68
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• 2003

HP(2-20) (AKKVFKRLEKLEKLFSKIQNDK) derived from the N-terminus of Helicobacter pylori Ribosomal Protein L1 shows potent antimicrobial activity against bacterial, fungi and cancer cells without cytotoxic effect. In order to investigate the relationships between antimicrobial activity and the structures, several analogues have been designed and synthesized. The structures of these peptides in SDS micelles have been investigated using NMR spectroscopy and they revealed that analogue 3 has the longest, well-defined alpha-helix from Val5 to Trp19. NOESY experiments performed on HP and its analogues in nondeuterated SDS micelles show that protons in the indole ring of Trp16 are in close contact with methylene protons of SDS micelles. In order to probe the position of HP and its analogues relative to the SDS micelles, spin-labeled stearate was added. Large effects are observed for the chemical shifts and the intensities of Phe5, Glu9, Phe12, and Trp16 within the helix region by 16-doxylstearate. This result implies that 16-doxylstearate is located in the center of the micelles and the hydrophobic phase of the amphiphilic ${\alpha}$-helix is located in contact with the acyl chains of the micelles. Also, Lys3 and Lys4 at N-terminus and Lys20 at C-terminus may produce an optimal arrangement for electrostatic interactions between the sulfate head groups of the SDS and the positively charged lysyl N$\sub$3/$\^$+/. Interactions between the indole ring of Trp and the membrane, as well as the amphiphilic ${\alpha}$-helical structure of HP induced by Trp at the C-terminus may allow HP to span the lipid bilayer. These structural features are crucial for their potent antibiotic activities.

• 전기전자학회논문지
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• 제17권2호
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• pp.182-188
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• 2013

Using a ceramic target ZnO:In with In doping concentration of 2%, hetero-junctions of n-ZnO:In/p-Si and p-ZnO:(In, N)/n-Si were fabricated by depositing Indium doped n - type ZnO (ZnO:In or IZO) and Indium-nitrogen co-doped p - type ZnO (ZnO:(In, N)) films on wafers of p-Si (100) and n-Si (100) by DC magnetron sputtering, respectively. These films with the best electrical and optical properties were then obtained. The micro-structural, optical and electrical properties of the n-type and p-type semiconductor thinfilms were characterized by X-ray diffraction (XRD), RBS, UV-vis; four-point probe resistance and room-temperature Hall effect measurements, respectively. Typical rectifying behaviors of p-n junction were observed by the current-voltage (I-V) measurement. It shows fairly good rectifying behavior with the fact that the ideality factor and the saturation current of diode are n=11.5, Is=1.5108.10-7 (A) for n-ZnO:In/p-Si hetero-jucntion; n=10.14, Is=3.2689.10-5 (A) for p-ZnO:(In, N)/n-Si, respectively. These results demonstrated the formation of a diode between n-type thin film and p-Si, as well as between p-type thin film and n-Si..

• 한국전기전자재료학회논문지
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• 제28권10호
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• pp.652-657
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• 2015

We have investigated the properties of Al-doped ZnO (AZO) thin films as functions of atomic layer deposition (ALD) oxidants. AZO transparent conducting oxides (TCOs) layer was deposited by ALD with adding trimethylaluminum (TMA) and diethylzinc (DEZn). AZO films were deposited at low temperature with $H_2O$ and $O_3$ as oxidants. Electrical, optical and structural properties of AZO thin films were investigated by 4-point probe, Hall effect measurement, UV-VIS, and AFM. Microstructure and atomic bonding states were investigated by HRXRD and XPS. The resistivity of AZO films grown using $H_2O$ was lower than the films grown using $H_2O$ and $O_3$, by approximately two orders of magnitude. The differences in oxygen vacancy peak intensity of AZO films were correlated to the optical and electrical properties.

• 한국전기전자재료학회논문지
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• 제24권9호
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• pp.755-759
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• 2011

$Cu(In_{1-x},Ga_x)Se_2$ thin films have been considered as an effective absorber material for high efficient solar cells. In this paper, the CIGS thin films with varied Ga content were prepared using a co-evaporation process of three stage. We carry out structure and electrical optical property on the thin film in varied Ga content. CIGS thin films have been characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM), energy-dispersive spectroscopy(EDS), four-point probe measurement, and the Hall measurement. To optimize Ga contents, Ga/(In+Ga) ratio were changed from 0.13 to 0.72. At this time the carrier concentrations were varied from $1.22{\times}10^{11}\;cm^{-3}$ to $5.07{\times}10^{16}\;cm^{-3}$, and electrical resistivity were varied from $1.11{\times}10^0\;{\Omega}-cm$ to $1.08{\times}10^2\;{\Omega}-cm$. A strong <220/204> orientation and a lager grain size were obtained at a Ga/(In+Ga) of 0.3. We were able to achieve conversion efficiency as high as 15.95% with a Ga/(In+Ga) of 0.3.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.381-382
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• 2007

IZO/Ag/IZO (IAI) anode films for flexible organic light emitting diodes (OLEDs) were grown on PC (polycarbonate) substrate using DC sputter (IZO) and thermal evaporator (Ag) systems as a function of Ag thickness. To investigate electrical and optical properties of IAI stacked films, 4-point probe and UV/Vis spectrometer were used, respectively. From a IAI stacked film with 12nm-thick Ag, sheet resistance of $6.9\;{\Omega}/{\square}$ and transmittance of above 82 % at a range of 500-550 nm wavelength were obtained. In addition, structural and surface properties of IAI stacked films were analyzed by XRD (X-ray diffraction) and SEM (scanning electron microscopy), respectively. Moreover, IAI stacked films showed dramatically improved mechanical properties when subjected to bending both as a function of number of cycles to a fixed radius. Finally, OLEDs fabricated on both flexible IAI stacked anode and conventional ITO/Glass were fabricated and, J-V-L characteristics of those OLEDs were compared by Keithley 2400.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.174-174
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• 2010

Gallium Nitride(GaN) attracts great attention due to their wide band gap energy (3.4eV), high thermal stability to the solid state lighting devices like LED, Laser diode, UV photo detector, spintronic devices, solar cells, sensors etc. Recently, researchers are interested in synthesis of polycrystalline and amorphous GaN which has also attracted towards optoelectronic device applications significantly. One of the alternatives to deposit GaN at low temperature is to use Single Source Molecular Percursor (SSP) which provides preformed Ga-N bonding. Moreover, our group succeeds in hybridization of SSP synthesized GaN with Single wall carbon nanotube which could be applicable in field emitting devices, hybrid LEDs and sensors. In this work, the GaN thin films were deposited on c-axis oriented sapphire substrate by MBE (Molecular Beam Epitaxy) using novel single source precursor of dimethyl gallium azido-tert-butylamine($Me_2Ga(N_3)NH_2C(CH_3)_3$) with additional source of ammonia. The surface morphology, structural and optical properties of GaN thin films were analyzed for the deposition in the temperature range of $600^{\circ}C$ to $750^{\circ}C$. Electrical properties of deposited thin films were carried out by four point probe technique and home made Hall effect measurement. The effect of ammonia on the crystallinity, microstructure and optical properties of as-deposited thin films are discussed briefly. The crystalline quality of GaN thin film was improved with substrate temperature as indicated by XRD rocking curve measurement. Photoluminescence measurement shows broad emission around 350nm-650nm which could be related to impurities or defects.

• Journal of Genetic Medicine
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• 제3권1호
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• pp.5-10
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• 1999

This is a case report of 46,XY female phenotype (46,XY karyotype, no pubic hair, blind vagina and absence of uterus)in an 18-year-old patient. To confirm whether a Y chromosome has a structural abnormality, fluorescent in situ hybridization (FISH) with the chromosome X/Y cocktail probe was simultaneously performed, and the six loci [PABY, RPS4Y(sy16, sy17), ZFY, DYS14] on the short arm, one locus (DYZ3) on the centromere and one locus (DYZ1) on the long arm were amplified by polymerase chain reaction (PCR). The probes used FISH hybridized to centromere of the X chromosome and heterochromatin region (Yq12) of the Y chromosome, and all PCR related Y chromosome showed positive band like normal male. From the results obtained, it seemed that the Y chromosome from the 46,XY female was structurely normal. Especially, the SRY gene has been equated with the mammalian testis-determining factor, and absence or point mutation in the SRY gene causes XY female. To detect the point mutations of SRY sequences, single-strand conformation polymorphism (SSCP) assay was used. Our results confirm that this patient has no mutation in the SRY gene on the Y chromosome.

• KSII Transactions on Internet and Information Systems (TIIS)
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• 제10권10호
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• pp.4997-5013
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• 2016

This paper proposes and then verifies a model that can be used to forecast the effects of behavior on mobile advertising based on the Technology Acceptance Model (TAM) and Web Advertising Effect. The objective of this research is to probe the relationship between the cause and effect of the entertainment, informativeness, usefulness, capacity to accommodate smart-environment technologies, Hedonic Adaptation Model (HAM), etc. that mobile advertisements provide, as well as the attitudes toward advertisements in general. In order to accomplish this goal, the research was verified using Structural Equation Modeling (SEM), and the results are as follows. First, the informativeness of mobile advertising has a positive effect on the recognized ease of use. Second, the entertainment and informativeness of mobile advertising has positive effects on the recognized usefulness. Third, the recognized ease of use has a positive effect on the recognized usefulness. Fourth, the informativeness of mobile advertising causes a positive effect on smart-environment technologies. Fifth, the entertainment and informativeness of mobile advertising cause positive effects on the HAM. Sixth, smart-environment technologies cause positive effects on the HAM. Seventh, the recognized usefulness causes a positive effect on the value of mobile advertising and the intention of use. Eighth, the HAM has a positive effect on the value of mobile advertising and the general attitudes toward it. Ninth, the value of mobile advertising has a positive effect on the attitudes toward advertising. Tenth, the attitudes toward mobile advertising have a positive effect on the intention of use.