• The Korean Journal of Physiology and Pharmacology
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• v.17 no.5
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• pp.463-468
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• 2013

Acute hypoxia induces contraction of pulmonary artery (PA) to protect ventilation/perfusion mismatch in lungs. As for the cellular mechanism of hypoxic pulmonary vasoconstriction (HPV), hypoxic inhibition of voltage-gated $K^+$ channel (Kv) in PA smooth muscle cell (PASMC) has been suggested. In addition, our recent study showed that thromboxane $A_2$ ($TXA_2$) and hypoxia-activated nonselective cation channel ($I_{NSC}$) is also essential for HPV. However, it is not well understood whether HPV is maintained in the animals exposed to ambient hypoxia for two days (2d-H). Specifically, the associated electrophysiological changes in PASMCs have not been studied. Here we investigate the effects of 2d-H on HPV in isolated ventilated/perfused lungs (V/P lungs) from rats. HPV was almost abolished without structural remodeling of PA in 2d-H rats, and the lost HPV was not recovered by Kv inhibitor, 4-aminopyridine. Patch clamp study showed that the hypoxic inhibition of Kv current in PASMC was similar between 2d-H and control. In contrast, hypoxia and $TXA_2$-activated $I_{NSC}$ was not observed in PASMCs of 2d-H. From above results, it is suggested that the decreased $I_{NSC}$ might be the primary functional cause of HPV disappearance in the relatively early period (2 d) of hypoxia.

• Proceedings of the Korean Vacuum Society Conference
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• 1995.02a
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• pp.36-36
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• 1995

The cubic (zinc blende) CdSe eppilayers were grown on GaAs(100) substrates by electron beam (e-beam) evapporation technique. X-ray scans with copper $K\alpha$ radiation indicate that the CdSe eppilayers are zinc blende. The lattice pparameter obtained from the (400) reflection is 6.077$\AA$, which is in excellent agreement with the value repported in the literature for zinc blende CdSe. The orientation of as-grown CdSe eppilayer is determined by electron channeling ppatterns(ECpp). The crystallinity of heteroeppitaxial CdSe layers were investigated based on the double crystal x-ray rocking curve(DCRC). The deppendence of the rocking curve width on layer thickness was studied. The FWHM(full width at half maximum) of CdSe eppilayers grown on GaAs(100) substrates is decreasing with increasing eppilayer thickness. The carrier concentration and mobility of the as-grown eppilayers deduced Hall data by van der ppauw method, are about 7$\times$1017 cm-3 and 2$\times$102 $\textrm{cm}^2$ / sec at room tempperature, resppectively. The energy gapp was determinded from the pphotocurrent sppectrum. In pphotocurrent sppectrum of a 1-${\mu}{\textrm}{m}$-thick CdSe eppilayer at 30K, the ppeak at 1.746 eV is due to the free exciton of cubic CdSe. In summary, We have shown that eppilayers of zinc blende CdSe can be grown on GaAs(100) substrates by e-beam, desppite the large mismatch between eppilayer and substrate, as well as the natural ppreference for CdSe to form in the wurtzite structure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.2
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• pp.104-110
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• 2001

Structural, optical and electrical properties of Cd$_{1-x}$ Zn$_{x}$S films deposited by chemical bath deposition(CBD), which is a very attractive method for low-cost and large-area solar cells, are presented. Especially, in order to control more effectively the zinc component of the films, zinc acetate, which was used as the zinc source, was added in the reaction solution after preheating the reaction solution and the pH of the reaction solution decreased with increasing the concentration of zinc acetate. The films prepared after preheating and pH control had larger zinc component and higher optical band gap. The crystal structures of Cd$_{1-x}$ Zn$_{x}$S films was a wurtzite type with a preferential orientation of the (002) plane and the lattice constants of the films changed from the value for CdS to those for ZnS with increasing the mole ratio of the zinc acetate. The minimum lattice mismatch between Cd$_{1-x}$ Zn$_{x}$S and CdTe were 2.7% at the mole ratio of (ZnAc$_2$)/(CdAc$_2$+ZnAc$_2$)=0.4. As the more zinc substituted for Cd in the films, the optical transmittance improved, while the absorption edge shifted toward a shorterwavelength. the photoconductivity of the films was higher than the dark conductivity, while the ratio of those increased with increasing the mole ratio of zinc acetate. acetate.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.354-354
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• 2012

In this study, we report the vertically aligned ZnO nanowires by using different type of Ga-doped ZnO (GZO) thin films as seed layers to investigate how the underlying GZO film micro structure affects the distribution of ZnO nanowires. Arrays of highly ordered ZnO nanowires have been synthesized on GZO thin film seed layer prepared on p-Si substrates ($7-13{\Omega}cm$) with utilize of a pulsed laser deposition (PLD). With the vapor-liquid-solid (VLS) growth process, the ZnO nanowire synthesis carries out no metal catalyst and is cost-effective; furthermore, The GZO seed layer facilitates the uniform growth of well-aligned ZnO nanowires. The influence of the growth temperature and various thickness of GZO seed layer have been analyzed. Crystallinity of grown seed layer was studied by X-Ray diffraction (XRD); diameter and morphology of ZnO nanowires on seed layer were investigated by field emission scanning electron microscopy (FE-SEM). Our results suggest that the GZO seed layer with high c-axis orientation, good crystallinity, and less lattice mismatch is key parameters to optimize the growth of well-aligned ZnO nanowire arrays.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.630-630
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• 2013

Recently, atomically smooth hexagonal boron nitride(h-BN) known as a white graphene has drawn great attention since the discovery of graphene. h-BN is a III-V compound and has a honeycomb structure very similar to graphene with smaller lattice mismatch. Because of strong covalent sp2bonds like graphene, h-BN provides a high thermal conductivity and mechanical strength as well as chemical stability of h-BN superior to graphene. While graphene has a high electrical conductivity, h-BN has a highly dielectric property as an insulator with optical band gap up to 6eV. Similar to the graphene, h-BN can be applied to a variety of field, such as gate dielectric layers/substrate, ultraviolet emitter, transparent membrane, and protective coatings. However, up until recently, obtaining and controlling good quality monolayer h-BN layers have been too difficult and challenging. In this work, we investigate the controlled synthesis of h-BN layers according to the growth condition, time, temperature, and gas partial pressure. h-BN is obtained by using chemical vapor deposition on Cu foil with ammonia borane (BH3NH3) as a source for h-BN. Scanning Transmission Electron Microscopy (STEM, JEOL-JEM-ARM200F) is used for imaging and structural analysis of h-BN layer. Sample's surface morphology is characterized by Field emission scanning electron microscopy (SEM, JEOL JSM-7100F). h-BN is analyzed by Raman spectroscopy (HORIBA, ARAMIS) and its topographic variations by Atomic force microscopy (AFM, Park Systems XE-100).

• Journal of the Korea Concrete Institute
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• v.17 no.6 s.90
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• pp.939-946
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• 2005

The stiffness properties of heterogeneous concrete materials and their degradation were investigated at different-levels of observations with aids of the opportunities and limitations of multi-resolution wavelet analysis. The successive Haw transformations lead to a recursive separation of the stiffness properties and the response into coarse-and fine-scale features. In the limit, this recursive process results in a homogenization parameter which is an average measure of stiffness and strain energy capacity at the coarse scale. The basic concept of multi-resolution analysis is illustrated with one and two-dimensional model problems of a two-phase particulate composite representative of the morphology of concrete materials. The computational studies include the meso-structural features of concrete in the form of a hi-material system of aggregate particles which are immersed in a hardened cement paste taking due to account of the mismatch of the two elastic constituents.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.3
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• pp.120-123
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• 2005

The 5 mol% ZnO doped $LiNbO_3$ film and the 2 mol% MgO doped $LiNbO_3$ film were grown on the $LiNbO_3$ (001) substrate by liquid phase epitaxy (LPE) method with $Li_2CO_3-V_2O_5$ flux system. The crytsallinity and the lattice mismatch between $Zn:LiNbO_3$, film and $Mg:LiNbO_3$, film were analyzed by x-ray rocking curve (XRC). In addition, the ZnO and MgO distribution in the cross-section of the multilayer thin films was observed using electron probe micro analyzer (EPMA).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.469-472
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• 1999

CeO$_2$ thin films have used in wide applications such as SOI, buffer layer, antirflection coating, and gate dielectric layer. CeO$_2$takes one of the cubic system of fluorite structure and shows similar lattice constant (a=0.541nm) to silicon (a=0.543nm). We investigated CeO$_2$films as buffer layer material for nonvolatile memory device application of a single transistor. Aiming at the single transistor FRAM device with a gate region configuration of PZT/CeO$_2$ /P-Si , this paper focused on CeO$_2$-Si interface properties. CeO$_2$ films were grown on P-type Si(100) substrates by 13.56MHz RF magnetron sputtering system using a 2 inch Ce metal target. To characterize the CeO$_2$ films, we employed an XRD, AFM, C-V, and I-V for structural, surface morphological, and electrical property investigations, respectively. This paper demonstrates the best lattice mismatch as low as 0.2 % and average surface roughness down to 6.8 $\AA$. MIS structure of CeO$_2$ shows that breakdown electric field of 1.2 MV/cm, dielectric constant around 13.6 at growth temperature of 200 $^{\circ}C$, and interface state densities as low as 1.84$\times$10$^{11}$ cm $^{-1}$ eV$^{-1}$ . We probes the material properties of CeO$_2$ films for a buffer layer of FRAM applications.

• Journal of the Korean Ceramic Society
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• v.53 no.5
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• pp.506-510
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• 2016

The eutectic melt of BaO-CuO flux is known to be a potential sintering aid for $Ba(Zr,Y)O_3$ (BZY) electrolyte for proton-conducting ceramic fuel cells (PCFCs). A density of BZY higher than 97% of theoretical density can be achieved via sintering at $1300^{\circ}C$ for 2 h using a flux composed of 28 mol% BaO and 72 mol% CuO. In the present study, chemical and structural evolution of BaO-CuO flux throughout the sintering process was investigated. An intermediate holding step at $1100^{\circ}C$ leads to formation of various impurity compounds such as $BaCuO_{1.977}$, $Ba_{0.92}Cu_{1.06}O_{2.28}$ and $Cu_{16}O_{14.15}$, which exhibit significantly larger unit cell volumes than the matrix. The presence of such secondary compounds with large lattice mismatch can potentially lead to mechanical failure. On the other hand, direct heating to the final sintering temperature produced CuO and $Cu_2O$ as secondary phases, whose unit cell volumes are close to that of the matrix. Therefore, the final composition of the flux is strongly affected by the thermal history, and a proper sintering schedule should be used to obtain the desired properties of the final product.

• Earthquakes and Structures
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• v.26 no.5
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• pp.349-361
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• 2024

Excessive torsional behaviour is one of the major reasons for failure of buildings, as inferred from past earthquakes. Numerous seismic codes across the world specify a displacement-based or drift-based criterion for classifying buildings as torsionally irregular. In recent years, quite a few researchers have pointed out some of the inherent deficiencies associated with the current codal guidelines on torsional irregularity. This short communication paper aims to envisage the need for a revision of the displacement-based guidelines on torsional irregularity, and further highlight the appropriateness of a rotation-based criterion. A set of 6 reinforced concrete building models with asymmetric shear walls are analysed using ETABS v18.0.2, by varying the number of stories from 1 to 9, and the torsional irregularity coefficient of various stories is calculated using the displacement-based formula. Since rotation about the vertical axis is a direct indication of the twist experienced by a building, the calculated torsional irregularity coefficients of all stories are compared with the corresponding floor rotations. The conflicting results obtained for the torsional irregularity coefficients are projected through five categories, namely mismatch with floor rotations, inconsistency in trend, lack of clarity in incorporation of negative values, sensitivity to low values of displacement and error conceived in the mathematical formulation. The findings indicate that the irregularity coefficient does not accurately represent the torsional behaviour of buildings in a realistic sense. The Indian seismic code-based values of 1.2 and 1.4, which are used to characterize buildings as torsionally irregular are observed to be highly sensitive to the numerical values of displacements, rather than the actual degree of rotation. The study thus emphasizes the revision of current guidelines based on a more relevant rotation-based or eccentricity-based approach.