• Bulletin of the Korean Chemical Society
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• 제22권9호
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• pp.994-998
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• 2001

Ni, Fe and NiFe alloy thin films were electrodeposited at a polycrystalline Au surface using a range of electrolytes and potentials. Coulometry and EQCM were used for real-time monitoring of electroplating efficiency of the Ni and Fe. The plating efficiency of NiFe alloy thin films was computed with the aid of ICP spectrometry. In general, plating efficiency increased to a steady value with deposition time. Plating efficiency of Fe was lower than that of Ni at -0.85 and -1.0 V but the efficiency approached to the similar plateau value to that of Ni at more negative potentials. The films with higher content of Fe showed different stripping behavior from the ones with higher content of Ni. Finally, compositional data and real-time plating efficiency are presented for films electrodeposited using a range of electrolytes and potentials.

• 자원리싸이클링
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• 제22권4호
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• pp.81-90
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• 2013

1990년대 이후 정보통신산업의 급속한 발전으로 반도체 및 LCD의 수요가 지속적으로 증가하고 있다. 이에 따라 미세회로 패턴형성에 핵심이 되는 감광제와 이의 희석 제거에 사용되는 고가의 시너, 박리액의 수요가 급격히 증가하고 있어, 폐시너, 폐박리액에 대한 재활용 필요성이 대두되고 있는 실정이다. 최근 경제적인 측면과 환경적인 측면, 효율성에 관한 측면에서 스트리핑 공정폐액의 재활용 기술이 폭넓게 연구되고 있다. 본 연구에서는 스트리핑 공정폐액의 재활용 기술에 대한 특허와 논문을 분석하였다. 분석범위는 1981년~2010년까지의 미국, 유럽연합, 일본, 한국의 등록/공개된 특허와 SCI 논문으로 제한하였다. 특허와 논문은 키워드를 사용하여 수집하였고, 기술의 정의에 의해 필터링 하였다. 특허와 논문의 동향은 연도, 국가, 기업, 기술에 따라 분석하여 나타내 보았다.

• 자원리싸이클링
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• 제30권2호
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• pp.39-45
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• 2021

폐 태양광전지 처리과정에서 은은 실리콘 및 알루미늄을 회수 위해 제거 하거나 처리하지않고 버리고있는 현실이다. 경제적 및 환경 보호 측면에 폐 태양광전지부터 은의 회수 중요하다고 판단함. 선행연구에서 1 mol/L 질산, 반응온도 70도, 반응시간 2h로 폐 태양광전지부터 Ag, Al을 침출 하었다. 이 침출액으로부터 은을 회수하기 위해 추출제 LIX63 및 탈거제 암모니아수 이용하였다. 추출 및 탈거 효율에 영향 미치는 조건: 침출액 pH, 금속이온 농도, 추출제의 농도, A/O ratio(수상 및 유기상 부피비율), 탈거제 농도 및 탁거과정에서 A/O ratio등을 변화시켜 조차하였다. McCabe-Thiele plots로부터 Ag(I)의 추출 및 탈거에 대한 이론 단수를 구하였으며, 향류 다단 모의 추출 시험을 통해 Ag(I)의 추출과 탈거에 대한 효율이 각각 >99.99%, 98.9% 이었다. Ag(I)와 Al(III)의 순도는 각각 99.998% 와 99.99%이었으며, 질산 침출액으로부터 Ag(I)및 Al(III)을 회수하기 위한 공정도를 제안하였다.

• 설비공학논문집
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• 제11권3호
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• pp.414-421
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• 1999

Falling film rectification involves simultaneous heat and mass transfer between vapor and liquid interface. In the present work, the adiabatic rectification process of ammonia-water vapor on the vertical plate was investigated. The continuity, momentum, energy and diffusion equations for the solution film and vapor mixture were formulated in integral forms and solved numerically. The model could predict the film thickness, the pressure gradient, and the mass transfer rate. The effects of Reynolds number and ammonia concentration of solution and vapor mixture, rectifier length, and the enhancement of mass transfer in each phases were investigated. The stripping of water in vapor mixture occurred new the entrance of ammonia solution, which imposed the proper size of an adiabatic rectifier. Rectifier efficiency increased as film Reynolds number increased and as vapor mixture Reynolds number decreased. The improvement of rectifier efficiency was significant with the enhancement of mass transfer in falling film.

• International Journal of Air-Conditioning and Refrigeration
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• 제8권2호
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• pp.69-79
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• 2000

Falling film rectification involves simultaneous heat and mass transfer between vapor and solution film. In the present work, the adiabatic rectification process of ammonia-water vapor by the falling solution film on the vertical plate was investigated. The continuity momentum, energy and diffusion equations for the solution film and the vapor mixture were formulated in integral forms and solved numerically, The model could predict the film thickness, the pressure gradient, and the mass transfer rate. The effects of Reynolds number and ammonia concentration of solution and vapor mixture, rectifier length, and the enhancement of mass transfer coefficient in each phases were investigated. The stripping of water in vapor mixture occurred near the entrance of ammonia solution, which imposed the proper size of an adiabatic rectifier. Rectifier efficiency increased as film Reynolds number increased and as vapor mixture Reynolds number decreased. The improvement of rectifier efficiency was significant with the enhancement of mass transfer coefficient in falling film.

• 한국막학회:학술대회논문집
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• 한국막학회 1999년도 Energy Saving Membrane Separtion Systems 에너지 절약형 막분리 시스템
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• pp.93-116
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• 1999

MF membrane element was specially designed for water purification and VSA process which can solve the fouling problem. Especially VSA process is developed for the SK Chemicals' asymmetric microfiltration hollow fiber membranes. In case of outside-to-in filtration process, MF membrane element showed the excellent flux stability caused by cleaning ability of VSA process . Simultaneous back-washing with VSA consideratbly enhances cleaning efficiency. From the result the possibility of the replacement of chemical coagulation and sand filtration process with newly developed VSA process was revealed.

• 한국막학회:학술대회논문집
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• 한국막학회 1999년도 The 7th Summer Workshop of the Membrane Society of Korea
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• pp.63-66
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• 1999

MF membrane element was specially designed for water purification and VSA process which can solve the fouling problem. Especially VSA process is developed for the SK Chemical's asymmetric microfiltration hollow fiber membranes. In case of outside-to-in filtration process, MF membrane element showed the excellent flux stability caused by cleaning ability of VSA process. Simultaneous back- washing with VSA considerably enhances cleaning efficiency. Form the result, the possibility of the replacement of chemical coagulation and sand filtration process with newly developed VSA process was revealed.

• 전기화학회지
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• 제22권3호
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• pp.128-137
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• 2019

리튬은 가장 가벼운 금속일 뿐만 아니라 낮은 환원전위(-3.04 V vs. SHE)와 큰 이론용량($3860mAh\;g^{-1}$)을 가지고 있어 차세대 음극 소재로 연구되고 있다. 리튬 금속을 전극으로 사용하는 리튬이차전지의 경우 전지의 효율과 에너지 밀도 극대화를 위해 얇은 두께의 리튬 전극이 필요하지만 기존의 리튬 박을 제조하는 물리적인 압연 방법으로는 일정수준 이하의 두께를 가지는 리튬 박을 제조하는데 한계가 있다. 본 연구에서는 물리적인 방법 대신 전해도금법으로 박막의 리튬을 전착하여 전해도금 시 사용되는 전해액의 종류와 전착 조건이 전착 특성 및 전착된 리튬의 전기화학 특성에 주는 영향을 확인하였다. 전착 전해액의 농도가 높을 수록 리튬 덴드라이트(dendrite) 형성 억제에 유리한 크고 둥근 형태의 리튬 입자를 형성하였으며 우수한 stripping 효율 (92.68%, 3M LiFSI in DME) 을 나타냈다. 전착 속도(전류 밀도)의 경우 속도 증가에 따라 리튬이 길이 방향으로 성장하여 길고 끝이 뾰족한 형태를 가지는 경향을 보였으며, 이로 인한 비표면적 증가로 전착된 리튬 전극의 stripping 효율이 감소(90.41%, 3M LiFSI in DME, $0.8mA\;cm^{-2}$)하는 경향을 확인하였다. 두 종류의 염과 용매를 조합하여 얻은 1.5M LiFSI + 1.5M LiTFSI in DME : DOL (1 : 1 vol%) (Du-Co) 전해액에서 전착된 리튬 전극이 가장 우수한 stripping 효율 (97.26%) 및 안정적인 가역성을 보였으며, 이는 염의 분해물로 구성된 전극 표면 피막의 Li-F 성분이 주는 안정성 향상과 피막의 유연성을 부여하는 DOL 효과에 기인한 것으로 추정된다.

• 한국표면공학회지
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• 제30권3호
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• pp.191-201
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• 1997

Non-passivated electrolytic tinplates withour conventinal chemical treatment self-oxidize in ambient atmosphere to from yellow stain on the outermost surface during the long-term storage. The degree of yellowness of the stain increased linerly with the oxide thickness due to the interfeefence color of the $SnO_2$ Even though the thickness of the oxide layer was very thin, less than 100$\AA$ , it exerts an undesirable influence on the can-making processes, particularly the stripping behavior after ironing. Investigations were carried out on the morphologies of the coating layer, the changes in oxide thickness during successive can-making processes and the averge friction coefficients with the different oxide thinkness. These oxide layers were broken up and distributed within the bulk tin coating during the ironing process. This redistribution of the oxide layer prvented smooth pressing-aside of the tin coating layer, resulting in an increase in the ironing friction coefficient. As the friction was increased, the residual stress along the can wall thinkness(i.e., the hoop stress) was also increased. Due to both the oxibe layer accumulation, which increased the friction coefficient, and the hoop stress, can stripping efficiency without roll-back is reduced.

• 반도체디스플레이기술학회지
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• 제16권2호
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• pp.55-60
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• 2017

The supercritical $CO_2$ (sc-$CO_2$) mixture and the sc-$CO_2$-based Photoresist(PR) stripping(SCPS) process were applied to the removal of the post etch/ash PR residue on aluminum patterned wafers and the results were observed by scanning of electron microscope(SEM). In the case of MDII wafers, the carbonized PR was able to be effectively removed without pre-stripping by oxygen plasma ashing by using sc-$CO_2$ mixture containing the optimum formulated additives at the proper pressure and temperature, and the same result was also able to be obtained in the case of HDII wafer. It was found that the efficiency of SCPS of ion implanted wafer improved as the temperature of SCPS was high, so a very large amount of MEA in the sc-$CO_2$ mixture could be reduced if the temperature could be increased at condition that a process permits, and the ion implanted photoresist(IIP) on the wafer was able to be removed completely without pre-treatment of plasma ashing by using the only 1 step SCPS process. By using SCPS process, PR polymers formed on sidewalls of metal conductive layers such as aluminum films, titanium and titanium nitride films by dry etching and ashing processes were removed effectively with the minimization of the corrosion of the metal conductive layers.