• The Journal of Engineering Geology
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• v.18 no.2
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• pp.153-158
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• 2008

Vibrating-wire strain gauges are widely used for the tunnel instrumentation because of the long-term stability at humid environments. Domestic strain gauges are mainly used in Korea due to the high cost of the foreign strain gauges. The credibility of the domestic strain gauges is not properly proven even though strain gauges produced by many different companies are available in the markets. The purpose of this paper is to investigate the credibility of the 2.5" strain gauges by using a laboratory compression test.

• The Journal of Engineering Geology
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• v.26 no.4
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• pp.583-591
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• 2016

Vibrating wire (VW) strain gauges are widely used for the evaluation of pipeline safety in extreme cold region. The development of VW strain gauges for the low temperature environment is necessary because of the high cost of gauges sold in developed countries. Thermistors embedded in the regular VW strain gauges and PT 100 sensors embedded in the gauges specially manufactured for this study have gone through credibility tests for temperature measurements. The use of PT 100 is recommended at low temperature environments because thermistors have low credibility at temperatures below $-15^{\circ}C$. Strain measurements using regular VW strain gauges also show low accuracies as temperature goes down. VW strain gauges manufactured using inconel give high credibility of strain measurements at low temperatures. More reliable VW strain gauges for the low temperature environment will be developed in the near future.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.97-100
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• 2001

This paper presents the characteristics of Ta-N thin-film strain gauges as high-temperature strain gauges, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(4∼16 %)N$_2$). These films were annealed for 1 hour in 2x10$\^$-6/ Torr vaccum furnace range 500∼1000$^{\circ}C$. The optimized conditions of Ta-N thin-film strain gauges were annealing condition(900$^{\circ}C$, 1 hr.) in 8% N$_2$ gas flow ratio deposition atmosphere. Under optimum conditions, the Ta-N thin-films for strain gauges is obtained a high resistivity, $\rho$=768.93 ${\mu}$Ω cm, a low temperature coefficient of resistance, TCR=-84 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=4.12.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1596-1598
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• 2002

This paper presents the characteristics of Ta-N thin-film strain gauges as high-temperature strain gauges, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-($4{\sim}16%$)$N_2$). These films were annealed for 1 hour in $2{\times}10^{-6}$ Torr vacuum furnace range $500{\sim}1000^{\circ}C$. The optimized conditions of Ta-N thin-film strain gauges were annealing condition($900^{\circ}C$, 1 hr.) in 8% $N_2$ gas flow ratio deposition atmosphere. Under optimum conditions, the Ta-N thin-films for strain gauges is obtained a high resistivity, ${\rho}$=768.93 ${\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR = -84 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF = 4.12.

• Electrical & Electronic Materials
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• v.10 no.10
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• pp.1022-1028
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• 1997

In this paper we present the construction details and output characteristics of a diaphragm-type pressure sensor with Cu-Ni(53:47) thin-film strain gauges. In order to improve the sensitivity and the temperature compensation two circumferential gauges are placed near the center of the diaphragm and two radial gauges are located near the edge. For all the gauges the relative change in resistance ΔR/R with pressure is of the order 10$^{-3}$ for the maximum pressure. The output is found to be linear over the entire pressure range(0-30kfg/cm$^2$)and the output sensitivity obtained is 1.6mV/V. The maximum nonlinearity observed in output characteristics is 0.35%FS for 5V excitation and the hysteresis is less than 0.1%FS.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.13 no.4
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• pp.75-82
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• 2014

A pin-type load-cell which uses shear-type strain gauges was developed to measure the tension of a wire in a winch. A finite element analysis was performed to determine the locations of the strain gauges. All of the shear-type strain gauges were attached onto parts that undergo regularly shear stress distributions. A Wheatstone bridge circuit was used to connect each of the gauges and to measure the strains. Linearity within the 5% error range was noted when testing the pin-type load-cell.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2002.11a
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• pp.345.2-345
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• 2002

This paper focuses on the formulation and validation of an automatic strategy for the selection of the locations and directions of strain gauges to capture at best the modal response of a blade in a series of modes. These locations and directions are selected to render the strain measurements as robust as possible with respect to random mispositioning of the gauges and gauge failures. (omitted)

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.97-100
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• 2001

This paper presents the characteristics of Ta-N thin-film strain gauges as high-temperature strain gauges, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(4~16%)$N_2$). These films were annealed for 1 hour in $2{\times}10^{-6}$ Torr vaccum furnace range $500\sim1000^{\circ}C$. The optimized conditions of Ta-N thin-film strain gauges were annealing condition($900^{\circ}C$, 1 hr.) in 8% $N_2$ gas flow ratio deposition atmosphere. Under optimum conditions, the Ta-N thin-films for strain gauges is obtained a high resistivity, $\rho=768.93$ ${\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-84 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=4.12.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.376-377
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• 2006

This paper presents the characteristics of Ta-N thin film strain gauges that are suitable for harsh environemts, which were deposited on thermally oxidized Si substrates by DC reactive magnetronsputtering in an argon-nitrogen atmosphere (Ar-$N_2$ (4 ~ 16 %)). These films were annealed for 1 hr in $2{\times}10^{-6}$ Torr in a vacuum furnace with temperatures that ranged from 500 - $1000^{\circ}C$. The optimized deposition and annealing conditions of the Ta-N thin film strain gauges were determined using 8 % $N_2$ gas flow ratio and annealing at $900^{\circ}C$ for 1 hr. Under optimum formation conditions, the Ta-N thin film strain gauges obtained a high electrical resistivity, ${\rho}\;=\;768.93\;{\mu}{\Omega}{\cdot}cm$, a low temperature coefficient of resistance, $TCR\;=\;-84\;ppm/^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=4.12. The fabricated Ta-N thin film strain gauges are expected to be used inmicromachined pressure sensors and load cells that are operable under harsh environments.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.5
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• pp.1019-1025
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• 2003

There are many kinds of seam trackers in the industrial welding field. We are proposed the contact seam tracking sensor applying strain gauges kind of contact sensor that mostly used in welding part now. For this seam tracking experiment, we made the strain gauges sensor by ourselves and tested how well the sensor tracks the seam. The experiment device consist of strain gauges sensor, amplifier circuit of strain gauges signal, saw wave generator, MOSFET power diving circuit and X-Y slide by moved DC motor. The tracking areas are X-Y planes(left, right, up and down) and the change of strain gauge resistance causes to move DC motor that connected to X-Y slide. As a result of experiment, we confirmed that the strain gauges sensor tracks a seam well, and X-Y slide DC motor was controlled by PWM control.