• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.233-233
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• 2010

Magnetic random access memory (MRAM), based on magnetic tunnel junction (MTJ) and CMOS, is a prominent candidate among prospective semiconductor memories because it can provide nonvolatility, fast access time, unlimited read/write endurance, low operating voltage and high storage density. The etching of MTJ stack with good properties is one of a key process for the realization of high density MRAM. In order to achieve high quality MTJ stack, the use of CoFeB and IrMn magnetic films as free layers was proposed. In this study, inductively coupled plasma reactive ion etching of CoFeB and IrMn thin films masked with Ti hard mask was investigated in a $Cl_2$/Ar gas mix. The etch rate of CoFeB and IrMn films were examined on varying $Cl_2$ gas concentration. As the $Cl_2$ gas increased, the etch rate monotonously decreased. The effective of etch parameters including coil rf power, dc-bais voltage, and gas pressure on the etch profile of CoFeB and IrMn thin film was explored, At high coil rf power, high dc-bais voltage, low gas pressure, the etching of CoFeB and IrMn displayed better etch profiles. Finally, the clean and vertical etch sidewall of CoFeB and IrMn free layers can be achieved by means of thin Ti hard mask in a $Cl_2$/Ar plasma at the optimized condition.

• Transactions of the Korean hydrogen and new energy society
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• v.31 no.6
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• pp.530-545
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• 2020

This paper reviews and summarizes the fuel-cell-related studies those have been recently published in major Korean Citation Index journals, aiming at analyzing the research trend in fuel cell technologies. Six major journals are selected for the literature survey; 57 papers are chosen for the detailed analysis through a screening examination on the total 1,040 papers published during between 2018 and 2020. Papers are classified into six technical categories, such as i) electrode, ii) electrolyte, iii) bipolar plate and stack, iv) fuel cell system, v) balance of plant, and vi) diagnosis-related studies, and summarized by the experts in the relevant area. Through this paper, we provide a comprehensive review on the recent trends and progress in fuel-cell-related research work in Korea.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.10
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• pp.1888-1894
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• 2011

In this study, large-current (75 - 400 A), high-voltage (500 - 1000 $V_{rms}$), reliable capacitors with capacitances (C) of 100 - 1000 nF were developed for energy storage facility applications. Mica was used as the dielectric of the capacitors. In order to form a parallel stack of a capacitor element, 50 ${\mu}m$ thick mica sheets with a size of $30mm{\times}35mm$ were used with lead foils for the plate lead type of mica capacitors (HCM-L), while the same sizes of mica sheets coated by Ag paste were employed with lead foils for the parallel plate terminal type (HCM-C). The developed capacitors exhibited well behaviored device characteristics which meet the requirements of the capacitors. The developed capacitors also showed excellent characteristics for thermal shock test. The stability characteristics of developed capacitors for large current stress was superior to those measured for the capacitors prepared recently by CDETm.

• IEMEK Journal of Embedded Systems and Applications
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• v.12 no.3
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• pp.139-147
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• 2017

In recent years, non-volatile memory express (NVMe), a new host controller interface standard, has been adapted to overcome performance bottlenecks caused by the acceleration of solid state drives (SSD). Recently, performance breakthrough cases over AHCI based SATA SSDs by adapting NVMe based PCI Express (PCIe) SSD to servers and PCs have been reported. Furthermore, replacing legacy eMMC-flash storage with NVMe based storage is also considered for next generation of mobile devices such as smartphones. The Linux kernel includes drivers for NVMe support, and as the kernel version increases, the implementation of the NVMe driver code has changed. However, mobile devices are often equipped with older versions of Android operating systems (OSes), where the newest features of NVMe drivers are not available. Therefore, different features of different NVMe driver implementations are not well evaluated on Android OSes. In this paper, we analyze the response time of the NVMe driver for various Linux kernel version.

• Transactions of the Society of Information Storage Systems
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• v.2 no.1
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• pp.32-37
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• 2006

The recording density of a hard disk drive(HDD) has been increased so rapidly that the storage capacity of a commercial HDD for the personal computer already reaches several hundred giga-bytes recently. Many technologies related to the HDD, such as servo, media, actuator dynamics, thermo and fluid dynamics, etc. must be developed together to realize higher recording density. Especially, airflow inside the HDD cavity has been concerned as the rotational speed of the disk increases. Typical problem due to the airflow is the off-track vibration of a head stack assembly(HSA) as the airflow collides with the E-block, suspensions, and sliders, i.e., the flow induced vibration(FIV). This problem is one of the most significant sources of the track mis-registration(TMR) so that it must be resolved. In this study, disk damper shape is modified to minimize the influence of airflow on the HSA. Modified disk dampers, which change the flow field of the inside cavity of a HDD, show good effects not only on the disk vibration but also on the off-track vibration of a HSA. Vibrations of E-block and slider have been measured with LDV and the airflow field inside the HDD cavity has been analyzed with commercial CFD program to verify these effects.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.167-167
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• 2011

Magnetic random access memory (MRAM) is one of the prospective semiconductor memories for next generation. It has the excellent features including nonvolatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack is composed of various magnetic materials, metals, and a tunneling barrier layer. For the successful realization of high density MRAM, the etching process of magnetic materials should be developed. Among various magnetic materials, FePt has been used for pinned layer of MTJ stack. The previous etch study of FePt magnetic thin films was carried out using $CH_4/O_2/NH_3$. It reported only the etch characteristics with respect to the variation of RF bias powers. In this study, the etch characteristics of FePt thin films have been investigated using an inductively coupled plasma reactive ion etcher in various etch chemistries containing $CH_4$/Ar and $CH_4/O_2/Ar$ gas mixes. TiN thin film was employed as a hard mask. FePt thin films are etched by varying the gas concentration. The etch characteristics have been investigated in terms of etch rate, etch selectivity and etch profile. Furthermore, x-ray photoelectron spectroscopy is applied to elucidate the etch mechanism of FePt thin films in $CH_4$/Ar and $CH_4/O_2/Ar$ chemistries.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.408-408
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• 2012

It is well known that magnetic random access memory (MRAM) is nonvolatile memory devices using ferromagnetic materials. MRAM has the merits such as fast access time, unlimited read/write endurance and nonvolatility. Although DRAM has many advantages containing high storage density, fast access time and low power consumption, it becomes volatile when the power is turned off. Owing to the attractive advantages of MRAM, MRAM is being spotlighted as an alternative device in the future. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal- oxide semiconductor (CMOS). MTJ stacks are composed of various magnetic materials. FePt thin films are used as a pinned layer of MTJ stack. Up to date, an inductively coupled plasma reactive ion etching (ICPRIE) method of MTJ stacks showed better results in terms of etch rate and etch profile than any other methods such as ion milling, chemical assisted ion etching (CAIE), reactive ion etching (RIE). In order to improve etch profiles without redepositon, a better etching process of MTJ stack needs to be developed by using different etch gases and etch parameters. In this research, influences of $O_2$ gas on the etching characteristics of FePt thin films were investigated. FePt thin films were etched using ICPRIE in $CH_4/O_2/Ar$ gas mix. The etch rate and the etch selectivity were investigated in various $O_2$ concentrations. The etch profiles were studied in varying etch parameters such as coil rf power, dc-bias voltage, and gas pressure. TiN was employed as a hard mask. For observation etch profiles, field emission scanning electron microscopy (FESEM) was used.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.387-387
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• 2013

Currently, the flash memory and the dynamic random access memory (DRAM) have been used in a variety of applications. However, the downsizing of devices and the increasing density of recording medias are now in progress. So there are many demands for development of new semiconductor memory for next generation. Magnetic random access memory (MRAM) is one of the prospective semiconductor memories with excellent features including non-volatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM is composed of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack consists of various magnetic materials, metals, and a tunneling barrier layer. Recently, MgO thin films have attracted a great attention as the prominent candidates for a tunneling barrier layer in the MTJ stack instead of the conventional Al2O3 films, because it has low Gibbs energy, low dielectric constant and high tunneling magnetoresistance value. For the successful etching of high density MRAM, the etching characteristics of MgO thin films as a tunneling barrier layer should be developed. In this study, the etch characteristics of MgO thin films have been investigated in various gas mixes using an inductively coupled plasma reactive ion etching (ICPRIE). The Cl2/Ar, CH3OH/Ar, and CH4/Ar gas mix were employed to find an optimized etching gas for MgO thin film etching. TiN thin films were employed as a hard mask to increase the etch selectivity. The etch rates were obtained using surface profilometer and etch profiles were observed by using the field emission scanning electron microscopy (FESEM).

• KIISE Transactions on Computing Practices
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• v.22 no.10
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• pp.497-503
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• 2016

Emerging next-generation storage technologies such as non-volatile memory will help eliminate almost all of the storage latency that has plagued previous storage devices. In conventional storage systems, the latency of slow storage devices dominates access latency; hence, software efficiency is not critical. With low-latency storage, software costs can quickly dominate memory latency. Hence, researchers have proposed the memory mapped file I/O to avoid the software overhead. Mapping a file into the user memory space enables users to access the file directly. Therefore, it is possible to avoid the complicated I/O stack. This minimizes the number of user/kernel mode switchings. In addition, there is no data copy between kernel and user areas. Despite of the benefits in the memory mapped file I/O, its overhead still needs to be addressed, as the existing mechanism for the memory mapped file I/O is designed for slow block devices. In this paper, we identify the overheads of the memory mapped file I/O via experiments.

• Journal of Korean Society for Atmospheric Environment
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• v.21 no.6
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• pp.573-583
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• 2005

Fugitive dust, which is emitted in the ambient air without first passing through a stack or duct designed to control flow, is frequently generated by means of wind erosion from storage yards at Pohang Steel Wokrs. The size distribution of fugitive dust is mostly in the range of coarse particulate which is deposited as soon as emitted and less harm to human health; however $20\%$ of fugitive dust contains PM 10 known as one of most harmful airborne pollutant. Consequently, effective control and reduction of fugitive dust is strongly requested by the local society, but it is not easy so far because the generation and dispersion of fugitive dust highly depends on meteorological conditions, and it being occurred for irregularity. This research presented a fugitive dust control system for each meteorological condition by providing statistical prediction data obtained from a statistical analysis on the probability of generating the threshold velocity at which the fugitive dust begins to occur, and the frequency occurring by season and by time of the wind direction that can generate atmospheric pollution when the dispersed dust spreads to adjacent residential areas. The research also built a fugitive dust detection system which monitors the weather conditions surrounding storage yards and the changes in air quality on a real-time basis and issues a warning message by identifying a situation where the fugitive dust disperses outside the site boundary line so that appropriate measures can be taken on a timely basis. Furthermore, in respect to the spraying of water to prevent the generation of fugitive dust from the storage piles at the storage yard, an advanced statistical meteorological analysis on the weather conditions in Pohang area and a case study of fugitive dust dispersion toward outside of working field during $2002\∼2003$ were carried out in order to decide an optimal water-spraying time and the number of spraying that can prevent the origin of fugitive dust emission. The results of this research are expected to create extremely significant effects in improving surrounding environment through actual reduction of the fugitive dust produced from the storage yard of Pohang Steel Works by providing a high-tech warning system capable of constantly monitoring the leakage of fugitive dust and water-spray guidance that can maximize the water-spraying effects.