• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.98.2-98.2
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• 2010

$CuInS_2$ thin films were synthesized by sulfurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furnace annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}$ [$cm^{-3}$], 312.502 [$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}$ [${\Omega}{\cdot}cm$], respectively.

• Journal of the Korean Institute of Gas
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• v.16 no.6
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• pp.17-22
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• 2012

In this study, characteristics of reforming process of Automotive LPG fuel using plasma reactor are investigated. Because plasma reformer technology has advantages of a fast start-up and wide fuel/oxidizer ratio of operation, and reactor size is smaller and more simple compared to typical combustor and catalytic reactor, plasma reforming is suitable to the on-board vehicle reformer. To evaluate the characteristics of the reforming process, parametric effect of $O_2$/C ratio, reactant flow rate and plasma power on the process were investigated. In the test of varying $O_2$/C ratio from partial oxidation stoichiometry to combustion stoichiometry, conversion of LPG was increased but selectivity of $H_2$ decreased. The optimum condition of $O_2$/C ratio for the highest $H_2$ yield was determined to be 0.8~0.9 for 20~50 lpm. The result can be a guide to map optimal condition of reforming process.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.20-22
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• 1999

The effect of dopant and stoichiometry on the physical and optical properties of $LiNbO_{3}$ were studied. We prepared three samples, undoped, MgO doped $LiNbO_{3}$ with congruent composition and near-stoichiometric $LiNbO_{3}$. Dielectric constant and transmittance in UV/VIS/IR light range were measured. The results showed that the features for high [Li]/[Nb] were similar to those for low [Li]/[Nb] but with high [Mg].

• Korean Journal of Materials Research
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• v.19 no.11
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• pp.596-600
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• 2009

Electrochemical deposition characteristics of CdSe nanorods were investigated for hybrid solar cell applications. CdSe nanorods were fabricated by electrochemical method in $CdSO_4$ and $H_2SeO_3$ dissolved aqueous solution using an anodic aluminum oxide (AAO) template. Uniformity of CdSe nanorods was dependent on the diameter and the height of holes in AAO. The current density, current mode, bath composition and temperature were controlled to obtain a 1:1 atomic composition of CdSe. CdSe nanorods deposited by direct-current method showed better uniformity compared to those deposited by purse-current and/or purse-reverse current methods due to the bottom-up filling characteristics. $H_2SeO_3$ concentration showed more significant effects on pH of solution and stoichiometry of deposits compared to that of $CdSO_4$. A 1:1 stoichiometry of uniform CdSe nanorods was obtained from 0.25M $CdSO_4-5$ mM $H_2SeO_3$ electrolytes with a direct current of 10 $mA/cm^2$ at room temperature. X-ray diffraction and electron diffraction pattern investigations demonstrate that CdSe nanorods are a uniform cubic CdSe crystal.

• Journal of the Korean Electrochemical Society
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• v.3 no.2
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• pp.72-75
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• 2000

For the purpose of developing the non-stoichiometric Zr-based Laves phase alloy with higher capacity and better performance for electrochemical application, extensive work has been carried out in KAIST. After careful alloy design of $ZrMn_2-based$ hydrogen storage alloys through varing their stoichiometry while susbstituting or adding some alloying elements, the $Zr-Ti-(Lh-V-Ni)_{2.2},\;Zr-Ti-(Mn-V-Cr-Ni)_{1.8\pm0.1}$ with high capacity and better performance was developed. Consequently the $Zr-Ti-(Mn-V-Ni)_{2.2}$ alloy has a high discharge capacity of 394mAh/g and shows a high rate capability equaling to that of commercialized $AB_5$ type alloys. On the other hand, in order to develop the hydrogen storage alloy with higher discharge capacity, the hypo-stoichiometric $Zr(Mn-V-Ni)_{2-\alpha}$ alloys substituted by Ti are under developing. As the result of competitive roles of Ti and $stocihiometry({\alpha})$, the discharge capacity of $Zr-Ti-(Mn-V-Cr-Ni)_{l.8\pm0.1}$ alloys is about 400mAh/g(410 mAh/g, which shows the highest level of performance in the Zr-based alloy developed. Our sequential endeavor is improving the shortcoming of Zr-based Laves phase alloy for commercialization, i.e., poor activation property and low rate capability, etc. It is therefore believed that the commercialization of Zr-based Laves phase hydrogen storage alloy for Ni-MH rechargeable battery is in near future.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.38 no.8
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• pp.687-693
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• 2014

In this study, the performance characteristics of a polymer electrolyte membrane fuel cell (PEMFC) were investigated at low operating temperatures under steady-state and dynamic conditions. The performance of the PEMFC was analyzed according to the external humidifying rate and air stoichiometry. The ohmic resistance was also investigated using EIS tests. At the operating temperature of $35^{\circ}C$, voltage fluctuation occurred to a greater degree compared to that at $45^{\circ}C$. Therefore, it was found that the air stoichiometry should be higher than 2.5 for the stable operation of the fuel cell. In addition, the relative humidity of the reactant gases should be higher than 60 to reduce the ohmic resistance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04c
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• pp.15-17
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• 2008

$CuInS_2$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furance annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}[cm^{-3}]$, 312.502[$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}[{\Omega}{\cdot}cm]$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.261-262
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• 2006

$CuInS_2$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furance annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1:1:2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}[cm^{-3}]$, 312.502 [$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}[{\Omega}{\cdot}cm]$, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.2
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• pp.79-82
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• 2003

GaN nanoparticles were synthesized by the pulsed laser deposition (PLD) process on $SiO_2$substrate after irradiating the surface of the GaN sintered pellet by the ArF (193 nm) excimer laser. At this moment Ar gas pressure of 100 Pa, 50 Pa, 10 Pa and 1 Pa were applied during the ablation process and laser power of 100 mJ and 200 mJ were also applied. The synthesized fan nanoparticles were characterized by XRD, SEM, TEM, XPS and optical absorption spectra. The synthesized GaN nanoparticles had the crystallite sizes of 20~30 nm, and besides, GaN nanoparticles synthesized under low Ar gas pressure compared to the others corresponded with stoichiometry, and the optical band edge of the GaN nanoparticles was blueshifted.

• Journal of The Korean Association For Science Education
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• v.18 no.1
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• pp.83-92
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• 1998

This study investigated the effect of systematicity and presentation type of an analog upon students' concept recall and application regarding stoichiometry that included limiting reagent. Systematicity was manipulated by varing the degree of explicit causal structure, and presentation type was in either verbal format or verbal/figurative format. The four types of the analog developed were studied by randomly assigned junior high school students (N=137). Prior to the treatment, the Group Assessment of Logical Thinking was administered and its score was used as a covariate. After the treatment, a research-made conception test was administered immediately and four weeks later. The ANCOVA results indicated that systematicity had a positive effect on immediate application regardless of presentation type. In the application problem of retention test, however, systematicity had no main effect but interaction with presentation type. These suggested that the systematic analog in verbal/figurative format most positively influence concept application. Educational implications are discussed.