• Journal of IKEEE
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• v.14 no.3
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• pp.250-255
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• 2010

The interleaved power management IC(PMIC) with DTMOS(Dynamic Threshold voltage MOSFET) switching device is proposed in this paper. The buck-boost converter used to provide the high output voltage and low output voltage for portable applications. Also we used the PWM(Pulse Width Modulation) control method for high power efficiency at high current level. DTMOS with low on-resistance is designed to decrease conduction loss. The interleaved PMIC to reduce output ripple. And step-down DC-DC converter in stand-by mode below 1mA is designed with LDO in order to achive high efficiency.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.18 no.6
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• pp.128-135
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• 2004

The author present a modified multi-loop algorithm including feedforward for controlling a 55kW step down chopper in the power supply of Maglev. The control law for the duty cycle consists of three terms. The first is the feedforward term. which compensates for variations in the input voltaga. The second term consists of the difference between the slowly moving inductor current and output current. The third term consists of proportional and integral terms involving the perturbation in the output voltage. This perturvation is derived by subtracting the desired output voltage from the actual output voltage. The proportional and integral action stabilizes the system and minimizes output voltage error. In order to verify the validity of the proposed multi-loop controller, simulation study was tried using Matlab simulink

• Journal of Advanced Marine Engineering and Technology
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• v.41 no.1
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• pp.76-82
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• 2017

Since the introduction of electronically controlled engines and electric propulsion ships, the need for an uninterruptible power supply for emergency power supply devices that use batteries has gained importance. The bidirectional converter in such emergency power supply devices is a crucial component. This paper proposes, a topology for an improved DC-DC bidirectional converter that is characterized by a high voltage conversion ratio and low voltage stress of switches. To confirm the performance of the converter, a computer simulation was executed with PSIM software. The conversion ratio of the proposed converter was found to be four times higher than the conventional boost converter in step-up mode and one-fourth that of the conventional buck converter in step-down mode, and the voltage stress of the switches was one-fourth of the high-side voltage. Moreover, the proposed converter was confirmed to be able to distribute equal currents between two interleaved modules without using any extra current-sharing control method because of the charge balance of its blocking capacitors.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.729-734
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• 2000

Recently, Very Large Scale Integrated (VLSI) circuit & deep-submicron bulk Complementary Metal Oxide Semiconductor(CMOS) devices require gate electrode materials such as metal-silicide, Titanium-silicide for gate oxides. Many previous authors have researched the improvement sub-micron gate oxide quality. However, few have reported on the electrical quality and reliability on the ultra thin gate oxide. In this paper, at first, I recommand a novel shallow trench isolation structure to suppress the corner metal-oxide semiconductor field-effect transistor(MOSFET) inherent to shallow trench isolation for sub 0.1${\mu}{\textrm}{m}$ gate oxide. Different from using normal LOCOS technology deep-submicron CMOS devices using novel Shallow Trench Isolation(STI) technology have a unique"inverse narrow-channel effects"-when the channel width of the devices is scaled down, their threshold voltage is shrunk instead of increased as for the contribution of the channel edge current to the total channel current as the channel width is reduced. Secondly, Titanium silicide process clarified that fluorine contamination caused by the gate sidewall etching inhibits the silicidation reaction and accelerates agglomeration. To overcome these problems, a novel Two-step Deposited silicide(TDS) process has been developed. The key point of this process is the deposition and subsequent removal of titanium before silicidation. Based on the research, It is found that novel STI structure by the SEM, in addition to thermally stable silicide process was achieved. We also obtained the decrease threshold voltage value of the channel edge. resulting in the better improvement of the narrow channel effect. low sheet resistance and stress, and high threshold voltage. Besides, sheet resistance and stress value, rms(root mean square) by AFM were observed. On the electrical characteristics, low leakage current and trap density at the Si/SiO$_2$were confirmed by the high threshold voltage sub 0.1${\mu}{\textrm}{m}$ gate oxide.

• Journal of Power Electronics
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• v.16 no.6
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• pp.2035-2044
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• 2016

In order to match the voltages between high voltage battery stacks and low voltage super-capacitors with a high conversion efficiency in hybrid energy sources electric vehicles (HESEVs), a high ratio bidirectional DC-DC converter with a synchronous rectification H-Bridge is proposed in this paper. The principles of high ratio step-down and step-up operations are analyzed. In terms of the bidirectional characteristic of the H-Bridge, the bidirectional synchronous rectification (SR) operation is presented without any extra hardware. Then the SR power switches can achieve zero voltage switching (ZVS) turn-on and turn-off during dead time, and the power conversion efficiency is improved compared to that of the diode rectification (DR) operation, as well as the utilization of power switches. Experimental results show that the proposed converter can operate bidirectionally in the wide ratio range of 3~10, when the low voltage continuously varies between 15V and 50V. The maximum efficiencies are 94.1% in the Buck mode, and 93.6% in the Boost mode. In addition, the corresponding largest efficiency variations between SR and DR operations are 4.8% and 3.4%. This converter is suitable for use as a power interface between the battery stacks and super-capacitors in HESEVs.

• Journal of IKEEE
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• v.13 no.4
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• pp.63-68
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• 2009

The power management integrated circuit(PMIC) for CCD image sensor is presented in this study. A CCD image sensor is very sensitive against temperature. The temperature, that is heat, is generally generated by the PMIC with low efficiency. Since the generated heat influences performance of CCD image sensor, it should be minimized by using a PMIC which has a high efficiency. In order to develop the PMIC with high efficiency, the input stage is designed with synchronous type step down DC-DC converter. The operating range of the converter is from 5V to 15V and the converter is controlled using PWM method. The PWM control circuit consists of a saw-tooth generator, a band-gap reference circuit, an error amplifier and a comparator circuit. The saw-tooth generator is designed with 1.2MHz oscillation frequency. The comparator is designed with the two stages OP Amp. And the error amplifier has 40dB DC gain and $77^{\circ}$ phase margin. The output of the step down converter is connected to input stage of the charge pump. The output of the charge pump is connected to input of the LDO which is the output stage of the PMIC. Finally, the PMIC, based on the PWM control circuit and the charge pump and the LDO, has output voltage of 15V, -7.5V, 3.3V and 5V. The PMIC is designed with a 0.35um process.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.967_968
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• 2009

For lighting application, high-power LED nowadays is driven at 350mA and a sensing resistor is used to provide feedback for LED-current regulation. This method adds an IR drop at the output branch, and limits power efficiency as LED current is large and keeps increasing. In this paper, a power efficient LED-current sensing circuit is proposed. The circuit does not use any sensing resistor but extracts LED-current information from the output capacitor of the driver. Controlling the brightness of LEDs requires a driver that provides a constant, regulated current. In one case, the converter may need to step down the input voltage, and, in another, it may need to boost up the output voltage. These situations often arise in applications with wide-ranging ""dirty"" input power sources, such as automotive systems. And, the driver topology must be able to generate a large enough output voltage to forward bias the LEDs. So, to provide this requirements, 13W prototype Buck-Boost Converter is used.

• Journal of Power Electronics
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• v.14 no.6
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• pp.1166-1177
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• 2014

A new type of topology with medium-frequency-transformer (MFT) isolation for medium voltage wind power generation systems is proposed in this paper. This type of converter is a high density power conversion system, with high performance features suitable for next generation wind power systems in either on-shore or off-shore applications. The proposed topology employs single-phase cascaded multi-level AC-AC converters on the grid side and three phase matrix converters on the generator side, which are interfaced by medium frequency transformers. This avoids DC-Link electrolytic capacitors and/or resonant L-C components in the power flow path thereby improving the power density and system reliability. Several configurations are given to fit different applications. The modulation and control strategy has been detailed. As two important part of the whole system, a novel single phase AC-AC converter topology with its reliable six-step switching technique and a novel symmetrical 11-segment modulation strategy for two stage matrix converter (TSMC) is proposed at the special situation of medium frequency chopping. The validity of the proposed concept has been verified by simulation results and experiment waveforms from a scaled down laboratory prototype.

• KIEE International Transactions on Electrophysics and Applications
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• v.3C no.1
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• pp.10-14
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• 2003

The occurrence of partial discharge (PD) in solid dielectrics is very harmful because it leads to the deterioration of insulation by electrical, chemical, and thermal reactions as a combined action of the discharged ions bombarding the surface and by the action of chemical compounds that are formed by the discharge. Consequently, if any defects are present in the solid insulation system, performance decreases until the system breaks down. Therefore, removing or suppressing the defect is very important. Voids are a typical defect in the solid insulation system and are very harmful because they deteriorate insulation. As a basic step, studying the properties of PD in voids is important because an accurate knowledge of these properties is required to estimate the deterioration of voids. In this paper, the correlation between the size of voids and internal PD is discussed as a function of the time of the applied voltage and its magnitude. Magnitude, repetition rate, average discharge power, and average discharge current of PD in specimens with large voids were found to be larger than the others in this experiment. The smaller specimens had voids when the magnitude and number of PDs were reduced.

• Journal of Power Electronics
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• v.17 no.3
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• pp.601-609
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• 2017

Gallium nitride (GaN) power switching devices are promising candidates for high switching frequency and high efficiency power conversion due to their fast switching, low on-state resistance, and high-temperature operation capability. In order to facilitate the use of these new devices better, it is required to investigate the device characteristics and performance in detail preferably by comparing with various conventional silicon (Si) devices. This paper presents a comprehensive study of GaN high electron mobility transistor (HEMT) based non-isolated point-of-load (POL) synchronous buck converter operating at 2.7 MHz with a high step-down ratio (24 V to 3.3 V). The characteristics and performance of GaN HEMT and three different Si devices are analytically investigated and the optimal operating point for GaN HEMT is discussed. Zero-voltage switching (ZVS) is implemented to minimize switching loss in high switching frequency operation. The prototype circuit and experimental data support the validity of analytical and simulation results.