• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2005년도 제36회 하계학술대회 논문집 A
• /
• pp.694-696
• /
• 2005

Although DC ground resistance is a good index of grounding performance for grounding electrodes, it does not reflect the grounding performance during transient state. Besides, impulse ground impedance, which is defined by a ratio of the peak value of transient ground potential rise to the peak value of impulse current, cannot be an absolute index due to its dependence on impulse current shape. In this paper, ground impedance characteristics of ground electrodes has been measured in frequency domain ranging from 1 Hz to hundreds of kHz. Equivalent circuit models and transfer function models of the ground rod have been identified from the measured values of ground impedance in frequency domain.

• 한국초전도학회:학술대회논문집
• /
• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
• /
• pp.218-221
• /
• 1999

Magnetization measurements have been carried out on grain aligned Hg-1223 with the applied field parallel to the c-axis. The temperature dependence of the lower critical field H$_{cl}$(T) was determined by considering the effect of the surface barrier on the magnetization. H$_{cl}$(T) have been determined .from magnetic hysteresis loops within the framework of the modified Kim-Anderson critical-state model, where the surface barrier and the lower critical field are explicitly considered. At high temperature, H$_{cl}$(T) is identified as H$_p$(T). This results are agreed with the theory of Bean-Livinston surface barriers.

• 한국시뮬레이션학회논문지
• /
• 제5권2호
• /
• pp.59-72
• /
• 1996

The purpose of this study is to make an improvement to the batch-means method, which is a procedure to construct a confidence interval(c.i.) for the steady-state process mean of a stationary simulation output process. In the batch-means method, the data in the output process are grouped into batches. The sequence of means of the data included in individual batches is called a batch-menas process and can be treated as an independently and identically distributed set of variables if each batch includes sufficiently large number of observations. The traditional batch-means method, therefore, uses a batch size as large as possible in order to. destroy the autocovariance remaining in the batch-means process. The c.i. prodedure developed and empirically tested in this study uses a small batch size which can be well fitted by a simple ARMA model, and then utilizes the dependence structure in the fitted model to correct for bias in the variance estimator of the sample mean.

• 한국재료학회지
• /
• 제29권12호
• /
• pp.753-756
• /
• 2019

Orthorhombic dysprosium manganite DyMnO₃ with single phase is synthesized using solid-state reaction technique and the crystal structure and dielectric properties as functions of temperature and frequency are investigated. Thermally activated dielectric relaxations are shown in the temperature dependence of the complex permittivity, and the respective peaks are found to be shifted to higher temperatures as the measuring frequency increases. In Arrhenius plots, activation energies of 0.32 and 0.24 eV for the high- and low-temperature relaxations are observed, respectively. Analysis of the relationship between the real and imaginary parts of the permittivity and the frequencies allows us to explain the dielectric behavior of DyMnO₃ ceramics by the universal dielectric response model. A separation of the intrinsic grain and grain boundary properties is achieved using an equivalent circuit model. The dielectric responses of this circuit are discerned by impedance spectroscopy study. The determined grain and grain boundary effects in the orthorhombic DyMnO₃ ceramics are responsible for the observed high- and low-temperature relaxations in the dielectric properties.

• 한국고분자학회:학술대회논문집
• /
• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
• /
• pp.167-167
• /
• 2006

Photo-/electroactive donor-acceptor (D-A) chromophores were synthesized and investigated for energy- and electron-transfer (ET/eT) properties, for which the chromophores are supramolecularly integrated by encapsulation with helical amylose, rendering the chromophores aggregation-free and rigidified along the helical axis and thus, a remarkably enhanced fluorescence intensity. Fluorescence quenching studies indicated that the helical encapsulation gives the ET/eT a clear D-A distance dependence unlike with the encapsulation-free counterparts, being reflected in their florescence decay profile. Another notable difference is that the helical supramolecule of the chromophores forms a perpendicularly oriented self-assembly. Transport behavior in the solid state will be also discussed.

• Applied Science and Convergence Technology
• /
• 제24권3호
• /
• pp.47-52
• /
• 2015

The correlation between admittance and dielectric spectroscopy of dielectric relaxation in lead scandium noibate, have been investigated. Lead scandium niobate, with composition $PbSc_{0.5}Nb_{0.5}O_3$, was prepared by conventional solid state synthesis. Conductance Y'(G), susceptance Y"(B) and capacitance C of lead scandium niobate as a function of frequency and temperature were measured. From the temperature-dependence of RLC circuit, insight into physical significance of the dielectric properties of lead scandium niobate is obtained. The relative strong frequency dependent of dielectric properties in lead scandium niobate is observed, and the phase transition occurred at a broad temperature region. Also, the value of critical exponent ${\gamma}$=1.6 showed on heating process. The long relaxation times part enlarged diffuse by conductivity effects with increasing temperature, and the ordering between $Sc^{3+}$ and $Nb^{5+}$ in PSN influences complex admittance and dielectric properties. Confirmed the typical characteristic of lead-type relaxor in the Raman spectra of lead scandium niobate and major ranges are between 400 and $900cm^{-1}$.

• 한국광물학회지
• /
• 제9권1호
• /
• pp.35-42
• /
• 1996

Polycrystalline ZrH2 in tetragonal crystal system has been compressed in a modified Bassett-type diamond anvil cell up to 36.0 GPa at room temperature. X-ray diffraction data did not indicate any phase transitions at the present pressure range. The pressure dependence of the a-axis, c-axis, c/a and molar volume of ZrH2 was determined at pressures up to 36.0 GPa. Assuming the pressure derivative of the bulk modulus (K0') to be 4.11 from an ultrasonic value on Zr, bulk modulus (K0) was determined to be 160Gpa by fitting the pressure-volume data to the Birch-Murnaghan equation of state. Same sample was heated at $500^{\circ}C$ at the pressure of 9.8 GPa in a modified Sung-type diamond anvil cell. Unloaded and quenched sample revealed that the original tetragonal structure transforms into a hexagonal structured phase with a zero-pressure molar volume change of ~115.5%.

• Archives of Pharmacal Research
• /
• 제14권2호
• /
• pp.118-123
• /
• 1991

Potentially dangerous nitrosamines have been shown to result from the reaction of sodium nitrogusside with several drugs under physiological conditions (pH 7.3 and $37^\circ{C})$. In each case the products were identical to those produced upon reaction with nitrous acid at much lower pH values. Reaction rates were shown to reflect a first order dependence on both amine and nitroprusside concentrations and to increase at higher pH values, approximately in proportion to concentrations of unprotonated amine. Fast reactions of sodium nitroprusside with reduced glutathione, cysteine, and ascorbate suppress but do not prevent the conversion of amines into N-nitrosamines. These results show sodium nitroprusside to be very potent nitrosating agent under physiological conditions and suggested nitrosamines may be formed during its normal pharmacological administration.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
• /
• pp.439-442
• /
• 2006

We evaluated a-Si:H TFTs fabricated on polyimide substrate (PI) at the highest temperature of $160^{\circ}C$ with uniaxial and tensile strain to imitate flexible display. With tensile strain, the threshold voltage of a-Si:H TFTs have positive shift due to extra dangling bond formation in a-Si:H layer. However, no significant degradation of the subthreshold swing and effective mobility with tensile strain of a-Si:H TFTs indicates the similar level of band tail state. The metal wire with the width of $10\;{\mu}m$ for connection on flexible substrate can sustain with curvature radius 2.5 cm.

• Journal of Information Display
• /
• 제10권1호
• /
• pp.28-32
• /
• 2009

The correlation between the optical performance of the reflective polarizer, which is a key optical component for the brightness enhancement of the liquid crystal display (LCD), and the configuration of optical sheets was investigated in a direct-lit CCFL (cold-cathode fluorescent lamp) backlight. The optical gain of the reflective polarizer, the polarization state of the light emitted from each film, and the loss factor for the polarization conversion process occurring in the lower part of the backlight were determined using a phenomenological approach for the polarization recycling process. The present study suggests that the correlation between the optical performance of the brightness enhancement films and the backlight configuration should be carefully considered in the optimization of the backlight structure.