• Proceedings of the Korean Society for Language and Information Conference
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• 1994.02a
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• pp.223-233
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• 1994

• Proceedings of the PSK Conference
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• 2000.04a
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• pp.48-52
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• 2000

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.3
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• pp.370-376
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• 2012

In this work, design considerations for high-performance silicon photodetector are thoroughly investi- gated. Besides the critical dimensions of device, guidelines for process architecture are suggested. Abiding by those criteria for improving both direct-current (DC) and alternating-current (AC) perfor- mances, a high-speed low-operation power silicon photodetector based on p-i-n structure for optical interconnect has been designed by device simulation. An $f_{-3dB}$ of 80 GHz at an operating voltage of 1 V was obtained.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.7.1-7.1
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• 2007

• The Korea Genome Conference
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• 2006.09a
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• pp.17-17
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• 2006

• The Bulletin of The Korean Astronomical Society
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• v.25 no.2
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• pp.33-33
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• 2000

• Proceedings of the Korean Society for Language and Information Conference
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• 1991.02a
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• pp.113-132
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• 1991

• Proceedings of the Korean Society for Rock Mechanics Conference
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• 2006.09a
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• pp.49-58
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• 2006

• Bulletin of the Korean Space Science Society
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• 2000.10a
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• pp.33-33
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• 2000

• Proceedings of the KSMRM Conference
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• 2001.11a
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• pp.121-129
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• 2001