Single Polysilicon EEPROM Cell and High-voltage Devices using a 0.25 μ Standard CMOS (0.25 μm 표준 CMOS 로직 공정을 이용한 Single Polysilicon EEPROM 셀 및 고전압소자)
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- Journal of the Korean Institute of Electrical and Electronic Material Engineers
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- v.19 no.11
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- pp.994-999
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- 2006