• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.90-93
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• 2004

In this work, we have used different techniques for the surface passivation: conventional thermal oxidation (CTO), rapid thermal oxidation (RTO), and plasma-enhanced chemical vapour deposition (PECVD). The surface passivation qualities of eight different single and combined double layer have been investigated both on the phosphorus non-diffused p-type FZ silicon and on phosphorus diffused emitter of 100 ${\Omega}/Sq$ and 40 ${\Omega}/Sq$. In the single layer, silicon dioxide $(SiO_2)$ passivates good on the emitter while silicon nitride (SiN) passivates better than on the non-diffused surface. In the double layers, CTO/SiN1 passivates very well both on non-diffused surface on the emitter. However, RTO/SiN1 and RTO/SiN2 stacks are more suitable for surface passivation in solar cells caused by a relatively good passivation qualities and the low optical reflection. Applying these stacks in solar cells we achieved 18.5 % and 18.8 % on 0.5 ${\Omega}$ cm FZ-Si with planar and textured front surface, respectively. The excellent open circuit voltage $(V_{oc})$ of 675.6 mV is obtained the planar cell with RTO/SiN stack.

• 신재생에너지
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• 제3권3호
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• pp.5-13
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• 2007

Stacks of solid oxide fuel cell with 1kW max power performance were designed on planar type employing anode-supported cells and metallic interconnects. The stacks composed of 3-cells, 8-cells, and 16-cells were fabricated and tested in serials by using anode-supported cells purchased from Indec, and sealants/interconnects prepared at RIST. In the performance test of the final 16-cells stack, OCV was recorded to be 16.7V. The peak power and the power density showed 1 kW, $0.77W/cm^2$ at $820^{\circ}C$, respectively. In addition, the long-term degradation rate of the power exhibited 2.25 % during 500h at $750^{\circ}C$.

• 한국대기환경학회지
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• 제23권6호
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• pp.666-674
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• 2007

In this study, sampling and analysis was carried out for 13 compounds, in order to investigate the odorous compound emissions from landfill stacks and surrounding ambient air. These results revealed that concentration of hydrogen sulfide was $0.13{\sim}0.66\;ppb$ in the ambient air. Also, concentrations of hydrogen sulfide ($151{\sim}358\;ppm$) were the highest value in odorous sulfur compounds from landfill stacks. In case of VOC, toluene was obtained the highest out of volatile organic compounds. It was found that the concentrations of hydrogen sulfide near the landfill was higher than that inside city such as Seoul although it was located in a rural area. The result was due to the effect of hydrogen sulfide emitted from landfill stacks.

• 한국초전도ㆍ저온공학회논문지
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• 제17권1호
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• pp.14-16
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• 2015

Due to the considerable development of the technology of second generation high-temperature superconductors and a significant improvement in their mechanical and transport properties in the last few years it is possible to use HTS tapes in the magnetic levitation systems. The advantages of tapes on a metal substrate as compared with bulk YBCO material primarily in the strength, and the possibility of optimizing the convenience of manufacturing elements of levitation systems. In the present report presents the results of the magnetic levitation force measurements between the stack of HTS tapes containing $n=2{\div}200$ of tapes $12mm{\times}12mm$ and NdFeB permanent magnet in the FC and ZFC regimes. It was found a non- linear dependence of the levitation force from the height of the array of stack in both modes: linear growth at small thickness gives way to flattening and constant at large number of tapes in the stack. Established that the levitation force of stacks comparable to that of bulk samples. The numerical calculations using finite element method showed that without the screening of the applied field the levitation force of the bulk superconductor and the layered superconductor stack with a critical current of tapes increased by the filling factor is exactly the same, and taking into account the screening force slightly different.

• Carbon letters
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• 제23권
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• pp.1-8
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• 2017

Polycrystalline diamond (PCD) tools possessing high hardness and abrasive wear resistance are particularly suited for drilling of carbon fiber reinforced plastic (CFRP) composites, where tool life and consistent hole quality are important. While PCD presents superior performance when drilling CFRP, it is unclear how it performs when drilling multi-stack materials such as CFRP-titanium (Ti) stacks. This comparative study aims to investigate drilling of a Ti plate stacked on a CFRP panel when using PCD tools. The first sequence of the drilling experiments was to drill 20 holes in CFRP only. CFRP-Ti stacks were then drilled for the next 20 holes with the same drill bit. CFRP holes and CFRP-Ti stack holes were evaluated in terms of machined hole quality. The main tool wear mechanism of PCD drills is micro-fractures that occur when machining the Ti plate of the stack. Tool wear increases the instability and the operation temperature when machining the Ti plate. This results in high drilling forces, large hole diameter errors, high surface roughness, wider CFRP exit thermal damage, and taller exit Ti burrs.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.188.1-188.1
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• 2015

For present investigation Fe/MgO/Fe/Co multilayer stack is grown on Si substrate using e-beam evaporation in ultrahigh vacuum. This stack is irradiated perpendicularly by 120 MeV $Ag^{8+}$ at different fluences ranging from $1{\times}10^{11}$ to $1{\times}10^{13}ions/cm^2$ in high vacuum using 15UD Pelletron Accelerator at Inter University Accelerator Centre, New Delhi. Magnetic measurements carried out on pre and post irradiated stacks show significant changes in the shape of perpendicular hysteresis which is relevant with previous observation of re-orientation of magnetic moment along the direction of ion trajectory. However increase in plane squareness may be due to the modification of interface structure of stacks. X-ray reflectivity measurements show onset of interface roughness and interface mixing. X-ray diffraction measurements carried out using synchrotron radiation shows amorphous nature of MgO and Co layer in the stack. Peak corresponding body centered Fe [JCPDS-06-0696] is observed in X-ray diffraction pattern of pre and post irradiated stacks. Peak broadening shows granular nature of Fe layer. Estimated crystallite size is $22{\pm}1nm$ for pre-irradiated stack. Crystallite size first increases with irradiation then decreases. Structural quality of these stacks was further studied using transmission electron microscopic measurements. Thickness from these measurements are 54, 36, 23, 58 and 3 nm respectively for MgO, Fe, MgO, Fe+Co and Au layers in the stack. These measurements envisage poor crystallinity of different layers. Interfaces are not clear which indicate mixing at interface. With increase fluence mixing and diffusion was increased in the stack. X-ray absorption spectroscopic measurements carried out on these stacks show changes of Fe valence state after irradiation along with change of O(2p)-metal (3d) hybridized state. Valence state change predicts oxide formation at interface which causes enhanced in-plane magnetization.

• 전력전자학회지
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• 제9권6호
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• pp.39-44
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• 2004

• 한국방사성폐기물학회:학술대회논문집
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• 한국방사성폐기물학회 2011년도 춘계학술논문요약집
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• pp.383-384
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• 2011

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2002년도 학술대회 논문집
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• pp.368-370
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• 2002

We present current limiting properties of 1.2kV/70A superconducting fault current limiter based on YBCO thin films. This is consisted of 6 wafers (3 parallel $\times$ 2 serial connection) with 4 inch-diameter YBCO thin film. The quench current Iq of the switching elements vary between 33.9 and 35.6 A. Within the difference of 0.5 A in the sum of quench current Iq in two stacks, the serial connection of the stacks showed the simultaneous quench behavior in applied power of 1.2 kV/70A.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.141-144
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• 2002

We present current limiting properties of 1.2kV/70A superconducting fault current limiter based on YBCO thin films. This is consisted of 6 wafers (3 parallel ${\times}$ 2 serial connection) with 4 inch-diameter YBCO thin film. The quench current Iq of the switching elements vary between 33.9 and 35.6 A. Within the difference of 0.5 A in the sum of quench current Iq in two stacks, the serial connection of the stacks showed the simultaneous quench behavior in applied power of 1.2 kV /70 A.