• Proceedings of the Korean Society For Composite Materials Conference
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• 2004.04a
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• pp.210-213
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• 2004

We study the fracture behavior of the lumbar No.4 and No.5 vertebra subjected to posteroanterior (PA) forces, a three dimensional finite element method (FEM). The lumbar spine was modeled 3-dimensionally using commercial software based on the principle of convert stacked two dimensional CT scan images into three dimensional shapes. Determination of the boundary conditions corresponding to actual surgical conditions was not easy, so that the simplified spine beam analyses were performed. The results were used in three dimensional finite element (FE) analysis. This FE analysis, indicates that the fracture loads of the lumbar No.4 and No.5 vertebra are respectively 1550 N and 1500 N. These fracture loads are for static loading, but in actual conditions the load on the lumbar spine varies dynamically. We found that the fracture load of lumbar No.4 vertebra is larger than that of lumbar No.5 vertebra, as a result of the total stress difference by the moment.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.7
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• pp.667-678
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• 2002

In this paper, a new radiating structure with a multi-layered two-dimensional metallic disk array was proposed for shaping the flat-topped element pattern. It is an infinite periodic planar array structure with metallic disks finitely stacked above the radiating circular waveguide apertures. The theoretical analysis was in detail performed using rigid full-wave analysis, and was based on modal representations for the fields in the partial regions of the array structure and for the currents on the metallic disks. The final system of linear algebraic equations was derived using the orthogonal property of vector wave functions, mode-matching method, boundary conditions and Galerkin's method, and also their unknown modal coefficients needed for calculation of the array characteristics were determined by Gauss elimination method. The application of the algorithm was demonstrated in an array design for shaping the flat-topped element patterns of $\pm$20$^{\circ}$ beam width in Ka-band. The optimal design parameters normalized by a wavelength for general applications are presented, which are obtained through optimization process on the basis of simulation and design experience. A Ka-band experimental breadboard with symmetric nineteen elements was fabricated to compare simulation results with experimental results. The metallic disks array structure stacked above the radiating circular waveguide apertures was realized using ion-beam deposition method on thin polymer films. It was shown that the calculated and measured element patterns of the breadboard were in very close agreement within the beam scanning range. The result analysis for side lobe and grating lobe was done, and also a blindness phenomenon was discussed, which may cause by multi-layered metallic disk structure at the broadside. Input VSWR of the breadboard was less than 1.14, and its gains measured at 29.0 GHz. 29.5 GHz and 30 GHz were 10.2 dB, 10.0 dB and 10.7 dB, respectively. The experimental and simulation results showed that the proposed multi-layered metallic disk array structure could shape the efficient flat-topped element pattern.

• Journal of the Korean Vacuum Society
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• v.18 no.5
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• pp.352-357
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• 2009

The InAs multi-quantum dots (MQDs) solar cell and InGaAs multi-quantum wells (MQWs) solar cell to cover 1.1 eV and 1.3 eV were designed by 1D poisson, respectively. The MQDs and MQWs of 5, 10, 15 layers were grown by molecular beam epitaxy. The photo luminescence results showed that the 5 period stacked MQDs have the highest intensity at around 1.1 eV with 57.6 meV full width at half maximum (FWHM). Also we can observe 10 period stacked MQWs peak position which has highest intensity at 1.31 eV with 12.37 meV FWHM. The density and size of QDs were observed by reflection high energy electron diffraction pattern and atomic force microscope. Futhermore, AlGaAs/GaAs sandwiched tunnel junctions were modified according to the width of GaAs layer on p-type GaAs substrates. The structures with GaAs width of 30 nm and 50 nm have backward diode characteristics. In contrast, tunnel diode characteristics were observed in the 20 nm of that of sample.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.258-258
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• 2016

최근 디스플레이 산업의 발전에 따라 고성능 디스플레이가 요구되며, 디스플레이의 백플레인 (backplane) TFT (thin film transistor) 구동속도를 증가시키기 위한 연구가 활발히 진행되고 있다. 트랜지스터의 구동속도를 증가시키기 위해 높은 이동도는 중요한 요소 중 하나이다. 그러나, 기존 백플레인 TFT에 주로 사용된 amorphous silicon (a-Si)은 대면적화가 용이하며 가격이 저렴하지만, 이동도가 낮다는 (< $1cm2/V{\cdot}s$) 단점이 있다. 따라서 전기적 특성이 우수한 산화물 반도체가 기존의 a-Si의 대체 물질로써 각광받고 있다. 산화물 반도체는 비정질 상태임에도 불구하고 a-Si에 비해 이동도 (> $10cm2/V{\cdot}s$)가 높고, 가시광 영역에서 투명하며 저온에서 공정이 가능하다는 장점이 있다. 하지만, 차세대 디스플레이 백플레인에서는 더 높은 이동도 (> $30cm2/V{\cdot}s$)를 가지는 TFT가 요구된다. 따라서, 본 연구에서는 차세대 디스플레이에서 요구되는 높은 이동도를 갖는 TFT를 제작하기 위하여, amorphous In-Ga-Zn-O (a-IGZO) 채널하부에 화학적으로 안정하고 전도성이 뛰어난 SnO2 채널을 얇게 형성하여 TFT를 제작하였다. 표준 RCA 세정을 통하여 p-type Si 기판을 세정한 후, 열산화 공정을 거쳐서 두께 100 nm의 SiO2 게이트 절연막을 형성하였다. 본 연구에서 제안된 적층된 채널을 형성하기 위하여 5 nm 두계의 SnO2 층을 RF 스퍼터를 이용하여 증착하였으며, 순차적으로 a-IGZO 층을 65 nm의 두께로 증착하였다. 그 후, 소스/드레인 영역은 e-beam evaporator를 이용하여 Ti와 Al을 각각 5 nm와 120 nm의 두께로 증착하였다. 후속 열처리는 퍼니스로 N2 분위기에서 $600^{\circ}C$의 온도로 30 분 동안 실시하였다. 제작된 소자에 대하여 TFT의 전달 및 출력 특성을 비교한 결과, SnO2 층을 형성한 TFT에서 더 뛰어난 전달 및 출력 특성을 나타내었으며 이동도는 $8.7cm2/V{\cdot}s$에서 $70cm2/V{\cdot}s$로 크게 향상되는 것을 확인하였다. 결과적으로, 채널층 하부에 SnO2 층을 형성하는 방법은 추후 높은 이동도를 요구하는 디스플레이 백플레인 TFT 제작에 적용이 가능할 것으로 기대된다.

• Journal of Institute of Control, Robotics and Systems
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• v.18 no.10
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• pp.970-976
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• 2012

In this paper, a single LRF has been used to produce a 3D map for the mobile robot navigation. The 2D laser scanners are used for mobile robots navigation, where the laser scanner is applied to detect a certain level of area by the straight beam. Therefore it is limited to the usages of 2D obstacle detection and avoidance. In this research, it is designed to complement a mobile robot system to move up and down a single LRF along the yaw axis. During the up and down motion, the 2D data are stacked and manipulated to build a 3D map. Often a single LRF data are mixed with Gaussian and impulse noises. The impulse noises are removed out by the hybrid median filter designed in this research. The 2D data which are improved by deleting the impulse noises are layered to build the 3D map. Removing impulse noises while preserving the boundary is a main advantages of the hybrid median filter which has been used widely to improve the quality of images. The effectiveness of this hybrid median filter for rejecting the impulse noises has been verified through the real experiments. The performance of the hybrid median filter is evaluated in terms of PSNR (Peak Signal to Noise Ratio) and the processing time.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.7
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• pp.81-88
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• 2004

In case of mechanical down tilting, a horizontal pattern is distorted and beam width widens whenincreasing tilt angle, which causes an expansion of hand off region and burden base station equipment. In contrast, electrical down tilting has advantage that horizontal HPBW is kept constant with down tilting. In this paper, based on a phased array technology, dual polarized base station antenna with electrical down tilting was developed at 800MHz band. The antenna has down tilting range of 0$^{\circ}$ to 14$^{\circ}$, and 15㏈i gain. We use stacked microstrip patch as a radiated element and apply balanced feed technique to improve isolation between ports and discrimination of cross polarization. The effect of electrical down tilting was verified by field test.

• Journal of the Korea Institute of Building Construction
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• v.22 no.2
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• pp.161-169
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• 2022

The government [3] specifies steel pipe scaffolding as conventional scaffolding and is promoting the installation of system scaffolding, an integrated work platform, and avoidance of the use of steel pipe scaffolding as much as possible. However, in places where equipment cannot enter, such as power plants and plant sites, places the structure is complex, and places where scaffolding cannot be stacked on the ground, there is no choice but to install steel pipe scaffolding. When installing steel pipe scaffolding on an H-beam structure at a high place, the performance of the steel frame clamp is very important in order to form a work space which workers can work safely. In this study, the displacement magnitude and tensile load of members in each installation direction of the clamp for steel frame were verified through performance tests and structural analysis modeling. As a result, it was confirmed that the performance for each installation direction satisfies the safety certification standard tensile load of 10,000N. Although the performance value is satisfactory, deformation of the attachment pressing bolt was verified and was confirmed to have minimal deformation. Thus, to ensure the load is properly to the attachment body, the clamp for a steel frame must be installed in the direction in which the load is transmitted.

• The Journal of Korean Society for Radiation Therapy
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• v.28 no.1
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• pp.35-46
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• 2016

Purpose : BoS(Base of Skull) Frame, the fixation tool which is used for the proton of brain cancer increases the lateral penumbra by increasing the airgap (the distance between patient and beam jet), due to the collision of the beam of the posterior oblique direction. Thus, we manufactured the fixation tool per se for improving the limits of BoS frame, and we'd like to evaluate the utility of the manufactured fixation tool throughout this study. Materials and Methods : We've selected the 3 patients of brain cancer who have received the proton therapy from our hospital, and also selected the 6 beam angles; for this, we've selected the beam angle of the posterior oblique direction. We' ve measured the planned BoS frame and the distance of Snout for each beam which are planned for the treatment of the patient using the BoS frame. After this, we've proceeded with the set-up that is above the location which was recommended by the manufacturer of the BoS frame, at the same beam angle of the same patient, by using our in-house Bos frame fixation tool. The set-up was above 21 cm toward the superior direction, compared to the situation when the BoS frame was only used with the basic couch. After that, we've stacked the snout to the BoS frame as much as possible, and measured the distance of snout. We've also measured the airgap, based on the gap of that snout distance; and we've proceeded the normalization based on each dose (100% of each dose), after that, we've conducted the comparative analysis of lateral penumbra. Moreover, we've established the treatment plan according to the changed airgap which has been transformed to the Raystation 5.0 proton therapy planning system, and we've conducted the comparative analysis of DVH(Dose Volume Histogram). Results : When comparing the result before using the in-house Bos frame fixation tool which was manufactured for each beam angle with the result after using the fixation tool, we could figure out that airgap than when not used in accordance with the use of the in-house Bos frame fixation tool was reduced by 5.4 cm ~ 15.4 cm, respectively angle. The reduced snout distance means the airgap. Lateral Penumbra could reduce left, right, 0.1 cm ~ 0.4 cm by an angle in accordance with decreasing the airgap while using each beam angle in-house Bos frame fixation tool. Due to the reduced lateral penumbra, Lt.eyeball, Lt.lens, Lt. hippocampus, Lt. cochlea, Rt. eyeball, Rt. lens, Rt. cochlea, Rt. hippocampus, stem that can be seen that the dose is decreased by 0 CGE ~ 4.4 CGE. Conclusion : It was possible to reduced the airgap by using our in-house Bos frame fixation tool for the proton therapy; as a result, it was possible to figure out that the lateral penumbra reduced. Moreover, it was also possible to check through the comparative analysis of the treatment plan that when we reduce the lateral penumbra, the reduction of the unnecessary irradiation for the normal tissues. Therefore, Using the posterior oblique the Brain cancer proton therapy should be preceded by decreasing the airgap, by using our in-house Bos frame fixation tool; also, the continuous efforts for reducing the airgap as much as possible for the proton therapy of other area will be necessary as well.

• Journal of the Korean Vacuum Society
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• v.15 no.2
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• pp.223-230
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• 2006

We have investigated the characteristics of hydrogen (H) plasma treated quantum dot infrared photodetectors (QDIPs). The structure used in this study consists of 3 stacked, self assembled $In_{0.5}Ga_{0.5}As/GaAs$ QD layer separated by GaAs barrier layers that were grown by molecular beam epitaxy. Optical characteristics of QDIPs, such as photoluminescence (PL) spectra and photocurrent spectra, have been studied and compared with each other for the as grown and H plasma treated QDIPs. H plasma treatment, resulted in the splitting of PL peak, which can be attributed to the redistribution of the size of QDs. The activation energies estimated from the temperature dependence of integrated PL intensity for as grown and H plasma treated QDIPs are found to be in good agreement with those determined from corresponding peaks of photocurrent spectra. It is also noted that photocurrent is detected up to 130 K for the H plasma treated QDIP, suggesting the future possibility for the development of infrared photodetectors with high temperature operation.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.293-294
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• 2011

It is known that semiconductor quantum-dot (QD) heterostructures have superior zero-dimensional quantum confinement, and they have been successfully applied to semiconductor laser diodes (QDLDs) for optical communication and infrared photodetectors (QDIPs) for thermal images [1]. The self-assembled QDs are normally formed at Stranski-Krastanov (S-K) growth mode utilizing the accumulated strain due to lattice-mismatch existing at heterointerfaces between QDs and cap layers. In order to increase the areal density and the number of stacks of QDs, recently, sub-monolayer (SML)-thick QDs (SQDs) with reduced strain were tried by equivalent thicknesses thinner than a wetting layer (WL) existing in conventional QDs (CQDs) by S-K mode. Despite that it is very different from CQDs with a well-defined WL, the SQD structure has been successfully applied to QDIP[2]. In this study, optical characteristics are investigated by using photoluminescence (PL) spectra taken from self-assembled InAs/GaAs QDs whose coverage are changing from submonolayer to a few monolayers. The QD structures were grown by using molecular beam epitaxy (MBE) on semi-insulating GaAs (100) substrates, and formed at a substrate temperature of 480$^{\circ}C$ followed by covering GaAs cap layer at 590$^{\circ}C$. We prepared six 10-period-stacked QD samples with different InAs coverages and thicknesses of GaAs spacer layers. In the QD coverage below WL thickness (~1.7 ML), the majority of SQDs with no WL coexisted with a small amount of CQDs with a WL, and multi-peak spectra changed to a single peak profile. A transition from SQDs to CQDs was found before and after a WL formation, and the sublevel of SQDs peaking at (1.32${\pm}$0.1) eV was much closer to the GaAs bandedge than that of CQDs (~1.2 eV). These revealed that QDs with no WL could be formed by near-ML coverage in InAs/GaAs system, and single-mode SQDs could be achieved by 1.5 ML just below WL that a strain field was entirely uniform.