• 한국전산구조공학회:학술대회논문집
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• 한국전산구조공학회 2002년도 가을 학술발표회 논문집
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• pp.591-598
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• 2002

The interface element method for non-matching FEM meshes is extended using stabilized nodal integration. Two non-matching meshes are shown to be joined together compatibly, with the aid of the moving least square approximation. Using stabilized nodal integration, the interface element method is able to satisfy the patch test, which guarantees the convergence of the method.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.309-309
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• 2011

There have been large research activities on the high quality oxide films for the realization oxide based electronics. However, the interface interdiffusion prohibits achieving high quality oxide films, when the oxide films are grown on non-oxide substrates. In the case of Si substrates, there exist lattice mismatch and interface interdiffusion when oxide films deposited on direct Si surface. In this presentation, we report the interface characteristics of yttria-stabilized zirconia films grown on silicon substrates. From x-ray reflectivity analysis we found that the film thickness and interface roughness decreased as the growth temperature increased, indicating that the growth mechanism varies and the chemical reaction is limited to the interface as the growth condition varies. Furthermore, the packing density of the film increased as the growth temperature increased and the film thickness decreased. X-ray photoelectron spectroscopy analysis of very thin films revealed that the amount of chemical shift increased as the growth temperature increased. Intriguingly, the direction of the chemical shift of Zr was opposite to that of Si due to the second nearest neighbor interaction.

• E2M - 전기 전자와 첨단 소재
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• 제16권9호
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• pp.63.2-64
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• 2003

Epitaxial yttrium-stabilized HfO$_2$ thin films were deposited on p-type (100) Si substrates by pulsed laser deposition at a relatively lower substrate temperature of 550. Transmission electron microscopy observation revealed a fixed orientation relationship between the epitaxial film and Si; that is, (100)Si.(100)HfO$_2$ and [001]Si/[001]HfO$_2$. The film/Si interface is not atomically flat, suggesting possible interfacial reaction and diffusion, X-ray photoelectron spectrum analysis also revealed the interfacial reaction and diffusion evidenced by Hf silicate and Hf-Si bond formation at the interface. The epitaxial growth of the yttrium stabilized HfO$_2$ thin film on bare Si is via a direct growth mechanism without involoving the reaction between Hf atoms and SiO$_2$ layer. High-frequency capacitance-voltage measurement on an as-grown 40-A yttrium-stabilized HfO$_2$ epitaxial film yielded an dielectric constant of about 14 and equivalent oxide thickness to SiO$_2$ of 12 A. The leakage current density is 7.0${\times}$ 10e-2 A/$\textrm{cm}^2$ at 1V gate bias voltage.

• 대한화장품학회지
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• 제36권1호
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• pp.1-16
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• 2010

본 총설에서는 나노미터 크기의 고체 입자가 오일-물 계면에 흡착됨으로써 안정화된 에멀젼의 제조와 성질에 대하여 기술하였다. 이렇게 제조된 에멀젼을 Pickering 에멀젼이라 하며 이 에멀젼을 계면활성제로 안정화된 일반적인 에멀젼과 비교하였다. Pickering 에멀젼의 독특한 성질은 입자의 계면 흡착 에너지가 큰 점에 기인하며 일반 에멀젼과 주요한 차이점은 고체 입자가 비가역적으로 계면에 흡착한다는 사실이다. Pickering 에멀젼의 전상은 w/o (water-in-oil) 타입에서 o/w (oil-in-water)로 수상의 분율이 증가함에 따라 발생한다. 친수성의 입자는 o/w 에멀젼을 형성하는 경향을 보이고 친유성 입자는 w/o 에멀젼을 형성하는 경향을 보이며 이는 고체 입자의 오일-물 계면에서의 접촉각에 따른다. Pickering 에멀젼의 안정성은 많은 부분에서 일반적인 에멀젼과는 다른 거동을 보였다. 저자는 또한 Pickering 에멀젼의 화장품 응용 가능성에 대해서도 논의하였다.

• 접착 및 계면
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• 제14권3호
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• pp.146-159
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• 2013

본 연구에서는 $350^{\circ}C$에서 4 min 이내로 빠르게 등온 안정화공정을 통해 얻어진 레이온직물의 화학조성, 물리적 특성, X-선 회절 패턴, 열안정성 그리고 직물 형상에 미치는 초음파세척 및 화학전처리의 영향을 조사하였다. 안정화공정 동안 레이온직물에서 발생하는 중량감소와 열수축을 줄이고 안정화반응을 촉진시키기 위하여 안정화공정 전에 레이온직물을 먼저 초음파 세척하고 $NH_4Cl$, $Na_3PO_4$, $H_3PO_4$ 및 $ZnCl_2$로 화학전처리 공정을 수행하였다. 결과는 초음파세척 및 화학전처리가 안정화된 레이온직물의 중량감소, 열수축, 미세구조 변화, 탄소함량, 열안정성, 및 직물 형상에 영향을 주었으며, 사용한 안정화시간과 화학전처리제의 종류에 의존하였다.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회A
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• pp.442-447
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• 2008

This paper presents a new approach to simulate fluid-solid interaction problems involving non-matching interfaces. The coupling between fluid and solid domains with dissimilar finite element meshes consisting of 4-node quadrilateral elements is achieved by using the interface element method (IEM). Conditions of compatibility between fluid and solid meshes are satisfied exactly by introducing the interface elements defined on interfacing regions. Importantly, a consistent transfer of loads through matching interface element meshes guarantees the present method to be an efficient approach of the solution strategy to fluid-solid interaction problems. An arbitrary Lagrangian-Eulerian (ALE) description is adopted for the fluid domain, while for the solid domain an updated Lagrangian formulation is considered to accommodate finite deformations of an elastic structure. The stabilized equal order velocity-pressure elements for incompressible flows are used in the motion of fluids. Fully coupled equations are solved simultaneously in a single computational domain. Numerical results are presented for fluid-solid interaction problems involving nonmatching interfaces to demonstrate the effectiveness of the methodology.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2000년도 춘계학술대회논문집
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• pp.1609-1614
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• 2000

This paper presents the modeling, theoretical formulation, and stability analysis for a combined system of a spinning disk and a head that contacts the disk. In the analytical model, head interface is considered by a rotating mass-spring-damper system together with a frictional follower force on the damped annular disks. The method of multiple scales is utilized to perform the stability analysis that shows the existence of instability associated with parametric resonances. This instability can be effectively stabilized by increasing the damping ratio of a disk.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2005년도 춘계학술대회
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• pp.102-108
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• 2005

We have developed highly stabilized (p-i-n)-type protocrystalline silicon (pc-Si:H) multilayer solar cells. To achieve a high conversion efficiency, we applied a double-layer p-type amorphous silicon-carbon alloy $(p-a-Si_{1-x}C_x:H)$ structure to the pc-Si:H multilayer solar cells. The less pronounced initial short wavelength quantum efficiency variation as a function of bias voltage proves that the double $(p-a-Si_{1-x}C_x:H)$ layer structure successfully reduces recombination at the p/i interface. It was found that a natural hydrogen treatment involving an etch of the defective undiluted p-a-SiC:H window layer before the hydrogen-diluted p-a-SiC:H buffer layer deposition and an improvement of the order in the window layer. Thus, we achieved a highly stabilized efficiency of $9.0\%$ without any back reflector.

• 한국분말재료학회지
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• 제19권4호
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• pp.278-284
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• 2012

$Al_2O_3$ foam is an important engineering material because of its exceptional high-temperature stability, low thermal conductivity, good wear resistance, and stability in hostile chemical environment. In this work, $Al_2O_3$ foams were designed to control the microstructure, porosity, and cell size by varying different parameters such as the amount of amphiphile, solid loading, and stirring speed. Particle stabilized direct foaming technique was used and the $Al_2O_3$ particles were partially hydrophobized upon the adsorption of valeric acid on particles surface. The foam stability was drastically improved when these particles were irreversibly adsorbed at the air/water interface. However, there is still considerable ambiguity with regard to the effect of process parameters on the microstructure of particle-stabilized foam. In this study, the $Al_2O_3$ foam with open and closed-cell structure, cell size ranging from $20{\mu}m$ to $300{\mu}m$ having single strut wall and porosity from 75% to 93% were successfully fabricated by sintering at $1600^{\circ}C$ for 2 h in air.

• 한국재료학회지
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• 제11권6호
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• pp.460-464
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• 2001

Pechini방법으로 제조한 La$_{0.8}$Ca$_{0.2}$CrO$_3$CLC소결체와 La$_{0.8}$Ca$_{0.2}$CrO$_3$CLC-Green체를 YSZ에 적층한 후 온도의 함수로 계면에서의 미세구조와 성분이동 등의 거동을 고찰하였다. CLC-G/CLC와 CLC/YSZ계면에서의 CLC면은 반응온도에 상관없이 XRD 관찰에서 주상은 La$_{1-x}$ Ca$_{x}$CrO$_3$그리고 CLC와 반응하지 않은 YSZ면의 결정 상은 cubic-ZrO$_2$으로 각각 나타났다. CLC/YSZ반응 계면의 성분이동은 Zr > La>>Cr>>>Ca 순이었으며, 온도에 따른 개개 성분의 이동도 차이는 크지 않았다. CLC/YSZ계면간의 결합은 계면성분간의 과다한 성분이동 없이 현 연구의 온도전체에 걸쳐 가능한 것으로 나타났다. CLC-G/CLC간의 SEM미세구조는 결합 면을 경계로 저온에서는 결정의 입자크기 차이를 보이다가 온도가 증가할수록 균일화되는 경향을 보였다.였다. 보였다.였다.