• Journal of the Korean Ceramic Society
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• v.23 no.1
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• pp.27-32
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• 1986

This study is aimed at synthsizing high dielectric material (Ba, Sr)$TiO_3$ through direct wet process. Pure and ultra fine particle of (Ba, Sr)$TiO_3$ Powder was synthesized from $BaCl_2$ $SrCl_2$ and TiCl4 aqeous solution at KOH Solution in the $N_2$ gas atmosphere. $BaCl_2$ $SrCl_2$ and TiCl4 were Mixed with the mole ratio of 1:9, 3:7:10, 5:5:10, 7:3:10, 9:1:10 and sythesized at 4$0^{\circ}C$~9$0^{\circ}C$ for 10min~15hrs. The particle size particle shape crystallinity and synthesis condition of (Ba, Sr)$TiO_3$ powder with the variation of temperature and reaction time in the aqueous solution studied by the exprimental instruments of DTA. TGA, X-ray diffratometer SEM.

• Journal of the Korean Ceramic Society
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• v.43 no.5 s.288
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• pp.284-292
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• 2006

$MgTiO_3{\cdot}CaTiO_3{\cdot}SrTiO_3$ system ceramics (MCST) were synthesized to study the effect of Ca addition amount and Sr substitution on temperature coefficient of resonance sequency. Temperature coefficient of resonance frequency was slightly increased by small amount ($i.e.{\sim}5%$) of Sr substitution. In case of 50% to 75% addition amount of $MgTiO_3$, decrease of quality factor was not observed with increasing dielectric constant.

• Journal of the Korean Ceramic Society
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• v.24 no.1
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• pp.17-22
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• 1987

This study is to detect the synthetic condition for the formation of Sr-Ferrite(SrFe12O19) by hydrothermally reaction. Mixed suspension of SrCl26H2O and FeCl3 6H2O were fixed on pH and were subjected to autoclavings at various temperature(150∼300$^{\circ}C$), reaction time(2hrs.∼48hrs.). The Sr-Ferrite powders were synthesized at 150$^{\circ}C$ for 36hrs, 200$^{\circ}C$ for 4hrs and 250$^{\circ}C$ for 2hrs. Synthesized powders were increased particle sizes at longer reaction time and higher reaction temperature. It has hexagonal ferrite M-type structure and has high purity of SrO.5.6 Fe2O3 composition.

• Korean Journal of Materials Research
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• v.8 no.8
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• pp.737-743
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• 1998

The synthesis of $SrAI_2O_4:Eu^{2+}$ phosphor and its properties of both photoluminescence and long-phosphorescent were investigated as a function of sintering condition. Single phase of $SrAl_2O_4$ was obtained by sintering the mixtures of $SrCO_3$, $Eu_2O_3$, $AI_2O_34 and 3wt% $B_2O_3$ powders over 100$0^{\circ}C$ in Ar/H2 atmosphere. The optimum sintering condition for the long-phosphorescent phosphor of $SrAI_2O_4:Eu^{2+}$ was found at 130$0^{\circ}C$ for 3hours. The PL emission spectrum of $SrAI_2O_4:Eu^{2+}$ shows a maximum peak intensity at 520nm(2.384eV) with a broad emission extending from 450 to 650nm which resulted from the $4f^65d^1$$\rightarrow$$4f^7$ transition of $Eu^{+2}$ under 360nm exitation. Monitored at 520nm. the excita¬tion spectrum of $SrAI_2O_4:Eu^{2+}$ exhibits a maximum peak intensity at 360nm (3.44eV) with a broad absorption band extending from 250 to 480nm.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.863-866
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• 1999

(Ba,Sr)$TiO_3$ thin films have attracted groat interest as new dielectric materials of capacitors for ultra-large-scale integrated dynamic random access memories (ULSI-DRAMs) such as 1 Gbit or 4 Gbit. In this study, inductively coupled $BCl_3/Cl_2$/Ar plasmas was used to etch (Ba,Sr)$TiO_3$ thin films. RF power/dc bias voltage = 600 W/-250 V and chamber pressure was 10 mTorr. The $Cl_2/(Cl_2+Ar)$ was fixed at 0.2, the (Ba,Sr)$TiO_3$ thin films were etched adding $BCl_3$. The highest (Ba,Sr)$TiO_3$ etch rate is 480$\AA/min$ at 10 % $BCl_3$ adding to $Cl_2$/Ar. The characteristics of the plasmas were estimated using optical emission spectroscopy (OES). The change of Cl, B radical density measured by OES as a function of $BCl_3$ percentage in $Cl_2$/Ar. The highest Cl radical density was shown at the addition of 10% $BCl_3$ to $Cl_2$/Ar. To study on the surface reaction of (Ba,Sr)$TiO_3$ thin films was investigated by XPS analysis. Ion enhancement etching is necessary to break Ba-O bond and to remove $BaCl_2$. There is a little chemical reaction between Sr and Cl, but Sr is removed by physical sputtering. There is a chemical reaction between Ti and Cl, and Tic14 is removed with ease. The cross-sectional of (Ba,Sr)$TiO_3$ thin film was investigated by scanning electron microscopy (SEM), the etch slope is about $65\;{\sim}\;70$.

• Proceedings of the Korean Ceranic Society Conference
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• 2004.10a
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• pp.79.2-79.2
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• 2004

• Proceedings of the Korean Magnestics Society Conference
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• 2010.06a
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• pp.122-123
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• 2010

• Journal of Sensor Science and Technology
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• v.18 no.6
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• pp.456-461
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• 2009

Perovskite-structure $Sr(Ti_{1-x}Fe_x)O_3$ thick films, in which x is 0.4 or 0.6, were prepared by normal ceramic process on alumina substrate. Electrical resistance was measured as a function of thermal treatment condition including atmosphere, time, and temperature. The resistance of $Sr(Ti_{1-x}Fe_x)O_3$ films is lower than those of $SrTiO_3$ or $SrFeO_3$ films. The temperature coefficient of resistance over $550^{\circ}C$ was measured to be 0 for the $Sr(Ti_{1-x}Fe_x)O_3$ films after thermal treatment at $1100^{\circ}C$ in air. The sensing property of the films was also measured as a function of temperature and gas such as $O_2$, CO, $CO_2$, NO and $NO_2$. $Sr(Ti_{1-x}Fe_x)O_3$ films showed a good sensing property for $O_2$, but no sensing signal for CO, $CO_2$, NO and $NO_2$.

• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.85-87
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• 2002

The $(Ba_xBi_{0.6-x}Sr_{0.4})TiO_3$[x=0.1, 0.2, 0.3] ceramics were prepared by conventional mixed oxide method The structural properties of the $(Ba_xBi_{0.6-x}Sr_{0.4})TiO_3$[x=0.1, 0.2, 0.3] ceramics with the sintering temperature($1200^{\circ}C,\;1250^{\circ}C,\;1300^{\circ}C$) were investigated by XRD, SEM, EDS. Increasing the sintering temperature, the intensity of the $Ba_{0.5}Sr_{0.5}TiO_3$ (100), (110), (111), (200), (310) peaks and $SrBi_4Ti_4O_{15}$ (319), (040) peaks were increased. The gram of the $(Bi_{0.2}Ba_{0.4}Sr_{0.4})TiO_3$ ceramics sintered at $1250^{\circ}C$ were fine and uniform. Increasing the sintering temperature. the average gram size of the $(Bi_{0.2}Ba_{0.4}Sr_{0.4})TiO_3$ ceramics were decreased. The density of $(Bi_{0.1}Ba_{0.5}Sr_{0.4})TiO_3$ ceramics sintered at $1250^{\circ}C$ was 5.4524 [$g/cm^2$].

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1488-1490
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• 2002

The (Bi,Ba,Sr)$TiO_3$[BBST] thin films were fabricated on Pt/Ti/$SiO_2$/Si substrate by RF sputtering method. We investigated the effects of Ar/$O_2$ rates on the structural properties of BBST thin films. Decreasing the $O_2$ rates, the intensity of $BaBi_4Ti_4O_{15}$ and $Bi_4Ti_3O_{12}$ peaks were increased but the $(Ba_{0.5}Sr_{0.5})TiO_3$ peak was decreased. In the case of BBST thin films deposited with condition of 90/10 (Ar/$O_2$) ratio, the composition of Ba/Sr/Bi was 0.35/0.4/0.25. Also, in the BBST thin films deposited with condition of 80/20(Ar/$O_2$) ratio, the composition of Br,Sr and Ti were relatively uniform. But the component of Bi and Ti were diffused into the Pt layers.