• Journal of the Semiconductor & Display Technology
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• v.4 no.4 s.13
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• pp.5-8
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• 2005

In this study, we prepared the ITO thin film for TOLED(Top-emitting OLED) or flexible display at room temperature using the FTS(Facing Targets Sputtering Apparatus). We observed characteristics of deposited thin films as a function of sputtering conditions. XRD patterns were independence trom oxygen gas flow and input current. But electrical and optical properties were strongly dependence. In the results, we could prepare good properties of ITO thin films resistivity of $4.27X10^{-4}[\Omega-cm]$, transmittance of over 80% at working gas pressure 1[mTorr], input current 0.6[A], oxygen gas ratio 0.3[sccm], at room temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.290-290
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• 2011

In this study Diamond-like carbon (DLC) films were deposited on p-type Si substrates using a Radio-Frequency magnetron Sputtering system. The DLC film was deposited by bombarding graphite target with a N2/Ar plasma mixture with various conditions: substrate, pressure, deposition time, temperature of substrate, power and ratio of gas mixture. The effect on the conduction and hardness of DLC thin films were investigated. The conduction of DLC films were measured by I-V measurement. In addition, Raman analysis was performed to study the chemical bonding structure. The hardness was measured by Nano indentation. Atomic Force Microscopy was used for determined surface morphology of DLC film.

• Korean Journal of Materials Research
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• v.11 no.9
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• pp.751-758
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• 2001

Anatase $TiO_2$ thin films as a photocatalyst were prepared by the D.C reactive magnetron sputtering process. The $TiO_2$ thin films were deposited on Si(100) substrates under the various conditions : oxygen partial pressure, working pressure, substrate temperature, D.C power, and deposition time. The morphology of the TiO$_2$ thin films showed an island structure. At early stages of film growth, amorphous phase formed. However, during the further growth, columnar crystalline $TiO_2$grains evolved. The crystallinity of the thin films depended on the oxygen partial pressure, the working pressure and the D.C. powers.

• Journal of the Korean institute of surface engineering
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• v.39 no.2
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• pp.70-75
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• 2006

As technology advances, there is a demand for development of hard, solid lubricant coating. (Ti,Cr)N-$MoS_2$, films were deposited on SKD 11 tool steel substrate by co-deposition of $MoS_2$, with (Ti,Cr)N using a D.C. magnetron sputtering process. The influence of the $N_2/Ar$ gas ratio, the deposition temperature, the amount of $MoS_2$ in the films, and the bias voltage on the mechanical and the structural properties of the films were investigated. Wear tests were performed on the films deposited in various conditions.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1485-1487
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• 2000

A variety of target configurations in sputtering process have been proposed to deposit various structures of thin film alloys and compound films. In this study, we presented the comparative experimental results regarding to the characterization of properties of Cu-Ni thin films deposited by using a magnetron co-sputtering method, as a function of target configurations; one is using a single target with varying the area of Ni chips attached on the Cu target and another is using a dual-type target with two targets of Ni and Cu separated each other. Structural(d-spacing, crystal orientation, crystallite size, cross-sectional morphology) and electrical(resistivity) properties of deposited films are characterized and compared as a function of target configurations as well as deposition conditions.

• Applied Science and Convergence Technology
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• v.23 no.3
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• pp.145-150
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• 2014

MgO thin films were deposited by internal ICP-assisted reactive-magnetron sputtering with bipolar pulse bias on a substrate to suppress random arcs. Mg is reactively sputtered by a bipolar pulsed DC power of 100 kHz into ICP generated by a dielectrically shielded internal antenna. At a mass flow ratio of $Ar/O_2$ = 10 : 2 and an ICP/sputter power ratio of 1 : 1, optimal film properties were obtained (a powder-like crystal orientation distribution and a RMS surface roughness of approximately 0.42 nm). A bipolar pulse substrate bias at a proper frequency (~a few kHz) prevented random arc events. The crystalline preferred orientations varied between the (111), (200) and (220) orientations. By optimizing the plasma conditions, films having similar bulk crystallinity characteristics (JCPDS data) were successfully obtained.

• Korean Journal of Materials Research
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• v.12 no.1
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• pp.82-88
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• 2002

Chromium carbide films were deposited on high speed steels using a Cr_3C_2$ target by magnetron sputtering. Effects of the deposition parameters (power, Ar pressure and substrate temperature) on deposition rates and surface roughnesses of the films were investigated. The morphologies of those films were characterized by scanning electron microscopy and atomic force microscopy. The grain size of the samples deposited using dc-power is larger than that using equivalent rf-power. The hardness of the sample increases with increasing rf-power, whereas the elastic modulus nearly does not change with rf-power. The optimum sputter deposition conditions for chromium carbide on high speed steels in the corrosion resistance aspect were found to be the rf-power with small roughness.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.40 no.12
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• pp.1280-1289
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• 1991

The setting up and the characteristics of the reactive magnetron sputtering process are described and TiN thin film deposited by this system is studied in this paper. We have studied characteristics of the discharge voltage-current, electron temperature and density. With the variation of discharge current and magnetic field, partial pressure of NS12T that changed from Ti to TiN sputtering region has been investigated with experimental method. We have analyzed the physical characteristics of TiN thin film obtained under the various conditions in this sputtering process with SEM photo-analysis and X-ray diffraction pattern of these samples.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.304-307
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• 2001

High quality BSCCO thin films have been fabricated by means of an ion beam sputtering at various substrate temperatures, T$\sub$sub/, and ozone gas pressures, PO$_3$. The correlation diagrams of the BSCCO Phases appeared against T7ub and PO3 are established in the 2212 and 2223 compositional films. In spite of 2212 compositional sputtering, Bi2201 and Bi2223 phases as well as Bi2212 one come out as stable Phases depending on T$\sub$sub/ and PO$_3$. From these results, the thermodynamic evaluations of ΔH and ΔS, which are related with Gibbs' free energy change for single Bi2212 or Bi2223 phase are performed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.217-220
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• 1997

(Ba,Sr)TiO$_3$ thin film capacitors were prepared on SiO$_3$/Si(100)wafer by RF sputtering technique. The structural and crystallographic properties were studied with deposition conditions and annealing temperatures. Microstructural properties of (Ba,Sr)TiO$_3$ thin films were investigated by the SEM, XRD. The thickness and grain size were studied for the varying of RF power and temperature.