• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.52-53
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• 2005

$Y_2O_3$ film was directly deposited on Ni-3at%W substrate using DC reactive sputtering technique. Metallic yttrium was used for DC sputtering target and water vapor was used for oxidizing the deposited metallic Yttrium atoms on the substrate. The window of the water vapor turned out to be broad. The minimum partial pressure of water vapor was determined by sufficient oxidation of the $Y_2O_3$ film, and the maximum partial pressure of water vapor was determined by the non-oxidation of the target surface. As the sputtering power was increased, The deposition rate increased without narrowing the window. The fabricated $Y_2O_3$ films showed good texture qualities and surface morphologies. The YBCO film deposited directly on the $Y_2O_3$ buffered Ni-3at%W substrate showed $T_c$, $I_c$ (77 K, self field), and $J_c$ (77 K, self field) of 89 K, 64 A/cm and 1.l $MA/cm^2$, respectively.

• 한국전기전자재료학회논문지
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• 제14권6호
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• pp.470-474
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• 2001

This paper describes the fabrication and characteristics of CrN thin-film type pressure sensors, in which the sensing elements were deposited on SuS. 630 diaphragm by DC reactive magnetron sputtering in an argon-nitride atmosphere(Ar-(10%)N$_2$). The optimized condition of CrN thin-film sensing elements was thickness range of 3500$\AA$ and annealing condition(300$\^{C}$, 3 hr) in Ar-10%N$_2$ deposition atmosphere. Under optimum conditions, the CrN thin-films for strain gauges is obtained a high resistivity, ρ=1147.65 $\mu$Ωcm, a low temperature coefficient of resistance, TCR=186ppm/$\^{C}$ and a high temporal stability with a good longitudinal, 11.17. The output sensitivity of fabricated CrN thin-film type pressure sensors is 2.36 mV/V, 4∼20nA and the maximum non-linearity is 0.4%FS and hysteresis is less than 0.2%FS.

• 한국재료학회지
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• 제30권4호
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• pp.211-216
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• 2020

Amorphous In-Ga-Zn-O (a-IGZO) thin film transistors, because of their relatively low mobility, have limits in attempts to fulfill high-end specifications for display backplanes. In-Zn-O (IZO) is a promising semiconductor material for high mobility device applications with excellent transparency to visible light region and low temperature process capability. In this paper, the effects of working pressure on the physical and electrical properties of IZO films and thin film transistors are investigated. The working pressure is modulated from 2 mTorr to 5 mTorr, whereas the other process conditions are fixed. As the working pressure increases, the extracted optical band gap of IZO films gradually decreases. Absorption coefficient spectra indicate that subgap states increase at high working pressure. Furthermore, IZO film fabricated at low working pressure shows smoother surface morphology. As a result, IZO thin film transistors with optimum conditions exhibit excellent switching characteristics with high mobility (≥ 30㎠/Vs) and large on/off ratio.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.205-205
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• 2009

As a p-type semiconductor NiO is potential material which can be used in many application including QD-LED. NiO films were deposited on glass substrates using rf-sputtering method. The properties of resistivity, surface roughness, etc in the NiO films were investigated at different sputtering parameters. The resistivity of $l.88{\times}10^{-2}{\sim}3.71{\times}10^{-2}{\Omega}cm$ with sputtering power(80~200 watts) and change was very low. The sputtering pressure at 3~60 mTorr resulted in rather broad change ofresistivity of $0.58{\times}10^{-2}{\sim}4.67{\Omega}cm$. The oxygen content in sputtering gas was found to be very effective to control the resistivity from $2.01{\times}10^{-2}$ to $1.22{\times}10^2{\Omega}cm$ with 100~2.5% $O_2$ in Ar gas. In addition, the surface roughness showed the RMS values of 0.6~1.1 nm and the dependence on sputtering parameters was weak.

• 한국진공학회지
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• 제7권3호
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• pp.255-260
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• 1998

Ionized magnetron sputtering은 high density plasma를 사용하여 스퍼터된 입자의 이온화율을 기판에서의 플럭스 기준으로 80%이상까지 증대시킬 수 있는 방법으로 반도체 소자의 아주 작은 홀이나 via contact등을 채울 수 있는 아주 유용한 수단이나 가스의 압력 이 30mTorr 이상으로 상당히 높아야만 이온화율이 높게 유지되어 스퍼터 증착 속도가 느려 지고 중성입자의 각도 분포가 넓어지는 단점이 있다. 그 원인이 스퍼터된 입자들에 의한 전 자 온도의 급격한 감소와 타겟 주변에서의 가스 희귀화 현상에 있다고 보고 이를 보완하고 자 스퍼터 전력을 펄스화 하는 방법을 고안하여 실험하였다. 그 결과 펄스의 on/off time이 10ms/10ms, 100ms/100ms에서 가장 높은 이온화율을 가시광 분광 결과에서 보였으며 실제 로 Ag의 XRD결과 (111)에서 (200)으로 우선 방위의 현격한 변화가 관찰되었다. 이를 고전 력 스퍼터링에 의한 중성 가스 가열과 냉각의 측면에서 해석하였다.

• 한국진공학회지
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• 제18권2호
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• pp.141-146
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• 2009

rf magnetron sputtering 법을 이용하여 Pt/Ti/$SiO_2$/Si 기판 위에 buffer layer인 $TiO_2$ 층을 증착한 후 PLZT 강유전체 박막을 증착하였다. PLZT 박막 증착 시 가스 분압비가 박막의 특성에 미치는 영향을 알아보기 위해 Ar/$O_2$ 분압비를 각각 27/1.5 sccm, 23/5.5 sccm, 21/7.5 sccm, 19/9.5 sccm로 변화시키면서 박막을 증착하였다. 이들 박막의 구조적인 특성을 분석하기 위해 X-선 회절법을 사용하였으며 FE-SEM을 이용하여 입자상을 관찰하였다. 또한 박막의 유전특성을 분석하기 위해 Precision LC를 이용하여 이력곡선, 잔류분극, 누설전류를 측정하였다. 산소 분압이 높아질수록 박막의 결정성 및 치밀성이 저하되었으며, (110) 방향에서 (111) 방향으로 우선배향성이 변화하는 것을 확인하였다. 산소 분압비의 변화는 박막 표면 및 강유전 특성에 영향을 미치는 것으로 판단된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.218-219
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• 2009

$TiO_2$ thin films were deposited on si wafer and glass substrates by rf magnetron sputtering. The films were coated under argon atmosphere at different working pressures: 3mTorr, 5mTorr, 7mTorr, 10mTorr. The films were annealed at $550^{\circ}C$ for 5h after deposition. Film structures were analyzed with XRD, As the increase of working pressure, $TiO_2$ films have been good crystallinity. At 3mTorr and 5mTorr, the films were observed in rutile phase and anatase phase.

• 한국세라믹학회지
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• 제31권6호
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• pp.643-650
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• 1994

Highly [100]-oriented MgO thin films were deposited on Si(100) single crystal substrates by reactive RF magnetron sputtering. The effects of substrate temperature, gas pressure, RF input powder, and gas composition on the characteristics of MgO thin films were studied. The higher substrate temperature and the lower operating pressure were, the better crystallinity of the deposited MgO thin films were. The influences of the RF input power and oxygen to argon ratio were very complex. The physical characteristics of the films changed dramatically with deposition conditions. Highly smooth and epitaxial MgO films were obtained at the deposition conditions as follows; subatrate temperature, $600^{\circ}C$; operating pressure, 10 mtorr; RF input power density, 2 W/$\textrm{cm}^2$; the percentage of oxygen, 10%.

• 전자공학회논문지A
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• 제29A권8호
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• pp.49-55
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• 1992

We Have investigated the properties of the titanium nitrite films widely used in VLSI devices as diffusion barrier in Al-based metallization. TiN films were formed by reactive sputtering from Ti target in Ar-N$_2$ mixtures, varying deposition parameters such as N$_2$ partial pressure, substrate temperature, power, and total pressure. All the samples received the heat treatment at 45$0^{\circ}C$ for 30 min. The resulting films are characterized by mechanical stylus($\alpha$-step), x-ray diffraction(XRD), scanning electron microscopy(SEM), and four point probe method. The Tin film properties strongly depend on the deposition condition. The stoichiometry and Ti deposition rate are critically affected by nitrogen partial pressure, and the resistivity, in particular, is dependent on both the substrate temperature and sputtering power.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.101-102
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• 2005

Cadmium telluride (CdTe) films have been prepared on Coming 7059 glass, molybdemium (Mo), and polyimide (PI) substrates by r.f. magnetron sputtering technique. The influence of the sputter pressure on the structural and optical properties of these films was evaluated. In addition, a comparison of the properties of the films deposited on different substrates was performed.