• Journal of the Korean Magnetics Society
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• v.12 no.3
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• pp.99-102
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• 2002

We fabricated TMR devices which have doubly oxidized tunnel barrier using plasma oxidation method to form homogeneously oxidized AlO tunnel barrier. We sputtered 10 $\AA$-bottom Al layer and oxidized it with oxidation time of 10 sec. Subsequent sputtering of 13 $\AA$-Al was performed and the metallic layer was oxidized for 50, 80, and 120 sec., respectively. The electrical resistance changed from 500 Ω to 2000 Ω with increase of oxidation time, while variation of MR ratio was little spreading 27∼31 % which is larger than that of TMR device of ordinary single tunnel barrier. We calculated effective barrier height and width by measuring I-V curves, from which we found the barrier height was 1.3∼1.8 eV sufficient for tunnel barrier, and the barrier width (<15.0 $\AA$) was smaller than physical thickness. Our results may be caused by insufficient oxidation of Al precursor into A1$_2$O$_3$. However, doubly oxidized tunnel barriers were superior to conventional single tunnel barrier in uniformity and density. Our results imply that we were able to improve MR ratio and tune resistance by employing doubly oxidized tunnel barrier process.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.169-169
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• 1999

We studied magnetic properties of co thin films deposited on Pd (111) surface, which attracted much attention recently due to the perpendicular magnetic anisotropy, using magnetic circular dichroism(MCD). Special attention was paid on the effect of Pd capping and interface roughness on the direction of magnetic easy axis, and for that purpose MCD signals for all Co thicknesses were measured with two different ways : in-plane and out-of-plane geometry. In case of bare Co films deposited on smooth Pd(111) surface, no MCD signal was observed under 4$\AA$ co thickness. At 4$\AA$ Co thickness, MCD signal at the out-of-plane geometry was observed, and for thicker Co films, only in-plane MCD signal was measured. This type of magnetic easy axis transition has been reported for other cases like Co/Pt system. The effect of 5$\AA$ Pd capping on these bare Co films made an remarkable change on the transition of magnetic easy axis. Out-of-plane MCD signals exists up to 20$\AA$ Co thickness, and disappears at 24$\AA$ Co thickness. In-plane MCD signals first appears at 10$\AA$ Co thickness and gradually increases up to 24$\AA$ Co thickness. Between 10$\AA$ and 20$\AA$ Co thickness, in-plane and out-of-plane MCD signal coexist. The formation of multi-domain structure or the existence of tilted magnetic easy axis is an possible scenario for such an interesting coexistence. The effect of interface roughness was also tested by measuring MCD signal on Co films deposited on un-annealed Pd(111) surface. Out-of-plane MCD signal was observed up to 8$\AA$ Co thickness and the anisotropy of MCD signal at 4$\AA$ Co thickness was very large with respect to that of Co film deposited on the smooth substrate. Above 8$\AA$ thickness, there exists only in-plane MCD signal. From above results, it was concluded that both Pd capping and interface roughness induce and reenforce the perpendicular magnetic anisotropy. The large perpendicular magnetic anisotropy of Co/Pd multilayer system made by sputtering method can be well understood from our results.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.41 no.10
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• pp.788-795
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• 2013

A magnesium bipolar plate whose surface was protected by thinly deposited silver layer was investigated as an alternative to existing graphite bipolar plate of PEM fuel cells. Thin silver layer of $3{\mu}m$ was deposited on a magnesium alloy substrate by physical vapor deposition (PVD) method in an environment of $180^{\circ}C$. A number of tests were conducted on the fabricated magnesium based bipolar plates to determine their suitability for use in PEM fuel cell stacks. The test on corrosion resistance in the same pH condition as in a PEM operation demonstrated the layer protected the magnesium alloy substrate, while unprotected substrate suffered from severe corrosion. The contact resistance of the fabricated bipolar plate was less than $20m{\Omega}-cm^2$ which was superior to the conventional bipolar plates. A single cell was constructed using the fabricated bipolar plates and power output was measured. Due to the enhanced conductivity caused by low contact resistance, slight increase was observed in current density and output voltage. With low density of the magnesium substrate and ease on machining, the weight reduction of the stack of 30~40 % is possible to produce the same power output.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.12
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• pp.27-36
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• 2019

The demand for a low dispersion lens with a small refractive index and a high refractive index is increasing, and accordingly, there is an increasing need for a releasable protective film with high heat resistance and abrasion resistance. On the other hand, the optical industry has not yet established a clear standard for the manufacturing process and quality standards for mold-releasing protective films used in aspheric glass lens molding. Optical lens manufacturers treat this technology as proprietary information. In this study, an experiment was conducted regarding the optimization of ion etching, magnetron, and arc current at each source and filter part, and bias voltage in FCVA (filtered cathode vacuum arc)-based Ta-C thin film coatings. This study found that compared to iridium-rhenium alloy thin film sputtering products, the coating conditions were improved by approximately 50%, 20%, and 40% in terms of thickness, hardness, and adhesive strength of the film, respectively. The thin-film coating process proposed in this study is expected to contribute significantly to the development and utilization of glass lenses, which will help enhance the minimum mechanical properties and quality of the mold-release thin film layer required for glass mold surface forming technology.

• Journal of the Korean Magnetics Society
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• v.7 no.1
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• pp.38-43
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• 1997

For amorphous $Co_{1-x}Ti_x$(X=0.13, 0.16, 0.21 at.%) thin films deposited by DC magnetron sputtering method ferromagnetic resonance experiments have been used to investigate the dependence of surface magnetic properties according to annealing temperature (150~225 $^{\circ}C$). Spin wave resonance spectra for all annealing temperatures consist of several volume modes and one(or two) surface mode. It is suggested that both surfaces of the film have a perpendicular hard axis to the film plane(negative surface anisotropy). Also, the surface anisotropy $K_{s2}$ at substrate film interface is varied slowly from -0.11 to -0.25 erg/ $\textrm{cm}^2$ and the surface anisotropy $K_{s1}$ at film-air interface is varied from 0.16 to -0.53 erg/ $\textrm{cm}^2$ with increasing annealing temperature. We conjecture that the variation of surface anisotropy $K_{s1}$ is due to the increase of Co concentration resulted from Ti oxidation for low temperature annealing(150~200 $^{\circ}C$) and the diffusion of Co atoms near the film surfaces for high temperature annealing(225~250 $^{\circ}C$).

• Analytical Science and Technology
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• v.15 no.3
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• pp.236-242
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• 2002

A method was investigated to determine the thickness of coating on steel sheet using rf glow discharge atomic emission spectrometer. The RF gas-jet boosted glow discharge has such salient feature as good pleasure stability and high sputtering efficiency that it was possible to determine the thickness of silicon resin film on zinc electroplated steel. The erosion speed variation is dependent on discharge power, gas flow rate and discharge pressure. therefore determine discharge condition to measure the thickness of coating on steels. The fundamental studies have been carried out to investigate an optimum condition for in-depth analysis and composition of zinc coating on steel. In this study, the calibration curve for thickness determination of silicon resin film was found to be linear in the range of $1000{\sim}3500mg/m^2$ film thickness. The developed rf gas-jet boosted glow discharge was applied to the analysis of zinc coating and silicon resin film on steel made by RIST.

• Journal of Sensor Science and Technology
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• v.9 no.1
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• pp.36-43
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• 2000

In oder to enhance the selectivity of TMA(trimethylamine) gas, the ZnO-based films which were doped with $Al_2O_3$, $TiO_2, $In_2O_3$ and $V_2O_5$ catalysts with various weight percents were deposited in oxygen by RF magnetron sputtering method. To improve electrical stability of sensors, the ZnO-based films were annealed in oxygen at $700^{\circ}C$ for 1 hour. The TMA selectivity of sensors was defined by the magnitude($S_{TMA}/S_{DMA}$ and $S_{TMA}/S_{NH3}$) of TMA sensitivity relative to DMA and sensitivity ammonia($NH_3$) sensitivity, respectively. The $ZnO+Al_2O_3(4\;wt.%)+TiO_2(1\;wt.%)+In_2O_3(1\;wt.%)$ sensor showed high $S_{TMA}/S_{DMA}$ of 5.9 and $S_{TMA}/S_{NH3}$ of 26 to 160 ppm at the working temperature of $300^{\circ}C$ respectively.

• Journal of Sensor Science and Technology
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• v.5 no.1
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• pp.30-36
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• 1996

ZnO thin-film sensors were fabricated by RF magnetron sputtering method. The composition of the device material was 4 wt. % $Al_{2}O_{3}$, 1 wt. % $TiO_{2}$ and 0.2 wt. % $V_{2}O_{5}$ on the basis of ZnO material for developing the high sensitive TMA gas sensor which have an appropriate resistivity and the stability for practical use. They were also grown on the $SiO_{2}/Si$ substrates heated at $250^{\circ}C$ under a pure oxygen pressure of about 10 mTorr with a power of about 80 watts for 10 minutes. So as to enhance the stability of the resistivity, the thin films were annealed from $400^{\circ}C$ to $800^{\circ}C$. The sensors made with the thin film which were annealed at $700^{\circ}C$ for 60 minutes in pure oxygen gas exhibited a good sensing properties for TMA gas. The thin film grown at this condition showed the maximum sensitivity of 550 in TMA gas concentration of 160 ppm, and exhibited a good stability and excellent linearity.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.115-115
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• 2018

철강재는 대량 생산이 가능하며 경제성이 뛰어나고 기계적 성질도 우수하므로 다양한 산업 분야에서 널리 사용되고 있다. 그러나 철강재는 부식 환경에 취약하기 때문에 그 용도에 따라 다양한 내식성을 부여하는 표면처리를 적용하고 있다. 일반적으로 이러한 철강 재료에 대한 내식성 표면처리로는 습식공정을 이용한 아연(Zn)도금 표면처리가 널리 적용되고 있다. 그러나 최근에는 이러한 습식공정으로 인해 발생하는 자원소모 및 환경적인 문제와 더불어 고내식성 표면처리 소재에 대한 수요가 증가함에 따라 이러한 단점을 극복할 수 있는 새로운 소재 및 기술 개발에 대한 관심이 증대되고 있다. 이러한 관점에서 기존의 습식표면처리 공정을 건식으로 대체 또는 병행하고, 현행 아연소재를 대체할 수 있는 코팅소재로써 알루미늄(Al) 이나 마그네슘(Mg)으로 대체하는 방법이 시도되고 있다. 본 연구에서는 강판의 내식성을 향상시키기 위한 방법으로 기존의 습식 표면처리 공정에서 용이하지 않은 마그네슘을 이용하여 건식 PVD 프로세스에 의해 코팅막의 제작을 시도하였다. 그리고 코팅막 제작 조건 중에서 공정압력이 코팅막의 결정배향성에 미치는 영향과 내식성과의 상관관계를 규명하고자 하였다. 즉, 여기서는 강판 및 용융알루미늄 도금강판 상에 스퍼터링법에 의해 Ar 가스에 의한 공정압력을 2, 10 및 50 mTorr로 조절하면서 마그네슘 코팅막을 $2{\mu}m$ 두께로 각각 제작하였다. 이때 제작한 막의 표면 모폴로지 관찰(SEM) 및 결정구조 분석(XRD) 결과에 의하면, 강판 및 용융알루미늄도금강판 상에 제작한 코팅막들은 공통적으로 공정압력이 증가할수록 그모폴로지의 결정립의 크기가 작고 치밀한 구조로 변하였다. 또한 그때 형성된 코팅막의 결정구조는 표면에너지가 상대적으로 높은 Mg(002)면 피크의 점유율이 감소하고 표면에너지가 낮은 Mg(101)면 피크의 점유율이 증가하는 경향을 나타내었다. 그리고 공정압력이 증가할수록 Mg 격자 간 면 간격(d-value)이 증가하는 경향을 나타내었다. 이상에서 제작한 마그네슘 코팅막의 결정성장 과정은 본 진공 플라즈마 PVD 공정중 증착가 더불어 흡착역할을 하는 Ar의 움직임에 따라 설명 가능하였다[1,2]. 코팅막의 양극분극(Polarization)측정 결과에 의하면, 공정압력이 높은 조건에서 제작한 막일수록 부동태 특성이 우수하여 내식성이 향상되는 경향을 나타내었다. 특히, 공정압력이 상대적으로 높은 50 mTorr 조건에서 제작된 코팅막이 표면 마그네슘 결정의 크기가 조밀하고 결정구조는 Mg(002)면과 Mg(101)면의 상대강도 비가 유사하여 내식성 가장 우수하였다.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.7
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• pp.6-13
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• 2006

Tin doped indium oxide(ITO) and Al doped zinc oxide(ZnO:Al) films, which are widely used as a transparent conductor in optoelectronic devices, were prepared by using the capacitively coupled DC magnetron sputtering method. ITO and ZnO:Al films with the optimum growth conditions showed each resistivity of $1.67{\times}10^{-3}[{\Omega}-cm],\;2.2{\times}10^{-3}[{\Omega}-cm]$ and transmittance of 89.61[%], 90.88[%] in the wavelength range of the visible spectrum. The two types of 5 inch-PDP cells with ZnO:Al and ITO transparent electrodes were made under the same manufacturing conditions. The PDP cell with ZnO:Al film was optimally operated in the mixing gas rate of Ne(base)-Xe(8[%]), and at gas pressure of 400[Torr]. It also shows the average measured brightness of $836[cd/m^2]$ at voltage range of $200{\sim}300$[V]. Luminous efficiency, one of the key parameter for high brightness and low power consumption, ranges from 1.2 to 1.6[lm/W] with increasing frequency of ac power supplier from 10 to 50[Khz]. The brightness and luminous efficiency are lower than those with ITO electrode by about 10[%]. However, these values are considered to be enough for the normal operation of PDP TV.