• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2002년도 춘계학술발표회 초록집
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• pp.46-46
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• 2002

It is well known that thin film growth and surface morphology can be substantially modified by ion-bombardment during the deposition. This is particularly important in case of thin-film deposition at low temperatures where the film growth occurs under highly nonequilibrium conditions. An attractive way to promote crystalline growth and surface morphology is deposition of additional energy in to the surface of the growing film by bombardment with hyperthermal particles. We were deposited crystalline Ti and TiN thin films on Si substrate by magnetron sputtering method with grid. Its thin films were highly smoothed and dense as increasing grid bias. In order explore the benefits of a bombardment of the growing film with high energetic particles. Ti and TiN films were deposited on Si substrates by an unbalanced magnetron sputter source with attached grid assembly for energetic ion extraction. Also, we have studied the variation of the plasma states by Langmuir probe and Optical Emission Spectroscopy (OES). The epitaxial orientation. microstructual characteristics. electrical and surface properties of the films were analyzed by XRD. SEM. Four point probe and AFM.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.287-287
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• 2010

We report a new direct patterning method, called liquid bridge-mediated nanotransfer molding (LB-nTM), for the formation of two- or three-dimensional structures with feature sizes between tens of nanometers and tens of micron over large areas. LB-nTM is based on the direct transfer of various materials from a mold to a substrate via a liquid bridge between them. This procedure can be adopted for automated direct printing machines that generate patterns of functional materials with a wide range of feature sizes on diverse substrates. Arrays of TIPS-PEN TFTs were fabricated on 4" polyethersulfone (PES) substrates by LB-nTM using PDMS molds. An inverted staggered structure was employed in the TFT device fabrication. A 150 nm-thick indium-tin oxide (ITO) gate electrode and a 200 nm-thick SiO2dielectric layer were formed on a PES substrate by sputter deposition. An array of TIPS-PEN patterns (thickness: 60 nm) as active channel layers was fabricated on the substrate by LB-nTM. The nominal channel length of the TIPS-PEN TFT was 10 mm, while the channel width was 135 mm. Finally, the source and drain electrodes of 200 nm-thick Ag were defined on the substrate by LB-nTM. The TIPS-PEN TFTs can endure strenuous bending and are also transparent in the visible range, and therefore potentially useful for flexible and invisible electronics.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2008년도 추계학술대회 논문집
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• pp.205-210
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• 2008

Titanium-doped indium oxide (ITiO) films were prepared on soda-lime glass substrate using a magnetic null discharge (MND) sputter source. The ITiO thin films containing 10wt.% Ti showed the minimum resistivity of $\rho=5.5{\times}10^{-3}{\Omega}-cm$. The optical transmittance increases from 70% at 450 nm to 80% at 700 nm in visible spectrum. Photoelectron peaks for In 3d, Ti 2p, O 1s and C1s were detected for the ITiO film in the binding energy range of 0 to 1100 eV. The surface roughness of the sample showed a change from 10 nm to 50 nm. The ITiO film used for TCO layer of DSCs exhibited an energy conversion efficiency of about 3.8% at light intensity of 100 mW/$cm^2$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1651-1652
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• 2006

In this study, the 2-step methode by ALD equipment was used to improve the characteristics of ZnO thin films used in a piezoelectric layer when the FBAR devices of a SMR type are fabricated. The Height of formed buffer layer was $400{\AA}$ and ZnO thin film of $13600{\AA}$ was deposited by RF sputter on the buffer layer. When ZnO thin films are deposited, deposition conditions such as pressure, injection time of source and purge time were changed variously. The characteristics of piezoelectric layer such as a crystal orientation and micro-structure of deposited ZnO thin films were studied by SEM, AFM and XRD.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.395-395
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• 2007

We report on the fabrication of soluble pentacene-based thin-film transistors (TFTs) that consist of $NiO_x$, poly-vinyl phenol (PVP), and Ni for the source-drain (SID) electrodes, gate dielectric, and gate electrode, respectively. The $NiO_x$ SID electrodes of which the work function is well matched to that of soluble pentacene are deposited on a soluble pentacenechannel by sputter deposited of NiO powder and show a moderately low but still effective transmittance of ~65% in the visible range along with a good sheet resistance of ${\sim}40{\Omega}/{\square}$. The maximum saturation current of our soluble pentacene-based TFT is about $15{\mu}A$ at a gate bias of -40showing a high field effect mobility of $0.06cm^2/Vs$ in the dark, and the on/off current ratio of our TFT is about $10^4$. It is concluded that jointly adopting $NiO_x$ for the S/D electrodes and PVP for gate dielectric realizes a high-quality soluble pentacene-based TFT.

• 식물분류학회지
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• 제53권2호
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• pp.102-109
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• 2023

The basic information of ovule and seed characteristics was investigated for five monotypic and endemic genera in the Korean peninsula as categorized by the Flora of Korea category. The carpels and seeds were sectioned with a rotary microtome. Mature seeds were coated with platinum using an ion sputter and observed using a scanning electron microscope. As a result, Abeliophyllum was found to be anatropous and a unitegmic ovule, with a slightly colliculate seed surface and exotestal seed coat type. The ovule of Coreanomecon was anatropous and bitegmic, having a distinct echinate seed surface, and exo-endotestal seed coat type with a prismatic crystal in the mesotesta. The ovule of Hanabusaya was anatropous and a unitegmic, with a long reticulate seed surface sculpture, and distinct exotestal seed coat type. In addition, a wing developed at the opposite side of the raphe bundle. Megaleranthis was an anatropous and bitegmic ovule, having a small pentagonal disk shape, a concave seed surface and exotestal seed coat type. Finally, Pentactina was also anatropous and a unitegmic ovule, reticulate seed sculpture, and endotestal seed coat type. These data will be proving to be a source of good information for securing bio-sovereignty in the near future.

• 한국정보통신학회논문지
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• 제13권11호
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• pp.2385-2390
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• 2009

본 연구에서는 C-축 우선 배향 특성을 가지는 N-doped ZnO 박막을 증착하고 그 미세구조의 특성을 분석 비교하였다. ZnO박막은 $N_2O$ 가스 분위기에서 RF reactive magnetron sputtering 시스템을 사용하여 p-Si(100) 웨이퍼 위에 증착되었다. $N_2O$ 가스는 N doping source로 사용되었으며, 전체 가스 유량에 대한 $N_2O$ 가스의 비율 $N_2O/(N_2O+Ar)$과 증착 전력을 증착의 주요 공정 변수로 선택하여 다양한 가스 비율과 증착 전력에 대한 박막의 미세 구조 특성을 비교 분석하였다. 특히, Auger electron spectroscopy (AES)를 이용하여 ZnO 박막 내에 들어가 존재하는 불순물 N의 수직분포를 분석하였고, 여러 가지 증착 조건에서 제작된 ZnO 박막의 표면형상 및 미세구조 특성을 Scanning Electron Microscope (SEM)를 이용하여 분석하였다.

• 한국진공학회지
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• 제19권1호
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• pp.58-65
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• 2010

먼저 RF 마그네트론 스퍼터링법을 이용하여 사파이어 기판 위에 AlN 박막을 증착하였다. AlN 공급원으로는 분말소결된 AlN 타겟을 적용하였다. 플라즈마 파워를 50에서 110 W로 증가시켰을 때 AlN 층의 두께는 선형적으로 증가하였다. 그러나 동작압력을 3에서 10 mTorr로 증가시켰을 때는 동작기체인 아르곤 양이 증가함에 따라 AlN 타겟으로부터 스퍼터링되어 나온 AlN 입자들의 평균자유행정의 거리가 감소하기 때문에 AlN 층의 두께는 약간 감소하였다. 질소 기체를 아르곤과 섞어주었을 때는 질소의 낮은 스퍼터링 효율에 의해서 AlN의 두께는 크게 감소하였다. 다음으로는 ZnO 형판 위에 AlN를 증착하였다. 그러나 700도 이상의 열처리에 의해서 AlN와 ZnO의 계면이 약간 분리되어 계면의 열적 안정성이 낮다는 결과를 얻었다. 게다가 스퍼터링으로 증착한 AlN 박막의 나쁜 결정성으로 인하여 700도에서 MOCVD의 반응기 기체인 수소와 암모니아에 의해서 AlN 밑의 ZnO 층이 분해되는 현상도 관찰하였다. 그리고 900도 이상에서는 ZnO가 완전히 분해되어 AlN 박막이 완전히 분리되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.154-154
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• 2012

Flexible complementary inverters based on thin-film transistors (TFTs) are important because they have low power consumption and high voltage gain compared to single type circuits. We have manufactured flexible complementary inverters using pentacene and amorphous indium gallium zinc oxide (IGZO) for the p-channel and n-channel, respectively. The circuits were fabricated on polyimide (PI) substrate. Firstly, a thin poly-4-vinyl phenol (PVP) layer was spin coated on PI substrate to make a smooth surface with rms surface roughness of 0.3 nm, which was required to grow high quality IGZO layers. Then, Ni gate electrode was deposited on the PVP layer by e-beam evaporator. 400-nm-thick PVP and 20-nm-thick ALD Al2O3 dielectric was deposited in sequence as a double gate dielectric layer for high flexibility and low leakage current. Then, IGZO and pentacene semiconductor layers were deposited by rf sputter and thermal evaporator, respectively, using shadow masks. Finally, Al and Au source/drain electrodes of 70 nm were respectively deposited on each semiconductor layer using shadow masks by thermal evaporator. The characteristics of TFTs and inverters were evaluated at different bending radii. The applied strain led to change in voltage transfer characteristics of complementary inverters as well as source-drain saturation current, field effect mobility and threshold voltage of TFTs. The switching threshold voltage of fabricated inverters was decreased with increasing bending radius, which is related to change in parameters of TFTs. Throughout the bending experiments, relationship between circuit performance and TFT characteristics under mechanical deformation could be elucidated.

• 한국재료학회지
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• 제28권4호
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• pp.241-246
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• 2018

$TaN_x$ film is grown by plasma enhanced atomic layer deposition (PEALD) using t-butylimido tris(dimethylamido) tantalum as a metalorganic source with various reactive gas species, such as $N_2+H_2$ mixed gas, $NH_3$, and $H_2$. Although the pulse sequence and duration are the same, aspects of the film growth rate, microstructure, crystallinity, and electrical resistivity are quite different according to the reactive gas. Crystallized and relatively conductive film with a higher growth rate is acquired using $NH_3$ as a reactive gas while amorphous and resistive film with a lower growth rate is achieved using $N_2+H_2$ mixed gas. To examine the relationship between the chemical properties and resistivity of the film, X-ray photoelectron spectroscopy (XPS) is conducted on the ALD-grown $TaN_x$ film with $N_2+H_2$ mixed gas, $NH_3$, and $H_2$. For a comparison, reactive sputter-grown $TaN_x$ film with $N_2$ is also studied. The results reveal that ALD-grown $TaN_x$ films with $NH_3$ and $H_2$ include a metallic Ta-N bond, which results in the film's higher conductivity. Meanwhile, ALD-grown $TaN_x$ film with a $N_2+H_2$ mixed gas or sputtergrown $TaN_x$ film with $N_2$ gas mainly contains a semiconducting $Ta_3N_5$ bond. Such a different portion of Ta-N and $Ta_3N_5$ bond determins the resistivity of the film. Reaction mechanisms are considered by means of the chemistry of the Ta precursor and reactive gas species.