• 한국전기전자재료학회논문지
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• 제23권10호
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• pp.767-770
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• 2010

In this work, we investigated the static characteristics of 4H-SiC vertical metal-oxidesemiconductor field effect transistors (VMOSFETs) by adjusting the doping level of n-epilayer and the effect of a current spreading layer (CSL), which was inserted below the p-base region with highly doped n+ state ($5{\times}10^{17}cm^{-3}$). The structure of SiC VMOSFET was designed by using a 2-dimensional device simulator (ATLAS, Silvaco Inc.). By varying the n-epilayer doping concentration from $1{\times}10^{16}cm^{-3}$ to $1{\times}10^{17}cm^{-3}$, we investigated the static characteristics of SiC VMOSFETs such as blocking voltages and on-resistances. We found that CSL helps distribute the electron flow more uniformly, minimizing current crowding at the top of the drift region and reducing the drift layer resistance. For that reason, silicon carbide VMOSFET structures of highly intensified blocking voltages with good figures of merit can be achieved by adjusting CSL and doping level of n-epilayer.

• 한국전기전자재료학회논문지
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• 제15권11호
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• pp.969-975
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• 2002

Thin film transistors(TFT) were made based on the polycrystalline Si (poly-Si) crystallized by sequential lateral solidification(SLS) method. The electrical characteristics of the devices were analyzed. n-type TFTs did not show a superior characteristics compared to p-type TFTs. We analyzed the causes of the failure by focused ion beam(FIB) analysis and automatic spreading resistance(ASR) measurement, to study the structural integrity and the doping distribution, respectively. FIB showed no structural problems but it revealed a non-intermixed layer in the contact holes between the polysilicon and the aluminum electrode. ASR analyses on poly-Si layer with various doping concentrations and activation temperatures showed that the inadequately doped areas were partially responsible for the inferior behavior of the whole device.

• 대한전기학회논문지
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• 제41권3호
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• pp.267-273
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• 1992

An advanced on-resistance model of VDMOS devices in the low voltage regimes is proposed and verified by 2-D device simulations. The model considers the lateral gaussian doping profiles in the channel region and exact current spreading angles in the epitaxial layer for both linear and cellular geometries by employing the conformal mapping, It is found out that the on-resistance of low voltage VDMOS may be overestimated considerably if it is analyzed by the conventional method. The 2-D device simulation results show that the proposed model is valid for the VDMOS devices in the low voltage regimes.

• 한국세라믹학회지
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• 제42권12호
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• pp.793-799
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• 2005

A composite cathode of LSCF$(La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_3)\;and\;GDC\; (Gd_2O_3-doped\;CeO_2:Ce_{0.9}Gd_{0.1}O_{1.95_})$ was characterized in terms of an electrode response, using a point contact in an Yttria-Stabilized Zirconia (YSZ) electrolyte incorporated into AC two-point impedance spectroscopy. The point-contacted configuration amplifies the responses occurring near the YSZ/cathode interface through the aligned point contact on the planar LSCF/GDC electrode. The point contact interface increases the bulk resistance allowing the estimation of the point contact geometry and resolving the electrode-related responses. The resultant impedance spectra are analyzed through an equivalent circuit model constructed by resistors and constant phase elements. The bulk responses can be resolved from the electrode-related portions in terms of spreading resistance. The electrode-related polarizations are measured in terms of temperature and oxygen partial pressure. The modified impedance spectroscopy is discussed in terms of methodology and analytical aspects, toward resolving the electrode-polarization issues in solid oxide fuel cells.

• 전기전자학회논문지
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• 제23권3호
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• pp.832-838
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• 2019

본 논문에서는 차세대 전력 반도체 소자인 4H-SiC MOSFET에 대해 연구하였다. 특히 3300V급에서 기존의 DMOSFET 구조보다 개선된 전기적 특성을 갖는 Semi-SuperJunction MOSFET 구조를 제안하였으며, TCAD 시뮬레이션을 통해 기존의 MOSFET과 전기적 특성을 비교 분석하였다. Semi-SJ MOSFET 구조는 부분적으로 SJ를 도입한 구조로, 2차원의 공핍 효과를 통해 전계 분포가 개선되며, 항복 전압이 증가한다. 항복 전압의 개선을 통해 얻은 이득으로, 높은 농도의 도핑이 가능하기 때문에 온 저항을 개선시킬 수 있다. 제안한 Semi-SJ MOSFET 구조는 DMOSFET보다 항복 전압이 8% 감소하지만, 온 저항이 80% 감소한다. 또한 DMOSFET 구조를 개선한 Current Spreading Layer(CSL)구조에 비해서도 온 저항이 44% 감소한다.

• 한국건축시공학회지
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• 제18권2호
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• pp.185-193
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• 2018

In this study, using Granulated Blast Furnace Slag (GBFS), an industrial byproduct, and Phosphogypsum (PG), and Waste Lime (WL) as activator, non-sintering binder (NSB) which does not require a sintering process was produced, and the chemical penetration resistance was evaluated through a seawater resistance experiment. The result of the experiment showed that the inside of NSB mortar saw almost no influence from the ions in seawater due to its dense structure. Also, as it appears that only the surface reacts with ions in seawater while spreading inward is suppressed, the high seawater resistance of NSB could be confirmed.

• Journal of the Korean Wood Science and Technology
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• 제14권2호
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• pp.29-35
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• 1986

This study was carried out to examine the effect of aluminium sulfate addition to the alkali-acid catalyst phenolic resin for the manufacture of the kapur (Dryobalanops spp.) plywood on the reduction of phenolic resin spreading. On the manufacture of plywood, Adhesive Contents such as 50g/$m^2$, 75g/$m^2$ and 150g/$m^2$ were treated. The spreading adhesive content of 50g/$m^2$ and 75g/$m^2$ had been controlled to about 150g/$m^2$ added with the water in order to get sufficient spreading and controlled to pH 4.5 with aluminium sulfate [$Al_2(SO_4)_3$]. The results are summarized as follows: 1. Specific gravities of air dried plywood manufactured from each adhesive ranged from 0.77 to 0.86 and their moisture contents met the KS requirements. 2. In dry and wet shear strengths, 150 $P_{Al{\cdot}Ac}$ adhesive showed the highest and 75 $P_{Al{\cdot}Ac{\cdot}Am}$ adhesive indicated higher value than 150 $P_{Al{\cdot}Ac}$ adhesive. 3. In case of glue shear strength after boiling test, 150 $P_{Al{\cdot}Ac}$ adhesive was the best and adding of aluminium sulfate was not effective on reinforcement of boiling water resistance of phenolic resin, but met KS requirements. 4. 75 $P_{Al{\cdot}Ac{\cdot}Am}$ adhesive showed the good shear strength and met KS requirements. Therefore, adding of aluminium sulfate was very efficient for economical plywood manufacture.

• 전기전자학회논문지
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• 제3권2호
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• pp.236-242
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• 1999

BiCMOS 공정으로 제조된 바이폴라 트랜지스터의 베이스 분산저항 ${\gamma}_{bb}$에서 발생되는 1/f 잡음을 실험 적으로 분석하였다. 공통컬렉터 잡음등가회로의 해석으로부터 $g_m^{-1}-{\gamma}_{bb}-R_B$값이 매우 작을 때는 출력측에서의 1/f 잡음은 순수하게 ${\gamma}_{bb}$에서 발생되는 잡음임을 실험을 통해서 확인할 수 있었다. $S^{1/f}_{Irbb}=K_fI_b{^{A_1}}/f$에서 $A_f=2,\;K_f{\simeq}5{\times}10^{-9}$를 얻었다. 그리고 Hooge상수 ${\alpha}$ 값은 ${\sim}10^{-3}$ 범위로 추출되었다.

• 한국재료학회지
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• 제34권2호
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• pp.105-110
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• 2024

Scanning probe microscopy (SPM) has become an indispensable tool in efforts to develop the next generation of nanoelectronic devices, given its achievable nanometer spatial resolution and highly versatile ability to measure a variety of properties. Recently a new scanning probe microscope was developed to overcome the tip degradation problem of the classic SPM. The main advantage of this new method, called Reverse tip sample (RTS) SPM, is that a single tip can be replaced by a chip containing hundreds to thousands of tips. Generally for use in RTS SPM, pyramid-shaped diamond tips are made by molding on a silicon substrate. Combining RTS SPM with Scanning spreading resistance microscopy (SSRM) using the diamond tip offers the potential to perform 3D profiling of semiconductor materials. However, damage frequently occurs to the completed tips because of the complex manufacturing process. In this work, we design, fabricate, and evaluate an RTS tip chip prototype to simplify the complex manufacturing process, prevent tip damage, and shorten manufacturing time.

• 수산해양기술연구
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• 제35권4호
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• pp.343-352
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• 1999

Because stow net being used in now is doing throwing net and hauling net through a ship's side, the work is very complicated and the fishing boat needs many seamen and it could cause a loss of lives and ship in stormy weather. We are now using small mesh size 36~500mm and it even catches young fish, so we call it the fishing gear of resource reduction type.Therefore we must make manpower reduction in automatic operation, safe operation of throwing net and hauling net in the stern and the stern-typed stow net of resource management using large mesh. And we performed three-typed model tests to examine the fishing gear. The obtained results are as follows;1. The fishing gear being used in the ship's side type stow net has inappropriate standard and arrangement of the net, resistance increase of the fishing gear and frequent breakdown of the net.2. To supplement the fault of A-typed stow net, we schemed fishing gear developed as both B-type(12-seamed net) and C-types(8-seamed net) of the stern-typed stow net. 3. In model tests, C-typed model net(mesh size 40~1,600mm) was proved good fishing gear because the resistance in accordance with the flowing speed was comparatively small and it's mouth area was broad. 4. A-typed stow net had the spreading device attached to side panel of the net, but the stern-typed stow net had the spreading device consisted of 4 lines far behind about 6m from side panel of the net mouth. In the flowing speed 2knot, the spreading condition of fishing gear was proved batter than the former.