• 대한기계학회논문집A
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• 제41권3호
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• pp.181-186
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• 2017

점진 판재 성형은 금형을 제작하지 않고 판재를 가공하는 방법으로써 빠른 시제품 제작과 소량 생산에 적합한 성형법이다. 이러한 점진 판재 성형의 공정 변수로 공구 직경, 매 스탭당 z-방향 깊이, 공구 이송속도, 공구 회전 속도 등은 성형품의 품질에 크게 영향을 미친다. 본 연구에서는 Al5052-O(0.8mm) 판재를 사용하여 Varying Wall Angle Conical Frustum 모델의 점진성형을 실시하였으며, 각각의 변수들의 조합에서 성형성을 판단하였다. 다구찌 기법을 사용하여 점진성형 변수들의 조합을 찾아내고, 그레이 관계형 최적화를 통하여 최적 성형 변수 값의 조합을 찾아 내였다. 최종 성형물의 품질은 성형성, 스프링 백, 두께 감소량을 측정하여 판단하였다. 본 연구의 실험 조건에서의 최적의 변수 조합은 공구직경 6 mm, 회전속도 60rpm, 매 스탭당 z-방향 깊이 0.3 mm, 이송속도 500 mm/min으로 판단되었다.

• 한국전기전자재료학회논문지
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• 제34권4호
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• pp.256-261
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• 2021

Indium-doped Mg_0.05Zn_0.95O thin films were deposited on glass substrates by a sol-gel method. Three types of indium precursors such as indium chloride, indium acetate, and indium nitrate were used as doping sources. Physical properties of fabricated thin films were analyzed through XRD (x-ray diffraction), UV-vis spectrophotometer, Hall effect measurement, and EDS (energy dispersive x-ray spectroscopy). All In-doped thin films grown in this study exhibited a preferred orientation of (002) with over 80% transmittance. The results showed that the Mg_0.05Zn_0.95O thin film from indium chloride as the indium precursor has higher crystallinity and transmittance with lower resistivity when compared with those from other indium precursors.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 및 기술 세미나 논문집 디스플레이 광소자
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• pp.44-44
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• 2008

To date, rubbing has been widely used to align LC molecules uniformly. Although rubbing can be simple, it has fundamental problems such as the generation of defects by dust and static electricity, and difficulty in achieving a uniform LC alignment on a large substrate. Therefore, non contact alignment has been investigated. Ion beam induced alignment method, which provides controllability, nonstop process, and high resolution display. In this study, we investigated liquid crystal (LC) alignment with ion beam (IB) that non contact alignment technique on polyimide and electro-optical characteristics of twisted nematic (TN)-liquid crystal display (LCD) on the polyimide under various ion beam angles. In this experiment, Polyimide layer was coated on glass by spin-coating and Voltage-transmittance(VT) and response time characteristics of the TN cell were measured by a LCD evaluation system. The good characteristics of the nematic liquid crystal (NLC) alignment with the ion beam exposure polyimide surface was observed. The tilt angle of NLC on the PI surface with ion beam exposure can be measured under $1^{\circ}$ for all of irradiation angles. In addition, it can be achieved the good EO properties, and residual DC property of the ion beam aligned TN cell on polyimide surface.

• 한국결정성장학회지
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• 제18권5호
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• pp.217-224
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• 2008

수평 전기로에서 $ZnIn_2Se_4$ 단결정을 합성하여 HWE(Hot Wall Epitaxy)방법으로 $ZnIn_2Se_4$ 단결정 박막을 반절연성 GaAs(100) 기판에 성장시켰다. $ZnIn_2Se_4$ 단결정 박막의 성장 조건을 증발원의 온도 $630^{\circ}C$, 기판의 온도 $400^{\circ}C$였고 성장 속도는 0.5 $\mu m/hr$였다. $ZnIn_2Se_4$ 단결정 박막의 결정성의 조사에서 10K에서 광발광(photoluminescence) 스펙트럼이 682.7nm ($1.816{\underline{1}}eV$)에서 exciton emission 스펙트럼이 가장 강하게 나타났으며, 또한 이중결정 X-선 요통곡선(DCRC)의 반폭치(FWHM)도 128 arcsec로 가장 작아 최적 성장 조건임을 알 수 있었다. Hall 효과는 van der Pauw 방법에 의해 측정되었으며, 온도에 의존하는 운반자 농노와 이동도는 293 K에서 각각 $9.41\times10^{16}/cm^{-3}$, $292cm^2/V{\cdot}s$였다. $ZnIn_2Se_4$/SI(Semi-Insulated) GaAs(100) 단결정 박막의 광흡수와 광전류 spectra를 293 K에서 10K까지 측정하였다. 광흡수 스펙트럼으로부터 band gap $E_g(T)$는 varshni공식에 따라 계산한 결과 $E_g(T)=1.8622\;eV-(5.23\times10^{-4}eV/K)T^2/(T+775.5K)$ 이었으며 광전류 스펙트럼으로부터 Hamilton matrix(Hopfield quasicubic mode)법으로 계산한 결과 crystal field splitting energy ${\Delta}cr$값이 182.7meV이며 spin-orbit energy ${\Delta} so$값은 42.6meV임을 확인하였다. 10 K일 때 광전류 봉우리들은 n= 1, 27일때 $A_{1}-$, $B_{1}-$와 $C_{27}-exciton$ 봉우리임을 알았다.

• International Journal of Industrial Entomology and Biomaterials
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• 제8권1호
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• pp.17-26
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• 2004

Pest monitoring through field surveys and surveillance helps in forecasting the population build up of pest. It reduces the load of pesticides application and forms the basis of Integrated Pest Management in sericulture. Common sampling techniques for quantifying pest populations and damage caused by them are reviewed emphasizing the need for quick and simple sampling methods. Various direct and indirect sampling methods for establishing pest populations are discussed and methods have been discussed to use indirect sampling method under IPM programme in sericulture. The use of pheromone lures and traps forms one of the important ingredients of integrated pest management, which calls for integration of all available methods in a cost effective and environmental friendly manner offering consistent efficacy. Silk-worms feed on the variety of silk host plants and spin cocoons. Each silk host plant is attacked in the field by number of insect pest species. Several pests are common to mulberry, tasar, oak tasar, muga and eri host plant but pest status and seasonal abundance differs from each crop. The key pests are serious perennially occurring persistent species which cause considerable yield loss every year on large areas and require control measure. Regular occurrence of minor pest is noticed but sudden increase in its population is not known. The occasional pests are sporadic but potential causing sufficient damage. Silk losses due to attack of all the pests have not been calculated. However, information on pest biology and ecology, and control practices being practiced is available but the period of outbreak of major pests and predators on silkworms and its host plant needs to be reinvestigated. Pest and predators forecasting based on surveillance information may provide an opportunity to minimize the losses, particularly to reduce expenditure involved in pest management.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2016년도 추계학술대회 논문집
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• pp.181-181
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• 2016

Hydrogenated microcrystalline silicon (${\mu}c-Si:H$) films have attracted much attention as materials of the bottom-cells in Si thin film tandem photovoltaics due to their low bandgap and excellent stability against light soaking. However, in PECVD, the source gas $SiH_4$ must be highly diluted by $H_2$, which eventually results in low deposition rate. Moreover, it is known that high-rate ${\mu}c-Si:H$ growth is usually accompanied by a large number of dangling-bond (DB) defects in the resulting films, which act as recombination centers for photoexcited carriers, leading to a deterioration in the device performance. During film deposition, Si nanoparticles generated in $SiH_4$ discharges can be incorporated into films, and such incorporation may have effects on film properties depending on the size, structure, and volume fraction of nanoparticles incorporated into films. Here we report experimental results on the effects of nonoparticles incorporation at the different substrate temperature studied using a multi-hollow discharge plasma CVD method in which such incorporation can be significantly suppressed in upstream region by setting the gas flow velocity high enough to drive nanoparticles toward the downstream region. All experiments were performed with the multi-hollow discharge plasma CVD reactor at RT, 100, and $250^{\circ}C$, respectively. The gas flow rate ratio of $SiH_4$ to $H_2$ was 0.997. The total gas pressure P was kept at 2 Torr. The discharge frequency and power were 60 MHz, 180 W, respectively. Crystallinity Xc of resulting films was evaluated using Raman spectra. The defect densities of the films were measured with electron spin resonance (ESR). The defect density of fims deposited in the downstream region (with nonoparticles) is higher defect density than that in the upstream region (without nanoparticles) at low substrate temperature of RT and $100^{\circ}C$. This result indicates that nanoparticle incorporation can change considerably their film properties depending on the substrate temperature.

• 한국전기전자재료학회논문지
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• 제13권6호
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• pp.509-513
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• 2000

The physical and electrical characteristics of MgO and Pt thin-films on it deposited by reactive sputtering and rf magnetron sputtering respectively were analyzed with annealing temperature and time by four point probe SEM and XRD. Under annealing conditions of 100$0^{\circ}C$ and 2 hr, MgO thin-film had the properties of improving Pt adhesion to SiO$_2$and insulation without chemical reaction to Pt thin-film and the sheet resistivity and the resistivity of Pt thin-film deposited on it were 0.1288 Ω/ and 12.88 $\mu$$\Omega$.cm respectively. We made Pt resistance pattern on SiO$_2$/Si substrate by life-off method and fabricated Pt thin-film type microheater for thermal microsensors by Pt-wire Pt-paste and SOG(spin-on-glass). In the temperature range of 25~40$0^{\circ}C$ we estimated TCR(temperature coefficient of resistance) and resistance ratio of thin-film type Pt-RTD(resistance thermometer device). We obtained TCR value of 3927 ppm/$^{\circ}C$ close to the bulk Pt value. Resistance values were varied linearly within the range of the measurement temperature. The thermal characteristics of fabricated thin-films type Pt micorheater were analyzed with Pt-RTD integrated on the same substrate. The heating temperature of Pt microheater could be up to 40$0^{\circ}C$ with 1.5 watts of the heating power.

• 한국세라믹학회지
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• 제41권1호
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• pp.13-18
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• 2004

$La_{0.5}Sr_{0.5}CoO_3$ (LSCO) electrodes were prepared on ferroelectric $Sr_{0.9}Bi_{2.1}Ta_2O_9$(SBT) thin films by spin coating method using photosensitive sol-gel solution. Self-patterning technique of photosensitive sol-gel solution has advantages such as simple manufacturing process compared to photoresist/dry etching process. Lanthanum(III) 2-methoxyethoxide, Stronitium diethoxide. Cobalu(II)2-methoxyethoxide were used as starting materials for LSCO electrode. UV irradiation on LSCO thin films lead to decrease solubility by M-O-M bond formation and the solubility difference allows us to obtain self-patternine. There was little composition change of the LSCO thin films between before leaching and after leaching in 2-methoxyethanol. The lowest resistivity of LSCO thin films deposited on $SiO_2$/Si substrate was $1.1{\times}10^{-2}{\Omega}cm$ when the thin film was ennealed at $740^{\circ}C$. The values of Pr/Ps and 2Pr of LSCO/SBT/Pt capacitor on the applied voltage of 5V were 0.51, 8.89 ${\mu}C/cm^2$, respectively.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2011년도 자성 및 자성재료 국제학술대회
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• pp.14-14
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• 2011

Limited understanding of the surface properties of $Pt_3Ni$ for the oxygen reduction reaction (ORR) in polymer electrolyte membrane fuel cell (PEMFC) has motivated the study of magnetic properties and electronic structures of Pt segregated $Pt_3Ni$ (111) surface during adsorption of oxygen molecule on it. The first principle method based on density functional theory (DFT) is carried out. Nonmagnetic Pt has induced magnetic moment due to strong hybridization between Ni 3d and Pt 5d. It is found that an oxygen molecule prefers bridge site with Pt rich subsurface environment for adsorption on the surface of Pt segregated $Pt_3Ni$ (111). It is seen that there is very small charge transfer from $O_2$ to Pt. The curve of energy versus magnetic moment of the oxygen explains the magnetic moments in transition states. We found the dissociation barrier of 1.07eV significantly higher than dissociation barrier 0.77eV on Pt (111) suggesting that the dissociation is more difficult on Pt segregated $Pt_3Ni$ (111) surface. The spin polarized densities of states are presented in order to understand electronic structures of Pt and $O_2$ during the adsorption in detail.

• 접착 및 계면
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• 제11권4호
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• pp.162-167
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• 2010

본 연구에서는 셀룰로스계 섬유인 황마(jute)의 화학적 특성 및 열적 특성에 미치는 전자빔조사의 영향을 원소분석, ESR분석, ATR-FTIR 분광분석, 열중량분석 그리고 열기계분석을 통하여 탐구하였다. 전자빔 조사는 전자빔터널 내에서 콘베이어 카트를 이용한 연속식 방법에 의해 2~100 kGy까지 다양한 세기의 전자빔이 황마섬유다발에 일정하게 행하였다. 전자빔 처리는 황마섬유의 화학조성을 다소 변화시켰으며, 전자빔세기가 커질수록 황마섬유에 형성된 라디칼이 증가하는 것으로 확인되었다. 그러나 전자빔 조사는 황마섬유표면의 화학관능기를 크게 변화시키지 않는 것으로 판단되었다. 또한 전자빔 조사는 황마섬유의 열안정성과 열수축/팽창 거동에 영향을 주었으며, 그 거동은 전자빔세기에 의존하였다.