• Journal of Korean Ophthalmic Optics Society
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• v.3 no.1
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• pp.223-228
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• 1998

Glass films of $SiO_2-TiO_2-M_xO_y$ (M = Co, Cr or Cu) have been prepared on soda-lime-silica slide glasses by the chemical solution method using a spin-coating technique. Commercially available tetraethyl orthosilicate, titanium trichloride, and cobalt-, chromium- and copper-nitrates were used as starting materials. No crystalline segregations of $Co_3O_4$, $Cr_2O_3$ and CuO were observed by X-ray diffraction ${\theta}-2{\theta}$ scans. From the optical transmission analysis, cobalt existed as $ Co^{2+}$ in tetrahedral coordination, chromium as $Cr^{6+}$ in tetrahedral symmetry and copper as $Cu^{2+}$ in octahedral coordination. Films with a crack-free and no texture exhibited homogeneous interfaces between the films and the substrates along the cross-section.

• Journal of Korean Ophthalmic Optics Society
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• v.3 no.1
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• pp.217-222
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• 1998

Coating films of $SiO_2-TiO_2-AgO$ have been prepared on soda-lime-silica slide glasses and single crystal silicon wafer by the sol-gel method using a spin-coating technique. Commercially available tetraethyl orthosilicate, titanium trichloride, and silver-nitrates were used as starting materials. The heat treatment temperature of this coating films was $500^{\circ}C$ properly, obtained from TG-DTA result. The films with thickness of 310 nm were prepared by 5 times coating. In the case of l0 mol% AgO, the film showed a crack-free and smooth surface, but the higher Ago content exhibited the more pin hole and the segregated cluster of AgO. The IR absorbance of the films decreased in the range of 400 nm to 700 nm with the increase of annealing temperature. And the reflectance of the coating films decreased and the color was changed light yellow to white yellow with the increase of Ago content.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.171-174
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• 2004

The stochiometric $AgGaSe_2$ polycrystalline mixture of evaporating materials for the $AgGaSe_2$ single crystal thin film was prepared from horizontal furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal and semi-insulating GaAs(100) wafer were used as source material and substrate for the Hot Wall Epitaxy (HWE) system, respectively. The source and substrate temperature were fixed at $630^{\circ}C$ and $420^{\circ}C$, respectively. The thickness of grown single crystal thin films is $2.1{\mu}m$. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of $AgGaSe_2$ single crystal thin films measured from Hall effect by van der Pauw method are $4.89{\times}10^{17}\;cm^{-3},\;129cm^2/V{\cdot}s$ at 293K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the $AgGaSe_2$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}S_o$ and the crystal field splitting ${\Delta}C_r$ were 0.1762 eV and 0.2494 eV at 10 K, respectively. From the photoluminescence measurement of $AgGaSe_2$ single crystal thin film, we observed free excition $(E_X)$ observable only in high quality crystal and neutral bound exciton $(D^o,X)$ having very strong peak intensity And, the full width at half maximum and binding energy of neutral donor bound excition were 8 meV and 14.1 meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.

• Bulletin of the Korean Chemical Society
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• v.32 no.2
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• pp.559-565
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• 2011

The following noble series of statistical copolymers, poly[(2-(3-thienyl)ethanol n-butoxycarbonylmethylurethane)-co-3-hexylthiophene] (PURET-co-P3HT), were synthesized by the chemical dehydrogenation method using anhydrous $FeCl_3$. The structure and electro-optical properties of these copolymers were characterized using $^1H$-NMR, UV-visible spectroscopy, elemental analysis, GPC, DSC, TGA, photoluminescence (PL), and cyclic voltammetry (CV). The statistical copolymers, PURET-co-P3HT (1:0, 2:1, 1:1, 1:2, 1:3), were soluble in common organic solvents and easily spin coated onto indium-tin oxide (ITO) coated glass substrates. Hybrid bulk heterojunction photovoltaic cells with an ITO/G-PEDOT/PURET-co-P3HT:PCBM:Ag nanowires/$TiO_x$/Al configuration were fabricated, and the photovoltaic cells using PURET-co-P3HT (1:2) showed the best photovoltaic performance compared with those using PURET-co-P3HT (1:0, 2:1, 1:1, 1:3). The optimal hybrid bulk heterojunction photovoltaic cell exhibits a power conversion efficiency (PCE) of 1.58% ($V_{oc}$ = 0.82 V, $J_{sc}$ = 5.58, FF = 0.35) with PURET-co-P3HT (1:2) measured by using an AM 1.5 G irradiation (100 mW/$cm^2$) on an Oriel Xenon solar simulator (Oriel 300 W).

• Journal of the Korean Magnetics Society
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• v.15 no.3
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• pp.177-180
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• 2005

Ferroelectric $LiTaO_3$ single crystals, grown by the Czochralski method, were thermally treated at temperature $1000^{\circ}C\;and\;1100^{\circ}C$. Electron paramagnetic resonance (EPR) study of stoichiometric $LiTaO_3$ and thermally treated $LiTaO_3$ crystals has been investigated by employing an X-band spectrometer. From the $Fe^{3+}$ EPR spectra, it turned out that there is no change of site location and local site symmetry around $Fe^{3+}$ impurity ion between stoichiometric and thermally treated $LiTaO_3$ single crystals. We confirmed that the ionic state of $Fe^{3+}$ ion changed after thermal treatment. The EPR parameters of $Fe^{3+}$ ion in $LiTaO_3$ single crystals are determined with effective spin Hamiltonian.

• Korean Journal of Materials Research
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• v.9 no.8
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• pp.854-857
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• 1999

The properties of Fe-Se-Te system(FeSe(sub)1-xTe(sub)x, x=0.2, 0.5, 0.8) have been studied by means of the X-ray diffraction method and Mossbauer spectroscopy. The results of X-ray diffraction patterns show that three samples have the ixed structure of tetragonal PbO and a small amount of hexagonal NiAs structure respectively. For x=0.5 the lattice parameters of tetragonal PbO structure are a=3.795$\AA$, c=5.896$\AA$ and c/a=1.55. The Mossbauer spectra were obtained with the various temperature variation and than they do not exhibit magnetic hyperfine structure but show a strong doublet. The values of observed isomer shift and quadrupole splitting suggest that the irons of all samples exist in the +2 oxidation state with a major covalent contribution. The temperature dependence of isomer shift values for x=0.8 seems to be originated from the second order Doppler effect.

• Journal of Food Hygiene and Safety
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• v.24 no.4
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• pp.357-367
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• 2009

This study was carried out to investigate the current status of pesticide residues in 3,735 agricultural products in the northern area of Seoul from January to December in 2008. 3,735 samples, comprising 119 types of agricultrural products were assessed via a multiresidue method to detect 260 pesticides. Pesticide residues were detected in 19.7% (737 of 3,735 samples), and the rate at which the detected residues violated the maximum residue levels(MRLs) of the Korean Food Code was 3.2% (121 of 3,735 samples). Pesticide residues were detected in 72 spin-aches, 64 peppers, 45 sweet peppers, 40 perilla leaves, 38 korean cabbages and 37 dried agricultural products. The samples that violated the MRLs included 14 perilla leaves, 13 spinaches, 12 leek, 6 lettuces(leaf), 6 chards and 6 gyeojchaes. Procymidone, endosulfan, chlorfenapyr, cypermethrin, bifenthrin, tebuconazole and fenvalerate were all frequently observed. Procymidone, endosulfan, dimethomorph and diniconazole were the pesticides most frequently detected at levels that violated the Korean Food Code MRLs.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.158-158
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• 2012

A new kind of organic-inorganic hybrid polymer, poly(tetraphenyl)silole siloxane (PSS), was invented and synthesized for realization of its unique charge trap properties. The organic portions consisting of (tetraphenyl)silole rings are responsible for electron trapping owing to their low-lying LUMO, while the Si-O-Si inorganic linkages of high HOMO-LUMO gap provide the intrachain energy barrier for controlling electron transport. Such an alternation of the organic and inorganic moieties in a polymer may give an interesting quantum well electronic structure in a molecule. The PSS thin film was fabricated by spin-coating of the PSS solution in THF organic solvent onto Si-wafer substrates and curing. The electron trapping of the PSS thin films was confirmed by the capacitance-voltage (C-V) measurements performed within the metal-insulator-semiconductor (MIS) device structure. And the quantum well electronic structure of the PSS thin film, which was thought to be the origin of the electron trapping, was investigated by a combination of theoretical and experimental methods: density functional theory (DFT) calculations in Gaussian03 package and spectroscopic techniques such as near edge X-ray absorption fine structure spectroscopy (NEXAFS) and photoemission spectroscopy (PES). The electron trapping properties of the PSS thin film of quantum well structure are closely related to intra- and inter-polymer chain electron transports. Among them, the intra-chain electron transport was theoretically studied using the Atomistix Toolkit (ATK) software based on the non-equilibrium Green's function (NEGF) method in conjunction with the DFT.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.658-658
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• 2013

Graphene is an attractive material for various device applications due to great electrical properties and chemical properties. However, lack of band gap is significant hurdle of graphene for future electrical device applications. In the past few years, several methods have been attempted to open and tune a band gap of graphene. For example, researchers try to fabricate graphene nanoribbon (GNR) using various templates or unzip the carbon nanotubes itself. However, these methods generate small driving currents or transconductances because of the large amount of scattering source at edge of GNRs. At 2009, Bai et al. introduced graphene nanomesh (GNM) structures which can open the band gap of large area graphene at room temperature with high current. However, this method is complex and only small area is possible. For practical applications, it needs more simple and large scale process. Herein, we introduce a photosensitive graphene device fabrication using CdSe QD coated nano-porous graphene (NPG). In our experiment, NPG was fabricated by thin film anodic aluminum oxide (AAO) film as an etching mask. First of all, we transfer the AAO on the graphene. And then, we etch the graphene using O2 reactive ion etching (RIE). Finally, we fabricate graphene device thorough photolithography process. We can control the length of NPG neckwidth from AAO pore widening time and RIE etching time. And we can increase size of NPG as large as 2 $cm^2$. Thin CdSe QD layer was deposited by spin coatingprocess. We carried out NPG structure by using field emission scanning electron microscopy (FE-SEM). And device measurements were done by Keithley 4200 SCS with 532 nm laser beam (5 mW) irradiation.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.39 no.2
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• pp.11-16
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• 2002

In this paper, single-layer white organic light emitting device was fabricated on ITO glass substrate using PVK as host, Bu-PBD as electron transport layer, Nile Red, Coumarin 6, TPB as red, green, blue color fluorescent dyes. The red, green, blue organic light emitting devices were fabricated respectively. After the characteristic analysis of each color device, the white organic light emitting device was fabricated with optimized condition of each color device by spin coating method. we obtained white emission CIE coordination of (0.32, 0.34) and luminescence of 785cd/$m^2$ at driving voltage of 20V with condition of PVK(70wt%), Bu-PBD(30wt%), Nile Red(0.015mol%), Coumarin 6(0.04mol%), TPB(3mol%).