• Korean Chemical Engineering Research
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• v.45 no.4
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• pp.335-339
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• 2007

In order to overcome the problem of poor hardness of transparent polycarbonate (PC) sheets, organic-inorganic hybrid hard coating solutions, which show a high refractive index above 1.58, were made by the sol-gel method. These hybrid coating solutions were obtained from mixture of titanium tetraisopropoxide (TTIP), and (3-glycidoxypropyl)trimethoxysilane (GPTMS). The PC sheets were spin-coated, and cured at $120^{\circ}C$ for 2 hr. Change of refractive index in the range of 1.53-1.61 was obtained by varying the GPTMS content. The refractive index of the coated film decreased with increasing the GPTMS content, while the pencil hardness of the coated film was found to increase with increasing the GPTMS content.

• Bulletin of the Korean Chemical Society
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• v.28 no.12
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• pp.2333-2337
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• 2007

Nanoporous TiO2 and ZrO2 thin films were spin-coated using a surfactant-templated approach from Pluronic P123 (EO20PO70EO20) as the templating agent, titanium alkoxide (Ti(OC4H9)4) as the inorganic precursor, and butanol as a the solvent. The control of the electronic structure of TiO2 is crucial for its various applications. We found that the band gap of the hybrid nanoporous thin films can be easily tuned by adding an acetylacetonestabilized Zr(OC4H9)4 precursor to the precursor solution of Ti(OC4H9)4. Pores with a diameter of 5 nm-10 nm were randomly dispersed and partially connected to each other inside the films. TiO2 and ZrO2 thin films have an anatase structure and tetragonal structure, respectively, while the TiO2-ZrO2 hybrid film exhibited no crystallinity. The refractive index was significantly changed by varying the atomic ratio of titanium to zirconium. The band gap for the nanoporous TiO2 was estimated to 3.43 eV and that for the TiO2-ZrO2 hybrid film was 3.61 eV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.260-261
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• 2005

The heterolayered thick/thin structure consisting of $Pb(Zr_{0.52}Ti_{0.48})O_3$ and $BaTiO_3(BT)$ were fabricated by a sol-gel process. PZT powders, prepared by the sol-gel method, were mixed with an organic vehicle and the PZT thick films were fabricated by the screen printing techniques on alumina substrate with Pt electrodes. The microstructural and dielectric characteristics of the stacked heterolayered PZT/BT/PZT films were investigated by varying the number of coating $BaTiO_3$ layers. The existence of a $BaTiO_3$ layer between the PZT thick films of the tri-layer $Pb(Zr_xTi_{1-x})O_3/BaTiO_3/Pb(Zr_xTi_{1-x})O_3$thick/thin/thick film can greatly improve the leakage current properties of the PZT thick films. The average thickness of a PZT(5248)/$BaTiO_3$ heterolayered thick/thin film was 25$\mu$m. The relative dielectric constant and dielectric loss of the PZT(5248)/$BaTiO_3$-3 heterolayered thin film coated three times were 1087 and 1.00% at 1[MHz].

• Journal of the Korean Society for Precision Engineering
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• v.27 no.9
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• pp.11-15
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• 2010

In this study, to fabricate a low-resistance and high optical transparency electrode film, the following steps were performed: the design and manufacture of electroforming stamp, the fabrication of a thermal roll-imprinted polycarbonate (PC) patterned films, the filled low-resistance Ag paste using doctor blade process on patterned PC films and spin coating by conductive polymers. As a result of PC films imprinted line width of $26.69{\pm}2\;{\mu}m$, channel length of $247.57{\pm}2\;{\mu}m$, and pattern depth of $7.54{\pm}0.2\;{\mu}m$. Ag paste to fill part of the patterned film with conductive polymer coating and then the following parameters were obtained: a sheet resistance of $11.1\;{\Omega}/sq$ optical transparency values at a wavelength of 550 nm was 80.31 %.

• Journal of Sensor Science and Technology
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• v.19 no.3
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• pp.202-208
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• 2010

This study examined the dependency of crystalline orientation and electric properties of sol-gel PZT film on hydrolysis, a $PbTiO_3$ seed layer and a concentration of sol-gel solution. The PZT thin films were prepared by using 2-Methoxyethanol-based sol-gel method and spin-coating on Pt/Ti/$SiO_2$/Si substrates. The 1-${\mu}m$-thick PZT films were coated and then fired in a furnace by direct insert method. The highly (111) oriented PZT film of pure perovskite structure could be obtained. We could control the degree of orientation by various parameters such as hydrolysis, a $PbTiO_3$ seed layer and a concentration of sol-gel solution. The highest measured remanent polarization, dielectric constant and piezoelectric coefficient are $24.16\;{\mu}C/cm^2$, 2808, and 159 pC/N, respectively.

• Macromolecular Research
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• v.16 no.8
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• pp.725-733
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• 2008

Polyimide (PI) multilayer thin films were prepared by spin-coating from a poly(amic acid) (PAA) and poly(amic acid) ammonium salt (PAAS). PI was prepared from pyromellitic dianhydride (PMDA) and 4,4'-oxydianiline (ODA) PAA. Different compositions of PAAS were prepared by incorporating triethylamine (TEA) into PMDA-ODA PAA in dimethylacetamide. PI multilayer thin films were spin-coated from PMDA-ODA PAA and PAAS. The PAAS comprising cationic and anionic moieties were spherical with a particle size of $20{\sim}40\;nm$. Some particles showed layers with ammonium salts, despite poor ordering. Too much salt obstructed the interaction between the polymer chains and caused phase separation. A small amount of salt did not affect the interactions of the interlayer structure but did interrupt the stacking between chains. Thermogravimetric analysis (TGA) showed that the average decomposition temperature of the thin films was $611^{\circ}C$. All the films showed almost single-step, thermal decomposition behavior. The nanostructure of the multilayer thin films was confirmed by X -ray reflectivity (XRR). The LF 43 film, which was prepared with a 4:3 molar ratio of PMDA and ODA, was comprised of uniformly spherical PAAS particles that influenced the nanostructure of the interlayer by increasing the interaction forces. This result was supported by the atomic force microscopy (AFM) data. It was concluded that the relationship between the uniformity of the PAAS particle shapes and the interaction between the layers affected the optical and thermal properties of PI layered films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.6
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• pp.504-510
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• 2002

Recently, thin film capacitors of high dielectric constant and low leakage current are applied to integrated devices. In this study, (Ba, Sr)$TiO_3$ (BST) thin films for low cost were prepared by Sol-Gel method. BST solution was spin-coated on Pt/$SiO_2$/Si substrate at 4,000 rpm for 10 seconds. Coating process was repeated 3 times and then sintered at $700^{\circ}C$ for 30 minutes. Structural and electrical characteristics of each specimen were analyzed by TG-DTA, SEM, fractal phenomenon, voltage-current and dielectric factor. Thickness of BST ceramics thin films are about 2,600~2,800 ${\AA}$ at depositing 3 times. Dielectric constant of thin films was decreased in 1 kHz~1 MHz. Dielectric constant and loss to frequency were 250 and 0.02 in $(Ba_{0.7}Sr_{0.3})TiO_3$ (BST3). Leakage current of BST3 was $10^{-9}\sim10^{-11}$/ A under 3 V.

• Korea-Australia Rheology Journal
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• v.15 no.1
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• pp.1-7
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• 2003

A new method is introduced to build up organic/organic multilayer films composed of cationic poly(allylamine hydrochloride) (PAH) and negatively charged poly (sodium 4-styrenesulfonate) (PSS) using the spinning process. The adsorption process is governed by both the viscous force induced by fast solvent elimination and the electrostatic interaction between oppositely charged species. On the other hand, the centrifugal and air shear forces applied by the spinning process significantly enhances desorption of weakly bound polyelectrolyte chains and also induce the planarization of the adsorbed polyelectrolyte layer. The film thickness per bilayer adsorbed by the conventional dipping process and the spinning process was found to be about 4 ${\AA}$ and 24 ${\AA}$, respectively. The surface of the multilayer films prepared with the spinning process is quite homogeneous and smooth. Also, a new approach to create multilayer ultrathin films with well-defined micropatterns in a short process time is Introduced. To achieve such micropatterns with high line resolution in organic multilayer films, microfluidic channels were combined with the convective self-assembly process employing both hydrogen bonding and electrostatic intermolecular interactions. The channels were initially filled with polymer solution by capillary pressure and the residual solution was then removed by the .spinning process.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1474-1475
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• 2008

본 논문에서는 nanoporous Pt (Platinum) 전극을 이용한 무효소 혈당센서의 생체 적합성 및 전류응답 특성 향상을 위해 다양한 패키징 방법이 제안되었다. 생체적합성을 갖는 Nafion 멤브레인을 dipping, spin coating, chemical bonding 방법으로 패키징 한 후, 다양한 글루코오스 농도의 혈장, 전혈에서 특성을 분석, 비교하였다. 단백질 등이 포함되지 않은 환경에서 spin coating 방법으로 패키징한 센서의 전류응답 특성은 가장 좋았지만, 혈장 및 전혈에서는 dipping, chemical bonding 방법으로 패키징한 센서의 전류응답 특성에 미치지 못했다. Nafion film을 센서와 chemical bonding한 센서의 혈장에서 sensitivity 는 0.32 ${\mu}A/mM{\cdot}cm^2$ 이었다. 한편, 전혈에서 bare 센서가 급격한 bio-fouling 현상을 보이는 반면 패키징한 센서는 글루코오스 농도에 따라 일정한 전류변화를 보였다. 이는 Nafion을 이용하여 패키징한 무효소 혈당 센서가 생체환경에 적합할 뿐 아니라 생체이식형 및 연속 측정 가능한 시스템에 적용 가능함을 보여준다.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.918-920
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• 1999

Recently, the ceramics of high permittivity are applied to DRAM and FRAM. In this study, (Ba, Sr)$TiO_3$ (BST) ceramics thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on Pt/$SiO_2$/Si substrate at 4000[rpm] for 10 seconds. Coating process was repeated 3 times and then sintered at $750[^{\circ}C]$ for 30 minutes. Each specimen was analyzed structure and electrical characteristics. Thickness of BST ceramics thin films are about $2000[\AA]$. Dielectric constant and loss of thin films was little decreased at $1[kHz]{\sim}1[MHz]$. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. In accordance with applied voltage, property of leakage current was stability when the was $0{\sim}3$[V]. According to voltage, leakage current was increased exponentially at $4{\sim}7$[V].