• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.665-668
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• 1999

Thin films of Pb(Zr,Ti)O$_3$ were fabricated by means of the sol-gel spin-coating method and the multi-coating of eight coating numbers. The thin films were dried on the temperature range of 250 ~ 400($^{\circ}C$), whenever the specimens were dried after each coating Processing. The fabricated ferroelectric thin films of lead zirconate titanate(PZT) were treated with the rapid thermal annealing(RTA) at 650($^{\circ}C$),or 3(min), and direct insertion thermal annealing(DITA) at 650($^{\circ}C$), for 30(min). The measured properties of dielectric thin films were following: The good results of dielectric properties were shown by the RTA specimen. The saturation polarization(Ps), remanent polarization(Pr), coercive field (Ec), dielectric constant and dielectric loss factor of the RTA specimen were estimated to be about 27.1[ $\mu$ C/$\textrm{cm}^2$], 13.7[ $\mu$ C/$\textrm{cm}^2$], 55.6(kV/cm), 786 and 6.4(%) respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.7
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• pp.592-597
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• 2000

In this study (B $a_{0.5}$/S $r_{0.5}$)Ti $O_3$[BST(50/50)] ceramic thin films were prepared by the Sol-Gel method BST(50/50) stock solution was made and spin-coated on the Indium Tin Oxide(ITO)/glass substrate at 4000 rpm for 30 seconds. The coated films were dried at 35$0^{\circ}C$ for 10 minutes and annealed at 650~75$0^{\circ}C$ for 1 hour. The microstructural properties of the BST(50/50) thin film were studied by the XRD and AFM. The ferroelectric perovskite phase was formed at the annealing condition of 75$0^{\circ}C$ for 1 hour. Dielectric constant and loss of this thin were 370, 3.7% at room temperature respectively. The polarization switching voltage showed the good value of 3V. The leakage current density of the BST(50/50) thin film was 10$^{-7A}$c $m^2$with applied voltage of 1.5V. BST(50/50) thin film capacitors having good dielectric and electrical properties are expecting for the application to the dielectric material of DRAM.RAM.M.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.455-458
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• 2001

The thin films of high permitivity in ferroelectric materials using a capacitor are applied to DRAMs and FRAMs. (Ba, Sr)TiO$_3$ thin films as ferroelectric materials were prepared by the sol-gel method and made by spin-coating on the Pt/Ti/SiO$_2$/Si substrate at 4,700 [rpm] for 10 seconds. The devices of BST thin films to composite (Ba$\_$0.7/Sr$\_$0.3/)TiO$_3$ were fabricated by changing of the depositing layer number on Pt/Ti/SiO$_2$/Si substrate. The thin film capacitor to be ferroelectric devices was investigated by structural and electrical properties. The thickness of BST thin films at each coating numbers 3, 4 and 5 times was 2500[${\AA}$], 3500[${\AA}$], 3800[${\AA}$]. The dielectric factor of thin film when the coating numbers were 3, 4 and 5 times was 190, 400 and 460 on frequency 1[MHz]. The dielectric loss of BST thin film was linearly increased by increasing of the specimen area.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1418-1419
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• 2006

PZT(80/20) powder was prepared by a sol-gel method and PZT thick films were fabricated by the screen-printing method on the alumina substrates. The coating and drying procedure was repeated 4 times. And then the PZT(20/80) precursor solution was spin-coated on the multilayered thick films. A concentration of a coating solution was 0.5 mol/L and the number of coating was repeated from 0 to 6. The porosity of the thick films was decreased with increasing the number of coatings and the PZT thick films with 6-times coated showed the dense microstructure and thickness of about 60-65 ${\mu}m$. All PZT thick films showed the typical XRD patterns of a typical perovskite polycrystalline structure. The relative dielectric constant and the dielectric loss of the PZT-6 thick film were 275 and 3.5, respectively. And the PZT-6 film shows the remanent polarization of 22.1 $C/cm^2$ and coercive field of 13.7 kV/cm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.809-812
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• 2004

(Pb,Sr)TiO3 (PST) thin films were fabricated by using the alkoxide-based sol-gel method. The PST stock solution was made and then spin-coated onto a PUTi/SiO2/Si substrate. The coating and drying procedures were repeated several times, and the PST thin films were sintered at 450-650 C for 1 h. All PST thin films showed dense and homogeneous structures without the presence of any rosette structure. The thicknesses of the PST thin films were approximately 200 nm. The dielectric constant and the dielectric loss of the PST thin films sintered at 550 C were about 404 and 0.0023, respectively. The leakage current density of the PST thin film sintered at 550 C was 3.13 x 10-8 A/cm2 at 1 V.

• Journal of the Korean Physical Society
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• v.73 no.10
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• pp.1473-1478
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• 2018

In this study, we have developed a simple and cost-effective method to prevent edge bead formation by covering the edge of a chip-level substrate with heat-resistant tape during patterning using SU-8. Edge beads are a fundamental problem in photoresists and are particularly notable in high-viscosity fluids and thick coatings. Edge beads can give rise to an air gap between the substrate and the patterning mask during UV exposure, which results in non-uniform patterns. Furthermore, the sample may break since the edge bead is in contact with the mask. In particular, the SU-8 coating thickness of the chip-level substrates used in MEMS or BioMEMS may not be properly controlled because of the presence of edge beads. The proposed method to solve the edge bead problem can be easily and economically utilized without the need for a special device or chemicals. This method is simple and prevents edge bead formation on the sample substrate. Despite the small loss in the taping area, the uniformity of the SU-8 coating is improved from 50.9% to 5.6%.

• Journal of Ceramic Processing Research
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• v.20 no.6
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• pp.603-608
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• 2019

In this study, the multilayered thin films of (Ba,Sr)TiO3/K(Ta,Nb)O3 were fabricated by the sol-gel and spin coating methods, and their structural and electrical properties were investigated. The specimen showed polycrystalline X-ray diffraction (XRD) characteristics with a tetragonal structure. The average grain size and film thickness for one coating were about 30~40nm and 60nm, respectively. The phase transition temperature of specimen was lower than 10 ℃. The dielectric constant and loss at 20 ℃ of the specimen coated six times were 1,231 and 0.69, respectively. The rate of change in dielectric constant at an applied direct current (DC) voltage of the six times coated thin films was 17.3%/V. The electrocaloric effect was the highest around the temperature at which the remanent polarization rapidly changed. When an electric field of 660kV/cm was applied to the triply coated thin films, the highest electrocaloric property of 4.41 ℃ was observed.

• Journal of Ceramic Processing Research
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• v.20 no.4
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• pp.395-400
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• 2019

This study was conducted on the structural and electrical properties of (Ba0.7Sr0.3)TiO3 thin films prepared by the sol-gel and spin-coating methods in order to investigate their applicability to electrocaloric devices. All specimens showed a tetragonal crystal structure and lattice constants of a = 3.972 Å, c = 3.970 Å. The mean grain size of specimens sintered at 800 ℃ was about 30 nm, and the average thickness of 5 times coated specimens was 304~311 nm. In the specimen sintered at 750 ℃, The relative dielectric constant and loss of specimens measured at 20 ℃ were 230 and 0.130, respectively, while dependence of the dielectric constant on unit DC voltage was -8.163 %/V. The remanent polarization and coercive fields were 95.5 μC/㎠ and 161.3 kV/cm at 21 ℃, respectively. And, the highest electrocaloric property of 2.69 ℃ was observed when the electric field of 330 kV/cm was applied.

• Journal of Ceramic Processing Research
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• v.21 no.6
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• pp.725-730
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• 2020

This study investigated the structural and electrical properties of thin K(Ta_0.6Nb_0.4)O₃ films for their applicability to electrocaloric devices. Both of the sol-gel and spin coating methods were used to fabricate thin films. Those sintered at 650 ℃ showed a KTN phase with pyrochlore of K₂Ta₂O₆, but those sintered at 750 ℃ showed pure polycrystalline phase without a pyrochlore phase. The lattice constants observed were a= 3.990nm. The dielectric constant rapidly decreased due to decrease in polarization of space charge approximately at an applied frequency of 10 kHz. The dielectric constant and loss at 30 ℃ of the thin films sintered at 750 ℃ were 3,617 and 0.264. The dielectric constant of the specimen sintered at 750 ℃ decreased to about -8.27 %/V according to the applied DC field. The remanent polarization and coercive field at 36 ℃ of the specimen sintered at 750 ℃ were 20.0 µC/cm² and 122.6 kV/cm. When the electric field of 247 kV/cm was applied to the specimen sintered at 750 ℃, the highest electrocaloric property of 3.02 ℃ was obtained.

• Journal of Ceramic Processing Research
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• v.23 no.5
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• pp.583-588
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• 2022

KTN/BFO multilayer films were manufactured using the spin-coating method on Pt/Ti/SiO2/Si substrate with KTN(62/38) andBFO metal alkoxide solutions. The mean thickness of the multilayer films was about 420-450 nm. A rough interfacial layerwas observed at the interface between the lower substrate and the film when sintered at 650oC. Dense microstructures withoutpores inside of the films were shown via TEM analysis, and an interface between the KTN and BFO layers was clearlyobserved. The Curie temperature was about 16oC. Dielectric constant and dielectric loss were 1380 and 0.384 at 20oC,respectively. Coercive field of the 2-layer and 6-layer films were 72.6 and 80.4 kV/cm at room temperature, respectively. ΔTand EC coefficient of the 6-layer films sintered at 630oC were 1.96oC and 0.13×10-6 oCmV-1, respectively.