• Proceedings of the Korean Magnestics Society Conference
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• 2009.05a
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• pp.156-157
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• 2009

• Proceedings of the Korean Magnestics Society Conference
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• 2010.06a
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• pp.51-52
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• 2010

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.160.2-160.2
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• 2007

• Journal of Magnetics
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• v.5 no.2
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• pp.50-54
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• 2000

NiMn-pinned spin valve films consisting of a layered glass/NiFe/Co/Cu/Co/NiFe/NiMn/Ta stack were made by do magnetron sputtering. After deposition, the structure was annealed in a series of cycles each including three hours at $220^\circ C, 2\times10^{-6}$ Torr, in a field of 350 Oe, to create an ordered antiferromagnetic structure in the NiMn layer and produce a strong unidirectional pinning field in the pinned magnetic layer, Optimum spin valve properties were obtained after seven annealing cycles, or 21 hours at $220^\circ C$, and were : MR ratio 1%, exchange coupling field 620 Oe, and coercivity of pinned layer 250 Oe. The exchange coupling field remained constant up to an operating temperature of $175^\circ C$, and the blocking temperature was about $380^\circ C$.

• Electrical & Electronic Materials
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• v.9 no.10
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• pp.1060-1065
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• 1996

We have studied the magnetoresistance phenomena on spin valve thin films of antiferromagnetic NiO/CoO. Interlayer coupling oscillates between the antiferrocoupling and ferrocoupling with the variation of Cu thickness. The exchange coupling strength between NiO (antiferromagnetic) and NiFe(ferromagnetic) as a function of NiO texture and interface roughness is investigated by CoO insertion. CoO has significantly higher anisotropy in the (111) plane and interface roughness. It seems that the MR-ratio is increased by CoO inserted films. From the AFM and XRD data, the increase of MR-ratio and exchange field is influenced by the roughness of CoO.

• Journal of the Korean Physical Society
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• v.73 no.10
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• pp.1458-1465
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• 2018

We present a constructed setup for polarizing $^{129}Xe$ noble gas. Hyperpolarized $^{129}Xe$ has been obtained via spin exchange with an optically pumped rubidium vapor. Optical pumping is based on polarizing the valence electron of rubidium by the resonant absorption of a circularly polarized laser light. The magnetic field of 30 G was used for obtaining $^{129}Xe$ polarization. The apparatus for detecting polarization is a nuclear magnetic resonance spectrometer. The highest $^{129}Xe$ polarization of 54% has been obtained using 60 W circularly polarized laser light with wavelength of 794.7 nm. The measured longitudinal relaxation time of the hyperpolarized $^{129}Xe$ was 72.3 minutes.

• Journal of Magnetics
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• v.3 no.4
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• pp.105-111
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• 1998

The low energy excitations of spin waves (SWR) in thin films can be used for determination of the surface anisotropy constant and the nonhomogeneities of magnetization in the close-to-surface layer. The dispersion relation in SWR is sensitive on the geometry of experiment. We report on temperature dependence of surface magnetic anisotropy energy constant in magnetic semiconductor thin films of$ CdCr_{2-2x}In_{2x}Se_4$ at spin glass state. Samples were deposited by rf sputtering technique on Corning glass substrate in controlled temperature conditions. Coexistence of the infinite ferromagnetic network (IFN) and finite spin slusters (FSC) in spin glass state (SG) is know phenomena. Some behavior typical for long range magnetic ordering is expected in samples at SG state. The spin wave resonance experiment (microwave spectrometer at X-band) with excited surface modes was applied to describe the energy state of surface spins. We determined the surface magnetic anisotropy energy constant versus temperature using the surface inhomogeneities model of magnetic thin films. It was found that two components contribute to the surface magnetic anisotropy energy. One originates from the exchange interaction term due to the lack of translation symmetry for surface spin as well as from the originates from the exchange interaction term due to the lack of translation symmetry for surface spin as well as from the stray field of the surface roughness. The second one comes from the demagnetizing field of close-to surface layer with grad M. Both term linearly decrease when temperature is increased from 5 to 123 K, but dominant contribution is from the first component.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.157.1-157.1
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• 2007

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.570-574
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• 1995

Magnetoresistance of NiFeCo/Cu/NiFeCo/FeMn uncoupled exchange biased sandwiches has been studied. The magnetoresistance change ratio, ${\Delta}R/R_{s}$ showed 4.1 % at a saturation field as low as 11 Oe in $Si/Ti(50\;{\AA})/NiFeCo(70\;{\AA})/Cu(23\;{\AA})/NiFeCo(70\;{\AA})/FeMn(150\;{\AA})/Cu(50\;{\AA})$ spin valve structure. In this system, the magnetoresistance was affected by interlayer material and thickness. When Ti and Cu were used as the interlayer material in this structure, maximum magnetoresistance change ratio were 0.32 % and 4.1 %, respectively. 6.1 % MR ratio was obtained in $Si/Ti(50\;{\AA})/NiFeCo(70\;{\AA})/Cu(15\;{\AA})/NiFeCo(70\;{\AA})/FeMn(150\;{\AA})/Cu(50\;{\AA})$ spin valve structure. The magnetoresistance change ratio decreased monotonically as the interlayer thickness increased. It was found that the exchange bias field exerted by FeMn layer to the adjacent NiFeCo layer was ~25 Oe, far smaller than that reported in NiFe/Cu/NiFe/FeMn spin valve structure(Dieny et. al., ~400 Oe). The relationship between the film texture and exchange anisotropy ha been examined for spin valve structures with Ti, Cu, or non-buffer layer.

• Journal of Magnetics
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• v.16 no.4
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• pp.328-331
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• 2011

Here, we describe a dual spin valve structure with distinct switching fields for two pinned layers. A device with this structure has a staircase of three distinct magnetoresistive states. The multiple resistance states are achieved by controlling the exchange coupling between two ferromagnetic pinned layers and two adjacent anti-ferromagnetic pinning layers. The maximum magnetoresistance ratio is 7.9% for the current-perpendicular-to-plane and 7.2% for the current-in-plane geometries, with intermediate magnetoresistance ratios of 3.9% and 3.3%, respectively. The requirements for using this exchange-biased stack as a three-state memory device are also discussed.