• Journal of the Korean Vacuum Society
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• v.18 no.6
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• pp.447-452
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• 2009

Enhance signal-to-noise ratio, Coincidence Doppler Broadening positron method has been applied to study of characteristics of BaSrFBr:Eu film sample. In this investigation the numerical analysis of the Doppler spectra was employed to the determination of the shape parameter, S, defined as the ratio between the amount of counts in a central portion of the spectrum and the total counts of whole spectrum. The films were exposed by 0, 3, 5, and 7.5 MeV proton beams ranging from 0 to $10^{13}$ ptls. The S-parameter values were increased as increasing the exposed time and the energies, that indicated the defects generate more.

• The Transactions of the Korean Institute of Power Electronics
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• v.8 no.2
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• pp.151-164
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• 2003

In this paper, induction motor drives with low switching acoustic noise based on the 2 phase modulated RLL(Random Lead-Lag) PWM is proposed and implemented. The proposed switching method is much bettor than 3 phase modulated RLL-PWM from the standpoint of the broadening effect of the acoustic noise spectrum. Along with the randomization of PWM Pulses, SVM(Space Vector Modulation) is executed in the TMS320C31 DSP(Digital Signal Processor). To verify the validity of the proposed RPWM(Random PWM), the experimental study was tried. The experimental results show that the performance of the proposed method and the 3 phase center-aligned SVM / conventional RLL-PWM are nearly the same from the viewpoint of the constant v/f centrel. But, in case of the proposed 2 phase modulated RLL-PWM, the spectrum characteristics of the voltage and the switching acoustic noise are shown to have better broadening effect than 3 phase modulated one.

• Journal of the Korean Vacuum Society
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• v.21 no.5
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• pp.225-232
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• 2012

It is described that the proton beam induceds micro-size defects and electronic deep levels in n or p type single crystal silicon. Positron lifetime and Coincidence Doppler Broadening Positron Annihilation Spectroscopy were applied to study of characteristics of p type and n type silicon samples. In this investigation the numerical analysis of the Doppler spectra was employed to the determination of the shape parameter, S, defined as the ratio between the amount of counts in a central portion of the spectrum and the total counts of whole spectrum. The samples were exposed by 3.98 MeV proton beams ranging between 0 to ${\sim}10^{14}$ particles. The S-parameter values strongly depend on the irradiated proton beam, that indicated the defects generate more. Positron lifetime shows that positrons trapped in vacancies and lifetime ${\tau}_2$ increased according to proton irradiation.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.227.1-227.1
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• 2016

플라즈마 방출광 진단법은 플라즈마에 특별한 영향을 주지 않으면서도 진단 정보를 안정적으로, 지속적으로 취득할 수 있는 우수한 진단 방법이다. 이러한 분광 진단의 신뢰성을 확보하기 위해서는 방출광의 정확한 측정과 해석이 중요하다. 방출광의 측정에 이용되는 분광 장비는 모노크로메터(monochromator)와 소형 스펙트로메터(spectrometer)가 주로 사용된다. 스펙트로메터의 경우 모노크로메터보다 분광 성능은 다소 부족하지만 가볍고 작은 크기로 인해 장비의 설치가 용이하고 가격이 저렴하다는 장점이 있다. 또한 모노크로메터에 비해 분광 성능이 낮은 대신 넓은 범위의 파장을 동시에 측정할 수 있는 장점이 있다. 따라서 스펙트로메터는 플라즈마의 모니터링에 주로 사용된다. 그런데 스펙트로메터의 기기적 선폭 증대(instrumental broadening)보다 조밀하게 위치한 스펙트럼들은 서로 중첩이 일어나 진단이 어려워진다. 특히 분자 띠 스펙트럼(molecular band spectrum)과 같은 경우 선 스펙트럼들이 매우 밀집된 형태를 이루고 있어 범용적인 스펙트로메터로 진단하기가 어렵다. 이러한 문제점을 해결하기 위하여 합성 스펙트럼 해석법(synthetic spectrum method)을 이용할 수 있다. 본 연구에서는 수소 플라즈마의 Fulcher-${\alpha}$ 띠 스펙트럼 해석에 합성 스펙트럼법을 적용하여 분자의 회전 온도가 측정 가능한지 확인하고, 고성능의 모노크로메터를 이용한 온도 측정 결과와 서로 비교하였다. 그리고 분자의 진동 상태(vibrational state)가 분자 회전 온도 측정에 미치는 영향과 이에 따른 측정의 한계 등을 제시하였다.

• Bulletin of the Korean Chemical Society
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• v.34 no.2
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• pp.470-474
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• 2013

Surfaced-enhanced Raman scattering (SERS) of 4,4'-biphenyldithiol (BPDT) has been investigated at a silver island film. Ordinary Raman (OR) spectra of neat sample in solid state and in basic solution have also been taken for comparison. The spectral feature in the SERS spectrum was similar to that for the OR spectrum in basic solution, except for the broadening of ring stretching bands indicative of the presence of surface-phenyl ring $\pi$ interaction. In contrast, only absence of the C-H stretching band with very small Raman scattering cross-section seemed not pertinent in judging the definitive orientation of molecule. The observed vibrational bands in the SERS spectrum have been assigned by referring to the normal modes and wavenumbers from density functional theory (DFT) calculations of the simple model as 4,4'-biphenyldithiolates bound to two Ag atoms at the both ends. Excellent agreement between the experimental and the calculated results was achieved, which is remarkable considering the level of theory applied.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.173-173
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• 2010

Recently, a patterned sapphire substrate (PSS) has been intensively used as one of the effective ways to reduce the dislocation density for the III-nitride epitaxial layers aiming for the application of high-performance, especially high-brightness, light-emitting diodes (LEDs). In this paper, we analyze the growth kinetics of the atoms and crystalline quality for the undopped-GaN depending on the facets of the pattern fabricated on a sapphire substrate. The effects of the PSS on the device characteristics of InGaN/GaN LEDs were also investigated. Several GaN samples were grown on the PSS under the different growth conditions. And the undoped-GaN layer was grown on a planar sapphire substrate as a reference. For the (002) plane of the undoped-GaN layer, as an example, the line-width broadening of the x-ray diffraction (XRD) spectrum on a planar sapphire substrate is 216.0 arcsec which is significantly narrower than that of 277.2 arcsec for the PSS. However, the line-width broadening for the (102) plane on the planar sapphire substrate (363.6 arcsec) is larger than that for the PSS (309.6 arcsec). Even though the growth parameters such as growth temperature, growth time, and pressure were systematically changed, this kind of trend in the line-width broadening of XRD spectrum was similar. The emission wavelength of the undoped-GaN layer on the PSS was red-shifted by 5.7 nm from that of the conventional LEDs (364.1 nm) under the same growth conditions. In addition, the intensity for the GaN layer on the PSS was three times larger than that of the planar case. The spatial variation in the emission wavelength of the undoped-GaN layer on the PSS was statistically ${\pm}0.5\;nm$ obtained from the photoluminescence mapping results throughout the whole wafer. These results will be discussed in terms of the mixed dislocation depending on the facets and the period of the patterns.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.400-405
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• 2000

We investigated the effect of TMIn (trimethly-indium) source depletion on InGaAs, InGaAsP and 1.55 $\mu\textrm{m}$ InGaAs/InGaAsP SMQW by using EPISON ultrasonic monitor for measuring the concentration of metalorganic/carrier gas mixtures. And the problems for the growth reproducibility in MOCVD was solved by using an EPISON ultrasonic monitor with closed-loop mode under the condition of TMIn source depletion. The saturation pressure of TMIn was dramatically decreased over consumption of 80%. In the case of bulk epilayer, Up-shifting of 300 arcsec to Ga-rich direction and FWHM broadening by a factor of two in DCXRD spectrum were observed due to the TMIn source depletion. In the case of SMQW, Up-shifting of 300 arcsec to Ga-rich direction in DCXRD spectrum and blue-shift of 40 nm in PL spectrum were observed due to the TMIn source depletion. However, good reproducibility ($\Delta\theta$<$\pm$100 arcsec) was achieved even the condition of 95% of TMIn consumption, when we used the EPISON with closed-loop mode.

• Korean Journal of Optics and Photonics
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• v.14 no.3
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• pp.266-271
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• 2003

The reflectance spectrum of optical films thicker than a few microns shows an intensity oscillation due to interference. Since the spectral period of the oscillation is inversely related to film thickness, the thickness of an optical film can be determined from the spectral frequency of the oscillation. For rapid data processing, the spectral frequency is obtained by use of a Fast Fourier Transformation technique. The conventional method of applying a Fast Fourier Transformation to the reflectance spectrum versus photon energy is modified so as to clear the ambiguity in choosing the proper effective refractive index value and to prevent the broadening of the Fourier transformed peak due to the refractive index dispersion. This technique of modified Fast Fourier Transformation is suggested by the authors for the first time to their knowledge. From the analysis of the calculated reflectance spectrum of a 30-${\mu}{\textrm}{m}$-thick dielectric film. it is shown to improve the accuracy in determining film thickness by a great amount. The improved accuracy of the modified Fast Fourier Transformation is also confirmed from the analysis of the reflectance spectra of a sample with 80-${\mu}{\textrm}{m}$-thick cover layer and 13-${\mu}{\textrm}{m}$-thick spacer layer on a PC substrate.

• YAKHAK HOEJI
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• v.40 no.2
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• pp.193-201
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• 1996

In order to study the role of C-terminal aromatic region of T4 endonuclease V in the interaction with substrate DNA, NMR and Fluorescence spectrum were recorded. Analysis of flu orescence emission spectra showed that C-terminal region of T4 endonuclease V is in or very near the binding site. In the HSQC spectrum of $^{15}N$-Tyr-labeled T4 endonuclease V*DNA complex, the broadening of a peak was observed. It is presumed that this peak corresponds to one among three tyrosine residues which belong to the WYKYY segment of C-terminal region of T4 endonuclease V. Interactions of peptide fragments consisting of C-terminal residues of T4 endonuclease V with DNAs(TT-, T^T-DNA) were investigated by NMR and Fluorescence experiment. The results suggest that two peptide fragments themselves bind to DNAs and their binding pattern is not an intercalation mode.

• Nuclear Engineering and Technology
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• v.50 no.3
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• pp.340-355
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• 2018

The methods and performance of a fast reactor multigroup cross section (XS) generation code EXUS-F are described that is capable of directly processing Evaluated Nuclear Data File format nuclear data files. RECONR of NJOY is used to generate pointwise XS data, and Doppler broadening is incorporated by the Gauss-Hermite quadrature method. The self-shielding effect is incorporated in the ultrafine group XSs in the resolved and unresolved resonance ranges. Functions to generate scattering transfer matrices and fission spectrum matrices are realized. The extended transport approximation is used in zero-dimensional calculations, whereas the collision probability method and the method of characteristics are used for one-dimensional cylindrical geometry and two-dimensional hexagonal geometry problems, respectively. Verification calculations are performed first for various homogeneous mixtures and cylindrical problems. It is confirmed that the spectrum calculations and the corresponding multigroup XS generations are performed adequately in that the reactivity errors are less than 50 pcm with the McCARD Monte Carlo solutions. The nTRACER core calculations are performed with the EXUS-F-generated 47 group XSs for the two-dimensional Advanced Burner Reactor 1000 benchmark problem. The reactivity error of 160 pcm and the root mean square error of the pin powers of 0.7% indicate that EXUF-F generates properly the broad-group XSs.