• Geophysics and Geophysical Exploration
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• v.12 no.1
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• pp.56-68
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• 2009

Ongoing and extensive urbanisation, which is frequently accompanied with careless construction works, may threaten important archaeological structures that are still buried in the urban areas. Ground Penetrating Radar (GPR) and Electrical Resistivity Tomography (ERT) methods are most promising alternatives for resolving buried archaeological structures in urban territories. In this work, three case studies are presented, each of which involves an integrated geophysical survey employing the surface three-dimensional (3D) ERT and GPR techniques, in order to archaeologically characterise the investigated areas. The test field sites are located at the historical centres of two of the most populated cities of the island of Crete, in Greece. The ERT and GPR data were collected along a dense network of parallel profiles. The subsurface resistivity structure was reconstructed by processing the apparent resistivity data with a 3D inversion algorithm. The GPR sections were processed with a systematic way, applying specific filters to the data in order to enhance their information content. Finally, horizontal depth slices representing the 3D variation of the physical properties were created. The GPR and ERT images significantly contributed in reconstructing the complex subsurface properties in these urban areas. Strong GPR reflections and highresistivity anomalies were correlated with possible archaeological structures. Subsequent excavations in specific places at both sites verified the geophysical results. The specific case studies demonstrated the applicability of ERT and GPR techniques during the design and construction stages of urban infrastructure works, indicating areas of archaeological significance and guiding archaeological excavations before construction work.

• Macromolecular Research
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• v.17 no.10
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• pp.746-749
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• 2009

Poly(ethylene terephthalate) (PET) fabric/poly(3,4-ethylenedioxythiophene) (PEDOT) composite with stable and high electrochemical activity was fabricated by chemical and electrochemical polymerization of 3,4-ethylenedioxythiophene (EDOT) on a PET fabric in sequence. Effects of polymerization conditions on the following characteristics of the composite were studied: electrical conductivity and surface morphology. The electrochemical properties were also investigated by cyclic voltammetry and cyclic charge/discharge experiments. The specific volume resistivity, electrical conductivity and specific discharge capacitance of the composite were 0.034 $\Omega-cm$ and 25 S/cm, and 54.5 F/g, respectively.

• The Korean Journal of Ceramics
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• v.3 no.4
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• pp.249-252
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• 1997

Highly oriented ZnO thin films were fabricated by dip-coating technique using zinc acetate 2-methoxyethanol 2-aminoethanol solution as starting materials, and effects of substrates on the film's orientation were investigated. Product films were obtained by prefiring at 300, 400, 500 and 550℃ for 10 min, followed by final heat-treatment at the same temperatures as prefiring for 1h. c-axis oriented films on glass substrates were prepared by heat treatment of prefiring films at 300-550℃, while films on alumina showed polycrystalline structure. Films with c-axis orientation exhibited lower specific resistivities than those of polycrystalline films with partial crack and pore.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.67-68
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• 2006

We prepared the AZO thin film with different $O_2$ gas flow rate. the AZO thin films were deposited on glass substrate at room temperature, working gas pressure of 1mTorr. the electrical, structural and optical properties of AZO thin films were investigated by using Hall Effect measurement system, X-ray Diffractometer (XRD) and UV-VIS spectrometer. From the results, we could obtain that AZO thin film with low resistivity of $8.5{\times}10^{-4}{\Omega}cm$ was exhibited in specific $O_2$ gas flow rate. Also, the transmittance of over 80% in visible range was observed in specific $O_2$ gas flow rate. In all of the AZO thin film with the transmittance of over 80%, diffraction peak of (002) direction was observed, while amorphous peak was observed in the AZO thin film with the low transmittance.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.684-685
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• 2006

In the present study, the powder metallurgical fabrication of $Bi_{0.4}Te_3Sb_{1.6}$ thermoelectric materials has been studied with specific interest to control the microstructure by the mechanical grinding process. The $Bi_{0.4}Te_3Sb_{1.6}$ thermoelectric powders with a various particle size distribution were prepared by the combination of the mechanical milling and blending processes. The specific electric resistivity of the $Bi_{0.4}Te_3Sb_{1.6}$ sintered bodies mainly depended on the orientation of the crystal structure rather than the particle size of the raw powders.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2001.11b
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• pp.1347-1352
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• 2001

In this study, the acoustic properties of polyester sound absorbing materials with three different bulk densities were investigated by calculating and measuring the acoustic parameters in terms of characteristic impedance, propagation constant, and absorption coefficient. For the calculations, Delany and Bazley's empirical equation was used together with the experimentally obtained specific flow resistivities under steady flow conditions. For the experimental measurements, the well-known two-thickness method was accessed. The experimentally measured values of characteristic impedance and propagation constant were generally agreed well with the corresponding calculated values. Based on the comparisons between the calculations and measurements, it was found that the magnitude of the absorption coefficient was closely related to the characteristic impedance and the real part of the propagation constant. Especially, the maximum magnitude of the absorption coefficient was depended upon the imaginary part of the propagation constant indicating the phase change of the propagation constant.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.112-114
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• 2001

In this letter, we report on the investigation of Si/Ti, Pt/Si/Ti, Co/Si/Ti Ohmic contacts to p-type 4H-SiC. The contacts were formed by a 2-step vacuum annealing at $550^{\circ}C$ for 5 min, $850^{\circ}C$ for 2 min respectively. The contact resistances were measured using the transmission line model method, which resulted in specific $10^{-4}{\Omega}cm^2$, and the physical properties of the contactcontact resistivities in the $9.2{\times}10^{-4}$, $7.1{\times}10^{-4}$ and $4.5{\times}s$ were examined using microscopy, AES(auger electron spectroscopy). AES analysis has shown that, at this anneal temperature, there was a intermixing of the Ti and Si, migration of into SiC. Overlayer of Pt, Co had the effect of decreasing the specific contact resistivity and improving the surface morphology of the annealed contact.

• Journal of the Korean Vacuum Society
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• v.10 no.3
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• pp.368-373
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• 2001

Pd/Si/Ti/Pt ohmic contact to n-type InGaAs was investigated. As-deposited contact showed non-ohmic behavior, and high specific contact resistivity of $5\times10^{-3}\Omega\textrm{cm}^2$ was achieved by rapid thermal annealing at $375^{\circ}C$ for 10 seconds. However, the specific contact resistivity decreased remarkably to $1.7\times10^{-6}\Omega\textrm{cm}^2$ and $2\times10^{-6}\Omega\textrm{cm}^2$ at $375^{\circ}C$/60sec and $425^{\circ}C$/10sec, respectively. Superior ohmic contact and non-spiking planar interface between ohmic materials and InGaAs were maintained even at $450^{\circ}C$, therefore, this thermally stable ohmic contact system is a promising candidate for compound semiconductor devices.

• Korean Journal of Materials Research
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• v.13 no.7
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• pp.465-472
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• 2003

Pd/Ge/Ti/Pt and Pd/Ge/Pd/Ti/Au ohmic contacts to n-type InGaAs were investigated for applications to AlGaAs/GaAs HBT emitter ohmic contacts. In the Pd/Ge/Ti/Pt ohmic contact minimum specific contact resistivity of $3.7${\times}$10^{-6}$ $\Omega$$\textrm{cm}^2$ was achieved by rapid thermal annealing at $^400{\circ}C$/10 sec. In the Pd/Ge/Ti/Au ohmic contact, minimum specific contact resistivity of $1.1${\times}$10^{-6}$ $\Omega$$\textrm{cm}^2$ was achieved by annealing at 40$0^{\circ}C$/10 sec but the ohmic performance was degraded with increasing annealing temperature due to the reaction between the ohmic contact materials and the InGaAs substrate. However, non-spiking planar interface and relatively good ohmic contact (high-$10^{-6}$ /$\Omega$$\textrm{cm}^2$) were maintained after annealing at $450^{\circ}C$/10 sec. Therefore, these thermally stable ohmic contact systems are promising candidates for compound semiconductor devices. RF performance of the AlGaAs/GaAs HBT was also examined by employing the Pd/Ge/Ti/Pt and Pd/Ge/Pd/Ti/Au systems as emitter ohmic contacts. Cutoff frequencies were 63.5 ㎓ and 65.0 ㎓, respectively, and maximum oscillation frequencies were 50.5 ㎓ and 51.3 ㎓, respectively, indicating very successful high frequency operations.

• Journal of the Korean Vacuum Society
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• v.11 no.4
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• pp.201-206
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• 2002

Pd/Si/Pd/Ti/Au ohmic contact to n-type InGaAs was investigated with rapid thermal annealing conditions. Minimum specific contact resistivity of $3.9\times10^{-7}\Omega\textrm{cm}^2$ was achieved at $400^{\circ}C$/20sec. This was related to the formation of Pd-Si compounds by rapid thermal annealing and the in-diffusion of Si atoms to InGaAs surface. However, the specific contact resistivity increased slightly to low-$10^{-6}\Omega \textrm{cm}^2$ at $400^{\circ}C$ for longer than 30 seconds, and to high-$10^{-7}$ at 425~$450^{\circ}C$ for 10 seconds. This resulted from the formation of Pd-Ga compounds. Superior ohmic contact and non-spiking planar interface between ohmic materials and InGaAs were maintained after annealing at high temperature. Therefore, this thermally stable ohmic contact system is a promising candidate for compound semiconductor devices.