• 한국분말재료학회지
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• 제15권5호
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• pp.352-358
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• 2008

The present study focused on the synthesis of a bismuth-antimony-tellurium-based thermoelectric nanopowders using plasma arc discharge process. The chemical composition, phase structure, particle size of the synthesized powders under various synthesis conditions were analyzed using XRF, XRD and SEM. The powders as synthesized were sintered by the plasma activated sintering. The thermoelectric properties of sintered body were analyzed by measuring Seebeck coefficient, specific electric resistivity and thermal conductivity. The chemical composition of the synthesized Bi-Sb-Te-based powders approached that of the raw material with an increasing DC current of the are plasma. The synthesized Bi-Sb-Te-based powder consist of a mixed phase structure of the $Bi_{0.5}Sb_{1.5}Te_{3}$, $Bi_{2}Te_{3}$ and $Sb_{2}Te_{3}$ phases. This powder has homogeneous mixing state of two different particles in an average particle size; about 100nm and about 500nm. The figure of merit of the sintered body of the synthesized 18.75 wt.%Bi-24.68 wt.%Sb-56.57 wt.%Te nanopowder showed higher value than one of the sintered body of the mechanically milled 12.64 wt.%Bi-29.47 wt.%Sb-57.89 wt.%Te powder.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권2호
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• pp.283-287
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• 2017

Recently, Ni-InGaAs has been required for high-performance III-V MOSFETs as a promising self-aligned material for doped source/drain region. As downscaling of device proceeds, reduction of contact resistance ($R_c$) between Ni-InGaAs and n-InGaAs has become a challenge for higher performance of MOSFETs. In this paper, we compared three types of sample, vacuum, 2% $H_2$ and 4% $H_2$ annealing condition in rapid thermal annealing (RTA) step, to verify the reduction of $R_c$ at Ni-InGaAs/n-InGaAs interface. Current-voltage (I-V) characteristic of metal-semiconductor contact indicated the lowest $R_c$ in 4% $H_2$ sample, that is, higher current for 4% $H_2$ sample than other samples. The result of this work could be useful for performance improvement of InGaAs n-MOSFETs.

• 한국분말재료학회지
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• 제13권5호
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• pp.313-320
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• 2006

The present study is to analyze the thermoelectric properties of $Bi_{0.4}Sb_{1.6}Te_3$ thermoelectric materials fabricated by the mechanical grinding process. The $Bi_{0.4}Sb_{1.6}Te_3$ powders were prepared by the combination of mechanical milling and reduction treating methods using simply crushed pre-alloyed $Bi_{0.4}Sb_{1.6}Te_3$ powder. The mechanical milling was carried out using the tumbler-ball mill and planetary ball mill. The tumbler-ball milling had an effect on the carrier mobility rather than the carrier concentration, whereas, the latter on the carrier concentration. The specific electric resistivity and Seebeck coefficient decreased with increasing the reduction-heat-treatment time. The thermal conductivity continuously increased with increasing the reduction-heat-treatment time. The figure of merit of the $Bi_{0.4}Sb_{1.6}Te_3$ sintered body prepared by the mechanical grinding process showed higher value than one of the sintered body of the simply crushed powder.

• Journal of Electrochemical Science and Technology
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• 제6권4호
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• pp.139-145
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• 2015

Capacitive deionization (CDI) process is a novel approach for desalination of an aqueous salt solution. In the present study, an activated carbon cloth (ACC) is proposed as effective electrode material. Initially the carbon cloth was activated in 1 M and 8 M HNO₃ for 9 hours at room temperature. The untreated and chemically activated carbon cloth (ACC) electrode materials were subjected to BET surface area measurements in order to get information about their specific surface area, average pore size, total pore volume and micropore area. The above materials were characterized by X-ray diffraction (XRD) and scanning electron microscope (SEM) also. The electrochemical studies for the electrodes were done using cyclic voltammetry (CV) in 0.1 M Na₂SO₄ medium. From the studies, it was found that resistivity of the activated carbon cloth electrodes (treated in 1 M and 8 M HNO₃) was decreased significantly by the chemical oxidation in nitric acid at room temperature and its capacitance was found to be 90 F/g (1 M HNO₃) and 154 F/g (8 M HNO₃) respectively in 0.1 M Na₂SO₄ solution. The capacitive deionization behavior of a single cell CDI with activated carbon cloth electrodes was also studied and reported in this work.

• 한국세라믹학회지
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• 제47권1호
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• pp.54-60
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• 2010

This paper shortly reviews our recent work on filled skutterudites, which are considered to be one of the most promising thermoelectric (TE) materials due to their excellent power factors and relatively low thermal conductivities. The filled skutterudite system also provides a platform for studying void filling physics/chemistry in compounds with intrinsic lattice voids. By using ab initio calculations and thermodynamic analysis, our group has made progresses in understanding the filling fraction limit (FFL) for single fillers in $CoSb_3$, and ultra-high FFLs in a few alkali-metal-filled $CoSb_3$ have been predicted and then been confirmed experimentally. FFLs in multiple-element-filled $CoSb_3$ are also investigated and anonymous filling behavior is found in a few specific systems. The calculated and measured FFLs, in both single and multiple-filled $CoSb_3$ systems, show good accordance so far. The thermal transport properties can be understood qualitatively by a phonon resonance scattering model, and it seems that a scaling rule may exist between the lattice thermal resistivity and the resonance frequency of filler atoms in filled system. Even though a few things become clear now, there are still many unsolved issues that call for further work.

• 전기화학회지
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• 제4권1호
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• pp.10-13
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• 2001

광전기화학적 양극 산화법으로 다공질 실리콘 (porous silicon, PS)을 제조할 때 전해질에 음이온성 계면활성제의 한 종류인 Pentadecafluorooctanoic acid (PDFO)를 첨가하여 제조한 PS의 광발광(photoluminescence, PL)의 변화를 조사하였다. 사용한 웨이퍼는 비저항이 $0.4\~0.8{\Omega}{\cdot}cm$인 n-형 단결정 실리콘 (100)이었으며, 일정전위 4V를 600초 동안 걸어주어 다공성 실리콘을 제조하였다. 이 때 나타난 PL의 변화는 첨가한 계면활성제의 농도가 1mM에서 50mM로 증가함에 따라서 PL의 중심파장이 600nm에서 550nm로 단파장 이동함을 보여주었으며, PL의 세기는 감소함을 보여주었다. FT-IR을 사용하여 에칭된 다공성 실리콘 위에 PDFO가 존재함을 알 수 있었고 Goniometer를 사용한 물방울 각도 측정을 통해서 생성된 표면이 소수성임을 알 수 있었다. 이로부터 계면활성제의 소수성 부분인 포화탄화불소 사슬 부분이 표면에 전체적으로 누워있다고 유추하였다.

• 비파괴검사학회지
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• 제28권2호
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• pp.177-183
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• 2008

고온-고압의 장시간 사용으로 나타나게 되는 재료열화현상을 이해하고 구조건전성 모니터링을 위한 기초연구로 사용하고자 대표적인 로터용 내열강인 2.25CrMo 강과 9CrMo 강 그리고 12CrW 강을 연구하였다. 재료열화를 모니터링하기 위해 2.25CrMo 강은 등온열화 시험을 9CrMo 강은 크리프-피로 시험을 그리고 12CrW 강은 크리프 시험을 각 단계별로 수행하였다. 이들 각 손상재에 대한 초음파전파특성, 비저항측정 그리고 보자력측정을 통하여 미세조직 의존성을 고찰하였고 이들 파라미터는 특정 미세조직의 변화에 상당히 민감하게 작용하였다.

• 한국재료학회지
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• 제9권5호
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• pp.496-502
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• 1999

In this study, n-GaN samples were etched using planar inductively coupled $Cl_2$/$H_2$plasmas and the effects of plasma conditions on the etch properties, surface composition, and ohmic contact formation were investigated as a function of gas combination. As the addition of hydrogen to the $Cl_2$plasma increased to 100%, GaN etch rates decreased due to the reduction of chlorine radical density. Even though the variation of the surface composition is limited under $50\AA$, the surface composition was also changed from Ga-rich to N-rich with the increased addition of hydrogen to $Cl_2$. Etch products by the reaction between Ga in GaN and Cl in $Cl_2$ plasma were investigated using OES analysis during the GaN etching. The value of specific resistivity of the contact formed on the n-GaN etched using 100% $Cl_2$plasma was 3.1$\times$10\ulcorner$\Omega$$\textrm{cm}^2$, and which was lower than that formed on the non-etched n-GaN. However, the resistively was increased with the increased hydrogen percent in $Cl_2$/$H_2$.

• 한국표면공학회지
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• 제47권3호
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• pp.109-115
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• 2014

High power impulse magnetron sputtering (HIPIMS), also known as the technology is called peak power density in a short period, you can get high, so high ionization sputtering rate can make. Higher ionization of sputtered species to a variety of coating materials conventional in the field of improving the characteristics and self-assisted ion thin film deposition process, which contributes to a superior being. HIPIMS at the same power, but the deposition speed is slow in comparison with DC disadvantages. Since recently as a replacement for HIPIMS modulated pulse power (MPP) has been developed. This ionization rate of the sputtered species can increase the deposition rate is lowered and at the same time to overcome the problems to be reported. The differences between the MPP and the HIPIMS is a simple single pulse with a HIPIMS whereas, MPP is 3 ms in pulse length is adjustable, with the full set of multi-pulses within the pulse period and the pulse is applied can be micro advantages. In this experiment, $In_2O_3$ : $SnO_2$ composition ratio of 9 : 1 wt% target was used, Ar : $O_2$ flow rate ratio is 4.8 to 13.0% of the rate of deposition was carried out at room temperature. Ar 40 sccm and the flow rate of $O_2$ and then fixed 2 ~ 6 sccm was compared against that. The thickness of the thin film deposition is fixed at 60 nm, when the partial pressure of oxygen at 9.1%, the specific resistance value of $4.565{\times}10^{-4}{\Omega}cm$, transmittance 86.6%, mobility $32.29cm^2/Vs$ to obtain the value.

• 문화기술의 융합
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• 제6권2호
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• pp.467-472
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• 2020

일반적인 보통 등급의 지반(ground) 상 구조물의 안정성 확보를 위한 설계입력정수(input-parameters) 도출방법들은 보편적으로 잘 알려져 있다. 연구지역과 같은 습곡된(folded) 변성암(metamorphic rocks) 지반은 엽리가(foliation) 촘촘히 발달해 있고, 엽리에 평행한 소규모 단층들(faults)이 분포하고 있어 설계입력정수 도출을 위한 특별한 조사방법 및 시험, 등이 요구된다. 수 mm 간격의 엽리가 발달한 변성암 지반은 엽리면 직접전단강도시험(direct shear test), 엽리의 배향(strike/dip)과 맵핑(mapping), 엽리의 지하 연속성 파악을 위한 시추조사, 변성암반의 암반분류(rock mass rating), 등이 필요하다. 특정 엽리면을 따라 발달한 소규모의 엽리평행단층(foliation-parallel faults)이 다수 발달한 지반은 선구조선 분석, 단층 추적을 위한 지표지질맵핑, 단층면 직접전단강도시험, 등이 필수적이다. 습곡지반은 지질구조구(structural domain) 분석, 불연속면의 평사투영(stereonet)해석, 습곡축을 따른 전기비저항탐사, 등의 추가조사로 설계입력정수 도출이 합리적이다.