• 비파괴검사학회지
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• 제33권3호
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• pp.257-263
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• 2013

Acoustic nonlinearity of surface waves is an effective method to evaluate the micro damage on the surface of materials. In this method, the $A_1$ (magnitude of the fundamental wave) and $A_2$ (magnitude of the second-order harmonic wave) are measured for evaluation of acoustic nonlinearity. However, if there is another source of second-order harmonic wave other than the material itself, the linear relationship between $A_1{^2}$ and $A_2$ will not be guaranteed. Therefore, the second-order harmonic generation by another source should be fully suppressed. In this paper, we investigated the initial second-order harmonic generation in narrowband surface waves by multi-line laser beams. The spatial profile of laser beam was considered in the cases of Gaussian and square-like. The temporal profile was assumed to be Gaussian. In case of Gaussian spatial profile, the generation of the initial second-order harmonic wave was inevitable. However, when the spatial profile was square-like, the generation of the initial second-order harmonic wave was able to be fully suppressed at specific duty ratio. These results mean that the multi-line laser beams of square-like profile with a proper duty ratio are useful to evaluate the acoustic nonlinearity of the generated surface waves.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.501-501
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• 2012

A 2.45 GHz electron cyclotron resonance (ECR) plasma source with a belt magnet assembly configuration (BMC) was developed for hyperthermal neutral beam (HNB) generation. A plasma source for high flux HNB generation should be satisfied with the requirements: low pressure operation, high density, and thin plasma. The ECR plasma source with BMC achieved high density at low operation pressure due to electron confinement enhancement caused by high mirror ratio and drifts in toroidal direction. The 2.45 GHz microwave launcher had a circularly bended WR340 waveguide with slits. The microwave E-field profile induced by the microwave launcher was studied in this paper. The E-field profile was a cups field perpendicular to B-filed at ECR zone. The optimized E-field profile and B-field were found for effective ECR heating.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권2호
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• pp.170-177
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• 2008

In the present work a methodology to minimize short channel effects (SCEs) by modulating the effective channel length is proposed to design 25 nm single and double gate-source/drain underlap MOSFETs. The analysis is based on the evaluation of the ratio of effective channel length to natural/ characteristic length. Our results show that for this ratio to be greater than 2, steeper source/drain doping gradients along with wider source/drain roll-off widths will be required for both devices. In order to enhance short channel immunity, the ratio of source/drain roll-off width to lateral straggle should be greater than 2 for a wide range of source/drain doping gradients.

• 전자공학회논문지
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• 제52권3호
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• pp.105-115
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• 2015

반도체 식각 전산모사에서는 플라즈마 입자를 생성하는 소스의 모델링이 필요하다. 본 논문에서는 플라즈마 식각 공정에서 사용하는 소스를 확률분포함수로 모델링하고, 몬테칼를로 방법을 이용하여 특정 프로프일의 플럭스를 계산하는 실험을 하였다. 소스의 모델링 파라미터로 소스와 셀 사이의 거리, 소스에서 방사하는 입자수가 있고, 플럭스 계산에 미치는 추가적인 파라미터로 프로파일 상의 셀의 수(셀의 면적)이 있다. 방사하는 입자 분포는 사용하는 소스의 물성에 따라 가우시안 분포와 코사인 분포로 모델링 할 수 있는데, 본 논문은 이들 각각에 대하여 파라미터를 바꿔가며 전산모사를 한 결과를 보인다. 오차율은 가우지안(Incident Flux)과 코사인분포(Incident Neutral Flux)에서 모두 입자 수의 증가에 따라 상당부분 감소하였으나 처리시간은 이보다 더 증가하였다. 셀수와 거리의 증가는 오차율을 약간 증가시켰고 처리시간도 증가시켰다. 본 논문의 실험 결과를 통해 처리 시간을 고려하여 적합한 플럭스의 계산을 유추할 수 있다.

• 한국결정성장학회지
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• 제16권4호
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• pp.149-156
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• 2006

For an aspect ratio (transport length-to-width) of 5, Pr = 2.89, Le = 0.018, Pe = 2.29, Cv = 1.11, $P_B$=40 Torr, solutally buoyancy-driven convection $(Gr_s=3.03{\times}10^5)$ due to the disparity in the molecular weights of the component A $(Hg_2Cl_2)$ and B (He) is stronger than thermally buoyancy-driven convection $(Cr_t=1.66{\times}10^4)$. The crystal growth rate is decreased exponentially for $2.5\;{\leq}\;Ar\;{\leq}\;5$, with (1) the linear temperature profile and a fixed temperature difference, (2) the imposed thermal profile, a fixed crystal region and varied temperature difference. This is related to the finding that the effects of side walls tend to stabilize convection in the growth reactor. But, with the imposed thermal profile, a fixed source region and varied temperature difference, the rate is increased far $2\;{\leq}\;Ar\;{\leq}\;3$, and remains nearly unchanged for $3\;{\leq}\;Ar\;{\leq}\;5$.

• 한국결정성장학회지
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• 제17권6호
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• pp.231-237
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• 2007

For an aspect ratio (transport length-to-width) of 5, Pr=3.34, Le=0.078, Pe=4.16, Cv=1.01, $P_B=50$ Torr, only thermally buoyancy-driven convection ($Gr=4.83{\times}10^5$) is considered in this study in spite of the disparity in the molecular weights of the component A ($Hg_2Cl_2$) and B which would cause thermally and/or solutally buoyancy-driven convection. The crystal growth rate and the maximum velocity vector magnitude are decreased exponentially for $3{\le}Ar{\le}5$, for (1) adiabatic walls and (2) the linear temperature profile, with a fixed source temperature. This is related to the finding that the effects of side walls tend to stabilize convection in the growth reactor. The rate for the linear temperature profiles walls is slightly greater than for the adiabatic walls far varied temperature differences and aspect ratios. With the imposed thermal profile, a fixed source region, both the rate and the maximum velocity vector magnitude increase linearly with increasing the temperature difference for $10{\le}{\Delta}T{\le}50K$.

• 한국전기전자재료학회논문지
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• 제18권5호
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• pp.389-395
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• 2005

The etching technology of the high aspect ratio contact(HARC) is necessary at the critical contact processes of semiconductor devices. Etching the $SiO_{2}$ contact hole with the sub-micron design rule in manufacturing VLSI devices, the unexpected phenomenon of 'profile tilting' or 'bottom distortion' is often observed. This makes a short circuit between neighboring contact holes, which causes to drop seriously the device yield. As the aspect ratio of contact holes increases, the high C/F ratio gases, $C_{4}F_{6}$, $C_{4}F_{8}$ and $C_{5}F_{8}$, become widely used in order to minimize the mask layer loss during the etching process. These gases provide abundant fluorocarbon polymer as well as high selectivity to the mask layer, and the polymer with high sticking yield accumulates at the top-wall of the contact hole. During the etch process, many electrons are accumulated around the asymmetric hole mouth to distort the electric field, and this distorts the ion trajectory arriving at the hole bottom. These ions with the distorted trajectory induce the deformation of the hole bottom, which is called 'profile tilting' or 'bottom distortion'. To prevent this phenomenon, three methods are suggested here. 1) Using lower C/F ratio gases, $CF_{4}$ or $C_{3}F_{8}$, the amount of the Polymer at the hole mouth is reduced to minimize the asymmetry of the hole top. 2) The number of the neighboring holes with equal distance is maximized to get the more symmetry of the oxygen distribution around the hole. 3) The dual frequency plasma source is used to release the excessive charge build-up at the hole mouth. From the suggested methods, we have obtained the nearly circular hole bottom, which Implies that the ion trajectory Incident on the hole bottom is symmetry.

• 한국분무공학회지
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• 제21권3호
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• pp.155-161
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• 2016

Injected fuel pressure waves of a common rail injector with various current profiles supplied to the injecor were measured using Bosch method. In order to drive the common rail injector, the current in the solenoid should be controlled using what is known as a peak and hold pattern, which consists of a high current level with a short time duration (peak) in the first step and a low current level with a long time duration (hold) in the subsequent step. The current profile can be shaped by swithcing an injector driving power source with the peak and hold waves. The capture, compare and PWM (CCP) pin in the microprocessor was used to generate the combined peak and hold waves. The PWM square wave generated from the CCP pin has a duty ratio of 100% for the peak current and 10% or 30% for the hold pattern. Five patterns of the current profile were generated by combining the peak and hold wave. The common rail pressure is controlled at 75, 100, and 130 MPa. As the fuel rail pressure increases, the variations of the measured fuel injection pressure wave according to the current profiles decrease.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.508-508
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• 2012

CST microwave studio is used to simulate the plasma profile of the 450mm CCP source. Standing wave effect becomes important at the high frequency as the electrode radius increases. To solve plasma non-uniformity problem, we designed multi electrode chamber to decreasing standing wave effect. Simulation showed the ratio of input power of each electrode is related with electric field strength. The multi electrode was constructed and measured by 2D probe arrays using floating harmonic method. Uniformity of 450 mm CCP was changed by the ratio of input power of each electrode. We described this dependence with circuit model.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.307-307
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• 2013

초고집적 회로에 적용되는 반도체 소자의critical dimension (CD)이 수 nano 사이즈로 줄어들고 있기 때문에, 다양한 물질의 식각을 할 때, 건식식각의 중요성이 더 강조되고 있다. 특히 $SiO_2$와 같은 유전체 물질을 식각할 때, plasma process induced damages (P2IDs)가 관찰되어 왔고, 이러한 P2IDs를 줄이기 위해, pulsed-time modulation plasma가 광범위하게 연구되어 왔다. Pulsed plasma는 정기적으로 radio frequency (RF) power on과 off를 반복하여 rf power가 off된 동안, 평균전자 온도를 낮춤으로써, 웨이퍼로 입사되는 전하 축적을 효과적으로 줄일 수 있다. 또한 fluorocarbon plasmas를 사용하여 $SiO_2$를 식각하기 위해 Dual-Frequency Capacitive coupled plasma (DF-CCP)도 널리 연구되어 왔는데, 이것은 기존의 방법과는 다르게 plasma 밀도와 ion bombardment energy를 독립적으로 조절 가능하다는 장점이 있어서 미세 패턴을 식각할 때 효과적이다. 본 연구에서는 Source power에는 60 MHz pulsed radio frequency (RF)를, bias power에는 2 MHz continuous wave (CW) rf power가 사용된 system에서 Ar/$C_4$ F8/$O_2$ 가스 조합으로, amorphous carbon layer (ACL)가 hard mask로 사용된 $SiO_2$를 식각했다. 그리고 source pulse의 duty ratio와 pulse frequency의 효과에 따른 $SiO_2$의 식각특성을 연구하였다. 그 결과, duty ratio의 감소에 따라 $SiO_2$, ACL의 etch rate이 감소했지만, $SiO_2$/ACL의 etch selectivity는 증가하였다. 반면에 pulse frequency의 변화에 따른 두 물질의 etch selectivity는 크게 변화가 없었다. 그 이유는 pulse 조건인 duty ratio의 감소가 전자 온도 및 전자 에너지를 낮춰 $C_2F8$가스의 분해를 감소시켰으며, 이로 인해 식각된 $SiO_2$의 surface와 sidewall에 fluorocarbon polymer의 형성이 증가하였기 때문이다. 또한 duty ratio의 감소에 따라 etch selectivity뿐만 아니라 etch profile까지 향상되는 것을 확인할 수 있었다.