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http://dx.doi.org/10.5573/ieie.2015.52.3.105

A Appropriate Flux Generating Conditions for Semiconductor Etching Simulation  

Jeong, Seunghan (Division of Electronics & Information Engineering, Chonbuk National University)
Gwun, Oubong (IT Convergence Research Center, Division of Computer Science & Engineering, Chonbuk National University)
Shin, Seongsik (KyoungWon Tech Co.)
Publication Information
Journal of the Institute of Electronics and Information Engineers / v.52, no.3, 2015 , pp. 105-115 More about this Journal
Abstract
In semiconductor etching simulation, The source modeling for generating plasma species is required. In this paper, we modeled the source of plasma etching process with probability distribution and the feature profile with simple geometry objects, then got the flux on the feature profile. The distance between the source and the cell on the modeling parameters of the source, there are a number of particles to be emitted from a source, there is a number (area of the cell) of the cell on the profile with additional parameters to give the calculation of flux. The flux error ratio on both gaussian(Incident Flux) and cosine probability distribution(Incident Neutral Flux) is much decreased as the number of ray is increased but the processing time is more increased than that. The increase of the number of cell and distance makes increase the flux error ratio and the processing time moderately. In view of the processing time through the experimental results in this paper, it is possible to analogize the calculation of appropriate fluxes.
Keywords
플라즈마 식각;전산모사;플럭스;소스 모델링;몬테카를로;
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