• Journal of the Korean Society for Nondestructive Testing
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• v.33 no.3
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• pp.257-263
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• 2013

Acoustic nonlinearity of surface waves is an effective method to evaluate the micro damage on the surface of materials. In this method, the $A_1$ (magnitude of the fundamental wave) and $A_2$ (magnitude of the second-order harmonic wave) are measured for evaluation of acoustic nonlinearity. However, if there is another source of second-order harmonic wave other than the material itself, the linear relationship between $A_1{^2}$ and $A_2$ will not be guaranteed. Therefore, the second-order harmonic generation by another source should be fully suppressed. In this paper, we investigated the initial second-order harmonic generation in narrowband surface waves by multi-line laser beams. The spatial profile of laser beam was considered in the cases of Gaussian and square-like. The temporal profile was assumed to be Gaussian. In case of Gaussian spatial profile, the generation of the initial second-order harmonic wave was inevitable. However, when the spatial profile was square-like, the generation of the initial second-order harmonic wave was able to be fully suppressed at specific duty ratio. These results mean that the multi-line laser beams of square-like profile with a proper duty ratio are useful to evaluate the acoustic nonlinearity of the generated surface waves.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.501-501
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• 2012

A 2.45 GHz electron cyclotron resonance (ECR) plasma source with a belt magnet assembly configuration (BMC) was developed for hyperthermal neutral beam (HNB) generation. A plasma source for high flux HNB generation should be satisfied with the requirements: low pressure operation, high density, and thin plasma. The ECR plasma source with BMC achieved high density at low operation pressure due to electron confinement enhancement caused by high mirror ratio and drifts in toroidal direction. The 2.45 GHz microwave launcher had a circularly bended WR340 waveguide with slits. The microwave E-field profile induced by the microwave launcher was studied in this paper. The E-field profile was a cups field perpendicular to B-filed at ECR zone. The optimized E-field profile and B-field were found for effective ECR heating.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.2
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• pp.170-177
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• 2008

In the present work a methodology to minimize short channel effects (SCEs) by modulating the effective channel length is proposed to design 25 nm single and double gate-source/drain underlap MOSFETs. The analysis is based on the evaluation of the ratio of effective channel length to natural/ characteristic length. Our results show that for this ratio to be greater than 2, steeper source/drain doping gradients along with wider source/drain roll-off widths will be required for both devices. In order to enhance short channel immunity, the ratio of source/drain roll-off width to lateral straggle should be greater than 2 for a wide range of source/drain doping gradients.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.3
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• pp.105-115
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• 2015

In semiconductor etching simulation, The source modeling for generating plasma species is required. In this paper, we modeled the source of plasma etching process with probability distribution and the feature profile with simple geometry objects, then got the flux on the feature profile. The distance between the source and the cell on the modeling parameters of the source, there are a number of particles to be emitted from a source, there is a number (area of the cell) of the cell on the profile with additional parameters to give the calculation of flux. The flux error ratio on both gaussian(Incident Flux) and cosine probability distribution(Incident Neutral Flux) is much decreased as the number of ray is increased but the processing time is more increased than that. The increase of the number of cell and distance makes increase the flux error ratio and the processing time moderately. In view of the processing time through the experimental results in this paper, it is possible to analogize the calculation of appropriate fluxes.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.4
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• pp.149-156
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• 2006

For an aspect ratio (transport length-to-width) of 5, Pr = 2.89, Le = 0.018, Pe = 2.29, Cv = 1.11, $P_B$=40 Torr, solutally buoyancy-driven convection $(Gr_s=3.03{\times}10^5)$ due to the disparity in the molecular weights of the component A $(Hg_2Cl_2)$ and B (He) is stronger than thermally buoyancy-driven convection $(Cr_t=1.66{\times}10^4)$. The crystal growth rate is decreased exponentially for $2.5\;{\leq}\;Ar\;{\leq}\;5$, with (1) the linear temperature profile and a fixed temperature difference, (2) the imposed thermal profile, a fixed crystal region and varied temperature difference. This is related to the finding that the effects of side walls tend to stabilize convection in the growth reactor. But, with the imposed thermal profile, a fixed source region and varied temperature difference, the rate is increased far $2\;{\leq}\;Ar\;{\leq}\;3$, and remains nearly unchanged for $3\;{\leq}\;Ar\;{\leq}\;5$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.6
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• pp.231-237
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• 2007

For an aspect ratio (transport length-to-width) of 5, Pr=3.34, Le=0.078, Pe=4.16, Cv=1.01, $P_B=50$ Torr, only thermally buoyancy-driven convection ($Gr=4.83{\times}10^5$) is considered in this study in spite of the disparity in the molecular weights of the component A ($Hg_2Cl_2$) and B which would cause thermally and/or solutally buoyancy-driven convection. The crystal growth rate and the maximum velocity vector magnitude are decreased exponentially for $3{\le}Ar{\le}5$, for (1) adiabatic walls and (2) the linear temperature profile, with a fixed source temperature. This is related to the finding that the effects of side walls tend to stabilize convection in the growth reactor. The rate for the linear temperature profiles walls is slightly greater than for the adiabatic walls far varied temperature differences and aspect ratios. With the imposed thermal profile, a fixed source region, both the rate and the maximum velocity vector magnitude increase linearly with increasing the temperature difference for $10{\le}{\Delta}T{\le}50K$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.5
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• pp.389-395
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• 2005

The etching technology of the high aspect ratio contact(HARC) is necessary at the critical contact processes of semiconductor devices. Etching the $SiO_{2}$ contact hole with the sub-micron design rule in manufacturing VLSI devices, the unexpected phenomenon of 'profile tilting' or 'bottom distortion' is often observed. This makes a short circuit between neighboring contact holes, which causes to drop seriously the device yield. As the aspect ratio of contact holes increases, the high C/F ratio gases, $C_{4}F_{6}$, $C_{4}F_{8}$ and $C_{5}F_{8}$, become widely used in order to minimize the mask layer loss during the etching process. These gases provide abundant fluorocarbon polymer as well as high selectivity to the mask layer, and the polymer with high sticking yield accumulates at the top-wall of the contact hole. During the etch process, many electrons are accumulated around the asymmetric hole mouth to distort the electric field, and this distorts the ion trajectory arriving at the hole bottom. These ions with the distorted trajectory induce the deformation of the hole bottom, which is called 'profile tilting' or 'bottom distortion'. To prevent this phenomenon, three methods are suggested here. 1) Using lower C/F ratio gases, $CF_{4}$ or $C_{3}F_{8}$, the amount of the Polymer at the hole mouth is reduced to minimize the asymmetry of the hole top. 2) The number of the neighboring holes with equal distance is maximized to get the more symmetry of the oxygen distribution around the hole. 3) The dual frequency plasma source is used to release the excessive charge build-up at the hole mouth. From the suggested methods, we have obtained the nearly circular hole bottom, which Implies that the ion trajectory Incident on the hole bottom is symmetry.

• Journal of ILASS-Korea
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• v.21 no.3
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• pp.155-161
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• 2016

Injected fuel pressure waves of a common rail injector with various current profiles supplied to the injecor were measured using Bosch method. In order to drive the common rail injector, the current in the solenoid should be controlled using what is known as a peak and hold pattern, which consists of a high current level with a short time duration (peak) in the first step and a low current level with a long time duration (hold) in the subsequent step. The current profile can be shaped by swithcing an injector driving power source with the peak and hold waves. The capture, compare and PWM (CCP) pin in the microprocessor was used to generate the combined peak and hold waves. The PWM square wave generated from the CCP pin has a duty ratio of 100% for the peak current and 10% or 30% for the hold pattern. Five patterns of the current profile were generated by combining the peak and hold wave. The common rail pressure is controlled at 75, 100, and 130 MPa. As the fuel rail pressure increases, the variations of the measured fuel injection pressure wave according to the current profiles decrease.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.508-508
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• 2012

CST microwave studio is used to simulate the plasma profile of the 450mm CCP source. Standing wave effect becomes important at the high frequency as the electrode radius increases. To solve plasma non-uniformity problem, we designed multi electrode chamber to decreasing standing wave effect. Simulation showed the ratio of input power of each electrode is related with electric field strength. The multi electrode was constructed and measured by 2D probe arrays using floating harmonic method. Uniformity of 450 mm CCP was changed by the ratio of input power of each electrode. We described this dependence with circuit model.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.307-307
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• 2013

초고집적 회로에 적용되는 반도체 소자의critical dimension (CD)이 수 nano 사이즈로 줄어들고 있기 때문에, 다양한 물질의 식각을 할 때, 건식식각의 중요성이 더 강조되고 있다. 특히 $SiO_2$와 같은 유전체 물질을 식각할 때, plasma process induced damages (P2IDs)가 관찰되어 왔고, 이러한 P2IDs를 줄이기 위해, pulsed-time modulation plasma가 광범위하게 연구되어 왔다. Pulsed plasma는 정기적으로 radio frequency (RF) power on과 off를 반복하여 rf power가 off된 동안, 평균전자 온도를 낮춤으로써, 웨이퍼로 입사되는 전하 축적을 효과적으로 줄일 수 있다. 또한 fluorocarbon plasmas를 사용하여 $SiO_2$를 식각하기 위해 Dual-Frequency Capacitive coupled plasma (DF-CCP)도 널리 연구되어 왔는데, 이것은 기존의 방법과는 다르게 plasma 밀도와 ion bombardment energy를 독립적으로 조절 가능하다는 장점이 있어서 미세 패턴을 식각할 때 효과적이다. 본 연구에서는 Source power에는 60 MHz pulsed radio frequency (RF)를, bias power에는 2 MHz continuous wave (CW) rf power가 사용된 system에서 Ar/$C_4$ F8/$O_2$ 가스 조합으로, amorphous carbon layer (ACL)가 hard mask로 사용된 $SiO_2$를 식각했다. 그리고 source pulse의 duty ratio와 pulse frequency의 효과에 따른 $SiO_2$의 식각특성을 연구하였다. 그 결과, duty ratio의 감소에 따라 $SiO_2$, ACL의 etch rate이 감소했지만, $SiO_2$/ACL의 etch selectivity는 증가하였다. 반면에 pulse frequency의 변화에 따른 두 물질의 etch selectivity는 크게 변화가 없었다. 그 이유는 pulse 조건인 duty ratio의 감소가 전자 온도 및 전자 에너지를 낮춰 $C_2F8$가스의 분해를 감소시켰으며, 이로 인해 식각된 $SiO_2$의 surface와 sidewall에 fluorocarbon polymer의 형성이 증가하였기 때문이다. 또한 duty ratio의 감소에 따라 etch selectivity뿐만 아니라 etch profile까지 향상되는 것을 확인할 수 있었다.