• The Journal of the Acoustical Society of Korea
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• v.32 no.4
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• pp.308-316
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• 2013

A set of experiments (Shallow Water 2006, SW06) was carried out in shallow water near the New Jersey shelf break in summer 2006. Significant fluctuations in direct and surface reflected arrivals were observed from the chirp data (1100~2900 Hz) measured on a vertical line array. This paper presents a geoacoustic inverssion technique for short-range acoustic data with fluctuating arrivals and inversion results of experimental data. In order to reduce effects of random sea surface on the inversion, the acoustic energy back-propagated from the array to the source through direct and bottom-reflected paths is defined as the objective function. A multi-step inversion scheme is applied to the data using VFSR (Very Fast Simulated Reannealing) optimization technique. The inversion results show a source depth oscillation period equal to the measured ocean surface wave period. The inverted bottom sound speed is 1645 m/s and is similar to that estimated by other work at the same site.

• Journal of Korea Water Resources Association
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• v.38 no.9 s.158
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• pp.727-736
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• 2005

In this study, the upwind McCormack scheme is introduced to combine the advantage of McCormack scheme, the second order accuracy and simplicity, and the advantage of the upwind scheme, to be applied to the discontinuous flows. This scheme also has another advantage of treating the source terms effectively. This model is approved through applying to the discontinuous flow case with the analytical solution, and the natural river with very strong source terms. Applications of the upwind McCormack scheme developed in this paper show good agreements with the analytical solution without numerical oscillation in existing McCormack scheme. Futhermore, applications to the natural river, the lower Han river with strong variation of bed and width, also show good results in case of both steady flow and unsteady flow. The upwind McCormack scheme in this study will be used for the analysis of flow in natural rivers effectively.

• Journal of Korea Water Resources Association
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• v.44 no.3
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• pp.249-262
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• 2011

In this study, in order to reduce the numerical oscillation due to the unbalance between source and flux terms as the HLLC scheme is applied to the flow analysis on the irregular bed topography, a unstructured finite volume model based on the well-balanced HLLC scheme and the shallow water equations is developed and applied to problems of dam-break waves. The well-balanced HLLC scheme considers directly the gradient of bed topography as the flux terms is calculated. This scheme provides the good numerical balance between the source and flux terms in the case of the application to the steady-state transcritical flow. To verify the numerical model developed in this study, it is applied to three cases of hydraulic model experiments and a field case study of Mapasset dam failure (France). As a result of the verification, the predicted numerical results agree relatively well with available laboratory and field measurements. The model provides slightly more accurate results compared with the existing models.

• ETRI Journal
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• v.34 no.6
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• pp.950-953
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• 2012

Schottky barrier single electron transistors (SB-SETs) and Schottky barrier single hole transistors (SB-SHTs) are fabricated on a 20-nm thin silicon-on-insulator substrate incorporating e-beam lithography and a conventional CMOS process technique. Erbium- and platinum-silicide are used as the source and drain material for the SB-SET and SB-SHT, respectively. The manufactured SB-SET and SB-SHT show typical transistor behavior at room temperature with a high drive current of $550{\mu}A/{\mu}m$ and $-376{\mu}A/{\mu}m$, respectively. At 7 K, these devices show SET and SHT characteristics. For the SB-SHT case, the oscillation period is 0.22 V, and the estimated quantum dot size is 16.8 nm. The transconductance is $0.05{\mu}S$ and $1.2{\mu}S$ for the SB-SET and SB-SHT, respectively. In the SB-SET and SB-SHT, a high transconductance can be easily achieved as the silicided electrode eliminates a parasitic resistance. Moreover, the SB-SET and SB-SHT can be operated as a conventional field-effect transistor (FET) and SET/SHT depending on the bias conditions, which is very promising for SET/FET hybrid applications. This work is the first report on the successful operations of SET/SHT in Schottky barrier devices.

• Journal of Electrical Engineering and Technology
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• v.11 no.6
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• pp.1763-1768
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• 2016

This paper presents the electrical characteristics of the gallium nitride (GaN) current aperture vertical electron transistor (CAVET) by using two-dimensional (2-D) technology computer-aided design (TCAD) simulations. The CAVETs are considered as the alternative device due to their high breakdown voltage and high integration density in the high-power applications. The optimized design for the CAVET focused on the electrical performances according to the different gate-source length ($L_{GS}$) and aperture length ($L_{AP}$). We analyze DC and RF parameters inducing on-state current ($I_{on}$), threshold voltage ($V_t$), breakdown voltage ($V_B$), transconductance ($g_m$), gate capacitance ($C_{gg}$), cut-off frequency ($f_T$), and maximum oscillation frequency ($f_{max}$).

• Transactions of the Korean Society of Mechanical Engineers B
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• v.28 no.8 s.227
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• pp.887-894
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• 2004

A technique of mixing enhancement by using an elliptic jet screech reflector has been examined experimentally in an underexpanded sonic round jet where jet screech tone is generated. Since jet screech is known to enhance jet spreading, a reflector was designed to focus jet screech waves near the nozzle lip at an underexpanded jet. The reflector has an elliptic cross section of which one focus is located near the nozzle lip and the other in the jet screech source region in a plane including the jet axis. In the jet with the elliptic reflector, the mass flow rate showed a significant increase in the jet entrainment when compared to that for the small disk reflector. This was attributed to the increased screech amplitude near the nozzle lip as well as the mode change of the jet. The jet mixing was also increased by the amplified jet screech at two other underexpanded jets, but the jet oscillation mode did not change.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.370-373
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• 2003

Superluminescent diodes(SLDs) are the optimum light sources for application in optical measurement systems such as fiber gyroscopes, optical time domain reflectometers, and to short and medium distance optical communication systems. The broadband characteristics of SLDs reduce Rayleigh backscattering noise, polarization noise, and the bias offset due to the nonlinear Kerr effect in fiber gyro systems. In this paper, in order to suppress lasing oscillation, we introduced a laterally tilted SCH(Separate Confinement Heterostructure)-SLD with a window region. An output power of 11mW has been achieved at 200mA injection current at 25$^{\circ}C$. At 120mA, parallel and perpendicular to the junction were 31$^{\circ}$${\times}$38$^{\circ}$.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.33B no.12
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• pp.24-30
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• 1996

In this paper, we designed a new type of high frequency on-chip voltage controlled oscillator (VCO) using GaAs MESFET, and their performances were comapred with those of the conventional VCO. Each VCO was designed with three-to-five ring oscillator and inverter, buffer and NOR gate were implemented by GaAs source coupled FET logic, which has better speed and noise performance compared to other GaAs MESFET logic. SPICE simulation showed that the gain of conventional and our new VCO was 1.24[GHz/V], 0.54[GHz/V], respectively. The frquency tuning range were 2.31 to 3.55 [GHz] for conventional VCO and 2.47 to 3.01[GHz] for our new design. This shows that the factor of two gain reductin was achieved without too much sacrifice in the oscillation frequency. For our new VCO, the average temperature index was -2[MHz/.deg. C] in the range of -20~85[.deg. C] the power supply noise index was 5[MHz/%] for 5.3[V].+-.10[%] and total power consumption was 60.58[mW].

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.10
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• pp.1136-1142
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• 2010

In this paper, we reduced the optical noise interference using the ASK modulation with optoelectronic feedback in a wireless optical system in which a lighting LED is used as a light source. The carrier frequency of 70 kHz was generated internally by the oscillation in the optoelectronic feedback circuit, and the output light was ASK modulated at a data rate of 9.6 kbps by opening and shortening the feedback loop with the input signal. In an environment with adjacent noise lights, the ASK modulation with optoelectronic feedback improved the signal to noise ratio by about 25 dB.

• Journal of the Korean Institute of Telematics and Electronics
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• v.11 no.1
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• pp.40-46
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• 1974

This paper deals with the self-excited mixer using tunnel diode oscillator operated as a microwave source and Doppler signal detector. The system impedance, the oscillation condition and the frequency conversion theory including moving target are investigated. The oscillating frequency and the output of tunnel diode oscillator are 2.035 GHz and 0.1 mW. The input signal frequency which is equivalent to Doppler signal is lower than tunnel diode oscillator frequency by 125 MHz. TDe conversion loss has been investigated as a functicn of input signal level. This loss is greater than 67 db for the large pump mode.