• 제목/요약/키워드: Source impedance

검색결과 378건 처리시간 0.026초

EMTP를 이용한 전압원으로의 배전계통 고저항 사고 모델링 기법 (A Modelling Method of a High Impedance Fault in a Distribution System as a Voltage Source using EMTP)

  • 강용철;남순열;박종근;장성일
    • 대한전기학회논문지:전력기술부문A
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    • 제48권11호
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    • pp.1388-1393
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    • 1999
  • A more reliable algorithm for detecting a high impedance fault (HIF) requires fault currents at the relaying point containing information of load condition as well as HIF characteristics. This paper presents a modeling method of an HIF in a distribution system using EMTP. From the voltage and current waveforms of HIF experiment, the voltage-current characteristic is obtained and then piecewise linearized. The proposed method gets several points on the linearized voltage-current curve and then represents nonlinearity as piecewise linear resistances using Transient Analysis of Control Systems (TACS) in EMTP. Thus, an HIF is represented as a voltage source in the first and third quadrants of voltage-current plane. The method is implemented in EMTP and thus the voltage and current at the relaying point can be obtained when an HIF occurs. In this paper, an HIF was simulated on various load conditions and fault conditions in 22.9 [kV] distribution systems.

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커패시터의 ESR을 고려한 Quasi Z-소스 인버터의 임피던스 네트워크 설계 (Designing Impedance Network at Quasi Z-Source Inverters by Considering ESR in the Capacitor)

  • 양종호;전태원;이홍희;김흥근;노의철
    • 전력전자학회논문지
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    • 제17권5호
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    • pp.453-460
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    • 2012
  • This paper proposes the method to design the parameters of an impedance network at three-phase QZSI(quasi Z-source inverter) by considering an equivalent series resistance (ESR) in the capacitor. The equations of both two capacitor voltages and two inductor currents are derived at three operating modes of the QZSI. The capacitor voltage ripples caused by the ESR in the capacitor at the transition state of operating modes are calculated. Based on the ripples of both the capacitor voltages and inductor currents, the optimal values of capacitor and inductor are designed. The simulation studies using PSIM and experimental results with DSP are carried out to verify the performance of design method.

유한배플의 영향을 고려한 정방형 진동면의 방사임피던스계산 (Calculation of Radiation Impedance for Rectangular Piston Vibrators with Finite Baffle)

  • 김무준;김천덕;하강열
    • 한국음향학회지
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    • 제19권7호
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    • pp.3-6
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    • 2000
  • 일반적으로 보고되어있는 방사임피던스는 무한강체 배플에 진동면을 두고있는 경우에 대하여 계산되어져 있어, 실제 유한한 크기의 배플을 갖는 트랜스듀서의 설계에는 적용하기 어려운 경우가 많다. 본 연구에서는 피스톤의 진동면을 작은 점음원의 모임으로 가정하고, 각 점음원의 음원강도와 배플의 크기를 관련지어 유한배플을 갖는 진동면에 대한 방사임피던스의 새로운 계산법을 제안하였다. 그에 대한 예로서 정방형의 피스톤 진동면에 대하여 배플의 크기에 따른 자기방사임피던스의 변화를 계산함으로써 제안한 방법의 유효성을 확인하였다.

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Impedance Calculation for Vacuum Components in Pohang Light Source Storage Ring

  • 주영도;이병준;손영욱;유인하;전명환;박인수;김승환;하태균;공형섭;손윤규;박용정;박종도;남상훈
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.151.2-151.2
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    • 2014
  • Broadband impedances for the 3-GeV pohang light source-II (PLS-II) storage ring have been numerically estimated using a full three dimensional finite-difference time-domain code, CST particle studio. The total broadband impedance of all the vacuum components was estimated as 0.256 ohm, which is a small fraction of the total machine impedance budget.

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임피던스 변화를 이용한 선형 대기압 DBD 플라즈마 밀도 측정 (Plasma Density Measurement of Linear Atmospheric Pressure DBD Source Using Impedance Variation Method)

  • 신기원;이환희;권희태;김우재;서영철;권기청
    • 반도체디스플레이기술학회지
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    • 제17권2호
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    • pp.16-19
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    • 2018
  • The development speed of semiconductor and display device manufacturing technology is growing faster than the development speed of process equipment. So, there is a growing need for process diagnostic technology that can measure process conditions in real time and directly. In this study, a plasma diagnosis was carried out using impedance variation due to the plasma discharge. Variation of the measurement impedance appears as a voltage change at the reference impedance, and the plasma density is calculated using this. The above experiment was conducted by integrating the plasma diagnosis system and the linear atmospheric pressure DBD plasma source. It was confirmed that plasma density varies depending on various parameters (gas flow rate, $Ar/O_2$ mixture ratio, Input power).

ISO 10767-1에 기초한 유압 펌프의 유량 맥동 측정 및 정밀도 평가 (Measurement of Hydraulic Pump Flow Ripple Characteristics Based on the ISO 10767-1 and the Evaluation of the Measuring Accuracy)

  • 김지웅;강만곤;이일영
    • 유공압시스템학회논문집
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    • 제4권3호
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    • pp.22-27
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    • 2007
  • The source flow ripple and the source impedance in hydraulic pump are characteristic values showing fluid-borne vibration characteristics decisively. We cannot measure these two characteristic values directly, but can measure them by some indirect methods. One representative indirect measuring method is ISO 10767-1. The authors constructed a hardware and a software for the measuring method based on ISO 10767-1. Through the error evaluation of the measured results, accuracy of the measuring method using ISO 10767-1 was examined in detail.

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Blumlein 펄스파워 전원개발 및 방전특성 평가 (Evaluation of Discharge Characteristics Followed by the Development of Blumlein Pulsed Power Source)

  • 한상보;박상현
    • 조명전기설비학회논문지
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    • 제24권10호
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    • pp.99-105
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    • 2010
  • This paper discussed the theoretical simulation results for developing the blumlein pulsed power source and showed the circuit configuration and the discharge characteristics of the realistic manufactured pulsed power system. In the simulation, the output voltage characteristics at a load resistor showed the general impulse shape when the impedance of a single coaxial cable is matched with the that of a load resistor. In addition, it is confirmed that output values of the pulsed power can be easily controlled by the duplication of coaxial cables and the pulsed waveform showed the general impulse characteristics. Specifically, the inception discharge voltage in the gap distance of 5[mm] between needle and plane electrodes is about 20[kV] and which is lower than about 29[kV] in 9[mm] due to the difference of the reaching time of the inception voltage. Therefore, this paper showed that the output voltage of the blumlein pulsed power source can be easily controlled.

내장형 스위치드 커패시터 Quasi-Z-소스 인버터 (Embedded switched-capacitor quasi-Z-source inverter topology)

  • 이재원;현지석;전태원;이홍희;김흥근
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2016년도 추계학술대회 논문집
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    • pp.220-221
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    • 2016
  • This paper proposes an active switched-capacitor embedded quasi-Z-source inverter (ASC-EqZSI) topology. In order to improve boost ability, One diode and one switch device are added in the qZSI impedance network, and a single dc source is shifted in series with the inductor in the impedance network. The performances of the proposed topology are verified with simulation and experimental results.

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스위치드 변압기 Z-소스 인버터의 출력전압 특성에 관한 연구 (A Study on the Output Voltage Characteristic of Switched Trans Z-Source Inverter)

  • 김세진;정영국;임영철
    • 전력전자학회논문지
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    • 제18권2호
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    • pp.123-130
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    • 2013
  • This paper proposes the switched trans Z-source inverter(STZSI) which combined the characteristics of the trans Z-source inverter(TZSI) and the switched inductor Z-source inverter(SLZSI). The proposed STZSI has the same performance compared with the SLZSI which is improved the voltage boost performance of the conventional typical X-shaped ZSI, and it has advantage that circuit structure of Z-impedance network is more simple. And, in order to step up the voltage boost factor under the condition of the same duty ratio, unlike the SLZSI adding the inductors and diodes, the proposed method is dune by changing the turn ratio of trans primary winding of Z-impedance network. To confirm the validity of the proposed method, PSIM simulation and a DSP(TMS320F28335) based experiment were performed using trans with turn ratio 1 and 2 under the condition of the input DC voltage VI=50V, duty ratio D=0.1 and D=0.15. As a result, under the same input/ouput condition, the inverter arm voltage stress of the proposed method is reduced to about 15%-22% as compared with typical X-shaped ZSI, and the elements in Z-impedance network of the proposed method is reduced as compared with the SLZSI.

Chip Impedance Evaluation Method for UHF RFID Transponder ICs over Absorbed Input Power

  • Yang, Jeen-Mo;Yeo, Jun-Ho
    • ETRI Journal
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    • 제32권6호
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    • pp.969-971
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    • 2010
  • Based on a de-embedding technique, a new method is proposed which is capable of evaluating chip impedance behavior over absorbed power in flip-chip bonded UHF radio frequency identification transponder ICs. For the de-embedding, four compact co-planar test fixtures, an equivalent circuit for the fixtures, and a parameter extraction procedure for the circuit are developed. The fixtures are designed such that the chip can absorb as much power as possible from a power source without radiating appreciable power. Experimental results show that the proposed modeling method is accurate and produces reliable chip impedance values related with absorbed power.