• 제목/요약/키워드: Sorona

검색결과 5건 처리시간 0.022초

Electrochemical characterization of supercapacitors based on carbons derived from Sorona activated by ZnCl2

  • ;;김애란;남기석;유동진
    • 에너지공학
    • /
    • 제21권3호
    • /
    • pp.309-314
    • /
    • 2012
  • Carbons derived by the pyrolysis of Sorona activated by $ZnCl_2$ in the ratio of 1:20 and non-porogen Sorona carbons are used as the electrode materials in asymmetric electrochemical supercapacitors and electrochemical behavior is investigated. Scanning electron microscopy (SEM) reveals the porogen free carbons show a flake-like structure and the $ZnCl_2$-treated Sorona carbons have a loose, disjoint structure without any particular shape. Cyclic voltammetric (CV) studies show specific prolate rectangular shape and gives good capacitive properties.

실험계획법을 이용한 세슘보조 스퍼터링 공정의 특성분석 (Characterization of Cesium Assisted Sputtering Process Using Design of Experiment)

  • 민철홍;박성진;윤능구;김태선
    • 한국표면공학회지
    • /
    • 제40권4호
    • /
    • pp.165-169
    • /
    • 2007
  • Compared to conventional Indium Tin Oxide (ITO) film deposition methods, cesium (Cs) assisted sputtering offers higher film characteristics in terms of electrical, mechanical and optical properties. However, it showed highly non-linear characteristics between process input factors and equipment responses. Therefore, to maximize film quality, optimization of manufacturing process is essential and process characterization is the first step for process optimization. For this, we designed 2 level design of experiment (DOE) to analyze ITO film characteristics including film thickness, resistivity and transmittance. DC power, pressure, carrier flow, Cs temperature and substrate temperature were selected for process input variables. Through statistical effect analysis methods, relation between three types of ITO film characteristics and five kinds of process inputs are successfully characterized and eventually, it can be used to optimize Cs assisted sputtering processes for various types of film deposition.

텅스텐 화학적-기계적 연마 공정에서 부식방지막이 증착된 금속 컨디셔너 표면의 전기화학적 특성평가 (Electrochemical Characterization of Anti-Corrosion Film Coated Metal Conditioner Surfaces for Tungsten CMP Applications)

  • 조병준;권태영;김혁민;;박문석;박진구
    • 마이크로전자및패키징학회지
    • /
    • 제19권1호
    • /
    • pp.61-66
    • /
    • 2012
  • 반도체 산업에서 회로의 고집적화와 다층구조를 형성하기 위해 화학적-기계적 연마(CMP: Chemical-Mechanical Planarization) 공정이 도입되었으며 반도체 패턴의 미세화와 다층화에 따라 화학적-기계적 연마 공정의 중요성은 더욱 강조되고 있다. 화학적-기계적 연마공정이란 화학적 반응과 기계적 힘을 동시에 이용하여 표면을 평탄화하는 공정으로, 화학적-기계적 연마 공정은 압력, 속도 등의 공정조건과, 화학적 반응을 유도하는 슬러리(Slurry), 기계적 힘을 위한 패드 등에 의해 복합적으로 영향을 받는다. 패드 컨디셔닝이란 컨디셔너가 화학적-기계적 연마 공정 중에 지속적으로 패드 표면을 연마하여 패드의 손상된 부분을 제거하고 새로운 표면을 노출시켜 패드의 상태를 일정하게 유지시키는 것을 말한다. 한편, 금속박막의 화학적-기계적 연마 공정에 사용되는 슬러리는 금속박막과 산화반응을 하기 위하여 산화제를 포함하는데, 산화제는 금속 컨디셔너 표면을 산화시켜 부식을 야기한다. 컨디셔너의 표면부식은 반도체 수율에 직접적인 영향을 줄 수 있는 스크래치(Scratch) 등을 발생시킬 뿐만 아니라, 컨디셔너의 수명도 저하시키게 되므로 이를 방지하기 위한 노력이 매우 중요하다. 본 연구에서는 컨디셔너 표면에 슬러리와 컨디셔너 표면 간에 일어나는 표면부식을 방지하기 위하여 유기박막을 표면에 증착하여 부식을 방지하고자 하였다. 컨디셔너 제작에 사용되는 금속인 니켈과 니켈 합금을 기판으로 하고, 증착된 유기박막으로는 자기조립단분자막(SAM: Self-Assembled Monolayer)과 불화탄소(FC: FluoroCarbon) 박막을 증착하였다. 자기조립단분자막은 2가지 전구체(Perfluoroctyltrichloro silane(FOTS), Dodecanethiol(DT))를 사용하여 기상 자기조립 단분자막 증착(Vapor SAM) 방법으로 증착하였고, 불화탄소막은 10 nm, 50 nm, 100 nm 두께로 PE-CVD(Plasma Enhanced-Chemical Vapor Deposition, SRN-504, Sorona, Korea) 방법으로 증착하여 표면의 부식특성을 평가하였다. 표면 부식 특성은 동전위분극법(Potentiodynamic Polarization)과 전기화학적 임피던스 측정법(Electrochemical Impedance Spectroscopy(EIS)) 등의 전기화학 분석법을 사용하여 평가되었다. 또한 측정된 임피던스 데이터를 전기적 등가회로(Electrical Equivalent Circuit) 모델에 적용하여 부식 방지 효율을 계산하였다. 동전위분극법과 EIS의 결과 분석으로부터 유기박막이 증착된 표면의 부식전류밀도가 감소하고, 임피던스가 증가하는 것을 확인하였다.

기상 자기조립박막 법을 이용한 나노임프린트용 점착방지막 형성 및 특성평가 (Deposition and Characterization of Antistiction Layer for Nanoimprint Lithography by VSAM (Vapor Self Assembly Monolayer))

  • 차남구;김규채;박진구;정준호;이응숙;윤능구
    • 한국재료학회지
    • /
    • 제17권1호
    • /
    • pp.31-36
    • /
    • 2007
  • Nanoimprint lithography (NIL) is a new lithographic method that offers a sub-10nm feature size, high throughput, and low cost. One of the most serious problems of NIL is the stiction between mold and resist. The antistiction layer coating is very effective to prevent this stiction and ensure the successful NIL results. In this paper, an antistiction layer was deposited by VSAM (vapor self assembly monolayer) method on silicon samples with FOTS (perfluoroctyltrichlorosilane) as a precursor for making an antistiction layer. A specially designed LPCVD (low pressure chemical vapor deposition) was used for this experiment. All experiments were achieved after removing the humidity. First, the evaporation test of FOTS was performed for checking the evaporation temperature at low pressure. FOTS was evaporated at 5 Tow and $110^{\circ}C$. In order to evaluate the temperature effect on antistiction layer, chamber temperature was changed from 50 to $170^{\circ}C$ with 0.1ml of FOTS for 1 minute. Good hydrophobicity of all samples was shown at about $110^{\circ}$ of contact angle and under $20^{\circ}$ of hysteresis. The surface energies of all samples calculated by Lewis acid/base theory was shown to be about 15mN/m. The deposited thicknesses of all samples measured by ellipsometry were almost 1nm that was similar value of the calculated molecular length. The surface roughness of all samples was not changed after deposition but the friction force showed relatively high values and deviations deposited at under $110^{\circ}$. Also the white circles were founded in LFM images under $110^{\circ}$. High friction forces were guessed based on this irregular deposition. The optimized VSAM process for FOTS was achieved at $170^{\circ}C$, 5 Torr for 1 hour. The hot embossing process with 4 inch Si mold was successfully achieved after VSAM deposition.