• Title/Summary/Keyword: Sorona

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Electrochemical characterization of supercapacitors based on carbons derived from Sorona activated by ZnCl2

  • Jisha, M.R.;Christy, Maria;Kim, Ae Rhan;Nahm, Kee Suk;Yoo, Dong Jin
    • Journal of Energy Engineering
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    • v.21 no.3
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    • pp.309-314
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    • 2012
  • Carbons derived by the pyrolysis of Sorona activated by $ZnCl_2$ in the ratio of 1:20 and non-porogen Sorona carbons are used as the electrode materials in asymmetric electrochemical supercapacitors and electrochemical behavior is investigated. Scanning electron microscopy (SEM) reveals the porogen free carbons show a flake-like structure and the $ZnCl_2$-treated Sorona carbons have a loose, disjoint structure without any particular shape. Cyclic voltammetric (CV) studies show specific prolate rectangular shape and gives good capacitive properties.

Characterization of Cesium Assisted Sputtering Process Using Design of Experiment (실험계획법을 이용한 세슘보조 스퍼터링 공정의 특성분석)

  • Min, Chul-Hong;Park, Sung-Jin;Yoon, Neung-Goo;Kim, Tae-Seon
    • Journal of the Korean institute of surface engineering
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    • v.40 no.4
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    • pp.165-169
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    • 2007
  • Compared to conventional Indium Tin Oxide (ITO) film deposition methods, cesium (Cs) assisted sputtering offers higher film characteristics in terms of electrical, mechanical and optical properties. However, it showed highly non-linear characteristics between process input factors and equipment responses. Therefore, to maximize film quality, optimization of manufacturing process is essential and process characterization is the first step for process optimization. For this, we designed 2 level design of experiment (DOE) to analyze ITO film characteristics including film thickness, resistivity and transmittance. DC power, pressure, carrier flow, Cs temperature and substrate temperature were selected for process input variables. Through statistical effect analysis methods, relation between three types of ITO film characteristics and five kinds of process inputs are successfully characterized and eventually, it can be used to optimize Cs assisted sputtering processes for various types of film deposition.

Electrochemical Characterization of Anti-Corrosion Film Coated Metal Conditioner Surfaces for Tungsten CMP Applications (텅스텐 화학적-기계적 연마 공정에서 부식방지막이 증착된 금속 컨디셔너 표면의 전기화학적 특성평가)

  • Cho, Byoung-Jun;Kwon, Tae-Young;Kim, Hyuk-Min;Venkatesh, Prasanna;Park, Moon-Seok;Park, Jin-Goo
    • Journal of the Microelectronics and Packaging Society
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    • v.19 no.1
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    • pp.61-66
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    • 2012
  • Chemical Mechanical Planarization (CMP) is a polishing process used in the microelectronic fabrication industries to achieve a globally planar wafer surface for the manufacturing of integrated circuits. Pad conditioning plays an important role in the CMP process to maintain a material removal rate (MRR) and its uniformity. For metal CMP process, highly acidic slurry containing strong oxidizer is being used. It would affect the conditioner surface which normally made of metal such as Nickel and its alloy. If conditioner surface is corroded, diamonds on the conditioner surface would be fallen out from the surface. Because of this phenomenon, not only life time of conditioners is decreased, but also more scratches are generated. To protect the conditioners from corrosion, thin organic film deposition on the metal surface is suggested without requiring current conditioner manufacturing process. To prepare the anti-corrosion film on metal conditioner surface, vapor SAM (self-assembled monolayer) and FC (Fluorocarbon) -CVD (SRN-504, Sorona, Korea) films were prepared on both nickel and nickel alloy surfaces. Vapor SAM method was used for SAM deposition using both Dodecanethiol (DT) and Perfluoroctyltrichloro silane (FOTS). FC films were prepared in different thickness of 10 nm, 50 nm and 100 nm on conditioner surfaces. Electrochemical analysis such as potentiodynamic polarization and impedance, and contact angle measurements were carried out to evaluate the coating characteristics. Impedance data was analyzed by an electrical equivalent circuit model. The observed contact angle is higher than 90o after thin film deposition, which confirms that the coatings deposited on the surfaces are densely packed. The results of potentiodynamic polarization and the impedance show that modified surfaces have better performance than bare metal surfaces which could be applied to increase the life time and reliability of conditioner during W CMP.

Deposition and Characterization of Antistiction Layer for Nanoimprint Lithography by VSAM (Vapor Self Assembly Monolayer) (기상 자기조립박막 법을 이용한 나노임프린트용 점착방지막 형성 및 특성평가)

  • Cha, Nam-Goo;Kim, Kyu-Chae;Park, Jin-Goo;Jung, Jun-Ho;Lee, Eung-Sug;Yoon, Neung-Goo
    • Korean Journal of Materials Research
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    • v.17 no.1
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    • pp.31-36
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    • 2007
  • Nanoimprint lithography (NIL) is a new lithographic method that offers a sub-10nm feature size, high throughput, and low cost. One of the most serious problems of NIL is the stiction between mold and resist. The antistiction layer coating is very effective to prevent this stiction and ensure the successful NIL results. In this paper, an antistiction layer was deposited by VSAM (vapor self assembly monolayer) method on silicon samples with FOTS (perfluoroctyltrichlorosilane) as a precursor for making an antistiction layer. A specially designed LPCVD (low pressure chemical vapor deposition) was used for this experiment. All experiments were achieved after removing the humidity. First, the evaporation test of FOTS was performed for checking the evaporation temperature at low pressure. FOTS was evaporated at 5 Tow and $110^{\circ}C$. In order to evaluate the temperature effect on antistiction layer, chamber temperature was changed from 50 to $170^{\circ}C$ with 0.1ml of FOTS for 1 minute. Good hydrophobicity of all samples was shown at about $110^{\circ}$ of contact angle and under $20^{\circ}$ of hysteresis. The surface energies of all samples calculated by Lewis acid/base theory was shown to be about 15mN/m. The deposited thicknesses of all samples measured by ellipsometry were almost 1nm that was similar value of the calculated molecular length. The surface roughness of all samples was not changed after deposition but the friction force showed relatively high values and deviations deposited at under $110^{\circ}$. Also the white circles were founded in LFM images under $110^{\circ}$. High friction forces were guessed based on this irregular deposition. The optimized VSAM process for FOTS was achieved at $170^{\circ}C$, 5 Torr for 1 hour. The hot embossing process with 4 inch Si mold was successfully achieved after VSAM deposition.