• Title/Summary/Keyword: Solution-processed

Search Result 555, Processing Time 0.036 seconds

Investigation on Resistive Switching Characteristics of Solution Processed Al doped Zn-Tin Oxide film

  • Hwang, Do-Yeon;Park, Dong-Cheol;Jo, Won-Ju
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2015.08a
    • /
    • pp.180-180
    • /
    • 2015
  • Solution processed Resistive random access memory (ReRAM)은 간단한 공정 과정, 고집적도, 저렴한 가격, 대면적화 플라즈마 데미지 최소화 등의 장점으로 차세대 비휘발성 메모리로 써 많은 관심을 받고 있으며, 주로 high-k 물질인 HfOx, TiOx, ZnO 가 이용 된다. IGZO와 ZTO와 같은 산화물 반도체는 높은 이동도, 대면적화, 넓은 밴드갭으로 인하여 투명한 장점으로 LCDs (Liquid crystal displays)에 이용 가능하며, 최근에는 IGZO와 ZTO에서 Resistive Switching (RS) 특성을 확인한 논문이 보고되면서 IGZO와 ZTO를 ReRAM의 switching medium와 TFT의 active material로써 동시에 활용하는 것에 많은 관심을 받고 있다. 이와 같은 산화물 반도체는 flat panel display 회로에 TFT와 ReRAM의 active layer로써 집적가능 하며 systems-on-panels (SOP)에 적용 가능하다. 하지만 IGZO 보다는 ZTO가 In과 Ga을 포함하지 않기 때문에 저렴하다. 그러므로 IGZO를 대신하는 물질로 ZTO가 각광 받고 있다. 본 실험에서는 ZTO film에 Al을 doping하여 메모리 특성을 평가하였다. 실험 방법으로는 p-type Si에 습식산화를 통하여 SiO2를 300 nm 성장시킨 기판을 사용하였다. 그리고 Electron beam evaporator를 이용하여 Ti를 10 nm, Pt를 100 nm 증착 한다. 용액은 Zn와 Tin의 비율을 1:1로 고정한 후 Al의 비율을 0, 0.1, 0.2의 비율로 용액을 각각 제작하였다. 이 용액을 이용하여 Pt 위에 spin coating방법을 이용하여 1000 rpm 10초, 6000 rpm 30초의 조건으로 AZTO (Al-ZnO-Tin-Oxide) 박막을 증착한 뒤, solvent 및 불순물 제거를 위하여 $250^{\circ}C$의 온도로 30분 동안 열처리를 진행하였다. 이후 Electron beam evaporator를 이용하여 top electrode인 Ti를 100 nm 증착하였다. 제작된 메모리의 전기적 특성은 HP 4156B semiconductor parameter analyzer를 이용하여 측정하였다. 측정 결과, AZTO (0:1:1, 0.1:1:1, 0.2:1:1)를 이용하여 제작한 ReRAM에서 RS특성을 얻었으며 104 s이상의 신뢰성 있는 data retention특성을 확인하였다. 그리고 Al의 비율이 증가할수록 on/off ratio가 증가하고 endurance 특성이 향상되는 것을 확인하였다. 결론적으로 Al을 doping함으로써 ZTO film의 메모리 특성을 향상 시켰으며 AZTO film을 메모리와 트랜지스터의 active layer로써 활용 가능할 것으로 기대된다.

  • PDF

Aging effect of Solution-Processed InGaZnO Thin-Film-Transistors Annealed by Conventional Thermal Annealing and Microwave Irradiation

  • Kim, Gyeong-Jun;Lee, Jae-Won;Jo, Won-Ju
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2015.08a
    • /
    • pp.211.1-211.1
    • /
    • 2015
  • 최근 용액 공정을 이용한 산화물 반도체에 대한 연구가 활발히 진행되고 있다. 넓은 밴드갭을 가지고 있는 산화물 반도체는 높은 투과율을 가지고 있어 투명 디스플레이에 적용이 가능하다. 기존의 박막 진공증착 방법은 진공상태를 유지하기 위한 장비의 가격이 비싸며, 대면적의 어려움, 높은 생산단가 등으로 생산율이 높지 않다. 하지만 용액 공정을 이용하면 대기압에서 증착이 가능하고 대면적화가 가능하다. 그리고 각각의 조성비를 조절하는 것이 가능하다. 이러한 장점에도 불구하고, 소자의 신뢰성이나 저온공정은 중요한 이슈이다. Instability는 threshold voltage (Vth)의 shift 및 on/off switching의 신뢰성과 관련된 parameter이다. 용액은 소자의 전기적 특성을 열화 시키는 수분 과 탄소계열의 불순물을 다량 포함 하고 있어 고품질의 박막을 형성하기 위해서는 고온의 열처리가 필요하다. 기존의 열처리는 고온에서 장시간 이루어지기 때문에 유리나 플라스틱, 종이 기판의 소자에서는 불가능하지만 $100^{\circ}C$ 이하의 저온 공정인 microwave를 이용하면 유리, 플라스틱, 종이 기판에서도 적용이 가능하다. 본 연구에서는 산화물 반도체 중에서 InGaZnO (IGZO)를 용액 공정으로 제작한 juctionless thin-film transistor를 제작하여 기존의 열처리를 이용하여 처리한 소자와 microwave를 이용해서 열처리한 소자의 전기적 특성을 한 달 동안 관찰 하였다. 또한 In:Zn의 비율을 고정한 후 Ga의 비율을 달리하여 특성을 비교하였다. 먼저 p-type bulk silicon 위에 SiO2 산화막이 100 nm 증착된 기판에 RCA 클리닝을 진행 하였고, solution InGaZnO 용액을 spin coating 방식으로 증착하였다. Coating 후에, solvent와 수분을 제거하기 위해서 $180^{\circ}C$에서 10분 동안 baking공정을 하였다. 이후 furnace열처리와 microwave열처리를 비교하기 위해 post-deposition-annealing (PDA)으로 furnace N2 분위기에서 $600^{\circ}C$에서 30분, microwave를 1800 W로 2분 동안 각각의 샘플에 진행하였다. 또한, HP 4156B semiconductor parameter analyzer를 이용하여 제작된 TFT의 transfer curve를 측정하였다. 그 결과, microwave 열처리한 소자의 경우 기존의 furnace 열처리 소자와 비교하여 높은 mobility, 낮은 hysteresis 값을 나타내었으며, 1달간 소자의 특성을 관찰하였을 때 microwave 열처리한 소자의 경우 전기적 특성이 거의 변하지 않는 것을 확인하였다. 따라서 향후 용액공정, 저온공정을 요구하는 소자 공정에 있어 열처리방법으로 microwave를 이용한 활용이 기대된다.

  • PDF

Solution Processed Hexaazatrinaphthylene derivatives as a efficient hole injection layer for phosphorescent organic light-emitting diodes (신규 용액공정 정공주입층 소재 Hexaazatrinaphthylene 유도체를 도입한 인광 유기전기발광소자)

  • Lee, Jangwon;Sung, Baeksang;Lee, Seung-Hoon;Yoo, Jae-Min;Lee, Jae-Hyun;Lee, Jonghee
    • Journal of IKEEE
    • /
    • v.24 no.3
    • /
    • pp.706-712
    • /
    • 2020
  • To improve light-emitting performance of green phosphorescent organic light-emitting diodes (OLEDs), we introduced new hole injection materials-hexaazatrinaphthylene (HATNA) derivatives as a solution processed hole injection layer (HIL). The HATNA derivative has a low the lowest unoccupied molecular orbital (LUMO) energy level, similar to the work function of Indium Tin Oxide (ITO), showing a different concept of hole injection mechanism. It was confirmed that the device efficiency of OLEDs using HATNA-HIL showed the improved external quantum efficiency from 10.8% to 15.6% and current efficiency from 32.7 cd/A to 42.7 cd/A due to the balance of electrons and holes in the emissive layer.

Recycling of Organic Materials Using Purification by Recrystallization for Solution-Processed OLEDs (재결정화법에 의한 유기물 재활용 및 이를 이용한 습식 OLED 제작)

  • Lee, Jin-Hwan;Hong, Ki-Young;Shin, Dong-Kyun;Lee, Jin-Young;Park, Jong-Woon;Seo, Hwa-Il;Seo, Yu Seok
    • Journal of the Semiconductor & Display Technology
    • /
    • v.15 no.1
    • /
    • pp.65-69
    • /
    • 2016
  • We have investigated the possibility of recycling of an organic material that is wasted during thermal evaporation. To this end, we have collected a wasted organic material (N,N'-diphenly-N,N'-bis(1,1'-biphenyl)-4,4'-diamine(NPB)) from a vacuum chamber, purified it by recrystallization, and fabricated bilayer organic light-emitting diodes (OLEDs) with the recycled NPB. It is found that the surface roughness of thin films coated with the purified NPB is much enhanced. OLEDs fabricated by thermal evaporation of the purified NPB show lower device efficiency than OLEDs with the original NPB. However, the power efficiency of OLED fabricated by spin coating of the purified NPB is comparable with that of OLED with the original NPB. Therefore, such a recycling method by recrystallization would be more suitable for solution-processed OLEDs.

Effect of Thin-Film Thickness on Electrical Performance of Indium-Zinc-Oxide Transistors Fabricated by Solution Process (용액 공정을 이용한 IZO 트랜지스터의 전기적 성능에 대한 박막 두께의 영향)

  • Kim, Han-Sang;Kyung, Dong-Gu;Kim, Sung-Jin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.30 no.8
    • /
    • pp.469-473
    • /
    • 2017
  • We investigated the effect of different thin-film thicknesses (25, 30, and 40 nm) on the electrical performance of solution-processed indium-zinc-oxide (IZO) thin-film transistors (TFTs). The structural properties of the IZO thin films were investigated by atomic force microscopy (AFM). AFM images revealed that the IZO thin films with thicknesses of 25 and 40 nm exhibit an uneven distribution of grains, which deforms the thin film and degrades the performance of the IZO TFT. Further, the IZO thin film with a thickness of 30 nm exhibits a homogeneous and smooth surface with a low RMS roughness of 1.88 nm. The IZO TFTs with the 30-nm-thick IZO film exhibit excellent results, with a field-effect mobility of $3.0({\pm}0.2)cm^2/Vs$, high Ion/Ioff ratio of $1.1{\times}10^7$, threshold voltage of $0.4({\pm}0.1)V$, and subthreshold swing of $0.7({\pm}0.01)V/dec$. The optimization of oxide semiconductor thickness through analysis of the surface morphologies can thus contribute to the development of oxide TFT manufacturing technology.

Solution-Processed Fluorine-Doped Indium Gallium Zinc Oxide Channel Layers for Thin-Film Transistors (용액공정용 불소 도핑된 인듐 갈륨 징크 산화물 반도체의 박막 트랜지스터 적용 연구)

  • Jeong, Sunho
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.26 no.3
    • /
    • pp.59-62
    • /
    • 2019
  • In this study, we have developed solution-processed, F-doped In-Ga-Zn-O semiconductors and investigated their applications to thin-film transistors. In order for forming the appropriate channel layer, precursor solutions were formulated by dissolving the metal salts in the designated solvent and an additive, ammonium fluoride, was incorporated additionally as a chemical modifier. We have studied thermal and chemical contributions by a thermal annealing and an incorporation of chemical modifier, from which it was revealed that electrical performances of the thin-film transistors comprising the channel layer annealed at a low temperature can be improved significantly along with an addition of ammonium fluoride. As a result, when the 20 mol% fluorine was incorporated into the semiconductor layer, electrical characteristics were accomplished with a field-effect mobility of $1.2cm^2/V{\cdot}sec$ and an $I_{on}/_{off}$ of $7{\times}10^6$.

Solution-Processed Metal Oxide Thin Film Nanostructures for Water Splitting Photoelectrodes: A Review

  • Lee, Mi Gyoung;Park, Jong Seong;Jang, Ho Won
    • Journal of the Korean Ceramic Society
    • /
    • v.55 no.3
    • /
    • pp.185-202
    • /
    • 2018
  • Photoelectrochemical (PEC) cells can convert solar energy, the largest potential source of renewable energy, into hydrogen fuel which can be stored, transported, and used on demand. In terms of cost competitiveness compared with fossil fuels, however, both photocatalytic efficiency and cost-effectiveness must be achieved simultaneously. Improvement of cost-effective, scalable, versatile, and eco-friendly fabrication methods has emerged as an urgent mission for PEC cells, and solution-based fabrication methods could be capable of meeting these demands. Herein, we review recent challenges for various nanostructured oxide photoelectrodes fabricated by solution-based processes. Hematite, tungsten oxide, bismuth vanadate, titanium oxide, and copper oxides are the main oxides focused on, and various strategies have been attempted with respect to these photocatalyst materials. The effects of nanostructuring, heterojunctions, and co-catalyst loading on the surface are discussed. Our review introduces notable solution-based processes for water splitting photoelectrodes and gives an outlook on eco-friendly and cost-effective approaches to solar fuel generation and innovative artificial photosynthesis technologies.

PROPER ORTHOGONAL DECOMPOSITION OF DISCONTINUOUS SOLUTIONS WITH THE GEGENBAUER POST-PROCESSING

  • SHIN, BYEONG-CHUN;JUNG, JAE-HUN
    • Journal of the Korean Society for Industrial and Applied Mathematics
    • /
    • v.23 no.4
    • /
    • pp.301-327
    • /
    • 2019
  • The proper orthogonal decomposition (POD) method for time-dependent problems significantly reduces the computational time as it reduces the original problem to the lower dimensional space. Even a higher degree of reduction can be reached if the solution is smooth in space and time. However, if the solution is discontinuous and the discontinuity is parameterized e.g. with time, the POD approximations are not accurate in the reduced space due to the lack of ability to represent the discontinuous solution as a finite linear combination of smooth bases. In this paper, we propose to post-process the sample solutions and re-initialize the POD approximations to deal with discontinuous solutions and provide accurate approximations while the computational time is reduced. For the post-processing, we use the Gegenbauer reconstruction method. Then we regularize the Gegenbauer reconstruction for the construction of POD bases. With the constructed POD bases, we solve the given PDE in the reduced space. For the POD approximation, we re-initialize the POD solution so that the post-processed sample solution is used as the initial condition at each sampling time. As a proof-of-concept, we solve both one-dimensional linear and nonlinear hyperbolic problems. The numerical results show that the proposed method is efficient and accurate.

Conservation of artifacts excavated from Imdang, Kyǒngsan Province-Metals and Lacquerware (경산시 임당유적 출토 유물 보존처리-금속 및 칠기유물을 중심으로)

  • Yu, Jae-Eun;Shin, Ui-Kyoung;Hwang, Jin-Ju;Goh, Dong-Ha
    • 보존과학연구
    • /
    • s.19
    • /
    • pp.109-132
    • /
    • 1998
  • According to excavation of Imdang site, these sites were excavated place to a various of sites from Early lron period to the Koryo Kingdom. Artifacts to be conserved were excavated from A, D and E district. Metal artifacts were excavated from D and E district and lacquer ware artifacts were excavated from Adistrict. Metal artifacts including lacquer ware iron sword, imitative bronze mirror, Osujen and bronze artifact with letter and so on. Bronze artifacts were covered with soil and rust and performed consolidation after passivation treatment with Benzotriazole solution. Also, iron artifacts performed desalting treatment with 0.1M sesquicarbonate solution. After desalinization, adhesive of these artifacts were processed with Araldite(rapid type) after consolidation with20%∼30% NAD-10 solution. Lacquer ware artifacts remained fragments of lacquer to be all corroded and soiled. Therefore these artifacts retained its original form. Fragments of lacquer joined with Caparol 1%∼3% solution and the soil of relics coated with PSNY 3%∼6% solution. There were many kinds of lacquer were. Lacquer ware artifacts presumed to a string instrument that provide important clues for lacquer ware research. As for lacquer fragments inquire, paints grain size were $2∼5\mum$ and conformed to vanished three times.

  • PDF

Characteristics of Yogurt Prepared with ′Jinpum′ Bean and Sword Bean(Canavalin gladiata) (진품콩과 작두콩을 이용한 요구르트 가공 특성)

  • 주선종;최금주;김기식;이재웅;박성규
    • Food Science and Preservation
    • /
    • v.8 no.3
    • /
    • pp.308-312
    • /
    • 2001
  • This study was conducted to investigate the characteristics of yogurt prepared with different mixing ratios of 'Jinpum ' bean and sword bean(Canavalin gladiata). The crude protein content of 'Jinpum' bean used raw material was 38.0%, whereas that of sword bean was 27.5%. The pH and sugar content of ferment solution were deceased significantly up to 4 hours after strain inoculation but reduced slowly artier 8 hours. The content of organic acid and lactic ferments were increased. After 20 hours fermentation there was no significant differences between yogurt processed with 100% 'Jinpum' bean and yogurt processed with 95% 'Jinpum' bean and 5% sword bean. The number of lactic acid bacteria in yogurt processed with 95% 'Jinpum' bean and 5% sword bean was increased up to 20 hours but thereafter was decreased rapidly, showing the similar values compared to that of yogurt processed with 100% 'Jinpum' bean. The color values of yogurt processed with 95% 'Jinpum' bean and 5% sword bean artier 20 hours fermentation were similar to that of yogurt processed with 100% 'Jinpum' bean whereas those of yogurt processed with 90% 'Jinpum' bean and 10% sword bean were no little difference before and after fermentation. In the result of sensory test of yogurt prepared with 95% 'Jinpum' bean and 5% sword bean, adding strawberry syrup was more preferred than apple syrup.

  • PDF