• 제목/요약/키워드: Solution film thickness

검색결과 376건 처리시간 0.039초

A topological metal at the surface of an ultrathin BiSb alloy film

  • Hirahara, T.;Sakamoto, Y.;Saisyu, Y.;Miyazaki, H.;Kimura, S.;Okuda, T.;Matsuda, I.;Murakami, S.;Hasegawa, S.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.14-15
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    • 2010
  • Recently there has been growing interest in topological insulators or the quantum spin Hall (QSH) phase, which are insulating materials with bulk band gaps but have metallic edge states that are formed topologically and robust against any non-magnetic impurity [1]. In a three-dimensional material, the two-dimensional surface states correspond to the edge states (topological metal) and their intriguing nature in terms of electronic and spin structures have been experimentally observed in bulk Bi1-xSbx single crystals [2,3,4]. However, if we want to know the transport properties of these topological metals, high purity samples as well as very low temperature will be needed because of the contribution from bulk states or impurity effects. In a recent report, it was also shown that an intriguing coupling between the surface and bulk states will occur [5]. A simple solution to this bothersome problem is to prepare a topological metal on an ultrathin film, in which the surface-to-bulk ratio is drastically increased. Therefore in the present study, we have investigated if there is a method to make an ultrathin Bi1-xSbx film on a semiconductor substrate. From reflection high-energy electron diffraction observation, it was found that single crystal Bi1-xSbx films (0${\sim}30\;{\AA}A$ can be prepared on Si(111)-$7{\times}7$. The transport properties of such films were characterized by in situ monolithic micro four-point probes [6]. The temperature dependence of the resistivity for the x=0.1 samples was insulating when the film thickness was $240\;{\AA}A$. However, it became metallic as the thickness was reduced down to $30\;{\AA}A$, indicating surface-state dominant electrical conduction. Figure 1 shows the Fermi surface of $40\;{\AA}A$ thick Bi0.92Sb0.08 (a) and Bi0.84Sb0.16 (b) films mapped by angle-resolved photoemission spectroscopy. The basic features of the electronic structure of these surface states were shown to be the same as those found on bulk surfaces, meaning that topological metals can be prepared at the surface of an ultrathin film. The details will be given in the presentation.

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Ferrite plating 방법에 의한 $Fe_{3-x}Mn_{x}O_4$ 박막 제작과 자기적 성질 (Preparation of $Fe_{3-x}Mn_{x}O_4$ Films by the Ferrite Plating and its Magnetic Properties)

  • 하태욱;이정식
    • 한국자기학회지
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    • 제6권3호
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    • pp.145-150
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    • 1996
  • Ferrite plating 방법은 진공이 불필요하고, 저온(< $100^{\circ}C$)에서 페라이트 박막을 제작할 수 있다. 이 방법으로 유리 기판위에 $80^{\circ}C$에서 $Fe_{3-x}Mn_{x}O_4(x=0.0~0.023)$의 페라이트 박막을 제작하였다. 박막은 60분간 성장시켰으며, 막의두께는 약 $9000\AA$이었고, 거울면과 같은 광택을 지녔다. X-선 회절 실험으로 스피넬 구조의 단일상을 확인하였다. $Fe_{3-x}Mn_{x}O_4$ 박막의 구성비 x는 반응용액에서의 구성비 x'에 비해 매우낮다(x/x'=0.04). $Fe_{3}O_{4}$ ferrite 박막의 포화자화($M_{s}$)는 480 emu/cc로써 bulk 시료와 비슷한 값을 가졌다.

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Local Back Contact Formed by Screen Printing and Atomic Layer Deposited Al2O3 for Silicon Solar Cell

  • 조영준;장효식
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.687-687
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    • 2013
  • In rearpoint contact solar cell and the PERC (passivated emitter rear contact) type cell, surfaces were passivated by SiO2 or Al2O3 to increase solar cell efficiency. Therefore, we have investigated the effect of surface passivation for crystalline silicon solarcell using mass-production atomic layer deposited (ALD) Al2O3. The patttern which consists of cylinders with 100um diameter and 5um height was formed by PR patterning on Si (100) substrate and then Al2O3 of about 10nm and 20nm thickness was deposited by ALD. The pattern in 10 nm Al2O3 film was removed by dipping in aceton solution for about 10 min but the pattern in 20 nm Al2O3 film was not. The influences of process temperature and heat treatment were investigated using microwave photoconductance decay (PCD) and Quasi-Steady-State photoconductance (QSSPC). The solar cell process used in this work combines the advantage of using the applicability of a selective deposition associated with a ALD passivation and the use of low-cost screen print for the contacts formation.

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Preparation and Photoelectrochemical Behavior of Cu2O/TiO2 Inverse Opal Heterojunction Arrays

  • Kim, Hyun-Sik;Lee, Sang-Kwon;Kang, Soon-Hyung
    • 전기화학회지
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    • 제15권3호
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    • pp.149-153
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    • 2012
  • The $Cu_2O/TiO_2$ inverse opal heterojunction arrays were developed by electrochemical deposition of $Cu_2O$ nanoparticles on $TiO_2$ inverse opal arrays. The $Cu_2O$ nanoparticles completely filled the inner pores of $TiO_2$ inverse opal film (prepared by liquid phase deposition with an average thickness of 400 nm) and covered the entire area; exhibiting high crystalline properties of anatase and cubic phase from $TiO_2$ and $Cu_2O$, respectively. From asymmetric current-voltage profile, it was noticeable that a heterojunction was well formed for charge transport from $Cu_2O$ to $TiO_2$ film resulting from the enhanced charge separation yield. In addition, increased photocurrent of 0.19 $mA/cm^2$ (versus 0.08 $mA/cm^2$ under dark condition) was obtained at -0.35 V from the heterojunction structure in the 0.5M $Na_2SO_4$ solution.

DRAM용 PZT 박막 캐패시터의 유전특성 (Dielectric Properties of the PZT Thin Film Capacitors for DRAM Application)

  • 정장호;박인길;이성갑;이영희
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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    • pp.335-337
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    • 1995
  • In this study, $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramic thin films were fabricated from an alkoxide-based by Sol-Gel method. $Pb(Zr_{0.52}Ti_{0.48})O_3$ stock solution was made and spin-coated on the $Pt/SiO_2/Si$ substrate at 4000[rpm] for 30[sec]. Coated specimens were dried at 400[$^{\circ}C$] for 10 [min]. The coating process was repeated 4 times and then heat-treated at 500$\sim$800[$^{\circ}C$], 1 hour. The final thickness of the thin films were about 3000[A]. The crystallinity and microstructure of the thin films were investigated for varing the sintering condition. The ferroelectric perovskite' phases precipitated under the sintering of 700[$^{\circ}C$] for 1 hours. In the $Pb(Zr_{0.52}Ti_{0.48})O_3$ thin films sintered at 700[$^{\circ}C$] for 1 hour, dielectric constant and dielectric loss were 2133, 2.2[%] at room temperature, respectively. $Pb(Zr_{0.52}Ti_{0.48})O_3$ thin film capacitors having good dielectric and electrical properties are expected for the application to the dielectric material of DRAM.

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고효율 페로브스카이트 태양전지용 무기 금속 산화물 기반 정공수송층의 개발 (Development of Inorganic Metal Oxide based Hole-Transporting Layer for High Efficiency Perovskite Solar Cell)

  • 이하람;킴 마이;장윤희;이도권
    • Current Photovoltaic Research
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    • 제8권2호
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    • pp.60-65
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    • 2020
  • In perovskite solar cells with planar heterojunction configuration, selection of proper charge-transporting layers is very important to achieve stable and efficient device. Here, we developed solution processible Cu doped NiOx (Cu:NiOx) thin film as a hole-transporting layer (HTL) in p-i-n structured methylammonium lead trihalide (MAPbI3) perovskite solar cell. The transmittance and thickness of NiOx HTL is optimized by control the spin-coating rate and Cu is additionally doped to improve the surface morphology of undoped NiOx thin film and hole-extraction properties. Consequently, a perovskite solar cell containing Cu:NiOx HTL with optimal doping ratio of Cu exhibits a power conversion efficiency of 14.6%.

형광 나노 포러스 박막을 이용한 표면 온도 센서의 제작 및 성능 연구 I (Fabrication and Performance Investigation of Surface Temperature Sensor Using Fluorescent Nanoporous Thin Film I)

  • 김현정;유재석;박진일
    • 설비공학논문집
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    • 제25권12호
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    • pp.668-673
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    • 2013
  • In this study, specimens with nano-sized porous thin films were manufactured by injecting fluorescence solution into the pores. We intended to find out the difference of the fluorescence intensity in each region of the specimen through an experimental apparatus that makes a temperature field. Before conducting experiments, the optimized manufacturing conditions were determined by analysis of all parameters that influence the emission intensity, and the experiments were carried out with the specimens produced in the optimized conditions. Then, the calibration curves of the fluorescence intensity versus temperature were performed by taking the intensity distributions from the specimen in various temperature fields. The surfaces of specimens were coated with Rhodamine-B (Rh-B) fluorescent dye and measured based on the fluorescence intensity. Silica (SiO2) nanoporous structure with 1-um thickness was constructed on a cover glass, and fluorescence dye was absorbed into these porous thin films.

Room Temperature Growth of Magnetite Films on Arachic Acid Monomolecular Layers

  • Ishihara, Takashi;Kitamoto, Yoshitaka;Shirasaki, Fumio;Abe, Masanori
    • The Korean Journal of Ceramics
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    • 제6권4호
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    • pp.401-404
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    • 2000
  • Mimicking the bacterial synthesis of magnetosomes, in which the functionalized surface of a cytoplasmic (lipid) membrane is considered to be stimulating the crystal growth of magnetite, we have successfully grown magnetite films at $30^{\circ}C$ using an arachic acid monomolecular layer as a functionalized surface. The lipid monomolecular layer was spread on an aqueous solution of FeCl$_2$ which was oxidized by flowing a mixed gas, with ratio $O_2$/$N_2$=1/2000, on the surface of the lipid layer. Mossbauer and X-ray diffraction analyses revealed that the Fe$_3$O$_4$ films contain small amounts of ferric hydroxyl impurity phases of ${\alpha}$-FeOOH and ${\tau}$-FeOOH. This is because the oxygen partial pressure at the ferrite/aqueous interface changed as the film (through which the gas penetrated) increased in thickness. Methods to obtain single phase magnetite films are proposed.

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시편의 준비 방법 및 접촉저항이 알루미늄 합금의 아노다이징 피막 형성에 미치는 영향 (Effects of Specimen Preparation Method and Contact Resistance on the Formation of Anodizing Films on Aluminum Alloys)

  • 문성모
    • 한국표면공학회지
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    • 제53권1호
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    • pp.29-35
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    • 2020
  • In this study, five different specimen preparation methods were introduced and their advantages and disadvantages were presented. One of them, an epoxy mounting method has advantages of constant exposure area, ease of surface preparation without touching the specimen surface during polishing or cleaning, use of small amount of material and ease of specimen reuse by polishing or etching. However, in order to eliminate unexpected errors resulting from preferable reaction at the specimen/epoxy interface and contact resistance between the specimen and copper conducting line for electrical connection, it is recommended to cover the wall side of the specimen with porous anodic oxide films and to remain the contact resistance lower than 1 ohm. The increased contact resistance between the specimen and Cu conducting line appeared to result in increases of anodizing voltage and solution temperature during anodizing by which thickness and hardness of anodizing film on Al2024 alloy were drastically decreased and color of the films became more brightened.

알루미늄 6061 합금의 표면 나노 구조물 변화에 따른 방빙 특성 연구 (Anti-Icing Characteristics of Aluminum 6061 Alloys According to Surface Nanostructure)

  • 김리안;정찬영
    • Corrosion Science and Technology
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    • 제21권6호
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    • pp.476-486
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    • 2022
  • Recently, aluminum 6061 instead of copper alloy is used for cooling heat exchangers used in the internal combustion of engines due to its economic feasibility, lightweight, and excellent thermal conductivity. In this study, aluminum 6061 alloy was anodized with oxalic acid, phosphoric acid, or chromic acid as an anodizing electrolyte at the same concentration of 0.3 M. After the third anodization, FDTS, a material with low surface energy, was coated to compare hydrophobic properties and anti-icing characteristics. Aluminum was converted into an anodization film after anodization on the surface, which was confirmed through Energy Dispersive X-ray Spectroscopy (EDS). Pore distance, interpore distance, anodization film thickness, and solid fraction were measured with a Field Emission Scanning Electron Microscope (FESEM). For anti-icing, hydrophobic surfaces were anodized with oxalic acid, phosphoric acid, or chromic acid solution. The sample anodized in oxalic acid had the lowest solid fraction. It had the highest contact angle for water droplets and the lowest contact hysteresis angle. The anti-icing contact angle showed a tendency to decrease for specimens in all solutions.