• 제목/요약/키워드: Solid thin film cell

검색결과 80건 처리시간 0.024초

Powder Packing Behavior and Constrained Sintering in Powder Processing of Solid Oxide Fuel Cells (SOFCs)

  • Lee, Hae-Weon;Ji, Ho-Il;Lee, Jong-Ho;Kim, Byung-Kook;Yoon, Kyung Joong;Son, Ji-Won
    • 한국세라믹학회지
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    • 제56권2호
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    • pp.130-145
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    • 2019
  • Widespread commercialization of solid oxide fuel cells (SOFCs) is expected to be realized in various application fields with the advent of cost-effective fabrication of cells and stacks in high volumes. Cost-reduction efforts have focused on production yield, power density, operation temperature, and continuous manufacturing. In this article, we examine several issues associated with processing for SOFCs from the standpoint of the bimodal packing model, considering the external constraints imposed by rigid substrates. Optimum compositions of composite cathode materials with high volume fractions of the second phase (particles dispersed in matrix) have been analyzed using the bimodal packing model. Constrained sintering of thin electrolyte layers is also discussed in terms of bimodal packing, with emphasis on the clustering of dispersed particles during anisotropic shrinkage. Finally, the structural transition of dispersed particle clusters during constrained sintering has been correlated with the structural stability of thin-film electrolyte layers deposited on porous solid substrates.

Direct Microwave Sintering of Poorly Coupled Ceramics in Electrochemical Devices

  • Amiri, Taghi;Etsell, Thomas H.;Sarkar, Partha
    • Journal of Electrochemical Science and Technology
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    • 제13권3호
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    • pp.390-397
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    • 2022
  • The use of microwaves as the energy source for synthesis and sintering of ceramics offers substantial advantages compared to conventional gas-fired and electric resistance furnaces. Benefits include much shorter processing times and reaching the sintering temperature more quickly, resulting in superior final product quality. Most oxide ceramics poorly interact with microwave irradiation at low temperatures; thus, a more complex setup including a susceptor is needed, which makes the whole process very complicated. This investigation pursued a new approach, which enabled us to use microwave irradiation directly in poorly coupled oxides. In many solid-state electrochemical devices, the support is either metal or can be reduced to metal. Metal powders in the support can act as an internal susceptor and heat the entire cell. Then sufficient interaction of microwave irradiation and ceramic material can occur as the sample temperature increases. This microwave heating and exothermic reaction of oxidation of the support can sinter the ceramic very efficiently without any external susceptor. In this study, yttria stabilized zirconia (YSZ) and a Ni-YSZ cermet support were used as an example. The cermet was used as the support, and a YSZ electrolyte was coated and sintered directly using microwave irradiation without the use of any susceptor. The results were compared to a similar cell prepared using a conventional electric furnace. The leakage test and full cell power measurement results revealed a fully leak-free electrolyte. Scanning electron microscopy and density measurements show that microwave sintered samples have lower open porosity in the electrode support than conventional heat treatment. This technique offers an efficient way to directly use microwave irradiation to sinter thin film ceramics without a susceptor.

Chalcogenide 기반 메모리 소자의 스위칭 특성 향상을 위한 광학패턴 형성

  • 박주현;한창조;강지수;이달현;남기현;정홍배
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.185-185
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    • 2010
  • Programmable Metallization Cell (PMC) Random Access Memory is based on the electrochemical growth and removal of electrical nanoscale pathways in thin films of solid electrolytes. In this study, we investigated the nature of thin films formed by the photo doping of copper ions into chalcogenide materials for use in programmable metallization cell devices. These devices rely on metal ions transport in the film so produced to create electrically programmable resistance states. The results imply that a Cu-rich phase separates owing to the reaction of Cu with free atoms from chalcogenide materials.

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Nanoscale Fabrication of Biomolecular Layer and Its Application to Biodevices

  • Park, Jeong-Woo;Nam, Yun-Suk;Masamichi Fujihira
    • Biotechnology and Bioprocess Engineering:BBE
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    • 제9권2호
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    • pp.76-85
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    • 2004
  • Biodevices composed of biomolecular layer have been developed in various fields such as medical diagnosis, pharmaceutical screening, electronic device, photonic device, environmental pollution detection device, and etc. The biomolecules such as protein, DNA and pigment, and cells have been used to construct the biodevices such as biomolecular diode, biostorage device, bioelectroluminescence device, protein chip, DNA chip, and cell chip. Substantial interest has focused upon thin film fabrication or the formation of biomaterials mono- or multi-layers on the solid surfaces to construct the biodevices. Based on the development of nanotechnology, nanoscale fabrication technology for biofilm has been emerged and applied to biodevices due to the various advantages such as high density immobilization and orientation control of immoblized biomolecules. This review described the nanoscale fabrication of biomolecular film and its application to bioelectronic devices and biochips.

Electrochemical Promotion of Pt Catalyst for The Oxidation of Carbon Monoxide

  • Shin, Seock-Jae;Kang, An-Soo
    • 대한안전경영과학회지
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    • 제2권4호
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    • pp.187-195
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    • 2000
  • Electrochemical promotion of the reaction rate was investigated for CO oxidation in a solid electrolyte catalytic reactor where a thin film of Pt was deposited on the yttria stabilized zirconia as an electrode as well as a catalyst. It was shown under open circuit condition that potential was a mixed potential of $O_2$exchange reaction and electrochemical reaction induced by CO. The effect of electrochemical modification on the CO oxidation rate was studied at various overpotentials and $P_{CO}$$P_{O2}$.

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Thin Film Battery Using Micro-Well Patterned Titanium Substrates Prepared by Wet Etching Method

  • Nam, Sang-Cheol;Park, Ho-Young;Lim, Young-Chang;Lee, Ki-Chang;Choi, Kyu-Gil;Park, Gi-Back
    • 전기화학회지
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    • 제11권2호
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    • pp.100-104
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    • 2008
  • Titanium sheet metal substrates used in thin film batteries were wet etched and their surface area was increased in order to increase the discharge capacity and power density of the batteries. To obtain a homogeneous etching pattern, we used a conventional photolithographic process. Homogeneous hemisphere-shaped wells with a diameter of approximately $40\;{\mu}m$ were formed on the surface of the Ti substrate using a photo-etching process with a $20\;{\mu}m{\times}20\;{\mu}m$ square patterned photo mask. All-solid-state thin film cells composed of a Li/Lithium phosphorous oxynitride (Lipon)/$LiCoO_2$ system were fabricated onto the wet etched substrate using a physical vapor deposition method and their performances were compared with those of the cells on a bare substrate. It was found that the discharge capacity of the cells fabricated on wet etched Ti substrate increased by ca. 25% compared to that of the cell fabricated on bare one. High discharge rate was also able to be obtained through the reduction in the internal resistance. However, the cells fabricated on the wet etched substrate exhibited a higher degradation rate with charge-discharge cycling due to the nonuniform step coverage of the thin films, while the cells on the bare substrate demonstrated a good cycling performance.

홀로그래픽 회절 패턴을 고체전해질에 적용하기 위한 비정질 Ge-Se 박막의 특성에 관한 연구 (The Study of Amorphous Ge-Se Thin Film for applying Holographic Diffraction Pattern to Solid Electrolyte)

  • 남기현;정홍배
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2008년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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    • pp.123-124
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    • 2008
  • In this study, we studied the nature of thin films formed by photodoping chalcogenide materials with for use in programmable metallization cell devices, a type of ReRAM. We investigated the resistance of Ag-doped chalcogenide thin films varied in the applied voltage bias direction from about $1M{\Omega}$ to several hundreds of ${\Omega}$. As a result of these resistance change effects, it was found that these effects agreed with PMC-RAM. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from the chalcogenide materials.

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Electrical Characterization of Ultrathin Film Electrolytes for Micro-SOFCs

  • Shin, Eui-Chol;Ahn, Pyung-An;Jo, Jung-Mo;Noh, Ho-Sung;Hwang, Jaeyeon;Lee, Jong-Ho;Son, Ji-Won;Lee, Jong-Sook
    • 한국세라믹학회지
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    • 제49권5호
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    • pp.404-411
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    • 2012
  • The reliability of solid oxide fuel cells (SOFCs) particularly depends on the high quality of solid oxide electrolytes. The application of thinner electrolytes and multi electrolyte layers requires a more reliable characterization method. Most of the investigations on thin film solid electrolytes have been made for the parallel transport along the interface, which is not however directly related to the fuel cell performance of those electrolytes. In this work an array of ion-blocking metallic Ti/Au microelectrodes with about a $160{\mu}m$ diameter was applied on top of an ultrathin ($1{\mu}m$) yttria-stabilized-zirconia/gadolinium-doped-ceria (YSZ/GDC) heterolayer solid electrolyte in a micro-SOFC prepared by PLD as well as an 8-${\mu}m$ thick YSZ layer by screen printing, to study the transport characteristics in the perpendicular direction relevant for fuel cell operation. While the capacitance variation in the electrode area supported the working principle of the measurement technique, other local variations could be related to the quality of the electrolyte layers and deposited electrode points. While the small electrode size and low temperature measurements increaseed the electrolyte resistances enough for the reliable estimation, the impedance spectra appeared to consist of only a large electrode polarization. Modulus representation distinguished two high frequency responses with resistance magnitude differing by orders of magnitude, which can be ascribed to the gadolinium-doped ceria buffer electrolyte layer with a 200 nm thickness and yttria-stabilized zirconia layer of about $1{\mu}m$. The major impedance response was attributed to the resistance due to electron hole conduction in GDC due to the ion-blocking top electrodes with activation energy of 0.7 eV. The respective conductivity values were obtained by model analysis using empirical Havriliak-Negami elements and by temperature adjustments with respect to the conductivity of the YSZ layers.

Investigation on solid-phase crystallization of amorphous silicon films

  • 김현호;지광선;배수현;이경동;김성탁;이헌민;강윤묵;이해석;김동환
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.279.1-279.1
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    • 2016
  • 박막 트랜지스터 (thin film transistor, TFT)는 고밀도, 대면적화로 높은 전자의 이동도가 요구되면서, 비정질 실리콘 (a-Si)에서 다결정 실리콘 (poly-Si) TFT 로 연구되었다. 이에 따라 비정질 실리콘에서 결정질 실리콘으로의 상변화에 대한 결정화 연구가 활발히 진행되었다. 또한, 박막 태양전지 분야에서도 유리기판 위에 비정질 층을 증착한 후에 열처리를 통해 상변화하는 고상 결정화 (solid-phase crystallization, SPC) 기술을 적용하여, CSG (thin-film crystalline silicon on glass) 태양전지를 보고하였다. 이러한 비정질 실리콘 층의 결정화 기술을 결정질 실리콘 태양전지 에미터 형성 공정에 적용하고자 한다. 이 때, 플라즈마화학증착 (Plasma-enhanced chemical vapor deposition, PECVD) 장비로 증착된 비정질 실리콘 층의 열처리를 통한 결정화 정도가 중요한 요소이다. 따라서, 비정질 실리콘 층의 결정화에 영향을 주는 인자에 대해 연구하였다. 비정질 실리콘 증착 조건(H2 가스 비율, 도펀트 유무), 실리콘 기판의 결정방향, 열처리 온도에 따른 결정화 정도를 엘립소미터(elipsometer), 투과전자현미경 (transmission electron microscope, TEM), 적외선 분광기 (Fourier Transform Infrared, FT-IR) 측정을 통하여 비교 하였다. 이를 기반으로 결정화 온도에 따른 비정질 실리콘의 결정화를 위한 활성화 에너지를 계산하였다. 비정질 실리콘 증착 조건 보다 기판의 결정방향이 결정화 정도에 크게 영향을 미치는 것으로 확인하였다.

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태양광과 물로부터 수소생산을 위한 광전기화학전지의 CdSe/$TiO_2$ 전극 (CdSe/$TiO_2$ electrode of photoelectrochemical[PEC] cell for hydrogen production from water using solar energy)

  • 이은호;정광덕;주오심
    • 한국수소및신에너지학회논문집
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    • 제16권2호
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    • pp.130-135
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    • 2005
  • Cadmium selenide is one of the group IIb-VI compounds, which is the promising semiconductor material due to its wide range of technological applications in optoelectronic devices such as photoelectrochemical cells, solid state solar cells, thin film photoconductors etc. CdSe has optical band gap of 1.7-1.8eV and proper conduction band edge for water splitting. CdSe films are coated with small thickness(20-50nm) nanocrystalline $TiO_2$ film by electrodeposition or chemical bath deposition methods and PEC properties of CdSe and CdSe/$TiO_2$ sandwich structure are studied. The photoactivity of CdSe and CdSe/$TiO_2$ films deposited on titanium substrate is studied in aqueous electrolyte of 1M NaOH solution. Photocurrent and photovoltage obtained were of the order of 2-4 mA/$cm^2$ and 0.5V, respectively, under the intensity of illumination of 100 mW/$cm^2$.