• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.766-772
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• 2011

Amorphous Si (a-Si) thin films of $p^+/p^-/n^+$ were deposited on $Si_3N_4$/glass substrate by using a plasma enhanced chemical vapor deposition (PECVD) method. These films were annealed at various temperatures and for various times by using a rapid thermal process (RTP) equipment. This step was added before the main thermal treatment to make the nuclei in the a-Si thin film for reducing the process time of the crystallization. The main heat treatment for the crystallization was performed at the same condition of $600^{\circ}C$/18 h in conventional furnace. The open-circuit voltages ($V_{oc}$) were remained about 450 mV up to the nucleation condition of 16min in the nucleation RTP temperature of $680^{\circ}C$. It meat that the process time for the crystallization step could be reduced by adding the nucleation step without decreasing the electrical property of the thin film Si for the solar cell application.

• Journal of the Korean Ceramic Society
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• v.38 no.1
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• pp.100-105
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• 2001

An all solid-state thin film battery (TFB) was fabricated by growing, undoped and Pt-doped vanadium oxide cathode film ( $V_2$ $O_{5}$ ) on I $n_2$ $O_3$: Sn coated glass, respectively. Room temperature charge-discharge measurements based on Li/Lipon/ $V_2$ $O_{5}$ full-cell structure with a constant current clearly shows that the Pt-doped $V_2$ $O_{5}$ cathode film is superior, in terms of cyclibility. X-ray diffraction (XRD) results indicate that the Pt doping process induces a more random amorphous structure than an undoped $V_2$ $O_{5}$ film. In addition to its modified structure, the Pt-doped $V_2$ $O_{5}$ film has a smoother surface than the undoped sample. Compared to an undoped $V_2$ $O_{5}$ film, the Pt doped $V_2$ $O_{5}$ cathode film has a higher electron conductivity. We hypothesize that the addition of Pt alters electrochemical performance in a manner of making more random amorphous structure and gives an excess electron by replacing the $V^{+5}$. Possible mechanisms are discussed for the observed Pt doping effect on structural and electrochemical properties of vanadium oxide cathode films, which are grown on I $n_2$ $O_3$: Sn coated glass.

• Journal of the Korean Ceramic Society
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• v.43 no.11 s.294
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• pp.746-750
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• 2006

NiO films and Ru co-sputtered NiO films were deposited by reactive magnetron sputtering for micro-solid oxide fuel cell anode applications. The deposited films were reduced to form porous films. The reduction kinetics of the Ru doped NiO film was more sluggish than that of the NiO film, and the resulting microstructure of the former exhibited finer pore networks. The possibility of using the films for the anodes of single chamber micro-SOFCs was investigated using an air/fuel mixed environment. It was found that the abrupt increase in the resistance is suppressed in the Ru co-sputtered film, as compared to undoped film.

• Transactions of the Korean hydrogen and new energy society
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• v.17 no.2
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• pp.204-211
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• 2006

The electrolyte in the solid oxide fuel cell must be dense enough to avoid gas leakage and thin enough to reduce the ohmic resistance. In order to manufacture the thin and dense electrolyte layer, 8 mol% $Y_2O_3$ stabilized-$ZrO_2$ (8YSZ) electrolyte layers were coated on the porous tubular substrate by the novel vacuum slurry dip-coating process. The effects of the slurry concentration, presintering temperature, and vacuum pressure on the thickness and the gas permeability of the coated electrolyte layers have been examined in the vacuum slurry coating process. The vacuum-coated electrolyte layers showed very low gas permeabilities and had thin thicknesses. The single cell with the vacuum-coated electrolyte layer indicated a good performance of $495\;mW/cm^2$, 0.7 V at $700^{\circ}C$. The experimental results show that the vacuum dip-coating process is an effective method to fabricate dense thin film on the porous tubular substrate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.12
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• pp.1022-1026
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• 2007

We have demonstrated new functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of silver via photo-induced diffusion in thin chalcogenide films is considered. The influence of silver on the properties of the newly formed materials is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Silver saturated chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in programmable metallization cell (PMC) devices. In this paper, we investigated electrical and optical properties of Ag-doped chalcogenide thin film on changed thickness of Ag and chalcogenide thin films, which is concerned at Ag-doping effect of PMC cell. As a result, when thickness of Ag and chalcogenide thin film was 30 nm and 50 nm respectively, device have excellent characteristics.

• Journal of the Korean Electrochemical Society
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• v.3 no.2
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• pp.115-120
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• 2000

All solid-state thin film micro-batteries consisting of lithium metal anode, an amorphous LiPON electrolyte and cathode of vanadium oxide have been fabricated and characterized, which were fabricated with cell structure of $Li/LiPON/V_2O_5Pt$. The effect of various oxygen partial pressure on the electrochemical properties of vanadium oxide thin films formed by d.c. reactive sputtering deposition were investigated. The vanadium oxide thin film with deposition condition of $20\%\;O_2/Ar$ ratio showed good cycling behavior. In in-siか process, the LiPON electrolyte was deposited on the $V_2O_5$ films without breaking vacuum by r.f. magnetron sputtering at room temperature. After deposition of the amorphous LiPON, the Li metal films were grown by a thermal evaporator in a dry room. The charge-discharge cycle measurements as a function of current density and voltage variation revealed that the $Li/LiPON/V_2O_5$ thin film had excellent rechargeable properly when current density was $7{\mu}A/cm^2$. and cut-off voltage was between 3.6 and 2.7V In practical experiment, a stopwatch ran on this $Li/LiPON/V_2O_5$ thin film micro-battery. This result means that thin film micro-battery fabricated by in-siか process is a promising for power source for electronic devices.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.05a
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• pp.783-784
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• 2012

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.20.2-20
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• 2003

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.84.1-84.1
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• 2011

Typical solid oxide fuel cells (SOFCs) have limited applications because they operate at high temperature due to low ionic conductivity of electrolyte. Thin film solid oxide fuel cell with yttria stabilized zirconia (YSZ) electrolyte is developed to decrease operating temperature. Pt/YSZ/Pt thin film SOFC was fabricated on anodic aluminum oxide (AAO). The crystalline structure of YSZ electrolyte by sputter is heavily depends on the roughness of porous Pt layer, which results in pinholes. To deposit YSZ electrolyte without pinholes and electrical shortage, it is necessary to deposit smoother and denser layer between Pt anode layer and YSZ layer by sputter. Atomic Layer Deposition (ALD) technique is used to deposit pre-YSZ layer, and it improved electrolyte quality. 300nm thick Bi-layered YSZ electrolyte was successfully deposited without electrical shortage.

• Journal of the Korean Ceramic Society
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• v.42 no.12 s.283
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• pp.827-832
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• 2005

In this study, thin electrolyte layer was prepared by 8YSZ ($8mol\%$ Yttria-Stabilized Zirconia) slurry dip and sol coating onto the porous anode support in order to reduce ohmic resistance. 8YSZ polymeric sol was prepared from inorganic salt of nitrate and XRF results of xerogel powder exhibited similar results $(99.2\pm1wt\%)$ compared with standard sample (TZ-8YS, Tosoh Co.). The dense and thin YSZ film with $1{\mu}m$ thickness was synthesized by coating of 0.7M YSZ sol followed by heat-treatment at $600^{\circ}C$ for 1 h. Thin film electrolyte sintered at $1400^{\circ}C$ showed no gas leakage at the differential pressure condition of 3 atm.