• Title/Summary/Keyword: Solar Cells

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Electrolytic Hydrogen Production Using Solution Processed CIGS thin Film Solar Cells (용액 공정 CIGS 박막 태양 전지를 이용한 물 분해 수소 생산)

  • Jeon, Hyo Sang;Park, Se Jin;Min, Byoung Koun
    • Transactions of the Korean hydrogen and new energy society
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    • v.24 no.4
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    • pp.282-287
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    • 2013
  • Hydrogen production from water using solar energy is attractive way to obtain clean energy resource. Among the various solar-to-hydrogen production techniques, a combination of a photovoltaic and an electrolytic cell is one of the most promising techniques in term of stability and efficiency. In this study, we show successful fabrication of precursor solution processed CIGS thin film solar cells which can generate high voltage. In addition, CIGS thin film solar cell modules producing over 2V of open circuit voltage were fabricated by connecting three single cells in series, which are applicable to water electrolysis. The operating current and voltage during water electrolysis was measured to be 4.23mA and 1.59V, respectively, and solar to hydrogen efficiency was estimated to be 3.9%.

A Study for reduction of the power loss of PV modules (PV moudule의 출력손실 저감요인 분석)

  • Lee, Sang-Hun;Kang, Gi-Hwan;Yu, Gwon-Jong;Ahn, Hyung-Keun;Han, Deuk-Young
    • 한국태양에너지학회:학술대회논문집
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    • 2011.11a
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    • pp.45-50
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    • 2011
  • The efficiency of solar cell was about 4[%] in initial stage of photovoltaic industry, but it has quite a lot of efficiency through technology advances. Today, the efficiency of c-Si solar cells is about 17 to 19[%] and the efficiency of PV modules is about 14 to 15 [%]. We called that electrical losses occurred in the Conversion of solar cells to PV modules are CTM loss(Cell To Module loss), the CTM loss typically has a value of about3~5[%]. The more efficiency of solar cell increase, differences are larger because the efficiency decrease owing to physical or technical problems occurred in the Conversion of solar cells to PV modules. In this study, the power loss factors occurred in the Conversion of solar cells to PV modules are analyzed and it is proposed that how to reduce losses of the PV module. The types of power loss factor are (1)losses of front glass and encapsulant(generally EVA sheet), (2)losses by sorting miss, (3)losses by interconnection, (4)losses by the field aging of PV modules. In further study, experimental and evaluation will be conducted to make demonstrate for proposed solutions.

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The Analysis of maximum output power of PV module by solar cell Interval (PV모듈에서 태양전지의 간격에 따른 전기적 출력 특성 분석)

  • Lee, Jin-Seob;Kang, Gi-Hwan;Park, Chi-Hong;Yu, Gwon-Jong;Ahn, Hyung-Gun;Han, Deuk-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.13-14
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    • 2008
  • In this paper, we analyze the electrical characteristics of PV depending on distance among solar cells before and after lamination process. From the result, the PV module's maximum power increases about 3.37% when solar cells's distance is 10mm. And the maximum power increases up to 8.42% when solar cells's maximum distance is 50mm. It is assumed that PV module's surface temperature decreases because of increasing distance between solar cells that would give high power generation. Also, short distance between solar cell and frame result in contamination on glass. When considering reduced maximum power caused by contaminant, from that, we can fabricated PV module of lower cost with high performance.

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Characterization of Chemical Bath Deposited ZnS Thin Films and Its application to $Cu(InGa)Se_2$ Solar Cells (용액성장법에 의한 황화아연 박막층 분석 및 이의 CIGS 태양전지로의 응용)

  • Shin, Dong-Hyeop;Larina, Liudmila;Yun, Jae-Ho;Ahn, Byung-Tae
    • 한국신재생에너지학회:학술대회논문집
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    • 2009.06a
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    • pp.138-138
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    • 2009
  • Recently, thin-film solar cells of Cu(In,Ga)$Se_2$(CIGS) have reached a high level of performance, which has resulted in a 19.9%-efficient device. These conventional devices were typically fabricated using chemical bath deposited CdS buffer layer between the CIGS absorber layer and ZnO window layer. However, the short wavelength response of CIGS solar cell is limited by narrow CdS band gap of about 2.42 eV. Taking into consideration the environmental aspect, the toxic Cd element should be replaced by a different material. It is why during last decades many efforts have been provided to achieve high efficiency Cd-free CIGS solar cells. In order to alternate CdS buffer layer, ZnS buffer layer is grown by using chemical bath deposition(CBD) technique. The thickness and chemical composition of ZnS buffer layer can be conveniently by varying the CBD processing parameters. The processing parameters were optimized to match band gap of ZnS films to the solar spectrum and exclude the creation of morphology defects. Optimized ZnS buffer layer showed higher optical transmittance than conventional thick-CdS buffer layer at the short wavelength below ~520 nm. Then, chemically deposited ZnS buffer layer was applied to CIGS solar cell as a alternative for the standard CdS/CIGS device configuration. This CIGS solar cells were characterized by current-voltage and quantum efficiency measurement.

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Advanced Silicon Solar Cell Structures for Space Applications

  • Lee, S.H.;Kim, D.S.
    • Solar Energy
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    • v.17 no.2
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    • pp.23-33
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    • 1997
  • This paper reviews the advanced solar cell structures used in space. These are the structures which incorporate the back surface field and reflectors with very shallow and lightly doped emitters. Their use in space has shown that the thinner cells are more resistive to radiation damage than the thicker ones. It has been found that the charged particles affect both the surface and bulk of the cells used in space. This causes degradation in the output power, which in effect, can be explained by the degrading diffusion length of the cells. The PERL cells showed higher BOL(beginning of life) efficiency and almost the same EOL(end of life) efficiency as structures with wrap-around contact configuration fabricated on 10 ${\Omega}cm$ resistivity substrates. This observation lead to a conclusion that, the space cells do not necessarily need to have very high BOL efficiency except in specific missions which require such.

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The research of anti-reflection coating using porous silicon for crystalline silicon solar cells (다공성 실리콘을 이용한 결정질 실리콘 태양전지 반사방지막에 관한 연구)

  • Lee, Jaedoo;Kim, Minjeong;Lee, Soohong
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.06a
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    • pp.90.2-90.2
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    • 2010
  • The crystalline silicon solar cells have been optical losses. but it can be reduced using light trapping by texture structure and anti-reflection coating. The high reflective index of crystalline silicon at solar wavelengths(400nm~1000nm) creates large reflection losses that must be compensated for by applying anti-reflection coating. In this study, the use of porous silicon(PSi) as an active material in a solar cell to take advantage of light trapping and blue-harvesting photoluminescence effect. Porous silicon is form by anodization and can be obtained in an electrolyte with hydrofluoric. We expect our research can results approaching to lower than 10% of several reflectance by porous silicon solar cells.

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Optimization of the tunnel Diode for GaAs/Ge Tandem Solar Cell (GaAs/Ge Tandem Solar Cell에 관한 터널 다이오드 최적화 연구)

  • Yang, S.M.;O, B.G.;Lee, M.G.;Cha, In-Su
    • Solar Energy
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    • v.18 no.1
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    • pp.35-43
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    • 1998
  • In two terminals monolithic tandem solar cells, tunnel diode is an important variable to improve conversion efficiency depending on current matching between the top and the bottom cells. Especially, the GaAs/Ge tandem is one of the most interesting cells for its high potential efficiency. This paper shows that physical analysis about I-V specific character of the GaAs/Ge solar cell, which is grown by MOCVD for GaAs or CVD for Ge, using computer simulation and experimental results, varying with thickness of the tunnel diode layer and concentration.

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High-Efficiency ITO/Se Solar Cells (Se 태양전지(太陽電池)의 고효율화(高效率化)에 관한 연구(硏究))

  • Kim, Tae-Seoung
    • Solar Energy
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    • v.7 no.2
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    • pp.7-13
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    • 1987
  • Indium-Tin-Oxide (ITO)/Selenium heterojunction solar cells which fabricated by vacuum deposition technique and annealing process has been investigated. Prior to the Selenium deposition, a thin tellurium layer (about $10{\AA}$) was deposited onto the ITO layers to provide a sufficient mechanical bond between the Oxide and Selenium layers. The amorphous Selenium layer was deposited onto the Te-ITO layers, and then the crystallization of the amorphous Selenium was carried out using a hot plate at about $180^{\circ}C$ for 4 min. Efficient Selenium solar cells with conversion efficiency as high as 4.52% under AM1 condition has been fabricated in polycrystalline Selenium layer ($6{\mu}m$). The optimum data in manufacturing Se solar cell was listed in table.

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Improved Understanding of LeTID of Single-crystalline Silicon Solar Cell with PERC

  • Kim, Kwanghun;Baik, Sungsun;Park, Jaechang;Nam, Wooseok;Jung, Jae Hak
    • Current Photovoltaic Research
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    • v.6 no.4
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    • pp.94-101
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    • 2018
  • Light elevated temperature induced degradation (LeTID) was noted as an issue in multi-crystalline silicon solar cells (MSSC) by Ram speck in 2012. In contrast to light induced degradation (LID), which has been researched in silicon solar cells for a long time, research about both LeTID and the mechanism of LeTID has been limited. In addition, research about LeTID in single-crystalline silicon solar cells (SSSC) is even more limited. In order to improve understanding of LeTID in SSSC with a passivated emitter rear contact (PERC) structure, we fabricated four group samples with boron and oxygen factors and evaluated the solar cell characteristics, such as the cell efficiency, $V_{oc}$, $I_{sc}$, fill factor (FF), LID, and LeTID. The trends of LID of the four group samples were similar to the trend of LeTID as a function of boron and oxygen.