• 한국전기전자재료학회논문지
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• 제19권7호
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• pp.667-672
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• 2006

Ferroelectric $Pb(Zr_{0.52}Ti_{0.48})O_3$ (PZT(52/48)) thick films were fabricated by the screen-Printing method on the alumina substrates, and $PbTiO_3$ (PT) Precursor solution, which prepared by sol-gel method, was spin-coated on the PZT(52/48) thick films to obtain a densification. Its structural and electrical properties of the PZT(52/48) thick films with the treatment of PT precursor solution coating were investigated. The particle size of the thick films was increased with increasing the number of coatings and the thickness of the PZT-6 (6: number of coatings) films was about $60{\mu}m$. The relative dielectric constant increased and the dielectric loss decreased with increasing the number of PT sol coatings. The relative dielectric constant and dielectric loss of the PZT-6 thick film were 475 and 2 %, respectively. The remanent polarization, coercive field and breakdown strength of the PZT-6 film were $32.6{\mu}C/cm^2$, 15 kV/cm and 60 kV/cm, respectively.

• 전기학회논문지P
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• 제51권2호
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• pp.77-81
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• 2002

In this study, PZT thin films were fabricated using sol-gel processing onto Si/$SiO_2$/Ti/Pt substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C$, $650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.

• 전기화학회지
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• 제3권1호
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• pp.11-14
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• 2000

가시광선 영역에서의 높은 투과성과 우수한 전도성을 가진 전도성 ITO박막은 그 전기적 광학적 특성에 의해서 태양 전기 기판의 전극 재료나 Display소자의 투명전극으로 개발되고 있다. 이들의 제작은 현재 sputtering이 주종을 이루나 이들의 높은 생산비를 절감할 목적으로 sol-ge떫을 이용하여 ITO박막을 만들었다. ITO제조용 sol은 유기질 sol로는 indium tri-iso-propoxide를 ethylene glycol monoethyl ether에 녹인 후 $SnCl_4$를 dopant로 사용하여 제조하였다. Acetyl acetone을 넣어 sol이 수화되는 현상을 억제하였다. 무기질 sol로는 indium acetate를 n-propanol에 용해하여 사용하였다. Spin 방법을 이용하여 코팅하였으며 $500^{\circ}C$에서 열처리하였다. 가시 광선 영역에서의 투과도는 $90\%$ 이상을 얻었으며 비저항은 $0.01\Omega{\cdot}cm$가 측정되었다.

• 대한금속재료학회지
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• 제48권9호
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• pp.831-841
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• 2010

Indium tin oxide (ITO) nanopowders were synthesized by coprecipitation and the sol-gel method to prepare a stable dispersion of ITO nano-colloid for antistatic coating of a display panel. The colloidal dispersions were prepared by attrition process with a vibratory milling apparatus using a suitable dispersant in organic solvent. The ITO coating solution was spin-coated on a glass panel followed by the deposition of partially hydrolyzed alkyl silicate as an over-coat layer. The double-layered coating films were characterized by measuring the sheet resistance and reflectance spectrum for antistatic and antireflective properties.

• 한국응용과학기술학회지
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• 제40권5호
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• pp.1116-1125
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• 2023

산화아연 막은 투명한 전도성 물질로써 다양한 분야의 광전자소자에 이용되고 있다. 그러므로 산화아연 막의 특성을 규명하는 것은 광전자소자의 성능을 높이는데 매우 중요한 역할을 할 것이다. 본 논문에서는 이러한 산화아연 막을 용액공정 기반으로 제작하여 형태적, 구조적 특성을 평가하고자 한다. 구체적으로는 졸-겔 방법을 반복적으로 시행하여, 시행 횟수에 따른 산화아연 막의 물성의 변화를 관찰할 것이다. 일정한 용액 조건하에서, 5회의 반복적인 졸-겔 방법을 시행한 결과 결정화가 진행되는 것을 확인하였다. 7회 이상에서는 원소 구성 및 결정화도가 특정 값에 수렴하는 경향을 보였다. 최종적인 산화아연 막의 평균결정의 크기는 약 10.7 nm 정도로 계산되었다. 본 연구를 통해 최적의 결정화를 보이는 공정횟수는 7회였다. 본 연구 결과 및 방법론은 다양한 용액공정 변수를 가변시키면서 적용할 수가 있고 최적의 공정조건을 확립하는데 기여할 것으로 기대한다.

• 센서학회지
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• 제19권3호
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• pp.202-208
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• 2010

This study examined the dependency of crystalline orientation and electric properties of sol-gel PZT film on hydrolysis, a $PbTiO_3$ seed layer and a concentration of sol-gel solution. The PZT thin films were prepared by using 2-Methoxyethanol-based sol-gel method and spin-coating on Pt/Ti/$SiO_2$/Si substrates. The 1-${\mu}m$-thick PZT films were coated and then fired in a furnace by direct insert method. The highly (111) oriented PZT film of pure perovskite structure could be obtained. We could control the degree of orientation by various parameters such as hydrolysis, a $PbTiO_3$ seed layer and a concentration of sol-gel solution. The highest measured remanent polarization, dielectric constant and piezoelectric coefficient are $24.16\;{\mu}C/cm^2$, 2808, and 159 pC/N, respectively.

• 한국세라믹학회지
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• 제35권1호
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• pp.11-16
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• 1998

$VO_2$ thin films have been prepared on borosilicate glass substrate using alkoxide method to characterize the effects of fabricating factors on thermochromic performance. The gel films formed by spin coating were converted to $V_2O_5$ phase during oxidizing heat-tratment and the $VO_2$ phase were formed by reducing heat-treatement. The thermochromic switching properties of $VO_2$ thin films are strongly affected by the crystal phase and microstructure and those could be controlled by reducing heat-treatment conditions. The ther-mochromic switching characteristics of $VO_2$ thin films synthesized were measured at IR (2.5$\mu\textrm{m}$) as the transition temperature of $63^{\circ}C$ the transition width of $3.6^{\circ}C$and the maximum and minimum transmittance of 84% and 14% respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.665-668
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• 1999

Thin films of Pb(Zr,Ti)O$_3$ were fabricated by means of the sol-gel spin-coating method and the multi-coating of eight coating numbers. The thin films were dried on the temperature range of 250 ~ 400($^{\circ}C$), whenever the specimens were dried after each coating Processing. The fabricated ferroelectric thin films of lead zirconate titanate(PZT) were treated with the rapid thermal annealing(RTA) at 650($^{\circ}C$),or 3(min), and direct insertion thermal annealing(DITA) at 650($^{\circ}C$), for 30(min). The measured properties of dielectric thin films were following: The good results of dielectric properties were shown by the RTA specimen. The saturation polarization(Ps), remanent polarization(Pr), coercive field (Ec), dielectric constant and dielectric loss factor of the RTA specimen were estimated to be about 27.1[ $\mu$ C/$\textrm{cm}^2$], 13.7[ $\mu$ C/$\textrm{cm}^2$], 55.6(kV/cm), 786 and 6.4(%) respectively.

• 한국결정성장학회지
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• 제18권2호
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• pp.72-75
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• 2008

Zinc oxide (ZnO) thin films were prepared by a sol-gel method. The structural and electrical properties were investigated by varying drying and annealing temperatures. The thin films were coated (250 nm) by spin-coating method on glass substrates. The optimum drying temperature of ZnO thin films was 300$^{\circ}C$ where the resistivity was the lowest and the preferred c-axis orientation was the highest. The annealing was carried out in air and inert atmospheric conditions. The degree of the preferred c-axis orientation was estimated. The highest preferred c-axis orientation was recorded at 600$^{\circ}C$. The preferred c-axis orientation and grain growth resulted in the mobility enhancement of the ZnO thin films, and the lowest resistivity was 0.62${\Omega}{\cdot}cm$ at 600$^{\circ}C$.

• 한국세라믹학회지
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• 제39권8호
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• pp.750-757
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• 2002

Photosensitive sol solution을 이용한 self pattern된 박막은 photoresist/dry etching process에 비해 박막의 제조과정이 간단하다는 장점을 가지고 있다. 이 연구에서는 photosensitive sol solution을 이용하여 spin coating법에 의해 $Sr_{0.9}Bi_{2.1}Ta_2O_9$의 조성을 갖는 강유전체 박막을 제조하였으며 출발원료는 $Sr(OC_2H_5)_2,\;Bi(TMHD)_3$와 $Ta(OC_2H_5)_5$를 사용하였다. SBT 박막에 UV 노광시간을 증가시킴에 따라 M-O-M 결합이 생성되면서 metal ${\beta}$-diketonate의 UV 흡수 피크 강도는 감소되었고 SBT 박막에 UV 조사에 따른 용해도 차이가 생기면서 fine patterning을 얻을 수 있었다. 또한 UV가 조사된 SBT 박막의 강유전 특성이 UV가 조사되지 않은 것보다 우수하였다.