• Korean Chemical Engineering Research
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• 제56권3호
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• pp.327-334
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• 2018

출발물질로서 테트라에톡시실란(TEOS)과 메틸트리메톡시실란(MTMS)을 사용하여 졸-겔법에 의해 발수성 코팅용액을 제조하였다. 이 용액을 냉연강판 위에 스핀 코팅하고 열처리하여 비불소계 발수 코팅 도막을 제조 하였다. 이 과정 중 MTMS/TEOS의 몰 비, 물 농도 및 암모니아 농도가 코팅 도막의 발수성에 미치는 영향을 연구하였다. MTMS/TEOS의 몰 비를 1~20으로 변화시켜 제조 한 코팅 도막의 접촉각은 MTMS/TEOS 몰 비가 10 일 때 최대 수치인 $108^{\circ}$를 나타내었다. 반면에 물의 첨가량을 증가시킴에 따라 코팅 도막의 접촉각이 증가하여 발수성이 향상되었다. 또한 암모니아의 첨가량이 커질수록실리카입자의 크기가커져 실리카입자의표면 거칠기가증가하므로 발수성이 증가하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.175-179
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• 1996

Ferroelectric SrBi$_2$Ta$_2$$O_{9}$ thin films were fabricated by tole Sol-Gel method using a spin-on coating with MOD(Metal Organic Dccomposition) solution on Pt/Ti/SiO$_2$/Si(100) substratcs. The films were anncalcd at 80$0^{\circ}C$ for one hour in oxygen atmosphere. The effects of Bi/Ti mole ratios on crystalline orientations, surface morphologies, and subface composition SBT thin films with a Bi/Ta mole ratios from 1.1 to 1.3 were investigated using X-ray Diffractometry (XRD). Atomic Force (AFM), X-Ray Photoelectron Spectroscopy(XPS). Ferroelectric properties of these films were also measured.d.

• 한국표면공학회지
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• 제32권3호
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• pp.456-460
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• 1999

Transparent conducting tin (IV) oxide thin films have been studies and developed for the electrode materials of solar cell substrate. Fabrication of tin oxide thin films by sol-gel method is process development of lower cost photovoltaic solar cell system. The research is focused on the establishment of process condition and development of precursor. The precursor solution was made of tin isopropoxide dissolved in isopropyl alcohol. The hydrolysis rate was controlled by addition of triethanolamine. Dip and spin coating technique were applied to coat tin oxide on borosilicate glass. The resistivity of the thin film was lower than 0.1Ω-cm and the transmittance is higher than 90% in a visible range.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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• pp.14-16
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• 1995

Pb($Zr_{0.52}Ti_{0.48}$)$O_3$ ceramic thin films were fabricated from an alkoxide-based solution by Sol-Gel method. Pb($Zr_{0.52}Ti_{0.48}$)$O_3$ co-ramic thin films were formed by spin coating method on Pt/$SiO_2$/Si substrate at 4000[rpm] for 30 [sec]. Coated specimens were dried on the hot-plate at 400[$^{\circ}C$] for 10[min]. The coating process was repeated 6 times and then sintered at temperature between 500 ~ 800[$^{\circ}C$] for 1 hour. The ferroelectric perovskite phases precipitated under the sintering of 700[$^{\circ}C$] for 1 hour. Pb($Zr_{0.52}Ti_{0.48}$)$O_3$ thin film sintered at 700[$^{\circ}C$] for 1hour showed good dielectric constant (2133) and dielectric loss (2.2[%]) Properties. The switching voltage, switching time and leakage currents density were 3.0[V], 1.7[${\mu}$sec] , 160[pA/$\textrm{cm}^2$] repectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 추계학술대회 논문집
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• pp.168-170
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• 1994

Pb($Zr_{0.52}$$Ti_{0.48}$)$O_3$ ceramic thin films were fabricated from an alkoxide-based solution by Sol-Gel method. Pb($Zr_{0.52}$$Ti_{0.48}$)$O_3$ ceramic thin films were formed by spin coating method on Pt/$SiO_2$Si substrate at 4000ppm for 30 seconds. The coating process was repeated 6 times and then heat-treated at temperature between 500∼800[$^{\circ}C$] for 1 hour. The final thickness of the thin films were about 4800[A]. The ferroelectric perovskite phases precipitated under the heat-treated at 700[$^{\circ}C$] for 1 hour. Pb($Zr_{0.52}$$Ti_{0.48}$)$O_3$ thin films heat-treated at 700[$^{\circ}C$] for 1 hour showed good dielectric and ferroclectric properties.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1454-1456
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• 1994

$Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramic thin films were fabricated from an alkoxide-based solution by Sol-Gel method. $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramic thin films were formed by spin coating method on $Pt/SiO_2/Si$ substrate at 3000rpm for 30 seconds. The coating process was repeated 6 times and then heat-treated at temperature between 500 - $800[^{\circ}C]$ for 1 hour. The final thickness of the thin films were about 4800[A]. The 100% ferroelectric perovskite phases precipitated under the heat treated at $700[^{\circ}C]$ for 1 hour. $Pb(Zr_{0.52}Ti_{0.48})O_3$ thin films heat-treated at $700[^{\circ}C]$ for 1 hour showed good dielectric constant (812) property.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.247-250
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• 1998

Ferroelectric PZT(10/90)PZT(90/10) heterolayered thin films were fabricated by spin-coating method on the Pt/Ti/SiO$^2$/Si substrate alternately using PZT(10/90) and PZT(90/10) metal alkoxide solutions. The coating and heating procedure was repeated six times to form PZT heterolayered films. The surface, cross-sectional microstructures and thickness of the films were observed using scanning electron microscope(SEM). The relative dielectric constant and dielectric loss of the 5-coated PZT heterolayered films were 1331 and 4.8% respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1342_1342
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• 2009

Zinc tin oxide (ZTO) based thin-film transistors (TFTs) were fabricated on glass substrate by using sol-gel method. The fabricated ZTO TFT had bottom gate and top contact structure with ZTO layer formed by spin coating from ZTO solution. The fabricated TFT showed field-effect mobility of about 2 - $4\;cm^2/V{\cdot}s$ with on/off current ratios >$10^7$, and threshold voltage of 2 V.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.305-306
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• 2006

Ga-doped and Al-doped ZnO thin films were fabricated via a sol-gel technique and electrical and optical properties of the films were investigated. Film deposition was performed by spin coating at 4000 rpm for 30 s on $SiO_2$ glass substrate FE-SEM was used to obtain the surface morphology images and the film thickness Four-point probe and UV-VIS spectrophotometer were used to measure the sheet resistance and the optical transparency, respectively.

• 한국전기전자재료학회논문지
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• 제11권1호
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• pp.57-61
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• 1998

In this study, PLZT stock solutions were prepared by Sol-Gel processing after the compositions were selected in the memory region of PLZT bulk phase diagram. PLZT solutions were deposited on the ITO glass substrate by spin-coating method. The thin films were annealed by rapid thermal processing. The electric characteristics, hysteresis loop, C-V characteristics of thin films in the memory region were measured in order to investigate the electrical characteristics of PLZT thin films. In selected compositions the decrease in Zr/Ti ratio led to an increase in dielectric constant and the decrease in remanent polarization and coercieve field which brought about slim hysteresis loop.