• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.83-86
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• 1998

Ferroelectric PZT(40/67)/PZT(60/40)heterolayered thin films were Prepared by the alkoxide-based Sol-Gel method. PZT(40/60) and PZT(60/40) stock solutions were made and spin-coated on the P7Ti/Si02/Si substrate alternately. These PZT(40/60) and PZT(60/40) films were dried at 300$^{\circ}C$ for 30min to remove organic materials and were sintered at 650$^{\circ}C$ for 1 hour to crystalize into a perovskite structure. The coating and heating procedure were repeated 6 times to form heterolayered films. Increasing the number of coating, coercive field was decreased. The relative dielectric constant, loss, remanent polarization and coercive field of the 4-coated PZT heterolayered were 1200, 4.1[%], 30.794[${\mu}$C/㎡] and 147.22[kV/cm], respectively.

• Bulletin of the Korean Chemical Society
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• 제34권4호
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• pp.1188-1194
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• 2013

Transparent $TiO_2$ thin films have been prepared by sol-gel spin coating method. The sols used for deposition of thin films were prepared with different ethanol content. The effect of ethanol (solvent) concentration and annealing temperature on the performance of $TiO_2$ thin film solar cells has been studied. The results indicate that the as deposited films are amorphous in nature. $TiO_2$ thin films annealed at temperatures above $350^{\circ}C$ exhibited crystalline nature with anatase phase. The results also indicated that the crystallinity of the films improved with increase of annealing temperature. The high resolution transmission electron microscope images showed lattice fringes corresponding to the anatase phase of $TiO_2$. The band gap of the deposited films has been found to decrease with increase in annealing temperature and increase with increase in ethanol concentration. The dependents of photovoltaic efficiency of the dye-sensitized $TiO_2$ thin film solar cells (DSSCs) with the amount of ethanol used to prepare thin films was determined from photocurrent-voltage curves.

• 한국전기전자재료학회논문지
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• 제21권6호
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• pp.552-555
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• 2008

The purpose of this study was to find a best condition of fabricating lead zirconate thin film by sol-gel method, especially to find mol ratio and post annealing temperature. Lead zirconate thin film was made by spin coating method. The ratios of Pb and Zr of precursors were 1:0.8, 1:1.0, and 1:1.2. Annealing temperature of films were $600^{\circ}C$, $700^{\circ}C$, and $800^{\circ}C$ for 1 minute. Crystal structure was observed from XRD and antiferroelectricity was observed from hysteresis curves. The optimum mol ratio of Pb:Zr is 1:0.8 and annealing temperature is $800^{\circ}C$.

• 한국전기전자재료학회논문지
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• 제15권6호
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• pp.504-510
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• 2002

Recently, thin film capacitors of high dielectric constant and low leakage current are applied to integrated devices. In this study, (Ba, Sr)$TiO_3$ (BST) thin films for low cost were prepared by Sol-Gel method. BST solution was spin-coated on Pt/$SiO_2$/Si substrate at 4,000 rpm for 10 seconds. Coating process was repeated 3 times and then sintered at $700^{\circ}C$ for 30 minutes. Structural and electrical characteristics of each specimen were analyzed by TG-DTA, SEM, fractal phenomenon, voltage-current and dielectric factor. Thickness of BST ceramics thin films are about 2,600~2,800 ${\AA}$ at depositing 3 times. Dielectric constant of thin films was decreased in 1 kHz~1 MHz. Dielectric constant and loss to frequency were 250 and 0.02 in $(Ba_{0.7}Sr_{0.3})TiO_3$ (BST3). Leakage current of BST3 was $10^{-9}\sim10^{-11}$/ A under 3 V.

• 한국전기전자재료학회논문지
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• 제11권3호
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• pp.237-241
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• 1998

In this study, PLZT stock solutions around x/65/35 (x=6~11) ferroelectric region were prepared by Sol-Gel method and deposited on ITO-glass by spin-coating method. The thin films were annealed by RTA(rapid thermal annealing). The variations of crystallographic structure of the thin films were observed using XRD and hysteresis curves, dielectric characteristics, and optical transmittances were measured in order to investigate the characteristics of the thin films. The thin films were crystallized at $750^{\circ}C$ for 5 min by RTA. Relative dielectric constant and optical transmittance increased with increasing La content, Ec and Pr were higher for thin films than for bulk materials.

• 한국결정성장학회지
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• 제11권6호
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• pp.252-258
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• 2001

($Ba_{0.7}Sr_{0.3})TiO_3$박막을 ITO-coated glass 기판위에 spin-coating법으로 제조하였다. 제조된 용액을 초음파 bath 내에서 초음파 처리하여 균일화를 촉진시킨 후 박막을 제조하여 초음파 처리하지 않은 용액으로 제조한 박막과의 비교를 통하여 초음파 효과를 알아보았다. 용액의 초음파 처리로 박막의 결정화 온도를 다소 낮추었으며 박막의 표면이 보다 균일하고 치밀화되었고 거칠기도 8.4nm에서 5.6nm로 더 낮아졌다. 그리고 박막의 투광성 및 전기적 특성 또한 용액의 초음파 처리로 인하여 향상되었다.

• 한국세라믹학회지
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• 제40권2호
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• pp.153-158
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• 2003

Photosensitive sol solution을 이용한 self pattern된 박막은 photoresist/dry etching process에 비해 박막의 제조과정이 간단하다는 장점을 가지고 있다. 이 연구에서는 강유전성 메모리소자의 산화물 전극재료로 사용되고 있는 La$_{0.5}$Sr$_{0.5}$CoO$_3$(LSCO)극 photosensitive sol solution을 이용하여 spin coating법으로 제조하였으며 출발원료는 La-2methoxyethoxide, Sr-ethoxide, Co-2methoxyethoxide를 사용하였다. LSCO gel 박막에 UV 노광시간을 증가시킴에 따라 M(metal)-O-M 결합이 생성되면서 metal $\beta$-diketonate의 UV 흡수 피크 강도는 감소되었고 LSCO gel 박막에 UV조사에 따른 용해도 차이가 생기면서 fine patterning 을 얻을 수 있었다. 68$0^{\circ}C$ 이상의 온도로 대기 중에서 열처리된 LSCO 박막은 perovskite 상을 나타내었고 74$0^{\circ}C$에서 가장 낮은 비저항값(4$\times$10￣$^3$Ωcm)을 얻을 수 있었다.

• 한국세라믹학회지
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• 제40권2호
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• pp.184-190
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• 2003

광감응성 sol-gel 용액을 사용하여 spin coating법으로 $IrO_2$전극 위에 $Sr_{0.9}$$Bi_{2.1}$$Ta_2$$O_{9}$ 박막을 성막하였다. UV 노광이 SBT 박막에 어떤 영향을 미치는지 알아보기 위해 UV 노광을 한 시편과 하지 않은 시편을 XRD 및 SEM로 분석한 결과 UV 노광이 SBT 결정성장을 촉진함을 확인할 수 있었다. UV 노광을 하고 $740^{\circ}C$ 산소분위기에서 1시간 로열처리 한 SBT 박막의 경우 2Pr 값은 5V 인가전압하에서 11.48$\mu$C/$ extrm{cm}^2$, Pr/Ps 값은 0.53이었고 660-$740^{\circ}C$에서 UV 노광을 하지 않은 시편에 비해 UV 노광을 한 시편들에서 약 12% 높은 2Pr 값을 얻었다.

• Korean Chemical Engineering Research
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• 제45권4호
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• pp.335-339
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• 2007

투명 polycarbonate(PC) 시트의 낮은 표면강도 문제를 극복하기 위해, 고굴절률을 보이는 유-무기 혼성 하드코팅 용액을 Sol-Gel 법을 이용하여 제조하였다. 코팅용액은 무기물 티타니아의 전구체인 TTIP(titanium tetraisopropoxide)에 유기물을 함유한 화합물인 GPTMS[(3-glycidoxypropyl) trimethoxysilane]를 첨가하여 제조하였다. 그 후 기재인 PC 시트에 스핀 코팅시키고, 열 경화 시켜 고굴절률을 보이는 하드코팅 필름을 제조 하였다. 코팅 용액 중의 GPTMS 함유량을 변화시킴에 의해 1.53-1.61의 굴절률을 갖는 코팅 막의 제조가 가능하였다. GPTMS의 첨가량이 증가할수록 코팅막의 굴절률은 감소하였으나, 연필경도는 증가하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.582-585
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• 2004

Pb0.5Sr0.5TiO3 (PST) thin films were fabricated by the alkoxide-based sol-gel process using spin-coating method on Pt/Ti/SiO2/Si substrate. The PST films annealed from 500C to 650C for 1h show a perovskite phase and dense microstructure with a smooth surface. The grain size and dielectric constant of PST films increases with the increase in annealing temperature, which reduces the SiO2 equivalent thickness of the PST film. The crystallinity or internal strain in the PST thin films analyzed from the diffraction-peak widths correlate well with the decrease in the dielectric losses. The dielectric constants and dielectric loss (%) of the PST films annealed at 650c (teq : 0.89 nm) were 549 and 0.21%, respectively.