• 제목/요약/키워드: Sol-gel solution

검색결과 507건 처리시간 0.034초

폴리이미드/$\textrm{TiO}_2$ 나노 복합재의 합성 및 특성에 관한 연구 (A study on the synthesis and characterization of PI/$\textrm{TiO}_2$ nano-composite)

  • 이중희;이봉신;허석봉
    • 한국복합재료학회:학술대회논문집
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    • 한국복합재료학회 2001년도 추계학술발표대회 논문집
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    • pp.137-140
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    • 2001
  • Oragnic/inorganic hybrid materials prepared by sol-gel method have rapidly become a fasci nating research field in materials science. In this study, Polyimide/$\textrm{TiO}_2$ composites were synthesized from nano-sized anatase $\textrm{TiO}_2$ and two types of Polyimide (BTDA-PPD, PMDA-ODA) by Sol-gel method. Nano-sized $\textrm{TiO}_2$ particles were prepared from $\textrm{TiOEt}_4$ solution. The composites were charcaterized by using XRD, TGA, IR, TEM, and Atomic Force Microscope(AFM). $\textrm{TiO}_2$ nano particles were dispersed well in polyimide matrix and the thermal stability of polyimide was improved with $\textrm{TiO}_2$ nano-sized particles.

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Sol-gel 공정으로 제작된 산화물 반도체 박막 트랜지스터 (Sol-gel processed oxide semiconductor thin-film transistors for active-matrix displays)

  • 김영훈;박성규;오민석;한정인
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2009년도 제40회 하계학술대회
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    • pp.1342_1342
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    • 2009
  • Zinc tin oxide (ZTO) based thin-film transistors (TFTs) were fabricated on glass substrate by using sol-gel method. The fabricated ZTO TFT had bottom gate and top contact structure with ZTO layer formed by spin coating from ZTO solution. The fabricated TFT showed field-effect mobility of about 2 - $4\;cm^2/V{\cdot}s$ with on/off current ratios >$10^7$, and threshold voltage of 2 V.

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Preparation of Phase Pure Cuprate Superconductors via The Modification of Sol-Gel Method

  • Ahn, Beom-Shu
    • 한국응용과학기술학회지
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    • 제17권2호
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    • pp.144-148
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    • 2000
  • A modification of the sol-gel method to obtain phase pure superconducting oxides is described. The method starts from organic salts of yttrium, barium and copper, such as acetates, and avoids the sudden and uncontrollable decomposition of the organic fraction which occurs if nitrates are used as starting materials. The aqueous solution obtained with citric acid in an alkaline medium is concentrated under vacuum. The solid so prepared is decomposed at about $300^{\circ}C$ thus giving an oxide precursor containing well dispersed yttrium, barium and copper. Pyrolysis at 850 - $920^{\circ}C$ followed by oxygen annealing gives the superconducting orthorhombic 123 phase. The results of TGA/DTA of the precursor, as well as XRD, electrical and magnetic property measurements on the pyrolysis products are presented and discussed.

졸-겔 법에 의한 구형 미분체 Barium Titanate의 제조 (Synthesis of Barium Titanate Spherical Particles by Sol-Gel Method)

  • 김용렬
    • 한국응용과학기술학회지
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    • 제24권3호
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    • pp.246-252
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    • 2007
  • $BaTiO_3$ powders were prepared by sol-gel method from different concentration of KOH aqueous solution and Ba/Ti molar ratio. Particle shape, size and crystal structure of prepared $BaTiO_3$ powders were analyzed by SEM, XRD, and FT-IR. As the result of KOH concentration changing, spherical particles were obtained by condition more than 3 M and particle size decreased as concentration increasing. Different appearance showed between dried and sintered powders against changing of Ba/Ti molar ratio. In case of dried powders, the crystallinity decreased as molar ratio increasing. On the other hand, increased as molar ratio increasing in case of sintered powders.

졸겔법으로 제작된 BST 박막의 구조적 특성 (A Study on Surface of BST Thin Films by Sol-Gel Methods)

  • 홍경진;민용기;조재철
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.377-380
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    • 2001
  • The BST thin films to composite (Ba$\sub$x/Sr$\sub$l-x/)TiO$_3$ using sol-gel method were fabricated on Pt/Ti/SiO$_2$/Si substrate. The thin film capacitor to be ferroelectric materials was investigated by structural and electrical properties. BST solution was composited by moi ratio, and then spin-coated (from 3 times to 5 times coating on Pt/SiO$_2$/Si substrate. Thickness of BST ceramics thin films are about 2600∼2800[${\AA}$] in 3 times deposition. The property of leakage current was stable when the applied voltage was 3[V]. Leakage current of 3 times coated BST thin film was 10$\^$-9/∼10$\^$-11/[A] at 0∼3[V].

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Sol-Gel법에의해 제작한 SrBi$_2$$Ta_2O_9$ 장유전체 박막의 특성 (Characterization of ferroelectric SrBi$_2$$Ta_2O_9$/ thin films prepared by Sol-Gel method)

  • 추정우;김영록;김영관;손병청;이전국
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1996년도 추계학술대회 논문집
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    • pp.175-179
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    • 1996
  • Ferroelectric SrBi$_2$Ta$_2$$O_{9}$ thin films were fabricated by tole Sol-Gel method using a spin-on coating with MOD(Metal Organic Dccomposition) solution on Pt/Ti/SiO$_2$/Si(100) substratcs. The films were anncalcd at 80$0^{\circ}C$ for one hour in oxygen atmosphere. The effects of Bi/Ti mole ratios on crystalline orientations, surface morphologies, and subface composition SBT thin films with a Bi/Ta mole ratios from 1.1 to 1.3 were investigated using X-ray Diffractometry (XRD). Atomic Force (AFM), X-Ray Photoelectron Spectroscopy(XPS). Ferroelectric properties of these films were also measured.d.

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Sol-Gel Processed InGaZnO Oxide Semiconductor Thin-Film Transistors for Printed Active-Matrix Displays

  • Kim, Yong-Hoon;Park, Sung-Kyu;Oh, Min-Suk;Kim, Kwang-Ho;Han, Jeong-In
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.1002-1004
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    • 2009
  • Solution-processed indium-gallium-zinc-oxide thin-film transistors were fabricated by sol-gel method. By a combinatorial study of InGaZnO multi-component system, optimum molar ratio of In, Ga, and Zn has been selected. By adjusting the In:Ga:Zn molar ratio, TFTs with field-effect mobility of 0.5 ~ 1.5 $cm^2$/V-s, threshold voltage of -5 ~ 5 V, and subthreshold slope of 1.5 ~ 2.5 V/decade were achieved.

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Sol-Gel법을 이용한 알루미나 기판과 동 피복층간의 접착력 특성 (Adhesion characteristics of copper layer fabricated by Sol-Gel process)

  • 김동규;이홍로
    • 한국표면공학회지
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    • 제29권3호
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    • pp.186-194
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    • 1996
  • In this study, ceramic film was coated by a sol-gel process for increasing the adhesion strength between the substrate and copper layer. TEOS and ATSB were used as starting solution of metallic alkoxide. As a result, amorphous-like diffraction pattern after heat treatment at $1200^{\circ}C$ was obtained using X-ray diffractometer. The more contants of $Al_2O_3$ gave rise to the futher advanced cracks. A maximum adhesion strength of 250gf was measured under the condition of 30 Wt.% $Al_2O_3$, which is 5 times greater than that of uncoated one of the ceramic film.

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CONDUCTIVE SnO$_2$ THIN FILM FABRICATION BY SOL-GEL METHOD

  • Lee, Seung-Chul;Lee, Jae-Ho;Kim, Young-Hwan
    • 한국표면공학회지
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    • 제32권3호
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    • pp.456-460
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    • 1999
  • Transparent conducting tin (IV) oxide thin films have been studies and developed for the electrode materials of solar cell substrate. Fabrication of tin oxide thin films by sol-gel method is process development of lower cost photovoltaic solar cell system. The research is focused on the establishment of process condition and development of precursor. The precursor solution was made of tin isopropoxide dissolved in isopropyl alcohol. The hydrolysis rate was controlled by addition of triethanolamine. Dip and spin coating technique were applied to coat tin oxide on borosilicate glass. The resistivity of the thin film was lower than 0.1Ω-cm and the transmittance is higher than 90% in a visible range.

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수용성 폴리머 겔 전헤액을 사용한 Pseudocapacitor의 전기화학적 특성 (Electrochemical Characteristics of Pseudocapacitor Using Aqueous Polymeric Gel Electrolyte)

  • 박수길
    • 전기화학회지
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    • 제6권2호
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    • pp.158-160
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    • 2003
  • We have reported to make nanostructured cobalt oxide electrode that have large capacitance over than 400 F/g (specific capacitance) and good cycleability. But, it had serious demerits of low voltage range under 0.5 V and low power density. Therefore, we need to increase voltage range of cobalt oxide electrode. We report here on the electrochemical properties of sol-gel-derived nanoparticulate cobalt xerogel in 1M KOH solution and aqueous polymeric gel electrolyte. In solution electrolyte, cobalt oxide electrode had over 250 F/g capacitance consisted of EDLC and pseudocapacitance. In gel electrolyte, cobalt oxide electrode had around 100 F/g capacitance. This capacitance was only electric double layer capacitance of active surface area. In solution electrolyte, potassium ion as working ion reacted with both of layers easily. However, In gel electrolyte, reacted with only surface-active layer. Itis very hard to reach resistive layer. So, we have studied on pretreatment of electrode to contain working ions easily. We'll report more details.