• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.100-100
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• 2000

Aluminium oxide (Al2O3) films have been investigated for many applications such as insulating materials, hard coatings, and diffusion barriers due to their attractive electrical and mechanical properties. In recent years, application of Al2O3 films for dielectric materials in integrated circuits as gates and capacitors has attracted much attention. Various deposition techniques such as sol-gel, metalorganic decomposition (MOD), sputtering, evaporation, metalorganic chemical vapor deposition (MOCVD), and pulsed laser ablation have been used to fabricate Al2O3 thin films. Among these techniques, reactive sputtering has been widely used due to its high deposition rate and easy control of film composition. It has been also reported that the sputtered Al2O3 films exhibit superior chemical stability and mechanical strength compared to the films fabricated by other processes. In this study, Al2O3 thin films were deposited on Pt/Ti/SiO/Si2 and Si substrates by DC reactive sputtering at room temperature with variation of the Ar/O2 ratio in sputtering ambient. Crystalline phase of the reactively sputtered films was characterized using X-ray diffractometry and the surface morphology of the films was observed with Scanning election microscopy. Effects of Th Ar/O2 ratio characteristics of Al2O3 films were investigated with emphasis on the thickness dependence of the dielectric properties. Correlation between the dielectric properties and the microstructure was also studied

• Journal of Industrial and Engineering Chemistry
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• v.67
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• pp.164-174
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• 2018

The purpose of this work designed hybrid-structured and plasma effect photocatalyst of $Ag/In_2O_3/TiO_2/HNTs$ via sol-gel and photo-reduction methods. The structures, morphologies, optical and photoelectric performances of as-prepared photocatalysts were characterized via XRD, TEM, XPS, BET, UV-vis DRS, PL and photocurrents. The photocatalytic activity was evaluated by degradation of TC. The results showed that the hybrid-structure and plasma effect can effectively cause the multi-transfer of electrons and increase the separation rate of electron and hole pairs which obtained high photocatalytic activity. The photocatalytic degradation processes reveal that $^{\bullet}O_2{^-}$ and $h^+$ are major active species.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.3
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• pp.1-6
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• 2017

Functional coatings, such as anti-reflection and self-cleaning, are frequently applied to cover glass for photovoltaic applications. Anti-reflection coatings made of mesoporous silica film have been shown to enhance the light transmittance. $TiO_2$ photocatalyst films are often applied as a self-cleaning coating. In this study, transparent hydrophobic anti-reflective and self-cleaning coatings made of $SiO_2/TiO_2$ thin layers were fabricated on a slide glass substrate by the sol-gel and dip-coating processes. The morphology of the functional coatings was characterized by field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). The optical properties of the functional coatings were investigated using an UV-visible spectrophotometer. Contact angle measurements were performed to confirm the hydrophobicity of the surface. The results showed that the $TiO_2$ films exhibit a high transmittance comparable to that of the bare slide glass substrate. The $TiO_2$ nanoparticles make the film more reflective and lead to a lower transmittance. However, the transmittance of the $SiO_2/TiO_2$ thin layers is 93.5% at 550 nm with a contact angle of $110^{\circ}$, which is higher than that of the bare slide glass (2.0%).

• Journal of the Korean Vacuum Society
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• v.15 no.5
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• pp.534-540
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• 2006

Thin films of $V_2O_3$, $VO_2$, and $V_2O_5$ were obtained from a single precursor solution through post-annealing processes under different annealing conditions. As annealed in air, the deposited films became $V_2O_5$ with orthorhombic crystal structure, while they were $V_2O_3$ and $VO_2$ with rhombohedral and monoclinic crystal structure as annealed in vacuums with base pressure of $1{\times}10^{-6}$ Torr and with 10 mTorr $O_2$ pressure, respectively. Electrical and optical measurements indicated that the $V_2O_5$ and $VO_2$ films are semiconducting, while the $V_2O_3$ films are metallic at room temperature. Chromium doping in $VO_2$ resulted in a decrease of the resistivity and changed the conduction type from n-type to p-type. 10% Cr-doped $VO_2$ films were found to have orthorhombic crystal structure, which is different from that of the undoped $VO_2$. Spectral features in the optical absorption spectra of all the films were interpreted as the transitions involving O 2p and V 3d bands. The crystal-field splittings between $t_{2g}$ and $e_g$ states of the V 3d bands are estimated to be about 1.5 and 1.0 eV for $V_2O_5$ and $VO_2$, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.254-254
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• 2016

Tin dioxide (SnO2) thin film is one of the most important n-type semiconducting materials having a high transparency and chemical stability. Due to their favorable properties, it has been widely used as a base materials in the transparent conducting substrates, gas sensors, and other various electronic applications. Up to now, SnO2 thin film has been extensively studied by a various deposition techniques such as RF magnetron sputtering, sol-gel process, a solution process, pulsed laser deposition (PLD), chemical vapor deposition (CVD), and atomic layer deposition (ALD) [1-6]. Among them, ALD or plasma-enhanced ALD (PEALD) has recently been focused in diverse applications due to its inherent capability for nanotechnologies. SnO2 thin films can be prepared by ALD or PEALD using halide precursors or using various metal-organic (MO) precursors. In the literature, there are many reports on the ALD and PEALD processes for depositing SnO2 thin films using MO precursors [7-8]. However, only ALD-SnO2 processes has been reported for halide precursors and PEALD-SnO2 process has not been reported yet. Herein, therefore, we report the first PEALD process of SnO2 thin films using SnCl4 and oxygen plasma. In this work, the growth kinetics of PEALD-SnO2 as well as their physical and chemical properties were systemically investigated. Moreover, some promising applications of this process will be shown at the end of presentation.

• Proceedings of the IEEK Conference
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• 2001.10a
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• pp.240-244
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• 2001

Recycling process involving mechanical, thermal, hydrometallurgical, and sol-gel step has been applied to recover cobalt and lithium from spent lithium ion batteries and to synthesize LiCoO$_2$from leach liquor as cathodic active materials. Electrode materials containing lithium and cobalt could be concentrated with 2-step thermal and mechanical treatment. Leaching behaviors of the lithium and cobalt in nitric acid media was investigated in terms of reaction variables. Hydrogen peroxide in 1 M HNO$_3$solution turned out to be an effective reducing agent by enhancing the leaching efficiency. O f many possible processes to produce LiCoO$_2$, the amorphous citrate precursor process (ACP) has been applied to synthesize powders with a large specific surface area and an exact stoichiometry. After leaching used LiCoO$_2$with nitric acid, the molar ratio of Li/Co in the leach liquor was adjusted at 1.1 by adding a fresh LiNO$_3$solution. Then, 1 M citric acid solution at a 100% stoichiometry was also added to prepare a gelatinous precursor. When the precursor was calcined at 95$0^{\circ}C$ for 24 hr, purely crystalline LiCoO$_2$was successfully obtained. The particle size and specific surface area of the resulting crystalline powders were 20 пm and 30 $\textrm{cm}^2$/g, respectively The LiCoO$_2$powder was proved to have good characteristics as cathode active materials in charge/discharge capacity and cyclic performance.

• Bulletin of the Korean Chemical Society
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• v.32 no.7
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• pp.2178-2182
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• 2011

Recently, the synthesis of ordered macroporous materials has received much attention due to its potential use as photonic band gap materials.$^1$ In this study, we have used the three-dimensional (3D) latex array template impregnated with benzenesulfonic acid (BSA), which is capable of catalyzing the reaction using tetraethyl orthosilicate (TEOS) as a precursor and distilled water. The polystyrene (PS) templates were reacted with TEOS in $scCO_2$ at 40 $^{\circ}C$ and at 80 bar. In the reactor, TEOS was filtrated into the PS particle lattice. After the reaction, porous silica materials were obtained by calcinations of the template. The stability test of the PS template in pure $CO_2$ was conducted before the main experiment. Scanning electron microscopy (SEM) images showed that the reaction in $scCO_2$ takes place only on the particle surface. This new method using $scCO_2$ has advantages over conventional sol-gel processes in its capability to control the fluid properties such as viscosity and interfacial tension. It has been found that the reaction in $scCO_2$ occurs only on the particle surface, making the proposed technique as more rapid and sustainable method of synthesizing inverse opal materials than conventional coating processes in the liquid phase and in the vapor phase.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2002.02a
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• pp.340-340
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• 2002

In an effort to develop alternative single buffer layer technology for YBa$_2$Cu$_3$O$_{7-{\delta}}$ (YBCO) coated conductors, we have investigated both LaMnO$_3$, (LMO) and La$_2$Zr$_2$O$_{7}$ (LZO) as potential buffer layers. High-quality LMO films were grown directly on textured Ni and Ni-W (3%) substrates using rf magnetron sputtering. Highly textured LZO buffers were grown on textured Ni substrates using sol-gel alkoxide processing route. YBCO films were then grown on both LMO and LZO buffers using pulsed laser deposition. Detailed X-ray studies have shown that YBCO films were grown on both LMO and LZO layers with a single epitaxial orientation. A high J$_{c}$ of over 1 MA/cm$^2$ at 77 K and self-field was obtained on YBCO films grown on both LMO-buffered Ni or Ni-W substrates, and also on LZO-buffered Ni substrates. We have identified LaMnO$_3$ as a good diffusion barrier layer for Ni and it also provides a good template for growing high current density YBCO films. Similarly we have also demonstrated the growth of high J$_{c}$ YBCO films on all solution buffers. We will discuss in detail about our buffer deposition processes. processes.s.s.s.s.

• Membrane Journal
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• v.20 no.1
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• pp.21-28
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• 2010

Organic/inorganic composite electrolyte membranes were prepared for dye sensitized solar cell (DSSC). Poly (ethylene glycol) (PEG)s with various molecular weight (600, 1,500, 2,000 and 3,400) were ethoxysilated to fabricate organic/inorganic composite materials through sol-gel processes. The electrolyte membranes were produced by doping the composite materials with KI and $I_2$, and their ionic conducting behaviors were investigated. The ionic conductivity of the composite membrane was highly affected by PEG molecular weight. The highest conductivity was shown by the composite membrane prepared with PEG with the molecular weight of 2,000. The composite electrolyte membranes showed considerable improvement of ionic conductivity. Compared to PEO electrolyte membranes, the composite electrolyte membrane by PEG, MW 2,000 showed much higher ionic conductivity.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.319-319
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• 2013

Even though the fabrication methods of metal oxide based thin film capacitor have been well established such as RF sputtering, Sol-gel, metal organic chemical vapor deposition (MOCVD), ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD), an applicable capacitor of printed circuit board (PCB) has not realized yet by these methods. Barium Strontium Titanate (BST) and other high-k ceramic oxides are important materials used in integrated passive devices, multi-chip modules (MCM), high-density interconnect, and chip-scale packaging. Thin film multi-layer technology is strongly demanded for having high capacitance (120 nF/$mm^2$). In this study, we suggest novel multi-layer thin film capacitor design and fabrication technology utilized by plasma assisted deposition and photolithography processes. Ba0.6Sr0.4TiO3 (BST) was used for the dielectric material since it has high dielectric constant and low dielectric loss. 5-layered BST and Pt thin films with multi-layer sandwich structures were formed on Pt/Ti/$SiO_2$/Si substrate by RF-magnetron sputtering and DC-sputtering. Pt electrodes and BST layers were patterned to reveal internal electrodes by photolithography. SiO2 passivation layer was deposited by plasma-enhanced chemical vapor deposition (PE-CVD). The passivation layer plays an important role to prevent short connection between the electrodes. It was patterned to create holes for the connection between internal electrodes and external electrodes by reactive-ion etching (RIE). External contact pads were formed by Pt electrodes. The microstructure and dielectric characteristics of the capacitors were investigated by scanning electron microscopy (SEM) and impedance analyzer, respectively. In conclusion, the 0402 sized thin film multi-layer capacitors have been demonstrated, which have capacitance of 10 nF. They are expected to be used for decoupling purpose and have been fabricated with high yield.