• 제목/요약/키워드: Sol-gel

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PbO가 Sol-Gel Process로 제조된 순수 PbTiO3 세라믹스의 소결에 미치는 영향 (The Effect of PbO on Sintering of Undoped PbTiO3 Ceramics Prepared by Sol-Gel Processing)

  • 김선욱;윤만순;김남흥
    • 한국세라믹학회지
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    • 제29권5호
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    • pp.335-340
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    • 1992
  • Undoped PbTiO3 ceramics was successfully prepared by using sol-gel process, which had not been fabricated due to its microcracks created by anisotropic stress during phase transition from cubic to tetragonal phase. Fabrication of undoped PbTiO3 ceramics via sol-gel processing was very much affected by the PbO content of the samples as well as PbO vapor from sintering atmosphere. Excess PbO was found to promote rapid grain growth in PbTiO3 ceramics. After sintering at 1100$^{\circ}C$ average grain size of PbTiO3 ceramics with excess PbO was about 8 times greater than that of stoichiometric composition, which may be due to PbO liquid phase from excess PbO.

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Influence of Pore on Dielectric Constant of Colrdierite Ceramics Prepared by Sol-Gel Process

  • Ryu, Su-Chak
    • The Korean Journal of Ceramics
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    • 제4권2호
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    • pp.99-102
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    • 1998
  • Cordierite ceramics with low dielectric constants were obtained through sol-gel techniques using as metal alkoxides. The powders for the sintered cordierite ceramics were prepared by hydrolysis of metal alkoxides with ethanol and distilled water. In the hydrolysis, the mole ratio of HCI/TEOS was controlled by changing the amount of HCI as a catalyst. The sol-gel derived powders were dried, pressed, and fired at $1300^{\circ}C$. The dried powders were calcined at $800{\circ}C$ for 3hours to remove residual organics. The fired bodies with different dielectric constants were obtained by using HCI adjusted to various mole ratios of HCI/TEOS in the process. The variation of the amount of HCI catalyst led to a significant influence on dielectric contant, which was attributed to the formation of pores in the sintered body. Especially, the porosity of the sintered body influenced the dielectric constants.

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Sol-Gel법에서 Pb의 농도가 PbZrO3 박막 결정에 미치는 영향 (The Effect of Pb Mol Ratio in PbZrO3 Thin Films made by Sol-Gel Method)

  • 배세환;진병문;김성대
    • 한국전기전자재료학회논문지
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    • 제21권6호
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    • pp.552-555
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    • 2008
  • The purpose of this study was to find a best condition of fabricating lead zirconate thin film by sol-gel method, especially to find mol ratio and post annealing temperature. Lead zirconate thin film was made by spin coating method. The ratios of Pb and Zr of precursors were 1:0.8, 1:1.0, and 1:1.2. Annealing temperature of films were $600^{\circ}C$, $700^{\circ}C$, and $800^{\circ}C$ for 1 minute. Crystal structure was observed from XRD and antiferroelectricity was observed from hysteresis curves. The optimum mol ratio of Pb:Zr is 1:0.8 and annealing temperature is $800^{\circ}C$.

VOC물질중 에탄올 광분해반응을 위한 $TiO_2$촉매의 제초변수 고찰 (The Study on Preparation Parameters of $TiO_2$Catalyst for Photodecomposition of Ethanol as a VOC)

  • 이병용;김성욱;정석진
    • 한국대기환경학회지
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    • 제17권4호
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    • pp.363-370
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    • 2001
  • In this study, TiO$_2$, the popular photocatalyst, was used to decompose ethanol. TiO$_2$was prepared by the sol -gel method and coated on pyrex stick. A 15W, UV-A lamp was used as the UV light source and il gas chromatography (HP 5890) was used to confirm the concentrations of ethanol, $CO_2$and the intermediates. Variation of preparation parameters and calcination temperature for TiO$_2$photocatalysts in the sol -gel method caused changes of ethanol decomposition activity. The best ethanol photodecomposition activity was obtained on the sample when prepared with 0.14 mol of HCI, a mol of ethanol and 1.3 mol of TTIP ware mixed in sol-gel process and calcinated at 50$0^{\circ}C$ for 3 hours. Acetaldehyde was detected as an intermediate and decomposed to carbon dioxide and water at the end of the reaction.

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Synthesis and Characterization of Tungsten Trioxide Films Prepared by a Sol-Gel Method for Electrochromic Applications

  • Kim, Tae-Ho;Nah, Yoon-Chae
    • 한국분말재료학회지
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    • 제22권5호
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    • pp.309-314
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    • 2015
  • Tungsten trioxide thin films are successfully synthesized by a sol-gel method using tungsten hexachloride as precursors. The structural, chemical, and optical properties of the prepared films are characterized by scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and UV-Vis spectrophotometry. The electrochemical and electrochromic properties of the films before and after heat treatment are also investigated by cyclic voltammetry, chronoamperometry, and in situ transmittance measurement system. Compared to as-prepared films, heat-treated tungsten trioxide thin films exhibit a higher electrochemical reversibility of 0.81 and superior coloration efficiency of $65.7cm^2/C$, which implies that heat treatment at an appropriate temperature is a crucial process in a sol-gel method for having a better electrochromic performance.

Dry Sol-Gel법에 의한 $TiO_2$ hybrid 박막의 광학특성 및 유전특성에 관한 연구 (Optical and dielectric Properties of $TiO_2$ hybrid thin films by dry sol-gel processing)

  • 정재훈;조종래;손세모;정수태
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.315-318
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    • 2001
  • The optical and dielectric properties of TiO$_2$ thin films prepared with mixtures of Epoxy, bits-(4, 4'-p-toluenesulfonylacidic isoproplylidene)-cyclohexadiol and UVI 6990 in dry sol-gel process were investigated. The absorption peak of the films was showed at 360nm. Photocurrent of the thin films doped with 50 wt% of TiO$_2$was higher than that of nondoped thin films. Energy gap was lowered from 3.6 to 3.3 eV with increasing amount of TiO$_2$. Relative dielectric constants of samples were 1.5 to 3 and showed a characteristics of lower dielectric materials.

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Preparation and Characterization of Small Sized PZT Powders: A Sol-Gel Modified Approach

  • Choi, Alka Yong-Woo;Kwon, Oh-H.;Choi, Kyu-M.
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.245-246
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    • 2006
  • A propyl alcohol based sol-gel method was used as to replace the 2-methoxyethanol with 1,1,1 tris (hydroxymethyl) ethane for preparation of pzt piezoelectric ceramic. The powder obtained by this sol-gel process were calcined at $900^{\circ}C$ and followed by the sintering at $1100^{\circ}C$ for ca2 hrs as to reach a pyrochlore-free crystal phase. The characterization of synthesized material was carried out by the XRD analysis and the surface morphology were determined by high resolution scanning electronmicroscopy. Further, the prepared small sized pzt thin powders are likely to be used m various applications.

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Silicon metal alkoxide 용액의 sol-gel 전이에서 중요인자 (Critical factors in sol-gel transition of silicon metal alkoxide solutions)

  • 김세훈;오근호
    • 한국결정성장학회지
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    • 제5권4호
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    • pp.332-342
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    • 1995
  • 실리콘 알콕사이드 용액의 졸-겔 전이에 있어서 반응조건에 중요한 영향을 미치는 인자에 대하여 Raman 분광분석을 기초로 해서 고찰해 보았다. 촉매의 종류, 용매, 건조제어용 화학첨가제 및 물의 양과 같은 여러 가지 인자가 졸-겔 과정에 있어 전이메카니즘에 영향을 주었다.

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Effect of annealing temperature on amorphous indium zinc oxide thin films prepared by a sol-gel spin-coating method

  • Lee, Sang-Hyun;Lee, Seung-Yup;Park, Byung-Ok
    • 한국결정성장학회지
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    • 제22권1호
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    • pp.15-18
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    • 2012
  • Transparent conductive indium zinc oxide thin films were prepared by spin-coating a sol-gel solution. Zinc acetate dihydrate [$Zn(CH_3COO)_2{\cdot}2H_2O$] and indium acetate [In$(CH_3COO)_3$] were used as starting precursors, and 2-methoxyethanol with 1-propanol as solvents. Upon annealing in a temperature range from 500 to $1000^{\circ}C$, the thin film crystallizes into polycrystalline $In_2O_3$(ZnO). The lowest electrical resistivity was obtained at an annealing temperature of $700^{\circ}C$ as $2{\Omega}{\cdot}cm$. Average optical transmittances were higher than 80% at all annealing temperatures. These experimental results confirm that the sol-gel spin-coating can be a good simplified practical method for forming transparent electrodes.

Sol-Gel법으로 제작한 X/65/35 (X=6~11) PLZT 박막의 전기 및 광학 특성 (Electrical and Optical Characteristics of X/65/35 (X=6~11) PLZT Thin Films Prepared by Sol-Gel Method)

  • 강종윤;장낙원;백동수;최형욱;박창엽
    • 한국전기전자재료학회논문지
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    • 제11권3호
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    • pp.237-241
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    • 1998
  • In this study, PLZT stock solutions around x/65/35 (x=6~11) ferroelectric region were prepared by Sol-Gel method and deposited on ITO-glass by spin-coating method. The thin films were annealed by RTA(rapid thermal annealing). The variations of crystallographic structure of the thin films were observed using XRD and hysteresis curves, dielectric characteristics, and optical transmittances were measured in order to investigate the characteristics of the thin films. The thin films were crystallized at $750^{\circ}C$ for 5 min by RTA. Relative dielectric constant and optical transmittance increased with increasing La content, Ec and Pr were higher for thin films than for bulk materials.

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